Geometrically perfect S = ½ kagome lattices with frustrated magnetism are typically electrical insulators. Electron or hole doping is predicted to induce an exotic conducting state including superconductivity. Herein, an unconventional strategy of doping an S = ½ kagome lattice CoCu3(OH)6Cl2 is adopted – a structural analogue of a well-known quantum spin liquid (QSL) candidate herbertsmithite (ZnCu3(OH)6Cl2) – by integrating it with reduced graphene oxide (rGO) via in situ redox chemistry. Such an integration drastically enhances the electrical conductivity, resulting in the transformation of an insulator to a semiconductor, corroborating the respective density of states obtained from the density functional theory calculations. Estimation of the magnetic moments, data on the Hall-effect measurements, Bader charge analysis, and photoemission signals, altogether provide a bold signature of remote hole doping in CoCu3(OH)6Cl2 by rGO. The remote doping provides an alternative to the site doping approach to impart exotic electronic properties in spin liquid candidates, specifically, the generation of topological states like Dirac metal is envisioned.
几何上完美的 S = ½ kagome 晶格具有受挫磁性,是典型的电绝缘体。根据预测,电子或空穴掺杂会诱发包括超导在内的奇异导电状态。在这里,我们采用了一种非常规的策略,通过原位氧化还原化学将 S = ½ kagome 晶格 CoCu3(OH)6Cl2 与还原型氧化石墨烯(rGO)整合在一起,从而掺杂了众所周知的量子自旋液体(QSL)候选物质 herbertsmithite (ZnCu3(OH)6Cl2)。这种整合极大地增强了导电性,实现了绝缘体到半导体的转变,证实了密度泛函理论计算所得到的各自的态密度。对磁矩的估算、霍尔效应测量数据、巴德电荷分析以及光发射信号,共同为 rGO 在 CoCu3(OH)6Cl2 中的远程空穴掺杂提供了一个大胆的特征。远程掺杂为在自旋液体候选物质中赋予奇异的电子特性提供了一种替代位点掺杂的方法,特别是设想产生像狄拉克金属那样的拓扑态。
{"title":"Unconventional Hole Doping of S = ½ Kagome Antiferromagnet CoCu3(OH)6Cl2","authors":"Rimpa Mandal, Pranay Ninawe, K. S. Ananthram, Akash Mhase, Kriti Gupta, Sauvik Saha, Ajay Ugale, Kirandeep Singh, Kartick Tarafder, Nirmalya Ballav","doi":"10.1002/apxr.202400037","DOIUrl":"10.1002/apxr.202400037","url":null,"abstract":"<p>Geometrically perfect S = ½ kagome lattices with frustrated magnetism are typically electrical insulators. Electron or hole doping is predicted to induce an exotic conducting state including superconductivity. Herein, an unconventional strategy of doping an S = ½ kagome lattice CoCu<sub>3</sub>(OH)<sub>6</sub>Cl<sub>2</sub> is adopted – a structural analogue of a well-known quantum spin liquid (QSL) candidate herbertsmithite (ZnCu<sub>3</sub>(OH)<sub>6</sub>Cl<sub>2</sub>) – by integrating it with reduced graphene oxide (rGO) via in situ redox chemistry. Such an integration drastically enhances the electrical conductivity, resulting in the transformation of an insulator to a semiconductor, corroborating the respective density of states obtained from the density functional theory calculations. Estimation of the magnetic moments, data on the Hall-effect measurements, Bader charge analysis, and photoemission signals, altogether provide a bold signature of remote hole doping in CoCu<sub>3</sub>(OH)<sub>6</sub>Cl<sub>2</sub> by rGO. The remote doping provides an alternative to the site doping approach to impart exotic electronic properties in spin liquid candidates, specifically, the generation of topological states like Dirac metal is envisioned.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400037","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141350131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Pelayo Garcia, D. Gibson, K. L. McAughey, D.A. Hughes, C. García Núñez
Oblique angle deposition (OAD) of inclined thin films is mainly performed using electron beam evaporation due to its accurate point source control over the incoming evaporated flux angle α, leading to thin films with a nanocolumnar inclination angle β. However, the utilization of magnetron sputtering (MS) with an extended source for OAD is not extensively studied and reported. This work presents a thorough analysis of ZnO inclined thin films deposited by a novel restricted DC-reactive MS-OAD technique. OAD-inclined films are deposited at α ranged 60°-88°, where incoming flux is restricted using a patented masking configuration enabling tunable control of deposited nanocolumn angular range. The described technique provides accurate control over the resulting β (99.5% reproducibility), allowing demonstrated βmax of 47.3°, close to theoretical limits predicted for ZnO. The approach discussed here probes enhanced control of β comparable to that observed in evaporation, however using an extended source, resulting in high-quality reproducible nanocolumnar-inclined films. The mentioned improvements result from the exploration of operational parameters such as magnetron power, working pressure, and chamber temperature, as well as the design of the restricting configuration and substrate holders and their influence on the resulting inclined thin film crystallinity, and morphology.
{"title":"Ultra-Inclined Nanocolumnar ZnO Films Sputtered Using a Novel Masking Configuration Providing Controlled and Restricted Oblique Angle Deposition for Enhanced Sensing Platforms","authors":"M. Pelayo Garcia, D. Gibson, K. L. McAughey, D.A. Hughes, C. García Núñez","doi":"10.1002/apxr.202400020","DOIUrl":"10.1002/apxr.202400020","url":null,"abstract":"<p>Oblique angle deposition (OAD) of inclined thin films is mainly performed using electron beam evaporation due to its accurate point source control over the incoming evaporated flux angle α, leading to thin films with a nanocolumnar inclination angle β. However, the utilization of magnetron sputtering (MS) with an extended source for OAD is not extensively studied and reported. This work presents a thorough analysis of ZnO inclined thin films deposited by a novel restricted DC-reactive MS-OAD technique. OAD-inclined films are deposited at α ranged 60°-88°, where incoming flux is restricted using a patented masking configuration enabling tunable control of deposited nanocolumn angular range. The described technique provides accurate control over the resulting β (99.5% reproducibility), allowing demonstrated β<sub>max</sub> of 47.3°, close to theoretical limits predicted for ZnO. The approach discussed here probes enhanced control of β comparable to that observed in evaporation, however using an extended source, resulting in high-quality reproducible nanocolumnar-inclined films. The mentioned improvements result from the exploration of operational parameters such as magnetron power, working pressure, and chamber temperature, as well as the design of the restricting configuration and substrate holders and their influence on the resulting inclined thin film crystallinity, and morphology.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400020","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhiwei Guo, Yuqian Wang, Shaolin Ke, Xiaoqiang Su, Jie Ren, Hong Chen
In article number 2300125, Zhiwei Guo, Hong Chen, and co-workers review the research into split-ring resonators (SRRs) and explore devices made from them. As a powerful platform to demonstrate abundant low-dimensional topology, SRRs can support novel functional photonic applications, including wireless power transfer, sensing, and switching. Finally, they provide an outlook on the potential challenges and opportunities of SRR-based devices combined with gauge field, non-Hermitian, and nonlinear physics.