Hung-Cheng Wu, Takuya Aoyama, Daisuke Morikawa, Daisuke Okuyama, Kazuhiro Nawa, Wei-Tin Chen, Chan-Hung Lu, Tsung-Wen Yen, Shin-Ming Huang, Stuart Calder, Shuki Torii, Kenya Ohgushi, Masami Terauchi, Taku J. Sato
A polymorph of Cu2OSeO3 with the distorted kagome lattice is successfully obtained using the high-pressure synthesis technique (Cu2OSeO3-HP). The structural analysis using X-ray and neutron powder diffraction suggests that the tetrahedral Cu2+ clusters [similar to those in Cu2OSeO3 ambient-pressure phase (Cu2OSeO3-AP)] exist in Cu2OSeO3-HP but with three symmetry inequivalent sites. No structural change is observed between 1.5 K and the room temperature. The complex magnetic H-T phase diagram is established based on the temperature- and field-dependent magnetization data, indicating two distinct antiferromagnetic phases at low and intermediate temperatures, in addition to the higher-temperature spin-glass-like phase. The low temperature phase is identified by neutron powder diffraction refinements as a canted noncollinear antiferromagnetic order with a weak ferromagnetic component along the b-axis. Size of the refined ordered moment is ≈1.00(4) µB in Cu2OSeO3-HP, indicating a large enhancement compared to that of Cu2OSeO3-AP (≈0.61 µB). By applying a uniaxial stress, finite enhancement of weak ferromagnetic component in the noncollinear antiferromagnetic phase in Cu2OSeO3-HP is observed, which is the clear evidence of the piezomagnetic effect. Interestingly, the sign of the induced magnetization changes on heating from the low-temperature to the intermediate-temperature phases, indicating a novel piezomagnetic switching effect in this compound.
利用高压合成技术成功获得了一种具有扭曲鹿目晶格的多晶体 Cu2OSeO3(Cu2OSeO3-HP)。利用 X 射线和中子粉末衍射进行的结构分析表明,Cu2OSeO3-HP 中存在四面体 Cu2+ 簇(与 Cu2OSeO3 常压相(Cu2OSeO3-AP)中的四面体 Cu2+ 簇类似),但具有三个对称性不等的位点。在 1.5 K 和室温之间没有观察到结构变化。根据随温度和磁场变化的磁化数据,建立了复杂的磁性 H-T 相图,表明除了高温自旋玻璃相之外,在低温和中温还有两个不同的反铁磁相。通过中子粉末衍射细化,低温相被确定为沿 b 轴具有弱铁磁成分的倾斜非共轭反铁磁有序相。在 Cu2OSeO3-HP 中,细化有序矩的大小≈1.00(4) µB,与 Cu2OSeO3-AP 中的有序矩(≈0.61 µB)相比有了很大的提高。通过施加单轴应力,在 Cu2OSeO3-HP 的非共轭反铁磁相中观察到弱铁磁成分的有限增强,这是压磁效应的明显证据。有趣的是,在从低温相加热到中温相的过程中,诱导磁化的符号会发生变化,这表明该化合物中存在一种新的压磁切换效应。
{"title":"Observation of Thermally Induced Piezomagnetic Switching in Cu2OSeO3 Polymorph Synthesized under High-Pressure","authors":"Hung-Cheng Wu, Takuya Aoyama, Daisuke Morikawa, Daisuke Okuyama, Kazuhiro Nawa, Wei-Tin Chen, Chan-Hung Lu, Tsung-Wen Yen, Shin-Ming Huang, Stuart Calder, Shuki Torii, Kenya Ohgushi, Masami Terauchi, Taku J. Sato","doi":"10.1002/apxr.202400054","DOIUrl":"https://doi.org/10.1002/apxr.202400054","url":null,"abstract":"<p>A polymorph of Cu<sub>2</sub>OSeO<sub>3</sub> with the distorted kagome lattice is successfully obtained using the high-pressure synthesis technique (Cu<sub>2</sub>OSeO<sub>3</sub>-HP). The structural analysis using X-ray and neutron powder diffraction suggests that the tetrahedral Cu<sup>2+</sup> clusters [similar to those in Cu<sub>2</sub>OSeO<sub>3</sub> ambient-pressure phase (Cu<sub>2</sub>OSeO<sub>3</sub>-AP)] exist in Cu<sub>2</sub>OSeO<sub>3</sub>-HP but with three symmetry inequivalent sites. No structural change is observed between 1.5 K and the room temperature. The complex magnetic H-<i>T</i> phase diagram is established based on the temperature- and field-dependent magnetization data, indicating two distinct antiferromagnetic phases at low and intermediate temperatures, in addition to the higher-temperature spin-glass-like phase. The low temperature phase is identified by neutron powder diffraction refinements as a canted noncollinear antiferromagnetic order with a weak ferromagnetic component along the <i>b</i>-axis. Size of the refined ordered moment is ≈1.00(4) µ<sub>B</sub> in Cu<sub>2</sub>OSeO<sub>3</sub>-HP, indicating a large enhancement compared to that of Cu<sub>2</sub>OSeO<sub>3</sub>-AP (≈0.61 µ<sub>B</sub>). By applying a uniaxial stress, finite enhancement of weak ferromagnetic component in the noncollinear antiferromagnetic phase in Cu<sub>2</sub>OSeO<sub>3</sub>-HP is observed, which is the clear evidence of the piezomagnetic effect. Interestingly, the sign of the induced magnetization changes on heating from the low-temperature to the intermediate-temperature phases, indicating a novel piezomagnetic switching effect in this compound.