Chen-Fang Kang, Shih-Min Huang, Yen-Hsuan Chen, Jian-Fu Tang, Po-Kang Yang
Resistive switching memory has emerged as a promising candidate for next-generation data storage and is regarded as a key enabler for the advancement of artificial intelligence technologies. However, conventional resistive memory architectures face critical challenges, including sneak-path current interference, poor scalability, and limited integration density, which hinder their practical deployment in high-density neuromorphic systems. In this study, a self-rectifying 3D 2 × 2 crossbar array based on a diode–memristor–diode (DMD) architecture using a Pt/SrMnO3/Pt configuration is demonstrated for the first time, exhibiting excellent electrical performance and outstanding operational stability. The device effectively suppresses sneak-path currents, thereby enabling the integration of high-density memory arrays. The reset process is quantitatively analyzed through machine learning applied to electrical transport characteristics, while the high-resistance state is accurately described using the Poisson–Boltzmann formalism. These results highlight the significant potential of the stacked Pt/SrMnO3/Pt structure for next-generation non-volatile memory and provide a solid foundation for its application in neuromorphic computing and artificial neural networks.
{"title":"Modeling Self-Rectifying Bipolar Resistive Switching Memory Through Machine Learning","authors":"Chen-Fang Kang, Shih-Min Huang, Yen-Hsuan Chen, Jian-Fu Tang, Po-Kang Yang","doi":"10.1002/apxr.202500116","DOIUrl":"https://doi.org/10.1002/apxr.202500116","url":null,"abstract":"<p>Resistive switching memory has emerged as a promising candidate for next-generation data storage and is regarded as a key enabler for the advancement of artificial intelligence technologies. However, conventional resistive memory architectures face critical challenges, including sneak-path current interference, poor scalability, and limited integration density, which hinder their practical deployment in high-density neuromorphic systems. In this study, a self-rectifying 3D 2 × 2 crossbar array based on a diode–memristor–diode (DMD) architecture using a Pt/SrMnO<sub>3</sub>/Pt configuration is demonstrated for the first time, exhibiting excellent electrical performance and outstanding operational stability. The device effectively suppresses sneak-path currents, thereby enabling the integration of high-density memory arrays. The reset process is quantitatively analyzed through machine learning applied to electrical transport characteristics, while the high-resistance state is accurately described using the Poisson–Boltzmann formalism. These results highlight the significant potential of the stacked Pt/SrMnO<sub>3</sub>/Pt structure for next-generation non-volatile memory and provide a solid foundation for its application in neuromorphic computing and artificial neural networks.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500116","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145969746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Matin Forouzmehr, Hamed Pourkheirollah, Fabio Leite, Elin Howard, Sunil Kumar Behera, Amit Tewari, Jarmo Laakso, Kimmo Lahtonen, Cesar A. T. Laia, A. Jorge Parola, Phillipe Marrec, Donald Lupo, Paul. R. Berger
This study explores the integration of atomic layer deposited (ALD) HfO2 dielectric films with solution-processed In2O3 semiconductor channel, thin-film transistors (TFTs) for a silicon chip-free temperature sensor label. The inclusion of the HfO2 high-κ dielectric permits reduced voltage operation of the sensor label. HfO2 films are deposited by atomic layer deposition (ALD) at three different hot source temperatures (80°C, 90°C, 100°C), with XPS revealing improved stoichiometry and O/Hf ratios of 1.75, 1.92, and 1.95, respectively, as temperature increases. MOSCAP measurements show improved oxide/semiconductor interface with higher deposition temperatures. The extracted dielectric constants (εr ≈ 18.5–18.8) correspond to an equivalent oxide thickness (EOT) of about 3.1 nm, consistent with optimized high-κ film formation. To enhance drain current, a reduced 7.5 nm HfO2 film thickness is used, achieving higher current but reducing yield by 30% due to increased leakage probability in ultrathin films. A voltage divider circuit is developed to integrate an electrochemical thermal sensor, TFT, and an irreversible visual indicator (IVI), allowing for temperature monitoring with a resistivity change of three orders of magnitude at 8°C. The circuit is powered by a 60 mF supercapacitor array providing approximately 0.21 J of available energy, resulting in IVI activation within 40 min at measured activation currents of 20 µA. The system demonstrates potential for low-voltage, energy-efficient, silicon-free sensor labels in applications such as food safety and healthcare monitoring.
