Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...最新文献
The electrical properties between 80 and 300 K and the optical absorption at room temperature of both n- and p-type CuInTe2 are studied. The n-type sample is obtained by annealing p-type CuInTe2 in the presence of indium for a prolonged period of time. The p-type samples are grown by programmed directional freezing technique with slight excess of indium in the stoichiometry. Two defect levels with ED = 58 meV and EA around 15 meV are identified from the analysis of the temperature dependence of the carrier concentration. The origin of these levels, consistent with the covalent bonding model, is attributed to InCu and VTe, respectively. From a theoretical fit to the experimental data, the density of states effective mass of the electrons is found to be m = 0.16me. The estimated values of the conduction and valence-band deformation potentials are in agreement with the general trend observed in other I–III–VI2 compounds. Using the model proposed for the band-gap shrinkage, the energy gap of n-type CuInTe2 in the dilute limit is calculated to be 1.026 eV. On a etudie les proprietes electriques entre 80 et 300 K, et l'absorption optique a temperature ambiante de CuInTe2 type n et type p. L'echantillon type n a ete obtenu par recuit et celuit type p par mise en presence de l'Indium durant une periode de temps prolonge. On a fait croǐtre les echantillons type p par la technique de refroidissement directionnel programme avec un leger exces d'Indium dans la stoechiometrie. Par l'analyse de la dependance de la temperature de concentration des porteurs, on a identifie deux niveaux de defauts avec ED = 58 meV et EA environ 15 meV. L'origine de ces niveaux, compatible avec le modele de liaison covalente, est attribue it a InCu et a VTe, respectivement. Apres un ajustement theorique aux donnees experimentales, la densite des etats de la masse effective des electrons est de m★ = 0,16me. Les valeurs estimees des potentiels de deformation des bandes de conduction et de valence sont en accord avec la tendance generale observee dans les composes I–III–VI2. En utilisant le modele propose pour la contraction de la bande du gap, le resultat de gap d'energie de CuInTe2 type n dans la limite diluee est de 1,026 eV.
研究了n型和p型CuInTe2在80 ~ 300 K范围内的电学性能和室温下的光吸收。将p型CuInTe2在铟存在下长时间退火得到n型样品。p型样品采用程序定向冷冻技术生长，化学计量中铟含量略超标。通过分析载流子浓度的温度依赖性，确定了ED = 58 meV和EA约为15 meV的两个缺陷能级。这些水平的起源，与共价键模型一致，分别归因于InCu和VTe。从理论拟合到实验数据，发现电子的态密度有效质量为m = 0.16me。传导电位和价带变形电位的估计值与其他I-III-VI2化合物中观察到的一般趋势一致。利用提出的带隙收缩模型，计算出n型CuInTe2在稀极限下的能隙为1.026 eV。在一个实验中，在80 ~ 300 K的温度范围内，有1种吸收光，温度环境为CuInTe2型和p型。1种吸收光，温度环境为CuInTe2型和p型。事实上，croǐtre les echantilons type p - parla technique de refrodisdisdisdirectnel programme在法律上超过了d'Indium dans和stohi计量学。第二部分分析了在一个确定的双系统默认条件下，温度和浓度的相关性，平均ED = 58 meV, EA环境为15 meV。原始的、兼容的、连接共价的、可分别归属于InCu和VTe的模型。根据实验条件下的调整理论，得到了质量有效电子的密度值= 0.16 μ m。莱斯的值估计的des potentiels de传导的变形des·邦德:不吸烟者价是在协议用拉照顾兴业银行observee在I-III-VI2作曲。在实用模型中，提出了一种压缩带隙的方法，使得闭合带隙的能量达到了CuInTe2型的极限稀释值为1026 eV。
