Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686386
M. Miyata, S. Yakata, M. Hara, H. Wada, T. Kimura
We have proposed a method for controlling the vortex chirality in a regular polygonal nanomagnet with an odd number of sides using an in-plane magnetic field. We confirmed the reliability of the proposed method in the triangle, pentagonal and heptagonal nanomagnets by using micromagnetic simulation. However, when the number of the sides is 9 or more, the chirality does not change systematically because of the insufficient in-plane shape anisotropy. Stabilizations of a single vortex in polygonal nanomagnets with an even number of sides have been also investigated.
{"title":"Control of vortex chirality in polygonal nanomagnets","authors":"M. Miyata, S. Yakata, M. Hara, H. Wada, T. Kimura","doi":"10.1109/TENCON.2010.5686386","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686386","url":null,"abstract":"We have proposed a method for controlling the vortex chirality in a regular polygonal nanomagnet with an odd number of sides using an in-plane magnetic field. We confirmed the reliability of the proposed method in the triangle, pentagonal and heptagonal nanomagnets by using micromagnetic simulation. However, when the number of the sides is 9 or more, the chirality does not change systematically because of the insufficient in-plane shape anisotropy. Stabilizations of a single vortex in polygonal nanomagnets with an even number of sides have been also investigated.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"14 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120903387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686640
Y. Martin, Zhenyu Li, T. Tsutsumi, J. Suehiro, K. Imasaka, S. Ohtsuka
It is important to detect decomposition of insulating gas SF6 caused by partial discharges for gas-insulated switchgear (GIS). In the previous result, the author developed a novel partial discharges sensing using carbon nanotube (CNT) gas sensor. In recently, an application of high voltage DC for long distance electric power transmission has been often used in various countries as the interconnection system and overload demand. In this study we applied the CNT gas sensor to detect partial discharges generated by high voltage DC. There was polarity profile for DC compared AC discharges. It was found, response of the sensor in the case of negative discharges was much higher than positive discharges under the same experimental condition. And the decomposed gases for each case were identified by FT-IR spectroscopy. The result indicated absorption peaks correspond to SF4 and SOF2 of positive discharges was much higher than that of negative discharges.
{"title":"Identification of DC corona generating SF6 decomposition gases adsorbed on CNT gas sensor using FTIR spectroscopy","authors":"Y. Martin, Zhenyu Li, T. Tsutsumi, J. Suehiro, K. Imasaka, S. Ohtsuka","doi":"10.1109/TENCON.2010.5686640","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686640","url":null,"abstract":"It is important to detect decomposition of insulating gas SF6 caused by partial discharges for gas-insulated switchgear (GIS). In the previous result, the author developed a novel partial discharges sensing using carbon nanotube (CNT) gas sensor. In recently, an application of high voltage DC for long distance electric power transmission has been often used in various countries as the interconnection system and overload demand. In this study we applied the CNT gas sensor to detect partial discharges generated by high voltage DC. There was polarity profile for DC compared AC discharges. It was found, response of the sensor in the case of negative discharges was much higher than positive discharges under the same experimental condition. And the decomposed gases for each case were identified by FT-IR spectroscopy. The result indicated absorption peaks correspond to SF4 and SOF2 of positive discharges was much higher than that of negative discharges.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127239380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686435
Y. Omori, K. Araki
Most software specifications are discussed on natural language among stakeholders. There is, however, a semantic gap between natural language and programming language, which sometime causes discrepancies between them and misunderstanding among stakeholders. Formal language compensates the gap so that realizes early verification in software development process. We developed a dictionary tool to support the translation from natural language to formal language. The tool provides functionalities those are easy registration of keywords to the dictionary and exhaustive marking of the keywords. The dictionary represents a map between equivalent keywords in natural language and formal language which gives defined semantics, and the tool enhance the coverage of the keywords in the formal specification. In short, the dictionary contains conceptual keywords and specific semantics in the problem; therefore, it corresponds to a domain of the system. A system generally belongs to multi problem domains and also contains multi sub domains, consequently some dictionaries should be dynamically alternated through the translation process. APIs related to dictionary operation are proposed and verified in this paper, and the dictionary class is introduced to map the relation among domains.
