Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341224
B. Baddipadiga, S. Strathman, M. Ferdowsi, J. Kimball
This paper introduces a high-voltage-gain dc-dc converter designed to act as a power processing unit for a multi-mode monopropellant-electrospray propulsion system used in satellites. The high-voltage-gain converter is capable of offering a voltage gain ranging from 200 to 350. This converter is made up of two stages: 1). A two-phase interleaved boost stage on the input side and 2). A Cockcroft-Walton voltage multiplier on the output side. This converter is employed to boost a 15 V battery voltage to 3400 V required for operating the thruster in electrical mode. The theoretical analysis and design procedure of the converter is discussed in detail. Hardware test results supporting the converter operation and analysis are also provided.
{"title":"A high-voltage-gain DC-DC converter for powering a multi-mode monopropellant-electrospray propulsion system in satellites","authors":"B. Baddipadiga, S. Strathman, M. Ferdowsi, J. Kimball","doi":"10.1109/APEC.2018.8341224","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341224","url":null,"abstract":"This paper introduces a high-voltage-gain dc-dc converter designed to act as a power processing unit for a multi-mode monopropellant-electrospray propulsion system used in satellites. The high-voltage-gain converter is capable of offering a voltage gain ranging from 200 to 350. This converter is made up of two stages: 1). A two-phase interleaved boost stage on the input side and 2). A Cockcroft-Walton voltage multiplier on the output side. This converter is employed to boost a 15 V battery voltage to 3400 V required for operating the thruster in electrical mode. The theoretical analysis and design procedure of the converter is discussed in detail. Hardware test results supporting the converter operation and analysis are also provided.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133126840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8340991
Dong Cao, X. Lyu, Yanchao Li, Ze Ni, Jalen Johnson, Shuai Jiang, Chenhao Nan
This paper presents an ultra-efficient composite modular power delivery architecture (COMPDA) that is able to be used for DC-DC, DC-AC, AC-DC, and AC-AC applications. The proposed architecture has very good module structure, the devices in each module have the same voltage and current stress. When it is used for high conversion ratio dc-dc applications, the device voltage stress is the same with the low voltage side, and the device current stress is the same with the low current side. Compared with the buck, flying capacitor multilevel or modular multilevel dc-dc converters, the proposed architecture has much lower total device power or current stress, which means a significant semiconductor chip area reduction. During the operation, the modules are connected in-series to sustain the high voltage and connected in-parallel to pump the high current. By properly design the resonant tank in the COMPDA, all the switching devices could achieve zero current switching or zero voltage switching. A partial power regulator could be integrated in the proposed architecture, where only a minimum amount of power needs to be processed in order to achieve the output voltage fine regulation. By properly control the operation of modules, the COMPDA can also be used as a high boost ratio DC-AC inverter or high step-down ratio AC-DC rectifier while keeping the soft-switching features, which are specially suitable for solar farm and data-center application. When apply the COMPDA to single-phase DC-AC or AC-DC applications, only a minimum amount dc-link capacitor is needed since the needs of energy storage is minimized, and there is no high voltage dc-link requirement anymore. In order to show the benefits of the COMPDA, one special unregulated case derived from the proposed architecture has been used for 48 V–8 V DC-DC data center application, which is also named switched-tank converter. Finally, a GaN based prototype is built and tested to verify the theoretical analysis. The proposed converter can achieve the peak efficiency at 98.55% under switching frequency 253 kHz and power density is ∼750W/inch3.
