Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...最新文献
{"title":"On the Formation of Swirl Defects in Silicon and Germanium","authors":"R. Tognato","doi":"10.1002/PSSA.2210980248","DOIUrl":"https://doi.org/10.1002/PSSA.2210980248","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"60 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91020738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. B. Ilyaev, B. Umarov, L. A. Shabanova, M. F. Dubovik
{"title":"Temperature Dependence of Electromechanical Properties of LGS Crystals","authors":"A. B. Ilyaev, B. Umarov, L. A. Shabanova, M. F. Dubovik","doi":"10.1002/PSSA.2210980243","DOIUrl":"https://doi.org/10.1002/PSSA.2210980243","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78042924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Eine analytische Approximation für die Ortsabhängigkeit des Potentials bei Schottky-Randschichten","authors":"H. Lemke","doi":"10.1002/PSSA.2210980259","DOIUrl":"https://doi.org/10.1002/PSSA.2210980259","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83166252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Alexandrova, A. Szekeres, W. Füssel, H. Flietner
Radio frequency (rf) O2-plasma treatments produce markedly annealing effects on wet oxidized Si/SiO2-interfaces being more pronounced at higher substrate temperatures (300°C). This effect may be understood by plasma generated hydrogen in the oxide layer. Sauerstoff-Hochfrequenzplasmabehandlungen erzeugen bei einem durch feuchte Oxidation hergestellten Si/SiO2-System ausgesprochene Ausheileffekte bei hoheren Substrat-Temperaturen (300°C). Diese Wirkung kann verstanden werden, wenn man eine Wasserstofffreisetzung im Oxid durch das Plasma annimmt.
{"title":"RF Plasma Annealing Effects at the Wet Oxidized Si/SiO2 Interface","authors":"S. Alexandrova, A. Szekeres, W. Füssel, H. Flietner","doi":"10.1002/PSSA.2210980239","DOIUrl":"https://doi.org/10.1002/PSSA.2210980239","url":null,"abstract":"Radio frequency (rf) O2-plasma treatments produce markedly annealing effects on wet oxidized Si/SiO2-interfaces being more pronounced at higher substrate temperatures (300°C). This effect may be understood by plasma generated hydrogen in the oxide layer. \u0000 \u0000 \u0000 \u0000Sauerstoff-Hochfrequenzplasmabehandlungen erzeugen bei einem durch feuchte Oxidation hergestellten Si/SiO2-System ausgesprochene Ausheileffekte bei hoheren Substrat-Temperaturen (300°C). Diese Wirkung kann verstanden werden, wenn man eine Wasserstofffreisetzung im Oxid durch das Plasma annimmt.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"331 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86782458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon nitride films are deposited by reactive rf sputtering from a silicon target. Measurements of the electrical conductivity of films are performed between LNT and 400 K. Charge transport characteristics are discussed in terms of thermally activated bandtail and hopping conduction mechanisms with regard to existing models. Defect densities in the midgap of amorphous, hydrogen-free nitride films are determined to be of the order of 1020 cm−3. Siliziumnitrid-Schichten werden durch reaktives HF-Aufstauben hergestellt. Die elektrische Leitfahigkeit der Schichten wird zwischen LNT und 400 K gemessen. Die Ergebnisse werden anhand existierender Modellvorstellungen als thermisch aktivierte Bandtail- bzw. Hopping-Mechanismen gedeutet. Defektdichten in intrinsischem Siliziumnitrid in der Grosenordnung von 1020 cm−3 konnten bestimmt werden.
亚兰冰溶后的硅树脂，已消毒至矽兰。都需要实施全球电力和谷物滴答法批次售货charactecs经由热力确定乐队外Defect densities《midgap of amorphous hydrogen-free nitride电影在determined to be of the订单1020 cm−3 .亚硝基炸药是用再活跃的hf翻转石制的。轮班之圆是在LNT与400k之间。初步结果利用现有模型进行热力学连接Defektdichten在intrinsischem Siliziumnitrid 1020 Grosenordnung》指定能够cm−3 .
