Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686435
Y. Omori, K. Araki
Most software specifications are discussed on natural language among stakeholders. There is, however, a semantic gap between natural language and programming language, which sometime causes discrepancies between them and misunderstanding among stakeholders. Formal language compensates the gap so that realizes early verification in software development process. We developed a dictionary tool to support the translation from natural language to formal language. The tool provides functionalities those are easy registration of keywords to the dictionary and exhaustive marking of the keywords. The dictionary represents a map between equivalent keywords in natural language and formal language which gives defined semantics, and the tool enhance the coverage of the keywords in the formal specification. In short, the dictionary contains conceptual keywords and specific semantics in the problem; therefore, it corresponds to a domain of the system. A system generally belongs to multi problem domains and also contains multi sub domains, consequently some dictionaries should be dynamically alternated through the translation process. APIs related to dictionary operation are proposed and verified in this paper, and the dictionary class is introduced to map the relation among domains.
{"title":"Tool support for domain analysis of the software specification in natural language","authors":"Y. Omori, K. Araki","doi":"10.1109/TENCON.2010.5686435","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686435","url":null,"abstract":"Most software specifications are discussed on natural language among stakeholders. There is, however, a semantic gap between natural language and programming language, which sometime causes discrepancies between them and misunderstanding among stakeholders. Formal language compensates the gap so that realizes early verification in software development process. We developed a dictionary tool to support the translation from natural language to formal language. The tool provides functionalities those are easy registration of keywords to the dictionary and exhaustive marking of the keywords. The dictionary represents a map between equivalent keywords in natural language and formal language which gives defined semantics, and the tool enhance the coverage of the keywords in the formal specification. In short, the dictionary contains conceptual keywords and specific semantics in the problem; therefore, it corresponds to a domain of the system. A system generally belongs to multi problem domains and also contains multi sub domains, consequently some dictionaries should be dynamically alternated through the translation process. APIs related to dictionary operation are proposed and verified in this paper, and the dictionary class is introduced to map the relation among domains.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124784621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686386
M. Miyata, S. Yakata, M. Hara, H. Wada, T. Kimura
We have proposed a method for controlling the vortex chirality in a regular polygonal nanomagnet with an odd number of sides using an in-plane magnetic field. We confirmed the reliability of the proposed method in the triangle, pentagonal and heptagonal nanomagnets by using micromagnetic simulation. However, when the number of the sides is 9 or more, the chirality does not change systematically because of the insufficient in-plane shape anisotropy. Stabilizations of a single vortex in polygonal nanomagnets with an even number of sides have been also investigated.
{"title":"Control of vortex chirality in polygonal nanomagnets","authors":"M. Miyata, S. Yakata, M. Hara, H. Wada, T. Kimura","doi":"10.1109/TENCON.2010.5686386","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686386","url":null,"abstract":"We have proposed a method for controlling the vortex chirality in a regular polygonal nanomagnet with an odd number of sides using an in-plane magnetic field. We confirmed the reliability of the proposed method in the triangle, pentagonal and heptagonal nanomagnets by using micromagnetic simulation. However, when the number of the sides is 9 or more, the chirality does not change systematically because of the insufficient in-plane shape anisotropy. Stabilizations of a single vortex in polygonal nanomagnets with an even number of sides have been also investigated.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"14 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120903387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686679
T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, Hidefumi Matsuzaki, M. Shiratani
We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.
{"title":"Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD","authors":"T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, Hidefumi Matsuzaki, M. Shiratani","doi":"10.1109/TENCON.2010.5686679","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686679","url":null,"abstract":"We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126523999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686474
S. Kitazaki, D. Yamashita, Hidefumi Matsuzaki, G. Uchida, K. Koga, M. Shiratani, N. Hayashi
We have investigated growth stimulation of radish sprouts using nonthermal atmospheric pressure He discharge plasmas and low pressure O2 RF discharge plasmas. Seeds of radish sprouts were irradiated by one of these plasmas. After 7 days cultivation, the average length of sprouts with irradiation was 15–60 % longer than those without irradiation. Reactive oxygen species may be involved in the growth stimulation mechanism.
{"title":"Growth stimulation of radish sprouts using discharge plasmas","authors":"S. Kitazaki, D. Yamashita, Hidefumi Matsuzaki, G. Uchida, K. Koga, M. Shiratani, N. Hayashi","doi":"10.1109/TENCON.2010.5686474","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686474","url":null,"abstract":"We have investigated growth stimulation of radish sprouts using nonthermal atmospheric pressure He discharge plasmas and low pressure O2 RF discharge plasmas. Seeds of radish sprouts were irradiated by one of these plasmas. After 7 days cultivation, the average length of sprouts with irradiation was 15–60 % longer than those without irradiation. Reactive oxygen species may be involved in the growth stimulation mechanism.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129028003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686013
Kenji Yamada, T. Itokawa, T. Kitasuka, M. Aritsugi
In this paper, we try to reduce the amount of control traffic of the optimized link state routing protocol (OLSR). OLSR is a proactive routing protocol for mobile ad-hoc networks (MANETs). OLSR is known well as a low control traffic routing protocol, since it adopts multipoint relays (MPRs). MPRs concept significantly reduces the number of broadcast messages during the flooding process. Although MPR concept is optimal for each node to transmit its messages to all two hop neighbors, we show there are still redundant control messages which can be piggybacked with other control messages in dense networks. This redundancy is caused by the selection procedure of MPRs, which run on each node independently of its neighbor nodes. In this paper, we propose a cooperative MPR selection procedure, to increase messages which are piggybacked into a single control packet. Through simulation, we demonstrate that the proposed cooperative MPR selection procedure reduces the number of routing packets in high-density network, and network reachability is kept similar to that of the conventional MPR selection procedure.