本文介绍了一种超高效的复合模块化电源传输架构(COMPDA)，可用于DC-DC、DC-AC、AC-DC和AC-AC应用。所提出的架构具有非常好的模块结构，每个模块中的器件具有相同的电压和电流应力。当用于高转换比的dc-dc应用时，器件电压应力与低压侧相同，器件电流应力与低电流侧相同。与降压型、飞电容型或模块化型多电平dc-dc变换器相比，所提出的结构具有更低的器件总功率或电流应力，这意味着半导体芯片面积显著减少。在运行过程中，模块串联以维持高压，并联以泵送大电流。通过合理设计COMPDA中的谐振槽，所有开关器件都可以实现零电流开关或零电压开关。在所提出的架构中可以集成部分功率调节器，其中只需要处理最少量的功率就可以实现输出电压的精细调节。通过适当控制各模块的工作，该COMPDA还可以用作高升压比的直流逆变器或高降压比的交流整流器，同时保持软开关特性，特别适用于太阳能发电场和数据中心应用。当COMPDA应用于单相DC-AC或AC-DC应用时，由于储能需求最小化，只需要最少量的直流电容，并且不再需要高压直流链路。为了展示COMPDA的优势，我们在48 V - 8 V DC-DC数据中心应用中采用了一种特殊的非调节电路，也称为开关箱转换器。最后，建立了基于GaN的原型并进行了测试以验证理论分析。在开关频率253 kHz和功率密度约750W/inch3下，该转换器的峰值效率可达98.55%。
{"title":"An ultra efficient composite modular power delivery architecture for solar farm and data center","authors":"Dong Cao, X. Lyu, Yanchao Li, Ze Ni, Jalen Johnson, Shuai Jiang, Chenhao Nan","doi":"10.1109/APEC.2018.8340991","DOIUrl":"https://doi.org/10.1109/APEC.2018.8340991","url":null,"abstract":"This paper presents an ultra-efficient composite modular power delivery architecture (COMPDA) that is able to be used for DC-DC, DC-AC, AC-DC, and AC-AC applications. The proposed architecture has very good module structure, the devices in each module have the same voltage and current stress. When it is used for high conversion ratio dc-dc applications, the device voltage stress is the same with the low voltage side, and the device current stress is the same with the low current side. Compared with the buck, flying capacitor multilevel or modular multilevel dc-dc converters, the proposed architecture has much lower total device power or current stress, which means a significant semiconductor chip area reduction. During the operation, the modules are connected in-series to sustain the high voltage and connected in-parallel to pump the high current. By properly design the resonant tank in the COMPDA, all the switching devices could achieve zero current switching or zero voltage switching. A partial power regulator could be integrated in the proposed architecture, where only a minimum amount of power needs to be processed in order to achieve the output voltage fine regulation. By properly control the operation of modules, the COMPDA can also be used as a high boost ratio DC-AC inverter or high step-down ratio AC-DC rectifier while keeping the soft-switching features, which are specially suitable for solar farm and data-center application. When apply the COMPDA to single-phase DC-AC or AC-DC applications, only a minimum amount dc-link capacitor is needed since the needs of energy storage is minimized, and there is no high voltage dc-link requirement anymore. In order to show the benefits of the COMPDA, one special unregulated case derived from the proposed architecture has been used for 48 V–8 V DC-DC data center application, which is also named switched-tank converter. Finally, a GaN based prototype is built and tested to verify the theoretical analysis. The proposed converter can achieve the peak efficiency at 98.55% under switching frequency 253 kHz and power density is ∼750W/inch3.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131597584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341001
Qianlai Zhu, Li Wang, Liqi Zhang, A. Huang
In this paper, a two level 10 kV DC transformer (DCX) based on 15 kV SiC MOSFETs is presented for medium voltage application. Current fed series resonant converter is proposed as the main circuit for two purposes: 1) realize ZVS on MV MOSFETs and ZCS on LV MOSFETs across entire load range. 2) minimize total required system capacitance, allowing film capacitors to replace electrolytic capacitors for longer lifetime performance. 15 kV device is utilized to reach its full voltage, frequency and power potential of 10 kV, 100 kHz and 30 kW, respectively. Inherent cycle by cycle over load current limiting capability is achieved by paralleling diodes on LV resonant capacitors. The operation principle under normal load and short circuit conditions, as well as ZVS design are provided in this paper. An all film capacitor 20 kW DC-DC prototype that converts 10 kV to 340 V is built to verify the theoretical analysis, which achieves operation frequency of 37 kHz and peak efficiency over 98%. 10 kV constant operation is the highest reported voltage for a two-level structure based converter without devices in series. Short circuit is conducted at 3 kV with a peak current limited within 11 A, with expect peak current within in 35 A at 10 kV short circuit condition.
