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Magneto-Tunable Thermal Diode Based on Bulk Superconductor 基于体超导体的磁可调谐热二极管
IF 2.8 Pub Date : 2025-10-19 DOI: 10.1002/apxr.202500080
Poonam Rani, Masayuki Mashiko, Keisuke Hirata, Ken-ichi Uchida, Yoshikazu Mizuguchi

The thermal diode is a growing technology and is important for active thermal flow control. Since the theoretical designing of thermal diode in 2004, various kinds of solid-state thermal diodes have been theoretically and experimentally investigated. Here, thermal rectification in bulk-size superconductor–normal metal junctions is reported. High-purity (5N) wires of Pb and Al are soldered, and the thermal conductivity (κ) of the junctions is measured in two different directions of the heat flow, forward (κF) and reverse (κR) directions. Thermal rectification ratio (κF / κR) of 1.75 is obtained at T ∼ 5.2 K with H = 400 Oe. The merit of the Pb–Al junction is a large difference of κ in the order of several hundred W m−1 K−1 and magneto-tunability of the working temperature.

热二极管是一门新兴的技术,在热流主动控制方面具有重要意义。自2004年热二极管理论设计以来,对各种固态热二极管进行了理论和实验研究。本文报道了大尺寸超导体-正常金属结中的热整流。焊接高纯度(5N) Pb和Al导线,在正向(κ f)和反向(κ r)两个不同的热流方向上测量结的导热系数(κ)。热整流比(κF / κR)为1.75,温度为T ~ 5.2 K, H = 400 Oe。Pb-Al结的优点是κ值相差很大,约为几百W m−1 K−1,并且工作温度具有磁可调性。
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引用次数: 0
Steerable High-Resolution Ultrasound Focusing via Phase-Array-Activated Acoustic Meta-Lenses 基于相控阵激活声学元透镜的可操纵高分辨率超声聚焦
IF 2.8 Pub Date : 2025-10-13 DOI: 10.1002/apxr.202500147
Xin-Yu Cui, Xiu-Zheng Liu, Peng Wu, Jie Yang, Zu-Biao Zhang, Yu-Gui Peng, Shi-Chun Bao, Xue-Feng Zhu

High-precision dynamic manipulation of 3D acoustic fields is a challenge in acoustics, crucial for applications from high-resolution imaging to targeted therapy. Conventional phased arrays (PAs), while inherently dynamic, are constrained by the size and number of piezo-elements, which imposes a trade-off among imaging resolution, aperture size, and system complexity due to the Nyquist sampling theorem. Acoustic lenses, by contrast, can provide subwavelength resolution but are intrinsically static. To reconcile these problems, here, a proposal is made to employ a steerable-plane-wave-excited meta-lens (SPWL) to combine plane-wave steering and wavefront reshaping. In SPWL, an acoustic meta-lens performs the intricate wavefront engineering, while a sparse PA is employed for flexible plane-wave steering. The strategy circumvents the Nyquist sampling criterion, thereby mitigating severe spatial aliasing which is typically associated with sparse arrays and enabling a low-cost system to achieve subwavelength focus scanning across both near and far fields. Its versatility is further demonstrated for spatial scanning of structured acoustic beams, including dual-spot focusing and vortex. Uniting the high performance, tunability and reduced complexity, the proposed SPWL system paves a transformative route toward advanced ultrasonic devices for biomedical applications.

三维声场的高精度动态操作是声学领域的一个挑战,对于从高分辨率成像到靶向治疗的应用至关重要。传统的相控阵(PAs)虽然具有固有的动态性,但受到压电元件尺寸和数量的限制,由于奈奎斯特采样定理,这就要求在成像分辨率、孔径尺寸和系统复杂性之间进行权衡。相比之下,声学透镜可以提供亚波长分辨率,但本质上是静态的。为了解决这些问题,本文提出了采用可操纵平面波激发元透镜(SPWL)将平面波导向与波前整形相结合的方案。在SPWL中,声学元透镜完成了复杂的波前工程,而稀疏PA则用于灵活的平面波引导。该策略绕过了奈奎斯特采样准则,从而减轻了通常与稀疏阵列相关的严重空间混叠,并使低成本系统能够实现跨近场和远场的亚波长聚焦扫描。它的多功能性进一步证明了空间扫描结构声波束,包括双点聚焦和涡旋。结合高性能、可调性和降低复杂性,所提出的SPWL系统为生物医学应用的先进超声设备铺平了一条变革性的道路。
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引用次数: 0
Air-Resistant Titanium Oxide Capping for Graphene/Ferromagnet Heterostructures (Adv. Phys. Res. 10/2025) 石墨烯/铁磁体异质结构的抗空气氧化钛封盖(Adv. Phys)。研究》10/2025)
IF 2.8 Pub Date : 2025-10-09 DOI: 10.1002/apxr.70028
Carlo Alberto Brondin, Iulia Cojocariu, Antonio Caretta, Andrea Locatelli, Stefano Bonetti, Tevfik Onur Menteş, Matteo Jugovac