{"title":"Optimization of High-κ HfO2 Transistor Dielectrics by Atomic Layer Deposition as an Enabler of Novel Thin-Film Circuits and Sensors","authors":"Matin Forouzmehr, Hamed Pourkheirollah, Fabio Leite, Elin Howard, Sunil Kumar Behera, Amit Tewari, Jarmo Laakso, Kimmo Lahtonen, Cesar A. T. Laia, A. Jorge Parola, Phillipe Marrec, Donald Lupo, Paul. R. Berger","doi":"10.1002/apxr.202500191","DOIUrl":"https://doi.org/10.1002/apxr.202500191","url":null,"abstract":"<p>This study explores the integration of atomic layer deposited (ALD) HfO<sub>2</sub> dielectric films with solution-processed In<sub>2</sub>O<sub>3</sub> semiconductor channel, thin-film transistors (TFTs) for a silicon chip-free temperature sensor label. The inclusion of the HfO<sub>2</sub> high-κ dielectric permits reduced voltage operation of the sensor label. HfO<sub>2</sub> films are deposited by atomic layer deposition (ALD) at three different hot source temperatures (80°C, 90°C, 100°C), with XPS revealing improved stoichiometry and O/Hf ratios of 1.75, 1.92, and 1.95, respectively, as temperature increases. MOSCAP measurements show improved oxide/semiconductor interface with higher deposition temperatures. The extracted dielectric constants (<i>ε</i><sub>r</sub> ≈ 18.5–18.8) correspond to an equivalent oxide thickness (EOT) of about 3.1 nm, consistent with optimized high-κ film formation. To enhance drain current, a reduced 7.5 nm HfO<sub>2</sub> film thickness is used, achieving higher current but reducing yield by 30% due to increased leakage probability in ultrathin films. A voltage divider circuit is developed to integrate an electrochemical thermal sensor, TFT, and an irreversible visual indicator (IVI), allowing for temperature monitoring with a resistivity change of three orders of magnitude at 8°C. The circuit is powered by a 60 mF supercapacitor array providing approximately 0.21 J of available energy, resulting in IVI activation within 40 min at measured activation currents of 20 µA. The system demonstrates potential for low-voltage, energy-efficient, silicon-free sensor labels in applications such as food safety and healthcare monitoring.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500191","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145983539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liquid metals possess excellent electrical conductivity, fluidity, and high density, exhibiting unique electroresponsive characteristics under applied electric fields. This article systematically investigates the instantaneous response, frequency synchronization, and resonance phenomena of gallium-based liquid metal droplets under square-wave alternating electric fields. We comprehensively clarify the effects of droplet volume, alloy composition, electric field intensity, and mechanical confinement on electrically induced resonance behavior. In free spaces, we reveal a critical transition in governing laws characterized by the modified Bond number (Bom) as the dimensionless parameter. We observe coordinated linear responses of transverse and longitudinal amplitudes to applied electric field amplitude for liquid metal droplets with Bom < 1, while droplets with Bom > 1 exhibit nonlinear responses featuring asymmetric deformation and multi-modal transitions. Within confined channels, droplets display multi-mode standing wave patterns, with the number of surface wave crests correlating with droplet volume. Multi-droplet systems display collective dynamics modulated by array size and the spatial positioning of droplets within the collective. These findings establish theoretical foundations for controlling and amplifying the electrically induced behavior of positionally stable liquid metal droplets, and open new pathways for developing liquid metal resonance-based multi-excitation point mixers, flexible actuators, and reconfigurable electronic systems.