本文提出了一种基于15kv SiC mosfet的两级10kv直流变压器(DCX)，用于中压应用。电流馈电串联谐振变换器作为主电路有两个目的:1)在整个负载范围内实现中压mosfet的ZVS和低压mosfet的ZCS。2)最大限度地减少所需的总系统电容，使薄膜电容器取代电解电容器，获得更长的使用寿命。利用15kv装置分别达到10kv、100khz和30kw的全电压、全频率和全功率势。通过在低压谐振电容上并联二极管，实现了固有的逐周过载限流能力。本文给出了正常负载和短路工况下的工作原理，以及零电压开关的设计。为验证理论分析，构建了一个转换10 kV到340 V的20 kW全膜电容器DC-DC样机，实现了37 kHz的工作频率和98%以上的峰值效率。10kv恒定工作电压是无串联器件的双电平结构变换器报道的最高电压。在3kv短路时，峰值电流限制在11a以内，在10kv短路时，预计峰值电流在35a以内。
{"title":"A 10 kV DC transformer (DCX) based on current fed SRC and 15 kV SiC MOSFETs","authors":"Qianlai Zhu, Li Wang, Liqi Zhang, A. Huang","doi":"10.1109/APEC.2018.8341001","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341001","url":null,"abstract":"In this paper, a two level 10 kV DC transformer (DCX) based on 15 kV SiC MOSFETs is presented for medium voltage application. Current fed series resonant converter is proposed as the main circuit for two purposes: 1) realize ZVS on MV MOSFETs and ZCS on LV MOSFETs across entire load range. 2) minimize total required system capacitance, allowing film capacitors to replace electrolytic capacitors for longer lifetime performance. 15 kV device is utilized to reach its full voltage, frequency and power potential of 10 kV, 100 kHz and 30 kW, respectively. Inherent cycle by cycle over load current limiting capability is achieved by paralleling diodes on LV resonant capacitors. The operation principle under normal load and short circuit conditions, as well as ZVS design are provided in this paper. An all film capacitor 20 kW DC-DC prototype that converts 10 kV to 340 V is built to verify the theoretical analysis, which achieves operation frequency of 37 kHz and peak efficiency over 98%. 10 kV constant operation is the highest reported voltage for a two-level structure based converter without devices in series. Short circuit is conducted at 3 kV with a peak current limited within 11 A, with expect peak current within in 35 A at 10 kV short circuit condition.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131291222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341567
Namwon Kim, Mehrdad Biglarbegian, B. Parkhideh
Integration of energy storage with a grid-tied photovoltaic (PV) generation system in conventional residential and commercial applications uses legacy PV power electronics topologies. This paper presents a novel solar PV power electronics system which allows a seamless integration of energy storage with partial power processing technique. In the proposed topology, a dual active bridge DC-DC converter is applied to configure partially-rated power electronics system with bi-directional power flow, galvanic isolation, a high voltage boosting gain, and results in high conversion efficiency. The proposed topology is explained in detail and analyzed with the quantitative approach to verify the improvement of system efficiency and power density in the DC-DC power conversion unit: 99.5% efficiency and 3.3kW rated power for 7.5kW PV and 2.5kW battery system. Also, the steady-state operation of the proposed universal optimizer is verified through the controller hardware-in-the-loop test.
{"title":"Flexible high efficiency battery-ready PV inverter for rooftop systems","authors":"Namwon Kim, Mehrdad Biglarbegian, B. Parkhideh","doi":"10.1109/APEC.2018.8341567","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341567","url":null,"abstract":"Integration of energy storage with a grid-tied photovoltaic (PV) generation system in conventional residential and commercial applications uses legacy PV power electronics topologies. This paper presents a novel solar PV power electronics system which allows a seamless integration of energy storage with partial power processing technique. In the proposed topology, a dual active bridge DC-DC converter is applied to configure partially-rated power electronics system with bi-directional power flow, galvanic isolation, a high voltage boosting gain, and results in high conversion efficiency. The proposed topology is explained in detail and analyzed with the quantitative approach to verify the improvement of system efficiency and power density in the DC-DC power conversion unit: 99.5% efficiency and 3.3kW rated power for 7.5kW PV and 2.5kW battery system. Also, the steady-state operation of the proposed universal optimizer is verified through the controller hardware-in-the-loop test.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"199 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122343516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341372
G. Knabben, D. Neumayr, J. Kolar
Despite the increasing performance of power semi-conductors and passives components, limited timing resolution in off-the-shelf available digital control hardware often prevents the switching frequency in kW-scale dc/ac power conversion to be increased above several MHz for the sake of extreme power densities. In this paper an alternative approach to generate a sinusoidal output voltage, based on constant duty cycle frequency shift control of a high frequency resonant inverter stage and a subsequent synchronous cycloconverter, is analyzed. The design of the presented converter is facilitated by means of a derived mathematical model. A novel closed-loop control system is proposed which achieves tight regulation of the output voltage by means of controlling the switching frequencies of the involved bridge legs operated in resonant mode. Characteristic waveforms of the dc/ac converter during steady-state and load transients are presented. Two distinct implementations of the resonant inverter stage, constituting an intermediate voltage or intermediate current link, are analysed and compared.