{"title":"Electrical and Optical Properties of n- and p-Type CuInTe2","authors":"S. Wasim, J. G. Albornóz","doi":"10.1002/PSSA.2211100231","DOIUrl":"https://doi.org/10.1002/PSSA.2211100231","url":null,"abstract":"The electrical properties between 80 and 300 K and the optical absorption at room temperature of both n- and p-type CuInTe2 are studied. The n-type sample is obtained by annealing p-type CuInTe2 in the presence of indium for a prolonged period of time. The p-type samples are grown by programmed directional freezing technique with slight excess of indium in the stoichiometry. Two defect levels with ED = 58 meV and EA around 15 meV are identified from the analysis of the temperature dependence of the carrier concentration. The origin of these levels, consistent with the covalent bonding model, is attributed to InCu and VTe, respectively. From a theoretical fit to the experimental data, the density of states effective mass of the electrons is found to be m = 0.16me. The estimated values of the conduction and valence-band deformation potentials are in agreement with the general trend observed in other I–III–VI2 compounds. Using the model proposed for the band-gap shrinkage, the energy gap of n-type CuInTe2 in the dilute limit is calculated to be 1.026 eV. On a etudie les proprietes electriques entre 80 et 300 K, et l'absorption optique a temperature ambiante de CuInTe2 type n et type p. L'echantillon type n a ete obtenu par recuit et celuit type p par mise en presence de l'Indium durant une periode de temps prolonge. On a fait croǐtre les echantillons type p par la technique de refroidissement directionnel programme avec un leger exces d'Indium dans la stoechiometrie. Par l'analyse de la dependance de la temperature de concentration des porteurs, on a identifie deux niveaux de defauts avec ED = 58 meV et EA environ 15 meV. L'origine de ces niveaux, compatible avec le modele de liaison covalente, est attribue it a InCu et a VTe, respectivement. Apres un ajustement theorique aux donnees experimentales, la densite des etats de la masse effective des electrons est de m★ = 0,16me. Les valeurs estimees des potentiels de deformation des bandes de conduction et de valence sont en accord avec la tendance generale observee dans les composes I–III–VI2. En utilisant le modele propose pour la contraction de la bande du gap, le resultat de gap d'energie de CuInTe2 type n dans la limite diluee est de 1,026 eV.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74782181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nondestructive methods for the evaluation of film thicknesses in the stack of thin film electroluminescence devices are important tools in development, in degradation studies, and even in research concerning the basic processes in these devices. A simple model of the operation of these devices allows for a fitting procedure of the transferred charge/applied voltage characteristic, yielding the capacities of the semiconductor and dielectric films separately. Their thicknesses on the other hand can be assessed by Rutherford backscattering (RBS). With known values of the dielectric constants their comparison results in good agreement assuming a density of the vacuumdeposited films 5% less than the bulk values. Zerstorungsfreie Mesmethoden fur die Dicke der Filme in Dunnfilm-Elektrolumineszenz-Bauelementen sind sowohl fur die Kontrolle der Entwurfsziele, in Degradations-Untersuchungen als auch fur die Forschung zu Grundprozessen in solchen Strukturen wichtig. Ein einfaches Modell dieses Bauelements ermoglicht die Bestimmung der Kapazitaten der Halbleiter- und Isolatorfilme durch Anpassung der gemessenen Abhangigkeit der transferierten Ladung von der angelegten Spannung. Die Dicken der Einzel-Filme konnen andererseits aus Rutherford-Ruckstreumessungen (RBS) bestimmt werden. Der Vergleich liefert Werte fur die Dielektrizitatskonstanten, die von den bekannten Volumenwerten etwas abweichen, aber durch die plausible Annahme einer 5% geringeren Dichte der aufgedampften Filme in Ubereinstimmung gebracht werden konnen.