{"title":"Electrically Induced Liquid Metal Resonance Phenomena","authors":"Jingyi Li, Ju Wang, Xi Zhao, Jing Liu","doi":"10.1002/apxr.202500160","DOIUrl":"https://doi.org/10.1002/apxr.202500160","url":null,"abstract":"<p>Liquid metals possess excellent electrical conductivity, fluidity, and high density, exhibiting unique electroresponsive characteristics under applied electric fields. This article systematically investigates the instantaneous response, frequency synchronization, and resonance phenomena of gallium-based liquid metal droplets under square-wave alternating electric fields. We comprehensively clarify the effects of droplet volume, alloy composition, electric field intensity, and mechanical confinement on electrically induced resonance behavior. In free spaces, we reveal a critical transition in governing laws characterized by the modified Bond number (Bo<sub>m</sub>) as the dimensionless parameter. We observe coordinated linear responses of transverse and longitudinal amplitudes to applied electric field amplitude for liquid metal droplets with Bo<sub>m</sub> < 1, while droplets with Bo<sub>m</sub> > 1 exhibit nonlinear responses featuring asymmetric deformation and multi-modal transitions. Within confined channels, droplets display multi-mode standing wave patterns, with the number of surface wave crests correlating with droplet volume. Multi-droplet systems display collective dynamics modulated by array size and the spatial positioning of droplets within the collective. These findings establish theoretical foundations for controlling and amplifying the electrically induced behavior of positionally stable liquid metal droplets, and open new pathways for developing liquid metal resonance-based multi-excitation point mixers, flexible actuators, and reconfigurable electronic systems.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500160","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145984039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Syed Shovon Mahbub Mahin, Suptajoy Barua, B. Rahman Rano, Ishtiaque M. Syed, S. H. Naqib
Transition metal penta-tellurides, ZrTe5 and HfTe5 have recently drawn a lot of attention due to their fascinating physical properties and for being prominent materials showing topological phase transitions. In this work, we present first in-depth investigation of elasto-mechanical, thermophysical, and optical properties of these compounds. In particular, we analyzed the directional dependence of the elastic properties, explored the optical response for different photon polarization directions and examined previously unreported potential industrial applications of these materials. We also studied their electronic and topological properties. We used Density Functional Theory (DFT) based calculations to study all of these properties. This study suggests that the materials are mechanically stable, possess high mechanical and bondinganisotropy, are soft and brittle in nature. Investigation of thermophysical properties indicates weak bonding strength in these compounds and suggests their possible application in acoustic and thermoelectric devices. Examination of their optical characteristics reveals that they have high refractive indices at low energy. They are very good ultraviolate absorbers and potential candidates for solar coating devices. Our study also reveals that these materials show characteristics of weak ℤ2 topological insulators. Spin-orbit interaction is responsible for enhancing energy gaps and promoting insulating characteristics in these compounds.
