Ge-Sb-Te (GST) ternary materials are representative phase-change material (PCMs) known for their high speed, stability, and low power consumption. The 10-year data retention temperature can be improved by doping with Al, which raises the data retention capability. In this work, the thermal and kinetic descriptions of the Al-doped Ge-Sb-Te system are studied using the CALPHAD (CALculation of PHAse Diagram) and first-principles methods to study the effects of Al-doped Ge-Sb-Te phase change memory materials. First, the thermodynamic description of the Al-doped Ge-Sb-Te are determined. In this progress, the Al-Te binary system is reassessed based on the reported thermodynamic properties. For the ternary systems, seven Al-Ge-Sb alloys and five Al-Ge-Te alloys are employed to determine ternary phase equilibria, revealing no ternary compounds. The Al-Sb-Te ternary system is also assessed by integrating reported isothermal sections. Then, the MSD (mean square displacements) of Ge, Sb, and Te atoms in different systems and temperatures are calculated under the liquid and overcooled liquid state using the AIMD (Ab initio Molecular Dynamics) simulations, which are used to constructed a description of their atomic mobility. Finally, thermodynamic and kinetic description are used to quantitatively predict the amorphous stability, power consumption and amorphous forming ability of the Al-dopped Ge-Sb-Te phase-change materials. Research shows that Al can improve the above performance of the Ge2Sb2Te5 phase. These analyses enhance our understanding of relation between thermodynamic properties and materials performance, offering valuable insights for the design and optimization of Al-doped Ge-Sb-Te phase change memory materials.
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