A Protective Barrier for Heterostructures

A transparent titania capping layer protects graphene/cobalt heterostructures from oxidation while preserving interfacial magnetism. These findings highlight the achievement of air-stable graphene/metal interfaces, opening opportunities for studying related systems and enabling durable, high-performance devices. For more details see Research Article e00066 by Carlo Alberto Brondin, Matteo Jugovac and co-workers.

异质结构的保护屏障透明的二氧化钛覆盖层保护石墨烯/钴异质结构免受氧化,同时保持界面磁性。这些发现突出了空气稳定石墨烯/金属界面的成就,为研究相关系统和实现耐用、高性能设备开辟了机会。欲了解更多详细信息,请参阅Carlo Alberto Brondin, Matteo Jugovac及其同事的研究文章e00066。
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引用次数: 0
Issue Information (Adv. Phys. Res. 10/2025) 发行信息(物理广告)研究》10/2025)
IF 2.8 Pub Date : 2025-10-09 DOI: 10.1002/apxr.70027
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引用次数: 0
Highly Efficient Inch-Sized Cs3Cu2I5: In Single Crystal for Radiation Dose Monitor and Nuclear Battery Applications 用于辐射剂量监测和核电池的高效英寸尺寸Cs3Cu2I5单晶
IF 2.8 Pub Date : 2025-10-06 DOI: 10.1002/apxr.202500110
Hongda Chen, Zhibin Xu, Xuemin Wen, Qiang Gao, Tao Bai, Rui Jia, Qian Wang, Yunyun Li, Chen Peng, Fan Yang, Zhiheng Xu, Xiaojing Song, Yuntao Wu

Scintillating crystals play a critical role in nuclear energy and radiation detection applications, such as nuclear batteries and radiation dose detectors. Both applications urgently require scintillation crystals with high radioluminescence efficiency. In this work, the Bridgman-grown 1-inch Cs3Cu2I5: In single crystals demonstrate the capability of realizing a high-output-power nuclear battery and ultrabroad dynamic range radiation dose monitoring. The 1-inch Cs3Cu2I5: In single crystal has a high photoluminescence quantum yield of 92%, and a high light yield of 32 000 photons MeV−1 under gamma-ray irradiation. The inch-sized Cs3Cu2I5: In-based nuclear battery can achieve a high output power of 1.45 µW, superior to that of most radioluminescent-type nuclear batteries based on commercial and emerging scintillators. The Cs3Cu2I5: In-based dosimeter can realize an exceptional dynamic response range of 7.2–46 300 mGy h−1 with a linear correlation coefficient R2 of 0.9999. This work proves the effectiveness of bulk Cs3Cu2I5: In single crystals, acting as the key component of scintillators toward nuclear battery and radiation dose monitor.

闪烁晶体在核能和辐射探测应用中起着至关重要的作用,如核电池和辐射剂量探测器。这两种应用都迫切需要具有高辐射发光效率的闪烁晶体。在这项工作中,bridgman生长的1英寸Cs3Cu2I5: In单晶展示了实现高输出功率核电池和超远动态范围辐射剂量监测的能力。1英寸Cs3Cu2I5: In单晶的光致发光量子产率高达92%,在伽马射线照射下的光致发光量子产率高达32000个光子MeV−1。尺寸为1英寸的基于Cs3Cu2I5: in的核电池可以实现1.45 μ W的高输出功率,优于大多数基于商用和新兴闪烁体的辐射发光型核电池。基于Cs3Cu2I5: in的剂量计动态响应范围为7.2 ~ 46 300 mGy h−1,线性相关系数R2为0.9999。本工作证明了块状单晶Cs3Cu2I5:作为核电池和辐射剂量监测闪烁体的关键部件的有效性。
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引用次数: 0
Two-Time Approach to Past–Future Quantum Dynamics: Formalism and Applications 过去-未来量子动力学的双时间方法:形式主义和应用
IF 2.8 Pub Date : 2025-09-22 DOI: 10.1002/apxr.202500099
Le Bin Ho