薄膜电致发光器件堆栈中薄膜厚度的无损评估方法是开发、降解研究甚至研究这些器件基本过程的重要工具。这些装置的简单操作模型允许对转移电荷/施加电压特性进行拟合，从而分别产生半导体和介电膜的容量。另一方面，它们的厚度可以通过卢瑟福后向散射(RBS)来评估。在已知介电常数的情况下，假设真空沉积膜的密度比体积值小5%，它们的比较结果很一致。[2] [1] [2] [2] [2] [3] [3] [3] [3] [3] [3] [3] [4] [4] [4] [4] [4] [3] [4] [4] [4]在此基础上，我们建立了一种新的模型，用于描述Bauelements(元素)的动态特性，并用于描述Kapazitaten和Halbleiter的动态特性。《狄更斯与卢瑟福的电影之旅》(the Die dickens der einzel - film konnen anderseits us Rutherford-Ruckstreumessungen, RBS)。德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语德语
{"title":"Measuring on Thin Film Electroluminescent Devices","authors":"G. O. Müller","doi":"10.1002/PSSA.2211390125","DOIUrl":"https://doi.org/10.1002/PSSA.2211390125","url":null,"abstract":"Nondestructive methods for the evaluation of film thicknesses in the stack of thin film electroluminescence devices are important tools in development, in degradation studies, and even in research concerning the basic processes in these devices. A simple model of the operation of these devices allows for a fitting procedure of the transferred charge/applied voltage characteristic, yielding the capacities of the semiconductor and dielectric films separately. Their thicknesses on the other hand can be assessed by Rutherford backscattering (RBS). With known values of the dielectric constants their comparison results in good agreement assuming a density of the vacuumdeposited films 5% less than the bulk values. \u0000 \u0000 \u0000 \u0000Zerstorungsfreie Mesmethoden fur die Dicke der Filme in Dunnfilm-Elektrolumineszenz-Bauelementen sind sowohl fur die Kontrolle der Entwurfsziele, in Degradations-Untersuchungen als auch fur die Forschung zu Grundprozessen in solchen Strukturen wichtig. Ein einfaches Modell dieses Bauelements ermoglicht die Bestimmung der Kapazitaten der Halbleiter- und Isolatorfilme durch Anpassung der gemessenen Abhangigkeit der transferierten Ladung von der angelegten Spannung. Die Dicken der Einzel-Filme konnen andererseits aus Rutherford-Ruckstreumessungen (RBS) bestimmt werden. Der Vergleich liefert Werte fur die Dielektrizitatskonstanten, die von den bekannten Volumenwerten etwas abweichen, aber durch die plausible Annahme einer 5% geringeren Dichte der aufgedampften Filme in Ubereinstimmung gebracht werden konnen.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86998963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The generalized mean spherical model approximation is used to obtain the total direct correlation function using a solution similar to that of Waisman-Lebowitz (WL) inside the core. Outside the core a sum of Coulomb and Yukawa potential is taken as a perturbation in the MSM approximation. The partial structure functions are computed by means of Pearson-Rushbrooke relations. Using these PSF's the radial distribution functions are calculated. All these partial structure functions have equal positive values at the long wave limit and the oscillations of the total direct correlation functions are found to cease with increasing k as expected. This new method is a generalization of previous MSM results in the sense that more general forms for the direct correlation function are considered. In both the cases, the coefficients of all terms can be independently adjusted. The partial structure functions and the radial distribution functions so computed gives better agreement than the mean spherical model approximation with experimental and also with molecular dynamics calculations. Es wird die verallgemeinerte „Mean-Spherical-Model-Approximation„ benutzt, um die direkte Gesamtkorrelationsfunktion zu erhalten, mittels einer Losung die der von Waisman-Lebowitz (WL) im Rumpfinneren ahnlich ist. Auserhalb des Rumpfes wird eine Summe des Coulomb- und Yukawa-Potentials als Storung der MSM-Naherung angenommen. Die Partial-Strukturfunktionen werden mittels Pearson-Rushbrooke-Beziehungen berechnet. Mit diesen PSF werden dann die radialen Verteilungsfunktionen berechnet. Alle Partial-Strukturfunktionen haben gleiche positive Werte im Grenzfall langer Wellen und es wird gefunden, das die Oszillationen der direkten Gesamtkorrelationsfunktionen, wie erwartet, mit wachsendem k geringer werden. Diese neue Methode ist eine Verallgemeinerung fruherer MSM-Ergebnisse in dem Sinne, das allgemeinere Formen fur die direkte Korrelationsfunktion betrachtet werden. In beiden Fallen lassen sich die Koeffizienten aller Terme unabhangig anpassen. Die so berechneten Partial-Strukturfunktionen und radialen Verteilungsfunktionen ergeben bessere Ubereinstimmung mit experimentellen und molekulardynamisch berechneten Werten als die „Mean-Spherical-Model-Approximation„.