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400054","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Terahertz (THz) technology has attracted significant attention because of its unique applications in biological/chemical sensing, medical imaging, non-invasive detection, and high-speed communication. Metasurfaces provide a dynamic platform for THz sensing applications, showcasing greater flexibility in design and the ability to optimize light-matter interactions for specific target enhancements, which includes enhancing the intramolecular and intermolecular vibration modes of the target biological/chemical molecules, setting them apart from conventional approaches. This review focuses on recent THz metasurface sensing methods, including metasurfaces based on toroidal dipole and quasi-bound states in the continuum to improve sensing sensitivity, nanomaterial-assisted metasurfaces for specific recognition, and metasurfaces combined with microfluidic with reduce water absorption loss. Furthermore, the applications of THz metasurface sensing is reviewed, including detecting the concentration of biomolecules, cells, tissues, and microbes, THz biomolecular fingerprint absorption spectra recognition, and identifying chiral compounds using chiral and achiral metasurfaces. Finally, the prospects for the next generation of THz sensors are examined.
{"title":"Advances in Metasurface-Based Terahertz Sensing","authors":"Jing Zhao, Lei Zhang, Huawei Liang","doi":"10.1002/apxr.202400077","DOIUrl":"https://doi.org/10.1002/apxr.202400077","url":null,"abstract":"<p>Terahertz (THz) technology has attracted significant attention because of its unique applications in biological/chemical sensing, medical imaging, non-invasive detection, and high-speed communication. Metasurfaces provide a dynamic platform for THz sensing applications, showcasing greater flexibility in design and the ability to optimize light-matter interactions for specific target enhancements, which includes enhancing the intramolecular and intermolecular vibration modes of the target biological/chemical molecules, setting them apart from conventional approaches. This review focuses on recent THz metasurface sensing methods, including metasurfaces based on toroidal dipole and quasi-bound states in the continuum to improve sensing sensitivity, nanomaterial-assisted metasurfaces for specific recognition, and metasurfaces combined with microfluidic with reduce water absorption loss. Furthermore, the applications of THz metasurface sensing is reviewed, including detecting the concentration of biomolecules, cells, tissues, and microbes, THz biomolecular fingerprint absorption spectra recognition, and identifying chiral compounds using chiral and achiral metasurfaces. Finally, the prospects for the next generation of THz sensors are examined.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400077","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142860047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mid-infrared (Mid-IR) integrated optics has tremendous applications in spectroscopic sensing, imaging, and ranging. Compared with visible light and near-IR wavelengths, the study of mid-IR photonic integrated devices is limited due to the need for more suitable materials and designs for constructing high-performance on-chip optoelectronic devices. Integrating emerging 2D materials with novel waveguide devices opens an avenue to boost the development of high-performance optoelectronic waveguide devices operating in the mid-IR wavelength range. This review summarizes the previous progress, current status, and future trends in exploring mid-IR optoelectronic waveguide devices with 2D materials. Specifically, the authors focus on the research efforts of developing passive photonic devices, modulators, photodetectors, and light sources. Then, the challenges and prospects in this area are discussed. The paper provides a valuable reference for researchers in infrared physics, optoelectronics, integrated optics, material science, sensing, and spectroscopy.