{"title":"Tool support for domain analysis of the software specification in natural language","authors":"Y. Omori, K. Araki","doi":"10.1109/TENCON.2010.5686435","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686435","url":null,"abstract":"Most software specifications are discussed on natural language among stakeholders. There is, however, a semantic gap between natural language and programming language, which sometime causes discrepancies between them and misunderstanding among stakeholders. Formal language compensates the gap so that realizes early verification in software development process. We developed a dictionary tool to support the translation from natural language to formal language. The tool provides functionalities those are easy registration of keywords to the dictionary and exhaustive marking of the keywords. The dictionary represents a map between equivalent keywords in natural language and formal language which gives defined semantics, and the tool enhance the coverage of the keywords in the formal specification. In short, the dictionary contains conceptual keywords and specific semantics in the problem; therefore, it corresponds to a domain of the system. A system generally belongs to multi problem domains and also contains multi sub domains, consequently some dictionaries should be dynamically alternated through the translation process. APIs related to dictionary operation are proposed and verified in this paper, and the dictionary class is introduced to map the relation among domains.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124784621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686013
Kenji Yamada, T. Itokawa, T. Kitasuka, M. Aritsugi
In this paper, we try to reduce the amount of control traffic of the optimized link state routing protocol (OLSR). OLSR is a proactive routing protocol for mobile ad-hoc networks (MANETs). OLSR is known well as a low control traffic routing protocol, since it adopts multipoint relays (MPRs). MPRs concept significantly reduces the number of broadcast messages during the flooding process. Although MPR concept is optimal for each node to transmit its messages to all two hop neighbors, we show there are still redundant control messages which can be piggybacked with other control messages in dense networks. This redundancy is caused by the selection procedure of MPRs, which run on each node independently of its neighbor nodes. In this paper, we propose a cooperative MPR selection procedure, to increase messages which are piggybacked into a single control packet. Through simulation, we demonstrate that the proposed cooperative MPR selection procedure reduces the number of routing packets in high-density network, and network reachability is kept similar to that of the conventional MPR selection procedure.
{"title":"Cooperative MPR selection to reduce topology control packets in OLSR","authors":"Kenji Yamada, T. Itokawa, T. Kitasuka, M. Aritsugi","doi":"10.1109/TENCON.2010.5686013","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686013","url":null,"abstract":"In this paper, we try to reduce the amount of control traffic of the optimized link state routing protocol (OLSR). OLSR is a proactive routing protocol for mobile ad-hoc networks (MANETs). OLSR is known well as a low control traffic routing protocol, since it adopts multipoint relays (MPRs). MPRs concept significantly reduces the number of broadcast messages during the flooding process. Although MPR concept is optimal for each node to transmit its messages to all two hop neighbors, we show there are still redundant control messages which can be piggybacked with other control messages in dense networks. This redundancy is caused by the selection procedure of MPRs, which run on each node independently of its neighbor nodes. In this paper, we propose a cooperative MPR selection procedure, to increase messages which are piggybacked into a single control packet. Through simulation, we demonstrate that the proposed cooperative MPR selection procedure reduces the number of routing packets in high-density network, and network reachability is kept similar to that of the conventional MPR selection procedure.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"25 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132149059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5685920
M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki
Recent progress in nano-materials has made them attractive for an increasing number of their applications such as electronics, medical components, fillers, catalysts, and fuel cells. Nanomaterials need structures and components which exhibit novel and significantly improved physical, chemical and biological properties, because of their nanoscale size, and hence fabrication of nanomaterials by bottom-up processes as well as that by top-down ones are required. A wide variety of nano-material and nano-system fabrication methods are required to be developed to realize complex nano-world. Plasma-based fabrication of nanomaterials and nanostructures is widely employed for top-down processes such as ULSI fabrication as well as bottom-up processes such as carbon nanotube production. We are exploring frontier science of interactions between plasmas and nano-interfaces by focusing on novel features such as fluctuations of interactions due to the nanometer scale. Plasma processing based on the science realizes highly precise top-down processes by suppressing fluctuations and well controlled self-organized bottom-up processes by controlling fluctuations. We aim to bring about an explosive development of fabrication technologies of nanomaterials and nanostructures.