{"title":"DFT-Based Insights Into Elastic, Thermophysical, Electronic, and Optical Properties of Topological Insulators XTe5 (X = Zr, Hf)","authors":"Syed Shovon Mahbub Mahin, Suptajoy Barua, B. Rahman Rano, Ishtiaque M. Syed, S. H. Naqib","doi":"10.1002/apxr.202500132","DOIUrl":"https://doi.org/10.1002/apxr.202500132","url":null,"abstract":"<p>Transition metal penta-tellurides, ZrTe<sub>5</sub> and HfTe<sub>5</sub> have recently drawn a lot of attention due to their fascinating physical properties and for being prominent materials showing topological phase transitions. In this work, we present first in-depth investigation of elasto-mechanical, thermophysical, and optical properties of these compounds. In particular, we analyzed the directional dependence of the elastic properties, explored the optical response for different photon polarization directions and examined previously unreported potential industrial applications of these materials. We also studied their electronic and topological properties. We used Density Functional Theory (DFT) based calculations to study all of these properties. This study suggests that the materials are mechanically stable, possess high mechanical and bondinganisotropy, are soft and brittle in nature. Investigation of thermophysical properties indicates weak bonding strength in these compounds and suggests their possible application in acoustic and thermoelectric devices. Examination of their optical characteristics reveals that they have high refractive indices at low energy. They are very good ultraviolate absorbers and potential candidates for solar coating devices. Our study also reveals that these materials show characteristics of weak ℤ<sub>2</sub> topological insulators. Spin-orbit interaction is responsible for enhancing energy gaps and promoting insulating characteristics in these compounds.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500132","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145970167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Laura Valencia Molina, Zlata Fedorova, Angela Barreda, Maximilian Weissflog, Rocio Camacho Morales, Seung Heon Han, Anastasia Romashkina, Antony George, Suprova Das, Tobias Bucher, Ralph Schlegel, Andrey Turchanin, Jeetendra Gour, Thomas Siefke, Thomas Pertsch, Falk Eilenberger, Dragomir Neshev, Isabelle Staude
Monolayers of transition metal dichacogenides (1L-TMDs) show strong second-order nonlinearity and symmetry-driven selection rules from their threefold lattice symmetry. This process resembles the valley-contrasting selection rules for photoluminescence (PL) in these materials. However, the underlying physical mechanisms fundamentally differ since second harmonic generation (SHG) is a coherent process, whereas PL is incoherent, leading to distinct interactions with photonic nanoresonators. In this study, the far-field circular polarization properties of SHG from MoS2 monolayers resonantly interacting with spherical gold nanoparticles were investigated. The results indicate that the coherence of the second harmonic allows its polarization to be mostly preserved, unlike in an incoherent process, where the polarization is scrambled. These findings provide important insights for future applications in valleytronics and quantum nanooptics, where both coherent and incoherent processes can be probed in such hybrid systems without altering sample geometry or operational wavelength.
{"title":"Role of Coherence in Polarization Response of Hybrid Monolayer MoS2-Gold Nanoparticle Systems","authors":"Laura Valencia Molina, Zlata Fedorova, Angela Barreda, Maximilian Weissflog, Rocio Camacho Morales, Seung Heon Han, Anastasia Romashkina, Antony George, Suprova Das, Tobias Bucher, Ralph Schlegel, Andrey Turchanin, Jeetendra Gour, Thomas Siefke, Thomas Pertsch, Falk Eilenberger, Dragomir Neshev, Isabelle Staude","doi":"10.1002/apxr.202500104","DOIUrl":"https://doi.org/10.1002/apxr.202500104","url":null,"abstract":"<p>Monolayers of transition metal dichacogenides (1L-TMDs) show strong second-order nonlinearity and symmetry-driven selection rules from their threefold lattice symmetry. This process resembles the valley-contrasting selection rules for photoluminescence (PL) in these materials. However, the underlying physical mechanisms fundamentally differ since second harmonic generation (SHG) is a coherent process, whereas PL is incoherent, leading to distinct interactions with photonic nanoresonators. In this study, the far-field circular polarization properties of SHG from MoS<sub>2</sub> monolayers resonantly interacting with spherical gold nanoparticles were investigated. The results indicate that the coherence of the second harmonic allows its polarization to be mostly preserved, unlike in an incoherent process, where the polarization is scrambled. These findings provide important insights for future applications in valleytronics and quantum nanooptics, where both coherent and incoherent processes can be probed in such hybrid systems without altering sample geometry or operational wavelength.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500104","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145987315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seemab Hussnain, Song Ye, Yan Wang, Xiujuan Wang, Juan Liu, Qaisar Abbas Naqvi, Haibo Zeng, Weijin Li
Metal–organic frameworks (MOFs) present a unique class of crystalline materials with programmable architectures that enable precise control over dielectric behavior. Their well-defined metal nodes, organic linkers, and porous structures facilitate polarization mechanisms, critical for high-performance dielectrics. The beauties of the architectural design strategies from homogeneous MOFs, phase-engineered heterogeneous MOFs, MOFs incorporated into polymer matrices as fillers for low dielectric loss, stimuli-responsive MOFs, and conductive MOFs are systematically analyzed to reveal the fundamental interplay between framework structure, charge dynamics, and dielectric functionality. Importantly, their intrinsic structural regularity and defect control support high breakdown strength through deep trap states and uniform electric field distribution. Last but not least, the prospects of MOFs such as device-level integration, hybridization with 2D materials, and machine learning to connect structure-polarizability relationships and address their key state-of-the-art challenges are discussed.
