Solar Cells最新文献

Federal and state agencies have classified cadmium and selenium compounds as hazardous. Consequently, facilities using these materials are subject to various regulations and guidelines developed by these agencies. The intent of these guidelines is to protect worker and public health from accidental and routine chemical exposures. In this context, the agencies provide specific limits on public and occupational exposures, and generalized guidance on methods or approaches for attaining such limits. This paper gives background information on the toxicology and pharmacology of cadmium and selenium compounds, and reviews several newly proposed or adopted Federal and state regulations which can affect photovoltaic manufacturing facility operations using these and other similar chemicals.

II–VI semiconductors and their alloys are promising thin film photovoltaic materials. Polycrystalline films of cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium zinc telluride ($\text{Cd}{}_{\mathrm{x}}\text{Zn}{}_{\mathrm{1-x}}\text{Te}$), and mercury zinc telluride ($\text{Hg}{}_{\mathrm{x}}\text{Zn}{}_{\mathrm{1-x}}\text{Te}$) were deposited onto glass and transparent-conducting-semiconductor (TCS) coated glass substrates by metal-organic chemical vapor deposition. Emphasis was directed to the doping of CdTe films, ohmic contacts to p-CdTe, and thin film CdTe homojunctions. CdTe films may be doped intrinsically or extrinsically; gallium and arsenic were used as the extrinsic n and p dopant respectively. p⁺-ZnTe films deposited in situ were used as an ohmic contact to p-CdTe films. Thin film CdTe homojunctions were prepared by the successive in situ deposition of n-CdTe, p-CdTe, and p⁺-ZnTe films on SnO₂-coated glass substrates, and their properties were investigated. The properties of $\text{Cd}{}_{\mathrm{x}}\text{Zn}{}_{\mathrm{1-x}}\text{Te}$ and $\text{Hg}{}_{\mathrm{x}}\text{Zn}{}_{\mathrm{1-x}}\text{Te}$ films with band gap energy in the range 1.65–1.75 eV deposited onto glass and TCS-coated glass substrates were studied.

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 μm h⁻¹. Device quality GaAs and $\text{As}{}_{\mathrm{x}}\text{Ga}{}_{\mathrm{1-x}}\text{As}$ films were grown with p-type background carbon doping in the ranges 10¹⁵–10¹⁹ cm⁻³ and 10¹⁶–10²⁰ cm⁻³ respectively. N-type films were achieved by SiH₄ doping, producing carrier concentrations in the range 10¹⁶–10¹⁸ cm⁻³. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed.

Using tandem cell test units with GaAs and GaSb concentrator cells, we have achieved a NASA verified conversion efficiency of 30.8% for space applications. Here, we describe tandem gallium cell assemblies and flex circuit tape interconnect concepts for use in practical power generating concentrator panels. The forward and reverse characteristics of tandem cell voltage-matched circuits are described. It is noted that the GaSb IR cell doubles as a bypass diode, providing shading protection for the GaAs cell.

During the research stage, many photovoltaic solar cells suffer substantial power loss due to the use of non-optimum top contact grids. The very nature of solar cell research implies that many cell parameters will be in a continual state of change and thus the grid will seldom be truly optimized. However, several things can be done to ensure that a solar cell grid will perform well even if the parameters vary. In this paper, critical parameters for solar cell grid modeling and design are identified and discussed. Particular attention is paid to the manner in which process aspects affect these parameters and the subsequent power loss of the grid. Finally, practical guidelines are presented, the use of which can minimize the effect of process variation.

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al_0.37Ga_0.63As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth of germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed.

Formation of polycrystalline thin film CuInSe₂ was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 10⁴ cm⁻¹ range, and an optical band gap of 1.0 eV.

This paper reviews the status of CuInSe₂ (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm² modules and 37.8 W (9.7% aperture efficiency) on 3900 m² modules. The definition of 0.4 m² CIS module pilot production is progressing.