采用广义平均球模型近似，在核内采用类似Waisman-Lebowitz (WL)的解求得总直接相关函数。在核外，库仑势和汤川势的总和作为MSM近似中的扰动。利用Pearson-Rushbrooke关系计算了部分结构函数。利用这些PSF计算径向分布函数。所有这些部分结构函数在长波极限处具有相等的正值，并且发现总直接相关函数的振荡如预期的那样随着k的增加而停止。这种新方法是对以前的MSM结果的推广，因为它考虑了直接相关函数的更一般形式。在这两种情况下，所有项的系数都可以独立调整。所计算的部分结构函数和径向分布函数与实验和分子动力学计算的平均球模型近似有更好的一致性。“平均-球-模型-近似”模型是一种广义上的数学模型，是一种基于gesamtkorrelationsfunction的数学模型，也是一种基于ww模型的数学模型。库仑势和汤川势在MSM-Naherung理论中的应用。部分结构功能的分析与分析。在此基础上，建立了一种新型的、可扩展的、可扩展的系统。部分构造函数(Alle partial - strukturfuntionen)是指构造函数(gliciche positive Werte in Grenzfall langer Wellen)和构造函数(wind gefunden)，即构造函数(die Oszillationen der direcreten gesamtkorrelationsfuntionen)，即构造函数(wachsendem k geringer werden)。《疾病新方法》第9期《疾病新方法》第9期《疾病新方法》第1期《疾病新方法》第2期《疾病新方法》第2期《疾病新方法》第2期《疾病新方法》第2期。在北京，堕落的人，像我这样的人，永远不会改变我的生活。在此基础上，提出了“偏结构函数”、“径向函数”、“超激励”、“实验-分子动力学”、“平均-球-模型-近似”等方法。
{"title":"Structure Factor Computation of RbCl and RbBr","authors":"R. Rao, R. Das","doi":"10.1002/PSSA.2211100205","DOIUrl":"https://doi.org/10.1002/PSSA.2211100205","url":null,"abstract":"The generalized mean spherical model approximation is used to obtain the total direct correlation function using a solution similar to that of Waisman-Lebowitz (WL) inside the core. Outside the core a sum of Coulomb and Yukawa potential is taken as a perturbation in the MSM approximation. The partial structure functions are computed by means of Pearson-Rushbrooke relations. Using these PSF's the radial distribution functions are calculated. All these partial structure functions have equal positive values at the long wave limit and the oscillations of the total direct correlation functions are found to cease with increasing k as expected. This new method is a generalization of previous MSM results in the sense that more general forms for the direct correlation function are considered. In both the cases, the coefficients of all terms can be independently adjusted. The partial structure functions and the radial distribution functions so computed gives better agreement than the mean spherical model approximation with experimental and also with molecular dynamics calculations. \u0000 \u0000 \u0000 \u0000Es wird die verallgemeinerte „Mean-Spherical-Model-Approximation„ benutzt, um die direkte Gesamtkorrelationsfunktion zu erhalten, mittels einer Losung die der von Waisman-Lebowitz (WL) im Rumpfinneren ahnlich ist. Auserhalb des Rumpfes wird eine Summe des Coulomb- und Yukawa-Potentials als Storung der MSM-Naherung angenommen. Die Partial-Strukturfunktionen werden mittels Pearson-Rushbrooke-Beziehungen berechnet. Mit diesen PSF werden dann die radialen Verteilungsfunktionen berechnet. Alle Partial-Strukturfunktionen haben gleiche positive Werte im Grenzfall langer Wellen und es wird gefunden, das die Oszillationen der direkten Gesamtkorrelationsfunktionen, wie erwartet, mit wachsendem k geringer werden. Diese neue Methode ist eine Verallgemeinerung fruherer MSM-Ergebnisse in dem Sinne, das allgemeinere Formen fur die direkte Korrelationsfunktion betrachtet werden. In beiden Fallen lassen sich die Koeffizienten aller Terme unabhangig anpassen. Die so berechneten Partial-Strukturfunktionen und radialen Verteilungsfunktionen ergeben bessere Ubereinstimmung mit experimentellen und molekulardynamisch berechneten Werten als die „Mean-Spherical-Model-Approximation„.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87052173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Mizeris, J. Grigas, V. Samulionis, V. Skritski, A. Baranov, L. A. Shuvalov
Results are given of the investigation of the temperature and frequency dependence of the complex dielectric permittivity and electrical conductivity of the CsDSO4 and CsDSeO4 single crystals in the frequency range 15 MHz to 52 GHz as well as velocity and attenuation of the longitudinal ultrasonic waves in the vicinity of a superionic phase transition temperature. Es werden die Ergebnisse der Untersuchung der Temperaturabhangigkeit und der Frequenzabhangigkeit der komplexen Dielektrizitatskonstante und der elektrischen Leitfahigkeit im Frequenzbereich von 15 MHz bis 52 GHz sowie auch der Temperaturabhangigkeit der Geschwindigkeit und der Absorption der longitudinalen Ultraschallwellen, in der Umgebung des superionischen Phasenubergangs von CsDSO4- und CsDSeO4-Einkristallen dargestellt.