{"title":"Constant duty cycle sinusoidal output inverter with sine amplitude modulated high frequency link","authors":"G. Knabben, D. Neumayr, J. Kolar","doi":"10.1109/APEC.2018.8341372","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341372","url":null,"abstract":"Despite the increasing performance of power semi-conductors and passives components, limited timing resolution in off-the-shelf available digital control hardware often prevents the switching frequency in kW-scale dc/ac power conversion to be increased above several MHz for the sake of extreme power densities. In this paper an alternative approach to generate a sinusoidal output voltage, based on constant duty cycle frequency shift control of a high frequency resonant inverter stage and a subsequent synchronous cycloconverter, is analyzed. The design of the presented converter is facilitated by means of a derived mathematical model. A novel closed-loop control system is proposed which achieves tight regulation of the output voltage by means of controlling the switching frequencies of the involved bridge legs operated in resonant mode. Characteristic waveforms of the dc/ac converter during steady-state and load transients are presented. Two distinct implementations of the resonant inverter stage, constituting an intermediate voltage or intermediate current link, are analysed and compared.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129146672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341117
Juncheng Lu, Ruoyu Hou, Di Chen
Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) exhibit superior performance versus Si devices in both hard-switching and soft-switching converters. Due to the relatively higher switching-on loss compared with switching-off loss, zero voltage switching (ZVS) turn-on is still preferred to the application scope which efficiency is the primary design target. In this paper, the characteristics of GaN HEMTs under ZVS conditions is modeled. The packaging considerations on circuit parasitics and thermal management for soft switching applications is also discussed. An insulated metal substrate (IMS) based half-bridge power module consisting of two high-side and two low-side 650 V/60 A GaN HEMTs in parallel is designed and experimentally evaluated. A strong correlation is shown between simulations and experiments, verifying the power module design and GaN HEMTs' loss model.
氮化镓增强型高电子迁移率晶体管(GaN e - hemt)在硬开关和软开关变换器中都表现出优于Si器件的性能。由于零电压开关(zero voltage switching, ZVS)的导通损耗相对于关断损耗相对较高，因此在以效率为主要设计目标的应用范围中，仍优先考虑零电压开关导通。本文建立了ZVS条件下GaN hemt的特性模型。讨论了软开关应用中电路寄生和热管理方面的封装考虑。设计了一种基于绝缘金属基板(IMS)的半桥功率模块，该模块由两个高侧和两个低侧650v / 60a GaN hemt并联组成。仿真结果与实验结果具有较强的相关性，验证了功率模块设计和GaN hemt的损耗模型。
{"title":"Opportunities and design considerations of GaN HEMTs in ZVS applications","authors":"Juncheng Lu, Ruoyu Hou, Di Chen","doi":"10.1109/APEC.2018.8341117","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341117","url":null,"abstract":"Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) exhibit superior performance versus Si devices in both hard-switching and soft-switching converters. Due to the relatively higher switching-on loss compared with switching-off loss, zero voltage switching (ZVS) turn-on is still preferred to the application scope which efficiency is the primary design target. In this paper, the characteristics of GaN HEMTs under ZVS conditions is modeled. The packaging considerations on circuit parasitics and thermal management for soft switching applications is also discussed. An insulated metal substrate (IMS) based half-bridge power module consisting of two high-side and two low-side 650 V/60 A GaN HEMTs in parallel is designed and experimentally evaluated. A strong correlation is shown between simulations and experiments, verifying the power module design and GaN HEMTs' loss model.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129168849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341214
M. Antivachis, D. Bortis, L. Schrittwieser, J. Kolar
Driven by the needs of the continuously growing fuel-cell industry, a promising three-phase inverter topology, the Y-inverter, is proposed, which comprises three identical buck-boost DC/DC converter modules connected to a common star point. Each module constitutes a phase-leg and can be operated in similar fashion to conventional DC/DC converters, independent of the remaining two phases. Therefore, a straightforward and simple operation is possible. In addition, the Y-inverter allows for continuous output AC voltage waveforms, eliminating the need of additional AC-side filtering. Due to the buck-boost nature of each phase leg, the AC voltages can be higher or lower than the DC input voltage. This is an essential feature for fuel-cell applications, which suffer from a wide DC input voltage range. This paper details the operating principle of the Y-inverter, outlines the control system design and verifies its functionality by means of simulation results. The Y-inverter performance in terms of efficiency η and power density ρ is briefly analyzed by means of a multi-objective optimization and a converter design is selected which is compared to a benchmark system realized with a conventional inverter solution.