A two-time extension of the past–future quantum state formalism is introduced, where a quantum system is represented by a forward-evolving density matrix ρ(t) and a backward-evolving effect matrix σ(t′) defined at generally distinct times tt′. The separation Δt = t′ − t provides additional freedom for modeling time-symmetric quantum dynamics. Within this framework, two-time weak values are defined and their implications are investigated for the Berry phase in a spin system, the spontaneous decay, and dwell time in a model of a two-level atom coupled to an atomic ensemble. The Berry phase emerges as a tunable quantity in this approach, with its value controlled by Δt, extending beyond conventional adiabatic constraints. It is further showed that the decay dynamics are strongly modulated by Δt, enabling either suppression or enhancement of the effective decay rate. Additionally, a closed-form expression is derived for the dwell time under weak measurement. These findings highlight the conceptual utility of the two-time formalism for exploring time-resolved quantum processes and suggest potential relevance for future studies in areas such as quantum control, feedback, and coherence preservation in open systems.

引入了过去-未来量子态形式的两时间扩展,其中量子系统由前向发展的密度矩阵ρ(t)和后向发展的效应矩阵σ(t ‘)表示,定义在不同的时刻t≠t ’。分离Δt = t ' - t为建模时间对称量子动力学提供了额外的自由。在此框架内,定义了双时间弱值,并研究了它们对自旋系统中的Berry相、双能级原子耦合原子系综模型中的自发衰变和停留时间的影响。在这种方法中,贝里相作为一个可调的量出现,其值由Δt控制,超出了传统的绝热约束。进一步表明,衰减动力学受到Δt的强烈调制,从而抑制或提高了有效衰减率。此外,还推导了弱测量下的停留时间的封闭表达式。这些发现突出了双时间形式在探索时间分辨量子过程中的概念效用,并为未来在开放系统中的量子控制、反馈和相干性保存等领域的研究提供了潜在的相关性。
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引用次数: 0
Optoelectronic Mesoporous Titania Memristor with Light-Modulation by Laser Pointer 激光笔光调制的光电介孔二氧化钛忆阻器
IF 2.8 Pub Date : 2025-09-22 DOI: 10.1002/apxr.202500058
Dhanashri Vittahl Desai, Gillhwan Kim, Eunsu Jang, Hyun Ho Lee

Here, optoelectronic synaptic device based on thin film mesoporous titania (meso-TiO2) is demonstrated as sensing active layer under illumination of low power laser pointers (532 nm or 632 nm), which could modulate weight change of input signal under the light-illumination and electrical-bias sequentially. Moreover, through both photonic and electronic co-modulation of input signal on the aluminum/meso-TiO2/indium tin oxide (ITO) device array, multiple hand-writings of numerical letters of “3” and “5” by laser pointer could be identified, stored, and erased. The laser pointer drawn letter images were self-adaptively preprocessed and memorized as photosynaptic perception concept with the visual neuromorphic 28 × 28 array. Moreover, the photosynaptic devices were demonstrated to possess self-rectifying and three different meso-TiO2 device's formats of crossbar, cap, and lateral electrode structures along with the various metal materials for top and bottom electrodes. In addition, the current–voltage (I–V) characteristics with series of photonic potentiation by lase pointer could show excitatory postsynaptic current (EPSC) behavior as well. In addition, thermal protocol of erase for the laser induced memory was examined, which could reset the adaptively perceived and memorized image under laser illumination. Accordingly, the dual modulation of photo-synaptic meso-TiO2 array can open initial step for artificial visual platform for image acquisition and preprocessing.