{"title":"Cooperative MPR selection to reduce topology control packets in OLSR","authors":"Kenji Yamada, T. Itokawa, T. Kitasuka, M. Aritsugi","doi":"10.1109/TENCON.2010.5686013","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686013","url":null,"abstract":"In this paper, we try to reduce the amount of control traffic of the optimized link state routing protocol (OLSR). OLSR is a proactive routing protocol for mobile ad-hoc networks (MANETs). OLSR is known well as a low control traffic routing protocol, since it adopts multipoint relays (MPRs). MPRs concept significantly reduces the number of broadcast messages during the flooding process. Although MPR concept is optimal for each node to transmit its messages to all two hop neighbors, we show there are still redundant control messages which can be piggybacked with other control messages in dense networks. This redundancy is caused by the selection procedure of MPRs, which run on each node independently of its neighbor nodes. In this paper, we propose a cooperative MPR selection procedure, to increase messages which are piggybacked into a single control packet. Through simulation, we demonstrate that the proposed cooperative MPR selection procedure reduces the number of routing packets in high-density network, and network reachability is kept similar to that of the conventional MPR selection procedure.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"25 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132149059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5685920
M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki
Recent progress in nano-materials has made them attractive for an increasing number of their applications such as electronics, medical components, fillers, catalysts, and fuel cells. Nanomaterials need structures and components which exhibit novel and significantly improved physical, chemical and biological properties, because of their nanoscale size, and hence fabrication of nanomaterials by bottom-up processes as well as that by top-down ones are required. A wide variety of nano-material and nano-system fabrication methods are required to be developed to realize complex nano-world. Plasma-based fabrication of nanomaterials and nanostructures is widely employed for top-down processes such as ULSI fabrication as well as bottom-up processes such as carbon nanotube production. We are exploring frontier science of interactions between plasmas and nano-interfaces by focusing on novel features such as fluctuations of interactions due to the nanometer scale. Plasma processing based on the science realizes highly precise top-down processes by suppressing fluctuations and well controlled self-organized bottom-up processes by controlling fluctuations. We aim to bring about an explosive development of fabrication technologies of nanomaterials and nanostructures.
{"title":"Keynote speech I: Fluctuation control for plasma nanotechnologies","authors":"M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki","doi":"10.1109/TENCON.2010.5685920","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5685920","url":null,"abstract":"Recent progress in nano-materials has made them attractive for an increasing number of their applications such as electronics, medical components, fillers, catalysts, and fuel cells. Nanomaterials need structures and components which exhibit novel and significantly improved physical, chemical and biological properties, because of their nanoscale size, and hence fabrication of nanomaterials by bottom-up processes as well as that by top-down ones are required. A wide variety of nano-material and nano-system fabrication methods are required to be developed to realize complex nano-world. Plasma-based fabrication of nanomaterials and nanostructures is widely employed for top-down processes such as ULSI fabrication as well as bottom-up processes such as carbon nanotube production. We are exploring frontier science of interactions between plasmas and nano-interfaces by focusing on novel features such as fluctuations of interactions due to the nanometer scale. Plasma processing based on the science realizes highly precise top-down processes by suppressing fluctuations and well controlled self-organized bottom-up processes by controlling fluctuations. We aim to bring about an explosive development of fabrication technologies of nanomaterials and nanostructures.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131487063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686026
Chang Jian, K. Urahama
We formulate the window mode filter (WMF) which is an extension of the point-wise mode filter to windowed version. We then derive from the WMF the window-weighted bilateral filter (WWBF) which is different from the previously presented window bilateral filter (WBF). We demonstrate with experiments that the WWBF outperforms WBF for images contaminated with Gaussian noises and those with mixed Gaussian and impulsive noises. We also show that the PSNR of iterated WWBF is always larger than the iterated WBF.
{"title":"Window mode filter for image denoising","authors":"Chang Jian, K. Urahama","doi":"10.1109/TENCON.2010.5686026","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686026","url":null,"abstract":"We formulate the window mode filter (WMF) which is an extension of the point-wise mode filter to windowed version. We then derive from the WMF the window-weighted bilateral filter (WWBF) which is different from the previously presented window bilateral filter (WBF). We demonstrate with experiments that the WWBF outperforms WBF for images contaminated with Gaussian noises and those with mixed Gaussian and impulsive noises. We also show that the PSNR of iterated WWBF is always larger than the iterated WBF.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"766 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123281392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686033
K. Inoue, K. Hara, K. Urahama
We propose a method for clipping a rectangular region from an image by minimizing a weighted intersection of two color histograms which are constructed with pixels included in the inside and the outside of the rectangular region. Furthermore, we extend the clipping method for images to that for videos. Experimental results show that the proposed method can clip the regions of objects from images and remove the regions of backgrounds.