{"title":"Three-phase buck-boost Y-inverter with wide DC input voltage range","authors":"M. Antivachis, D. Bortis, L. Schrittwieser, J. Kolar","doi":"10.1109/APEC.2018.8341214","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341214","url":null,"abstract":"Driven by the needs of the continuously growing fuel-cell industry, a promising three-phase inverter topology, the Y-inverter, is proposed, which comprises three identical buck-boost DC/DC converter modules connected to a common star point. Each module constitutes a phase-leg and can be operated in similar fashion to conventional DC/DC converters, independent of the remaining two phases. Therefore, a straightforward and simple operation is possible. In addition, the Y-inverter allows for continuous output AC voltage waveforms, eliminating the need of additional AC-side filtering. Due to the buck-boost nature of each phase leg, the AC voltages can be higher or lower than the DC input voltage. This is an essential feature for fuel-cell applications, which suffer from a wide DC input voltage range. This paper details the operating principle of the Y-inverter, outlines the control system design and verifies its functionality by means of simulation results. The Y-inverter performance in terms of efficiency η and power density ρ is briefly analyzed by means of a multi-objective optimization and a converter design is selected which is compared to a benchmark system realized with a conventional inverter solution.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128599533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341284
Arvind H Kadam, Rishi Menon, S. Williamson
In the industrial production stage of a drive, its control algorithm must be tested for its validity with real machine. Testing with real machine could pose some serious challenges. During the testing, if the control algorithm starts behaving unexpectedly, it may cause serious damage to the real machine or drive. Such hazardous operating conditions can be avoided by replacing a real machine with a power electronic converter based ‘Virtual Machine’ (VM) test-bench. The VM can be designed to allow the device under test (DUT) to be tested at actual power with the help of a power electronic converter test setup and the motor model. The VM controls the current drawn from the DUT to match with that of estimated by the motor model. The existing VM system comprises of AC-DC followed by DC-AC converter, increasing the number of converter stages in the system. In addition, both the converters require independent control which increases the control complexity. This multistage conversion stage can be eliminated by replacing AC-DC-AC emulator with AC-DC converter supplied by common DC bus to DUT and VM both. Taking into account, this paper proposes a novel single-stage, three-phase bi-directional AC-DC converter topology suitable for VM system.
{"title":"A novel bidirectional three-phase AC-DC/DC-AC converter for PMSM virtual machine system with common DC bus","authors":"Arvind H Kadam, Rishi Menon, S. Williamson","doi":"10.1109/APEC.2018.8341284","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341284","url":null,"abstract":"In the industrial production stage of a drive, its control algorithm must be tested for its validity with real machine. Testing with real machine could pose some serious challenges. During the testing, if the control algorithm starts behaving unexpectedly, it may cause serious damage to the real machine or drive. Such hazardous operating conditions can be avoided by replacing a real machine with a power electronic converter based ‘Virtual Machine’ (VM) test-bench. The VM can be designed to allow the device under test (DUT) to be tested at actual power with the help of a power electronic converter test setup and the motor model. The VM controls the current drawn from the DUT to match with that of estimated by the motor model. The existing VM system comprises of AC-DC followed by DC-AC converter, increasing the number of converter stages in the system. In addition, both the converters require independent control which increases the control complexity. This multistage conversion stage can be eliminated by replacing AC-DC-AC emulator with AC-DC converter supplied by common DC bus to DUT and VM both. Taking into account, this paper proposes a novel single-stage, three-phase bi-directional AC-DC converter topology suitable for VM system.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114611110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341124
Ruoyu Hou, Juncheng Lu, Di Chen
Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve relatively high-efficiency and high-frequency in hard-switching mode. One particular reason is that GaN E-HEMTs obtain zero reverse-recovery loss and also a zero reverse-recovery period. For silicon (Si) MOSFETs, it has been a well-known issue that their Qrr is too big to switch the transistor in hard-switching mode. Researchers have made extensive efforts to calculate the reverse-recovery loss. However, few of them pay attention to the Qoss, as the Qrr dominates in the turn-on switching loss for Si MOSFETs. For GaN HEMTs, the absence of the Qrr makes the Qoss noticeable, although the value of the Qoss for GaN HEMTs is still the smallest among both Si and Silicon Carbide (SiC) MOSFETs. This paper focus on the Eqoss loss in GaN HEMTs. The Eqoss loss mechanism, detailed calculation and detailed measurement method for GaN HEMTs are provided. In addition, the theoretical results are verified by the double-pulse test at different junction temperatures and gate resistances.