{"title":"Metal–Organic Framework-Based Materials for Dielectric Energy Storage","authors":"Seemab Hussnain, Song Ye, Yan Wang, Xiujuan Wang, Juan Liu, Qaisar Abbas Naqvi, Haibo Zeng, Weijin Li","doi":"10.1002/apxr.202500190","DOIUrl":"https://doi.org/10.1002/apxr.202500190","url":null,"abstract":"<p>Metal–organic frameworks (MOFs) present a unique class of crystalline materials with programmable architectures that enable precise control over dielectric behavior. Their well-defined metal nodes, organic linkers, and porous structures facilitate polarization mechanisms, critical for high-performance dielectrics. The beauties of the architectural design strategies from homogeneous MOFs, phase-engineered heterogeneous MOFs, MOFs incorporated into polymer matrices as fillers for low dielectric loss, stimuli-responsive MOFs, and conductive MOFs are systematically analyzed to reveal the fundamental interplay between framework structure, charge dynamics, and dielectric functionality. Importantly, their intrinsic structural regularity and defect control support high breakdown strength through deep trap states and uniform electric field distribution. Last but not least, the prospects of MOFs such as device-level integration, hybridization with 2D materials, and machine learning to connect structure-polarizability relationships and address their key state-of-the-art challenges are discussed.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145970195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on optimizing the spectral purity of heralded single photons in the telecom O-band, where single photons can be propagated with low loss and low dispersion in a standard telecom optical fiber. We numerically searched for various group-velocity-matching conditions and corresponding optimal poling structures of a potassium titanyl phosphate crystal for spontaneous parametric downconversion. Our poling optimization results using phase-matching coherence-length and sub-coherence-length modulation schemes show % spectral purity with pump wavelengths ranging from 603.8 to 887.3 nm. Some optimized configurations are feasible with off-the-shelf lasers and single-photon detectors. Moreover, by investigating noise photon spectra for different poling optimization methods, we show that, in practice, appropriate, gentle spectral filtering helps achieve high purity. This study will pave the way for developing practical quantum sources for quantum information applications at the telecom O-band.
{"title":"Optimized Spectral Purity of Heralded Single Photons at the Telecom O-Band","authors":"Wu-Hao Cai, Soyoung Baek, Rui-Bo Jin, Fumihiro Kaneda","doi":"10.1002/apxr.202500167","DOIUrl":"https://doi.org/10.1002/apxr.202500167","url":null,"abstract":"<p>We report on optimizing the spectral purity of heralded single photons in the telecom O-band, where single photons can be propagated with low loss and low dispersion in a standard telecom optical fiber. We numerically searched for various group-velocity-matching conditions and corresponding optimal poling structures of a potassium titanyl phosphate crystal for spontaneous parametric downconversion. Our poling optimization results using phase-matching coherence-length and sub-coherence-length modulation schemes show <span></span><math></math>% spectral purity with pump wavelengths ranging from 603.8 to 887.3 nm. Some optimized configurations are feasible with off-the-shelf lasers and single-photon detectors. Moreover, by investigating noise photon spectra for different poling optimization methods, we show that, in practice, appropriate, gentle spectral filtering helps achieve high purity. This study will pave the way for developing practical quantum sources for quantum information applications at the telecom O-band.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500167","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145719754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bauyrzhan Ye Zhumadilov, Rakhymzhan Ye Zhumadilov, Renata R. Nemkayeva, Aiymkul A. Markhabayeva, Farabi Bozheyev, Tlekkabul S. Ramazanov, Yerassyl Yerlanuly, Maratbek T. Gabdullin
In the past decades, carbon nanowalls (CNWs) have attracted great interest due to their specific electronic structure and morphology suitable for optoelectronic, photo- and electrochemical systems. This report presents a comparative study on the growth of CNWs on various substrates–quartz (SiO2), stainless steel (SS304), tantalum (Ta), and titanium (Ti) using the capacitively coupled plasma-enhanced chemical vapor deposition (CCP-PECVD). It is found that the substrate properties significantly influence the morphology, degree of graphitization, and electrochemical characteristics of the CNWs. SiO2 provides the lowest defect density and highest structural order, while Ta and Ti promote accelerated CNWs growth due to their high thermal conductivity. Electrochemical tests reveal pronounced photoelectrochemical activity of the CNWs, especially on metallic substrates. Impedance spectroscopy indicates an increase in the electrochemical activity after CNWs growth. The results highlight the importance of substrate selection for controlling the structural and functional properties of the CNWs.