{"title":"Image and video clipping by weighted histogram intersection minimization","authors":"K. Inoue, K. Hara, K. Urahama","doi":"10.1109/TENCON.2010.5686033","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686033","url":null,"abstract":"We propose a method for clipping a rectangular region from an image by minimizing a weighted intersection of two color histograms which are constructed with pixels included in the inside and the outside of the rectangular region. Furthermore, we extend the clipping method for images to that for videos. Experimental results show that the proposed method can clip the regions of objects from images and remove the regions of backgrounds.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123598628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686711
A. Ikeda, K. Kajiwara, N. Watanabe, T. Asano
We evaluated high frequency signal transmission characteristics of coplanar waveguides fabricated using cone bump interconnections on flip-chip bonded surfaces. The signal insertion loss (S21 parameter) increased with the number of bump interconnections. At 40 GHz, the signal insertion loss due to the bump interconnections was 0.017 dB / bump. This value was small enough for application to most radio-frequency devices. Besides, the bump interconnections did not alter the characteristic impedance of the waveguide from the designed even at 40 GHz. The results indicate that the cone bump offers high-frequency signal data transmission lines for chip-stack integration of LSIs.
我们评估了在倒装晶片粘合表面上使用锥凸互连制作的共面波导的高频信号传输特性。信号插入损耗(S21参数)随着凹凸连接次数的增加而增加。在40 GHz时，由于凹凸互连引起的信号插入损耗为0.017 dB /凹凸。这个值足够小，适用于大多数射频设备。此外，即使在40ghz时，凹凸互连也不会改变设计波导的特性阻抗。结果表明，锥突为lsi的芯片堆栈集成提供了高频信号数据传输线。
{"title":"High-frequency signal transmission characteristics of coplanar waveguides with cone bump interconnections","authors":"A. Ikeda, K. Kajiwara, N. Watanabe, T. Asano","doi":"10.1109/TENCON.2010.5686711","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686711","url":null,"abstract":"We evaluated high frequency signal transmission characteristics of coplanar waveguides fabricated using cone bump interconnections on flip-chip bonded surfaces. The signal insertion loss (S21 parameter) increased with the number of bump interconnections. At 40 GHz, the signal insertion loss due to the bump interconnections was 0.017 dB / bump. This value was small enough for application to most radio-frequency devices. Besides, the bump interconnections did not alter the characteristic impedance of the waveguide from the designed even at 40 GHz. The results indicate that the cone bump offers high-frequency signal data transmission lines for chip-stack integration of LSIs.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122625535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TENCON.2010.5686122
A. Matsunaga, K. Nojima, M. Iwahashi, Y. Katayama, K. Iramina
In this study we investigated the effect of the single pulse transcranial magnetic stimulation (TMS) and repetitive TMS (rTMS) to the supramarginal gyrus (SMG) on an event related potential (ERP) which is called P300. By applying the Oddball task which gives 2 easily distinguishable types of stimuli, the P300, one of the ERP can be observed. Former studies reported that left SMG is related to the origin of P300. In Experiment 1, TMS is applied to the SMG after 150ms, 200ms, and 250ms from presentation of audio-stimuli. By comparing the P-values, the effect of the TMS applied to the left SMG was larger. In Experiment 2, rTMS (100 stimuli with 1Hz) is applied to the SMG. We measured the P300 response before and after rTMS. By comparing the latency and amplitude of P300, latency was confirmed to increase when applied to the left SMG. However, there was no difference of amplitude of P300.
{"title":"The effect of TMS to supramarginal gyrus on event-related potential P300","authors":"A. Matsunaga, K. Nojima, M. Iwahashi, Y. Katayama, K. Iramina","doi":"10.1109/TENCON.2010.5686122","DOIUrl":"https://doi.org/10.1109/TENCON.2010.5686122","url":null,"abstract":"In this study we investigated the effect of the single pulse transcranial magnetic stimulation (TMS) and repetitive TMS (rTMS) to the supramarginal gyrus (SMG) on an event related potential (ERP) which is called P300. By applying the Oddball task which gives 2 easily distinguishable types of stimuli, the P300, one of the ERP can be observed. Former studies reported that left SMG is related to the origin of P300. In Experiment 1, TMS is applied to the SMG after 150ms, 200ms, and 250ms from presentation of audio-stimuli. By comparing the P-values, the effect of the TMS applied to the left SMG was larger. In Experiment 2, rTMS (100 stimuli with 1Hz) is applied to the SMG. We measured the P300 response before and after rTMS. By comparing the latency and amplitude of P300, latency was confirmed to increase when applied to the left SMG. However, there was no difference of amplitude of P300.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121330867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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