saber是给予《of the temperature调查和frequency dependence of the钢渣dielectric permittivity and electrical conductivity《CsDSO4 and CsDSeO4单身crystals frequency路虎15兆赫to 52 GHz处理器as因为as《极速and attenuation longitudinal ultrasonic waves》the vicinity of a superionic过渡阶段temperature .会调查的成果Temperaturabhangigkeit和复杂Frequenzabhangigkeit Dielektrizitatskonstante和电动Leitfahigkeit调为15兆赫至52 GHz处理器,以及很Temperaturabhangigkeit速度和Absorption》longitudinalen Ultraschallwellen superionischen附近位于Phasenubergangs CsDSO4和CsDSeO4-Einkristallen学家.
{"title":"Microwave and Ultrasonic Investigations of Superionic Phase Transitions in CsDSO4 and CsDSeO4","authors":"R. Mizeris, J. Grigas, V. Samulionis, V. Skritski, A. Baranov, L. A. Shuvalov","doi":"10.1002/PSSA.2211100214","DOIUrl":"https://doi.org/10.1002/PSSA.2211100214","url":null,"abstract":"Results are given of the investigation of the temperature and frequency dependence of the complex dielectric permittivity and electrical conductivity of the CsDSO4 and CsDSeO4 single crystals in the frequency range 15 MHz to 52 GHz as well as velocity and attenuation of the longitudinal ultrasonic waves in the vicinity of a superionic phase transition temperature. \u0000 \u0000 \u0000 \u0000Es werden die Ergebnisse der Untersuchung der Temperaturabhangigkeit und der Frequenzabhangigkeit der komplexen Dielektrizitatskonstante und der elektrischen Leitfahigkeit im Frequenzbereich von 15 MHz bis 52 GHz sowie auch der Temperaturabhangigkeit der Geschwindigkeit und der Absorption der longitudinalen Ultraschallwellen, in der Umgebung des superionischen Phasenubergangs von CsDSO4- und CsDSeO4-Einkristallen dargestellt.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"2019 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73293455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Utilization of Ag:GeSe2 Films as Inorganic Positive Resist","authors":"R. Klabes, A. Thomas, G. Kluge","doi":"10.1002/PSSA.2211100247","DOIUrl":"https://doi.org/10.1002/PSSA.2211100247","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89157871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using the values of elastic constants the phase velocities and energy flux vectors associated with propagating elastic waves in XY, YZ, and XZ planes in LiCsSO4 single crystals are calculated. It is also pointed out, that for many directions in these planes the normals to the wavefronts of elastic waves are not collinear with the vectors representing either the energy flux or the particle displacement. An Hand bekannter Werte der elastischen Konstanten von LiCsSO4-Einkristallen werden die Phasengeschwindigkeiten und die Energieflusvektoren der elastischen Wellen in der XY, YZ- und XZ-Ebene bestimmt. Diese Energie begleitet die sich in diesen Ebenen fortpflanzenden elastischen Wellen. Es wird gezeigt, das die zur Wellenfront senkrechte Richtung sich haufig nicht mit der Ausbreitungsrichtung der elastischen Energie deckt, die durch den Vektor des Energieflusses dargestellt wird.