{"title":"Hopping Conduction and Defect States in Reactively Sputtered Silicon Nitride Thin Films","authors":"L. Gier, A. Scharmann, D. Schalch","doi":"10.1002/PSSA.2210980234","DOIUrl":"https://doi.org/10.1002/PSSA.2210980234","url":null,"abstract":"Silicon nitride films are deposited by reactive rf sputtering from a silicon target. Measurements of the electrical conductivity of films are performed between LNT and 400 K. Charge transport characteristics are discussed in terms of thermally activated bandtail and hopping conduction mechanisms with regard to existing models. Defect densities in the midgap of amorphous, hydrogen-free nitride films are determined to be of the order of 1020 cm−3. \u0000 \u0000 \u0000 \u0000Siliziumnitrid-Schichten werden durch reaktives HF-Aufstauben hergestellt. Die elektrische Leitfahigkeit der Schichten wird zwischen LNT und 400 K gemessen. Die Ergebnisse werden anhand existierender Modellvorstellungen als thermisch aktivierte Bandtail- bzw. Hopping-Mechanismen gedeutet. Defektdichten in intrinsischem Siliziumnitrid in der Grosenordnung von 1020 cm−3 konnten bestimmt werden.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"134 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86325100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The diffusion equation of As in supersaturated concentration in Si is established following Cahn's theory based on a coherent phase transformation. The electrically active solubility is quantitatively described by a critical concentration for the spinodal decomposition in an Ising model, and the atomic mixing energy of the AsSi system is determined to ϵ = 0.15 eV. The calculated value of the dimension of the percipitates is compared with the experimental results. Die Diffusionsgleichung von As in Ubersattigungskonzentration wird fur Si entsprechend der Cahnschen Theorie auf der Grundlage eines koharenten Phasenubergangs aufgestellt. Die elektrisch aktive Loslichkeit wird quantitativ beschrieben durch eine kritische Konzentration fur spinodale Zersetzung in einem Ising-Modell, und die atomare Mischungsenergie des AsSi-Systems wird zu ϵ = 0,15 eV bestimmt. Die berechneten Werte fur die Abmessung der Prazipitate werden mit experimentellen Ergebnissen verglichen.
肚里注射着人权问题所带来的结果《a critical The electrically active solubility is quantitatively described concentration for The spinodal decomposition在Ising模型,and The atomic mixing energy of The小系统is determined toϵ= 0.15 eV .计算机为了接纳实验结果。根据卡恩理论，fe在扩散浓度中的扩散方程式是建立在共度层面传输的基础上的。电动积极Loslichkeit将会对他们的描述,通过批评集中为spinodale事在Ising-Modell,核Mischungsenergie AsSi-Systems被指定为ϵ= 0.15% eV .对实验结果的测量值与测量实验结果相比较。
{"title":"Similarity between Spinodal Decomposition and Clustering in Si Highly Doped with As","authors":"Lu Zhiheng","doi":"10.1002/PSSA.2210980218","DOIUrl":"https://doi.org/10.1002/PSSA.2210980218","url":null,"abstract":"The diffusion equation of As in supersaturated concentration in Si is established following Cahn's theory based on a coherent phase transformation. The electrically active solubility is quantitatively described by a critical concentration for the spinodal decomposition in an Ising model, and the atomic mixing energy of the AsSi system is determined to ϵ = 0.15 eV. The calculated value of the dimension of the percipitates is compared with the experimental results. \u0000 \u0000 \u0000 \u0000Die Diffusionsgleichung von As in Ubersattigungskonzentration wird fur Si entsprechend der Cahnschen Theorie auf der Grundlage eines koharenten Phasenubergangs aufgestellt. Die elektrisch aktive Loslichkeit wird quantitativ beschrieben durch eine kritische Konzentration fur spinodale Zersetzung in einem Ising-Modell, und die atomare Mischungsenergie des AsSi-Systems wird zu ϵ = 0,15 eV bestimmt. Die berechneten Werte fur die Abmessung der Prazipitate werden mit experimentellen Ergebnissen verglichen.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"97 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88677931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Stress Induced Optical Anisotropy in Magnetic Garnet Films","authors":"H. Hemme, H. Dötsch, H. Dammann","doi":"10.1002/PSSA.2210980245","DOIUrl":"https://doi.org/10.1002/PSSA.2210980245","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83032769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Optical Absorption Edge of Thin GeO2 Films Doped with Copper","authors":"B. Rai","doi":"10.1002/PSSA.2210980256","DOIUrl":"https://doi.org/10.1002/PSSA.2210980256","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73616894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Anomalous Photovoltaic Effect in CdTe Films Illuminated with Monochromatic Light","authors":"S. Sharma, R. Srivastava","doi":"10.1002/PSSA.2210980232","DOIUrl":"https://doi.org/10.1002/PSSA.2210980232","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73823298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Caselli, R. Cabanillas, R. Wainschenker, M. Cutella
{"title":"High Temperature Drift Mobilities in High Resistivity Silicon","authors":"E. Caselli, R. Cabanillas, R. Wainschenker, M. Cutella","doi":"10.1002/PSSA.2210980258","DOIUrl":"https://doi.org/10.1002/PSSA.2210980258","url":null,"abstract":"","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"76 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83884416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：