{"title":"Influence of Substrate Type and Synthesis Time on Morphological and Structural Properties of Carbon Nanowalls","authors":"Bauyrzhan Ye Zhumadilov, Rakhymzhan Ye Zhumadilov, Renata R. Nemkayeva, Aiymkul A. Markhabayeva, Farabi Bozheyev, Tlekkabul S. Ramazanov, Yerassyl Yerlanuly, Maratbek T. Gabdullin","doi":"10.1002/apxr.202500156","DOIUrl":"https://doi.org/10.1002/apxr.202500156","url":null,"abstract":"<p>In the past decades, carbon nanowalls (CNWs) have attracted great interest due to their specific electronic structure and morphology suitable for optoelectronic, photo- and electrochemical systems. This report presents a comparative study on the growth of CNWs on various substrates–quartz (SiO<sub>2</sub>), stainless steel (SS304), tantalum (Ta), and titanium (Ti) using the capacitively coupled plasma-enhanced chemical vapor deposition (CCP-PECVD). It is found that the substrate properties significantly influence the morphology, degree of graphitization, and electrochemical characteristics of the CNWs. SiO<sub>2</sub> provides the lowest defect density and highest structural order, while Ta and Ti promote accelerated CNWs growth due to their high thermal conductivity. Electrochemical tests reveal pronounced photoelectrochemical activity of the CNWs, especially on metallic substrates. Impedance spectroscopy indicates an increase in the electrochemical activity after CNWs growth. The results highlight the importance of substrate selection for controlling the structural and functional properties of the CNWs.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500156","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145719516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The device performance of Cu–In–Zn–S (CIZS)-based quantum-dot light-emitting diodes (QLEDs) still lags far behind CdSe-based QLEDs, which mainly arise from unique trap-related recombination in the CIZS quantum dots (QDs). Herein, the carrier dynamics behavior of CIZS-based and CdSe-based QLEDs was studied by transient electroluminescence (TrEL) technology, and the difference in the falling edge of the TrEL response was obviously observed in both QLEDs. The results show that Cu-related defect states (Cu-states) created a substantial hole injection barrier, making traditional hole-transport layer modifications ineffective for carrier injection and transport balance. By engineering the ZnO electron transport layer (ETL), the electron injection and transport were reduced, which suppressed trap-state-mediated non-radiative recombination. At last, carrier dynamics models were proposed to clarify the phenomenon of falling edge overshoot in the CIZS-based QLEDs. This approach overcomes the intrinsic hole transport limitation in CIZS QDs caused by Cu-states, offering a viable method to balance the carrier injection and transport without enhancing hole injection.