在低功率激光笔(532 nm或632 nm)照射下,基于介孔二氧化钛(meso-TiO2)薄膜的光电突触器件作为传感有源层,在光照和电偏压下依次调制输入信号的权重变化。此外,通过在铝/介面tio2 /铟锡氧化物(ITO)器件阵列上对输入信号进行光子和电子共调制,可以实现激光笔手写的多个数字字母“3”和“5”的识别、存储和擦除。采用视觉神经形态28 × 28阵列对激光笔绘制的字母图像进行自适应预处理并作为光突触感知概念记忆。此外,光突触器件具有自整流和三种不同的介膜二氧化钛器件格式的横条、帽形和侧电极结构,以及不同的金属材料的顶部和底部电极。此外,在激光笔的一系列光子增强作用下,电流-电压(I-V)特性也表现出兴奋性突触后电流(EPSC)行为。此外,研究了激光诱导记忆的擦除热协议,该协议可以在激光照射下对自适应感知和记忆的图像进行重置。因此,光突触介观tio2阵列的双调制可以为图像采集和预处理的人工视觉平台打开第一步。
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引用次数: 0
Impact of the Contact Thickness on the Contact Resistance of Coplanar Bottom-Contact Organic Thin-Film Transistors 触点厚度对共面底触点有机薄膜晶体管接触电阻的影响
IF 2.8 Pub Date : 2025-09-15 DOI: 10.1002/apxr.202500096
Tobias Wollandt, Karla Cordero-Solano, Thomas Whittles, Hagen Klauk

The contact resistance of organic thin-film transistors (TFTs) fabricated in the inverted coplanar (bottom-gate, bottom-contact) device architecture has been predicted to depend on the thickness of the source and drain contacts. To investigate this dependence experimentally, organic TFTs with a contact thickness ranging from 6 to 50 nm are fabricated and their contact resistance is measured using the transmission line method (TLM). Gold is used as the contact metal, and the contacts are functionalized with a chemisorbed monolayer of pentafluorobenzenethiol (PFBT). As the semiconductor, the vacuum-deposited small-molecule material 2,9-diphenyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DPh-DNTT) is employed. A trend toward smaller contact resistances is observed when the contact thickness is increased from 6 to 25 nm, and the contact resistance appears to saturate at a value of ≈100 Ωcm once the contact thickness exceeds a value of ≈30 nm. For the most part, this is consistent with results from simulations presented in the literature.

采用倒共面(底栅、底触点)器件结构制造的有机薄膜晶体管(TFTs)的接触电阻取决于源极和漏极触点的厚度。为了研究这种依赖关系,我们制作了接触厚度为6 ~ 50 nm的有机tft,并使用传输线法(TLM)测量了其接触电阻。金被用作触点金属,触点被化学吸附的五氟苯硫醇(PFBT)单层功能化。采用真空沉积的小分子材料2,9-二苯基二萘[2,3-b:2 ',3 ' -f]噻吩[3,2-b]噻吩(DPh-DNTT)作为半导体。当接触厚度从6 nm增加到25 nm时,接触电阻有减小的趋势,当接触厚度超过≈30 nm时,接触电阻在≈100 Ωcm处趋于饱和。在很大程度上,这与文献中提出的模拟结果是一致的。
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引用次数: 0
Issue Information (Adv. Phys. Res. 9/2025) 发行信息(物理广告)研究》9/2025)
IF 2.8 Pub Date : 2025-09-13 DOI: 10.1002/apxr.70017
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引用次数: 0
Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review (Adv. Phys. Res. 9/2025) 超宽带隙半导体器件的热特性:综述(物理学报)。研究》9/2025)
IF 2.8 Pub Date : 2025-09-13 DOI: 10.1002/apxr.70016
Hassan Irshad Bhatti, Xiaohang Li

Thermal Characterization for UWBG Devices

Review number e2500039 by Hassan Irshad Bhatti and Xiaohang Li highlights state-of-the-art thermal characterization techniques for ultrawide bandgap (UWBG) semiconductor devices, including Ga2O2, AlN, and diamond. By critically evaluating optical and electrical methods–such as thermoreflectance imaging, micro-Raman thermometry, and micro-thin film thermocouples–the study guides effective thermal metrology selection to address self-heating and reliability in next-generation power and RF electronics.

UWBG器件的热表征Hassan Irshad Bhatti和Xiaohang Li的评论号e2500039强调了超宽带隙(UWBG)半导体器件的最先进的热表征技术,包括Ga2O2, AlN和金刚石。通过严格评估光学和电学方法,如热反射成像,微拉曼测温和微薄膜热电偶,该研究指导有效的热计量选择,以解决自加热和可靠性在下一代电力和射频电子。
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引用次数: 0
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Advanced Physics Research
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