{"title":"Propagation of Plane Elastic Waves in LiCsSO4 Single Crystals","authors":"M. Czajkowski, M. Drozdowski, M. Kozielski","doi":"10.1002/PSSA.2211100215","DOIUrl":"https://doi.org/10.1002/PSSA.2211100215","url":null,"abstract":"Using the values of elastic constants the phase velocities and energy flux vectors associated with propagating elastic waves in XY, YZ, and XZ planes in LiCsSO4 single crystals are calculated. It is also pointed out, that for many directions in these planes the normals to the wavefronts of elastic waves are not collinear with the vectors representing either the energy flux or the particle displacement. \u0000 \u0000 \u0000 \u0000An Hand bekannter Werte der elastischen Konstanten von LiCsSO4-Einkristallen werden die Phasengeschwindigkeiten und die Energieflusvektoren der elastischen Wellen in der XY, YZ- und XZ-Ebene bestimmt. Diese Energie begleitet die sich in diesen Ebenen fortpflanzenden elastischen Wellen. Es wird gezeigt, das die zur Wellenfront senkrechte Richtung sich haufig nicht mit der Ausbreitungsrichtung der elastischen Energie deckt, die durch den Vektor des Energieflusses dargestellt wird.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"142 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78529625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the Normal-State Electrical Resistivity of YBa2Cu3O7 and Other Oxide Superconductors","authors":"C. Sunandana","doi":"10.1002/PSSA.2211100248","DOIUrl":"https://doi.org/10.1002/PSSA.2211100248","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"24 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91495858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silver sulfide specks formed on the (111) plane of AgBr are examined by high resolution electron microscopy and the relationships in atom arrangement at their interface are revealed on the basis of the lattice images observed for the silver sulfide specks as well as their orientation relative to the direction of AgBr crystal axis. Silver sulfide are in contact with AgBr (111) plane with one of the four different planes, (100), (102), (104), and (103). In every interfaces, the b-axis of the microcrystal of silver sulfide is parallel with the [112] axis of AgBr. The atom arrangements of both the crystals are, similar to each other at the interface and the lattice misfits between them are so small that the formation of the silver sulfide specks is considered to occur epitaxially on the AgBr (111) plane. Silbersulfidflecken auf (111)-Ebenen von AgBr werden mittels hochauflosender Elektronenmikroskopie untersucht und die Beziehungen der Atomanordnung an ihren Grenzflachen werden anhand der fur Silbersulfidflecken beobachteten Gitterdiagramme sowie deren Orientierung bezuglich der AgBr-Kristallachscnrichtungen gefunden. Silbersulfid befindet sich mit der AgBr (111)-Ebene und einer der vier verschiedenen Ebenen (100), (102), (104) und (103) in Kontakt. In jeder der Grenzflachen ist die b-Achse des Silbersulfid-Mikrokristalls parallel zur [112]-Achse von AgBr. Die Atomanordnungen beider Kristalle sind einander ahnlich an der Grenzflache und die Gitterfehlanpassung zwischen ihnen ist so gering, das angenommen wird, das die Bildung der Silbersulfidflecken epitaktisch auf der AgBr (111)-Ebene erfolgt.
利用高分辨率电子显微镜研究了在AgBr(111)平面上形成的硫化银斑点，并根据观察到的硫化银斑点的晶格图像及其相对于AgBr晶轴方向的取向揭示了其界面上原子排列的关系。硫化银与AgBr(111)面以(100)、(102)、(104)、(103)四种不同面中的一种接触。在各个界面中，硫化银微晶的b轴与AgBr的[112]轴平行。这两种晶体的原子排列在界面上彼此相似，它们之间的晶格不匹配非常小，以至于硫化银斑点的形成被认为是在AgBr(111)平面上外延发生的。Silbersulfidflecken auf (111)-Ebenen von AgBr werden mittels hochauflosender elektronenenmikroskopie untersuke和die Beziehungen der Atomanordnung和ihren Grenzflachen werden和hand der fur Silbersulfidflecken bebachteteen发光图sowie deren Orientierung bezuglich der AgBr- kristallachschnrichtungen gefunden。在Kontakt上研究了AgBr (111)-Ebene(111)和Ebenen(100)，(102)，(104)和(103)。In jder der Grenzflachen ist die b-Achse des silbersulfide - mikrokristall parallel zur [112]-Achse von AgBr。原子结构演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体演化为结晶体。