{"title":"Mid-Infrared Optoelectronic Waveguide Devices with 2D Materials","authors":"Liqiang Qi, Tianping Xu, Zhengkun Xing, Si Chen, Zunyue Zhang, Tiegen Liu, Zhenzhou Cheng","doi":"10.1002/apxr.202400079","DOIUrl":"10.1002/apxr.202400079","url":null,"abstract":"<p>Mid-infrared (Mid-IR) integrated optics has tremendous applications in spectroscopic sensing, imaging, and ranging. Compared with visible light and near-IR wavelengths, the study of mid-IR photonic integrated devices is limited due to the need for more suitable materials and designs for constructing high-performance on-chip optoelectronic devices. Integrating emerging 2D materials with novel waveguide devices opens an avenue to boost the development of high-performance optoelectronic waveguide devices operating in the mid-IR wavelength range. This review summarizes the previous progress, current status, and future trends in exploring mid-IR optoelectronic waveguide devices with 2D materials. Specifically, the authors focus on the research efforts of developing passive photonic devices, modulators, photodetectors, and light sources. Then, the challenges and prospects in this area are discussed. The paper provides a valuable reference for researchers in infrared physics, optoelectronics, integrated optics, material science, sensing, and spectroscopy.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400079","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141810984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jing Yi Tee, Mark John, Wei Fu, Thathsara D. Maddumapatabandi, Fabio Bussolotti, Calvin Pei Yu Wong, Kuan Eng Johnson Goh
The diverse morphologies of 2D transition metal dichalcogenides (2D TMDs) motivate their broad potential applications in the next generation of electronic, optical, and catalytic technologies. It is advantageous to develop controllable growth techniques that afford versatility through direct manipulation of the growth parameters. A fundamental understanding of the physical mechanisms driving various growth modes is crucial for achieving the process precision necessary for obtaining reproducible morphologies in 2D TMDs. Thermodynamic and kinetic considerations are two key physical strategies. Thermodynamic strategies mainly involve the manipulation of parameters like temperature and the chemical potential of precursors to ensure the thermostability of various morphologies. Conversely, kinetic strategies, focusing on the factors, like precursor diffusion, adsorption, and desorption during the growth, also enable atomic-level kinetics control of the resulting morphologies. Often, an interplay of both mechanisms drives the growth of a particular morphology. This review aims to provide an updated guidance for exploiting these physical strategies in the versatile technique of chemical vapor deposition. The opportunities for further exploring the control of these physical mechanisms are discussed through recent examples with an eye on unlocking the untapped potential of 2D TMDs in areas such as phase engineering and shape control for advanced applications.
{"title":"Physical Strategies for Geometric Control of Transition Metal Dichalcogenide Atomic Layers by Chemical Vapor Deposition","authors":"Jing Yi Tee, Mark John, Wei Fu, Thathsara D. Maddumapatabandi, Fabio Bussolotti, Calvin Pei Yu Wong, Kuan Eng Johnson Goh","doi":"10.1002/apxr.202300146","DOIUrl":"10.1002/apxr.202300146","url":null,"abstract":"<p>The diverse morphologies of 2D transition metal dichalcogenides (2D TMDs) motivate their broad potential applications in the next generation of electronic, optical, and catalytic technologies. It is advantageous to develop controllable growth techniques that afford versatility through direct manipulation of the growth parameters. A fundamental understanding of the physical mechanisms driving various growth modes is crucial for achieving the process precision necessary for obtaining reproducible morphologies in 2D TMDs. Thermodynamic and kinetic considerations are two key physical strategies. Thermodynamic strategies mainly involve the manipulation of parameters like temperature and the chemical potential of precursors to ensure the thermostability of various morphologies. Conversely, kinetic strategies, focusing on the factors, like precursor diffusion, adsorption, and desorption during the growth, also enable atomic-level kinetics control of the resulting morphologies. Often, an interplay of both mechanisms drives the growth of a particular morphology. This review aims to provide an updated guidance for exploiting these physical strategies in the versatile technique of chemical vapor deposition. The opportunities for further exploring the control of these physical mechanisms are discussed through recent examples with an eye on unlocking the untapped potential of 2D TMDs in areas such as phase engineering and shape control for advanced applications.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202300146","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141645909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The front cover illustrates the light-excited nonlinearity in defective lattices, that is, topologically defective lattice potential (TDLP) can facilitate domain clustering dynamics. In article number 2400035, Zhiqiang Liao, Munetoshi Seki, and co-workers explain how they constructed an Ising machine by using TDLP with strong damping capability. The proposed system exhibits robust and excellent performance in large-scale combinatorial optimization, even in environments where noise intensity exceeds its saturated fixed-point amplitude.