{"title":"Keynote speech I: Fluctuation control for plasma nanotechnologies","authors":"M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki","doi":"10.1109/TENCON.2010.5685920","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5685920","url":null,"abstract":"Recent progress in nano-materials has made them attractive for an increasing number of their applications such as electronics, medical components, fillers, catalysts, and fuel cells. Nanomaterials need structures and components which exhibit novel and significantly improved physical, chemical and biological properties, because of their nanoscale size, and hence fabrication of nanomaterials by bottom-up processes as well as that by top-down ones are required. A wide variety of nano-material and nano-system fabrication methods are required to be developed to realize complex nano-world. Plasma-based fabrication of nanomaterials and nanostructures is widely employed for top-down processes such as ULSI fabrication as well as bottom-up processes such as carbon nanotube production. We are exploring frontier science of interactions between plasmas and nano-interfaces by focusing on novel features such as fluctuations of interactions due to the nanometer scale. Plasma processing based on the science realizes highly precise top-down processes by suppressing fluctuations and well controlled self-organized bottom-up processes by controlling fluctuations. We aim to bring about an explosive development of fabrication technologies of nanomaterials and nanostructures.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131487063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686679
T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, Hidefumi Matsuzaki, M. Shiratani
We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.
{"title":"Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD","authors":"T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, Hidefumi Matsuzaki, M. Shiratani","doi":"10.1109/TENCON.2010.5686679","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686679","url":null,"abstract":"We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126523999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686711
A. Ikeda, K. Kajiwara, N. Watanabe, T. Asano
We evaluated high frequency signal transmission characteristics of coplanar waveguides fabricated using cone bump interconnections on flip-chip bonded surfaces. The signal insertion loss (S21 parameter) increased with the number of bump interconnections. At 40 GHz, the signal insertion loss due to the bump interconnections was 0.017 dB / bump. This value was small enough for application to most radio-frequency devices. Besides, the bump interconnections did not alter the characteristic impedance of the waveguide from the designed even at 40 GHz. The results indicate that the cone bump offers high-frequency signal data transmission lines for chip-stack integration of LSIs.
我们评估了在倒装晶片粘合表面上使用锥凸互连制作的共面波导的高频信号传输特性。信号插入损耗(S21参数)随着凹凸连接次数的增加而增加。在40 GHz时，由于凹凸互连引起的信号插入损耗为0.017 dB /凹凸。这个值足够小，适用于大多数射频设备。此外，即使在40ghz时，凹凸互连也不会改变设计波导的特性阻抗。结果表明，锥突为lsi的芯片堆栈集成提供了高频信号数据传输线。
{"title":"High-frequency signal transmission characteristics of coplanar waveguides with cone bump interconnections","authors":"A. Ikeda, K. Kajiwara, N. Watanabe, T. Asano","doi":"10.1109/TENCON.2010.5686711","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686711","url":null,"abstract":"We evaluated high frequency signal transmission characteristics of coplanar waveguides fabricated using cone bump interconnections on flip-chip bonded surfaces. The signal insertion loss (S21 parameter) increased with the number of bump interconnections. At 40 GHz, the signal insertion loss due to the bump interconnections was 0.017 dB / bump. This value was small enough for application to most radio-frequency devices. Besides, the bump interconnections did not alter the characteristic impedance of the waveguide from the designed even at 40 GHz. The results indicate that the cone bump offers high-frequency signal data transmission lines for chip-stack integration of LSIs.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122625535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686632
M. Sasaki, Wahyudiono, T. Kiyan, H. Akiyama, M. Goto, Yousuke Suga, Toshiyuki Watanabe
In this work, reactions of phenol were carried out in supercritical argon (critical temperature, Tc: 150.7 K, critical pressure, Pc: 4.8 MPa) with pulsed discharge plasma to understand reaction characteristics and to evaluate possibility that this technique will be applicable for a new “green” polymerization technique of functional polymeric materials. Experiments in subcritical water or in supercritical argon were conducted through the operation of a specially-designed SUS316 batch-type reactor (inner volume: 900 mL) at 373–523 K and 1–25 MPa, or at 303–373 K and 5–15 MPa, respectively. The electrode configuration consisted of a point (negative electrode) and a planar surface (positive electrode), which were made of tungsten and stainless steel, respectively. The distance between the two electrodes was fixed at 1 mm. Two kinds of power supply devices (BPFN and MPC) were employed. As results using a BPFN, it was found that reaction behavior in subcritical water at 373–523 K, 1–25 MPa with less than 4000 times pulsed discharges basically similar to that in supercritical argon, but polymerized products of phenol could be obtained under larger pulsed discharge times like 5000 times at identical conditions. In contrast, phenol could be converted into hydroquinone but no polymerized product could be confirmed in supercritical argon. On the surface of the electrode used, it was found that phenol could be converted into amorphous graphite oxide with pulsed discharge plasma treatment in supercritical argon. This finding will be expected as a new method for the carbon-based functional materials in supercritical argon.