{"title":"High Resolution Electron Microscopic Study of Silver Sulfide Microcrystals Formed on Silver Bromide Emulsion Grains","authors":"T. Shiozawa, Takashi Kobayashi","doi":"10.1002/PSSA.2211100207","DOIUrl":"https://doi.org/10.1002/PSSA.2211100207","url":null,"abstract":"Silver sulfide specks formed on the (111) plane of AgBr are examined by high resolution electron microscopy and the relationships in atom arrangement at their interface are revealed on the basis of the lattice images observed for the silver sulfide specks as well as their orientation relative to the direction of AgBr crystal axis. Silver sulfide are in contact with AgBr (111) plane with one of the four different planes, (100), (102), (104), and (103). In every interfaces, the b-axis of the microcrystal of silver sulfide is parallel with the [112] axis of AgBr. The atom arrangements of both the crystals are, similar to each other at the interface and the lattice misfits between them are so small that the formation of the silver sulfide specks is considered to occur epitaxially on the AgBr (111) plane. \u0000 \u0000 \u0000 \u0000Silbersulfidflecken auf (111)-Ebenen von AgBr werden mittels hochauflosender Elektronenmikroskopie untersucht und die Beziehungen der Atomanordnung an ihren Grenzflachen werden anhand der fur Silbersulfidflecken beobachteten Gitterdiagramme sowie deren Orientierung bezuglich der AgBr-Kristallachscnrichtungen gefunden. Silbersulfid befindet sich mit der AgBr (111)-Ebene und einer der vier verschiedenen Ebenen (100), (102), (104) und (103) in Kontakt. In jeder der Grenzflachen ist die b-Achse des Silbersulfid-Mikrokristalls parallel zur [112]-Achse von AgBr. Die Atomanordnungen beider Kristalle sind einander ahnlich an der Grenzflache und die Gitterfehlanpassung zwischen ihnen ist so gering, das angenommen wird, das die Bildung der Silbersulfidflecken epitaktisch auf der AgBr (111)-Ebene erfolgt.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"95 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77716627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The nature of the short range ordered (SRO) state and the mechanism of evolution of the long range ordered (LRO) structure in the NiMo system are subjects of considerable controversy. Attempts are made to simulate the state of SRO and the transitional states between SRO and LRO at the atomistic level. The two descriptions of the SRO state, namely, the concentration wave model and the cluster model are discussed in the light of the results of the present simulation. Die Natur des nahgeordneten (SRO) Zustandes und der Mechanismus der Entwicklung von ferngeordneten (LRO) Strukturen im System NiMo sind derzeit Gegenstand einer Kontroverse. Es wird ein Versuch unternommen, auf atomistischer Ebene den Nahordnungszustand und die Ubergangszustande zu simulieren, die beim Ubergang von Nahordnung zur Fernordnung auftreten konnen. Elektronenbeugungsdiagramme werden berechnet und mit experimentellen Aufnahmen verglichen. Zwei Beschreibungen des nahgeordneten Zustandes, namlich das Konzentrationswellen-Modell und das Cluster-Modell, werden im Rahmen der Ergebnisse dieser Untersuchungen diskutiert.
{"title":"Computer Simulation of the Early Stages of Ordering in Ni-Mo Alloys","authors":"U. D. Kulkarni, S. Muralidhar, S. Banerjee","doi":"10.1002/PSSA.2211100204","DOIUrl":"https://doi.org/10.1002/PSSA.2211100204","url":null,"abstract":"The nature of the short range ordered (SRO) state and the mechanism of evolution of the long range ordered (LRO) structure in the NiMo system are subjects of considerable controversy. Attempts are made to simulate the state of SRO and the transitional states between SRO and LRO at the atomistic level. The two descriptions of the SRO state, namely, the concentration wave model and the cluster model are discussed in the light of the results of the present simulation. \u0000 \u0000 \u0000 \u0000Die Natur des nahgeordneten (SRO) Zustandes und der Mechanismus der Entwicklung von ferngeordneten (LRO) Strukturen im System NiMo sind derzeit Gegenstand einer Kontroverse. Es wird ein Versuch unternommen, auf atomistischer Ebene den Nahordnungszustand und die Ubergangszustande zu simulieren, die beim Ubergang von Nahordnung zur Fernordnung auftreten konnen. Elektronenbeugungsdiagramme werden berechnet und mit experimentellen Aufnahmen verglichen. Zwei Beschreibungen des nahgeordneten Zustandes, namlich das Konzentrationswellen-Modell und das Cluster-Modell, werden im Rahmen der Ergebnisse dieser Untersuchungen diskutiert.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75619681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Positron Trapping at Ag/Na3AlF6 Interface; Life-Time Measurements","authors":"R. Ewertowski, A. Baranowski, W. Świątkowski","doi":"10.1002/PSSA.2211100252","DOIUrl":"https://doi.org/10.1002/PSSA.2211100252","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"13 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78386822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：