{"title":"Unrevealing the Carrier Dynamics Behavior of Cu–In–Zn–S-Based Quantum Dot Light-Emitting Diodes by Transient Electroluminescence Spectroscopy","authors":"Jinxing Zhao, Bingyan Zhu, Siyao Niu, Xiankun Zheng, Xiulin Xie, Xu Li, Wenyu Ji, Aiwei Tang","doi":"10.1002/apxr.202500178","DOIUrl":"https://doi.org/10.1002/apxr.202500178","url":null,"abstract":"<p>The device performance of Cu–In–Zn–S (CIZS)-based quantum-dot light-emitting diodes (QLEDs) still lags far behind CdSe-based QLEDs, which mainly arise from unique trap-related recombination in the CIZS quantum dots (QDs). Herein, the carrier dynamics behavior of CIZS-based and CdSe-based QLEDs was studied by transient electroluminescence (TrEL) technology, and the difference in the falling edge of the TrEL response was obviously observed in both QLEDs. The results show that Cu-related defect states (Cu-states) created a substantial hole injection barrier, making traditional hole-transport layer modifications ineffective for carrier injection and transport balance. By engineering the ZnO electron transport layer (ETL), the electron injection and transport were reduced, which suppressed trap-state-mediated non-radiative recombination. At last, carrier dynamics models were proposed to clarify the phenomenon of falling edge overshoot in the CIZS-based QLEDs. This approach overcomes the intrinsic hole transport limitation in CIZS QDs caused by Cu-states, offering a viable method to balance the carrier injection and transport without enhancing hole injection.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500178","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145983775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yifei (Effie) Gao, Zilin Jiang, Nikolaos K. Ioannou, Domna G. Kotsifaki
The rapid and accurate detection of viral biomarkers is critical for controlling infectious disease outbreaks, as highlighted by the COVID-19 pandemic. Here, we present a label-free platform for the ultrasensitive detection of SARS-CoV-2 spike protein and IgG antibodies in liquid using surface-enhanced Raman spectroscopy (SERS) based on an array of plasmonic H-shaped nano-apertures. The nanostructure is designed to support a resonance at 777.8 nm. The Raman signal of both biomolecules was recorded at several locations on the nanostructure under off-resonance laser excitation at 785 nm, confirming its reproducibility. The designed nanostructure enables limit of detection of 0.85 ng/mL in a liquid environment, without the need for complex surface functionalization or labeling. Using principal component analysis (PCA), we successfully distinguished between spike protein, IgG antibodies, and their mixtures, highlighting the platform's ability to analyze complex biological matrices. This work advances the development of sensitive SERS-based biosensors for the rapid and accurate detection of emerging pathogens in liquid environments.
{"title":"SERS Detection of SARS-CoV-2 Spike Proteins and IgG Antibodies Using Metallic H-type Nano-Apertures","authors":"Yifei (Effie) Gao, Zilin Jiang, Nikolaos K. Ioannou, Domna G. Kotsifaki","doi":"10.1002/apxr.202500143","DOIUrl":"https://doi.org/10.1002/apxr.202500143","url":null,"abstract":"<p>The rapid and accurate detection of viral biomarkers is critical for controlling infectious disease outbreaks, as highlighted by the COVID-19 pandemic. Here, we present a label-free platform for the ultrasensitive detection of SARS-CoV-2 spike protein and IgG antibodies in liquid using surface-enhanced Raman spectroscopy (SERS) based on an array of plasmonic <i>H</i>-shaped nano-apertures. The nanostructure is designed to support a resonance at 777.8 nm. The Raman signal of both biomolecules was recorded at several locations on the nanostructure under off-resonance laser excitation at 785 nm, confirming its reproducibility. The designed nanostructure enables limit of detection of 0.85 ng/mL in a liquid environment, without the need for complex surface functionalization or labeling. Using principal component analysis (PCA), we successfully distinguished between spike protein, IgG antibodies, and their mixtures, highlighting the platform's ability to analyze complex biological matrices. This work advances the development of sensitive SERS-based biosensors for the rapid and accurate detection of emerging pathogens in liquid environments.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 12","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500143","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145719415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}