{"title":"Development of a new chemical synthesis method with pulsed discharge plasma in sub- and supercritical fluids","authors":"M. Sasaki, Wahyudiono, T. Kiyan, H. Akiyama, M. Goto, Yousuke Suga, Toshiyuki Watanabe","doi":"10.1109/TENCON.2010.5686632","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686632","url":null,"abstract":"In this work, reactions of phenol were carried out in supercritical argon (critical temperature, Tc: 150.7 K, critical pressure, Pc: 4.8 MPa) with pulsed discharge plasma to understand reaction characteristics and to evaluate possibility that this technique will be applicable for a new “green” polymerization technique of functional polymeric materials. Experiments in subcritical water or in supercritical argon were conducted through the operation of a specially-designed SUS316 batch-type reactor (inner volume: 900 mL) at 373–523 K and 1–25 MPa, or at 303–373 K and 5–15 MPa, respectively. The electrode configuration consisted of a point (negative electrode) and a planar surface (positive electrode), which were made of tungsten and stainless steel, respectively. The distance between the two electrodes was fixed at 1 mm. Two kinds of power supply devices (BPFN and MPC) were employed. As results using a BPFN, it was found that reaction behavior in subcritical water at 373–523 K, 1–25 MPa with less than 4000 times pulsed discharges basically similar to that in supercritical argon, but polymerized products of phenol could be obtained under larger pulsed discharge times like 5000 times at identical conditions. In contrast, phenol could be converted into hydroquinone but no polymerized product could be confirmed in supercritical argon. On the surface of the electrode used, it was found that phenol could be converted into amorphous graphite oxide with pulsed discharge plasma treatment in supercritical argon. This finding will be expected as a new method for the carbon-based functional materials in supercritical argon.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124698196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686136
Yongfeng Han, H. Kimura
This paper deals with motions obtaining of an underwater robot arm which have multi-degree of freedom by using reinforcement learning algorithms. A natural gradient Actor-Critic algorithm which uses Eligibility Traces is applied to the robot arm. In this algorithm, motion planning problems are modeled as finite state Markov decision processes. The robot arm is developed to have 4 joints, each joint consists 1 servo motor. The experiment results show the robot arm successfully learning to swim by feasible learning steps.
{"title":"Motions obtaining of multi-degree-freedom underwater robot by using reinforcement learning algorithms","authors":"Yongfeng Han, H. Kimura","doi":"10.1109/TENCON.2010.5686136","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686136","url":null,"abstract":"This paper deals with motions obtaining of an underwater robot arm which have multi-degree of freedom by using reinforcement learning algorithms. A natural gradient Actor-Critic algorithm which uses Eligibility Traces is applied to the robot arm. In this algorithm, motion planning problems are modeled as finite state Markov decision processes. The robot arm is developed to have 4 joints, each joint consists 1 servo motor. The experiment results show the robot arm successfully learning to swim by feasible learning steps.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129641903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686033
K. Inoue, K. Hara, K. Urahama
We propose a method for clipping a rectangular region from an image by minimizing a weighted intersection of two color histograms which are constructed with pixels included in the inside and the outside of the rectangular region. Furthermore, we extend the clipping method for images to that for videos. Experimental results show that the proposed method can clip the regions of objects from images and remove the regions of backgrounds.
{"title":"Image and video clipping by weighted histogram intersection minimization","authors":"K. Inoue, K. Hara, K. Urahama","doi":"10.1109/TENCON.2010.5686033","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686033","url":null,"abstract":"We propose a method for clipping a rectangular region from an image by minimizing a weighted intersection of two color histograms which are constructed with pixels included in the inside and the outside of the rectangular region. Furthermore, we extend the clipping method for images to that for videos. Experimental results show that the proposed method can clip the regions of objects from images and remove the regions of backgrounds.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123598628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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