{"title":"Parasitic capacitance Eqoss loss mechanism, calculation, and measurement in hard-switching for GaN HEMTs","authors":"Ruoyu Hou, Juncheng Lu, Di Chen","doi":"10.1109/APEC.2018.8341124","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341124","url":null,"abstract":"Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve relatively high-efficiency and high-frequency in hard-switching mode. One particular reason is that GaN E-HEMTs obtain zero reverse-recovery loss and also a zero reverse-recovery period. For silicon (Si) MOSFETs, it has been a well-known issue that their Qrr is too big to switch the transistor in hard-switching mode. Researchers have made extensive efforts to calculate the reverse-recovery loss. However, few of them pay attention to the Qoss, as the Qrr dominates in the turn-on switching loss for Si MOSFETs. For GaN HEMTs, the absence of the Qrr makes the Qoss noticeable, although the value of the Qoss for GaN HEMTs is still the smallest among both Si and Silicon Carbide (SiC) MOSFETs. This paper focus on the Eqoss loss in GaN HEMTs. The Eqoss loss mechanism, detailed calculation and detailed measurement method for GaN HEMTs are provided. In addition, the theoretical results are verified by the double-pulse test at different junction temperatures and gate resistances.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124738738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-03-04DOI: 10.1109/APEC.2018.8341023
J. Müting, Nick Schneider, T. Ziemann, R. Stark, U. Grossner
In order to investigate the performance of SiC power MOSFETs and especially their applicability for parallelization, ten samples of Cree's C2M0080120D MOSFET are investigated in terms of their electrical and thermal behavior. A significant spread of on-state resistance and threshold voltage is observed, where the maximum differences are ΔI ≈ 10 mΩ, i.e. 12.5 % at a current of 20 A, and ΔVth ≈ 1 V, respectively. The parallelization of these devices is analyzed by developing a numerically efficient and semi-physical Spice model for the given MOSFET. Circuit simulations of ten paralleled devices show a maximum imbalance in current of 13 % and a maximum imbalance in junction to case temperature of around 11 % between the devices. The turn-on losses increase by 2 % while the turn-off losses remain unchanged compared to ten parallel devices with similar, averaged on-resistance. Applying these ten parallel MOSFETs with different characteristics to a 50 kW bi-directional DC/DC converter in boost mode increases the losses by 46 W in comparison to ten identical MOSFETs with averaged characteristics.
{"title":"Exploring the behavior of parallel connected SiC power MOSFETs influenced by performance spread in circuit simulations","authors":"J. Müting, Nick Schneider, T. Ziemann, R. Stark, U. Grossner","doi":"10.1109/APEC.2018.8341023","DOIUrl":"https://doi.org/10.1109/APEC.2018.8341023","url":null,"abstract":"In order to investigate the performance of SiC power MOSFETs and especially their applicability for parallelization, ten samples of Cree's C2M0080120D MOSFET are investigated in terms of their electrical and thermal behavior. A significant spread of on-state resistance and threshold voltage is observed, where the maximum differences are ΔI ≈ 10 mΩ, i.e. 12.5 % at a current of 20 A, and ΔVth ≈ 1 V, respectively. The parallelization of these devices is analyzed by developing a numerically efficient and semi-physical Spice model for the given MOSFET. Circuit simulations of ten paralleled devices show a maximum imbalance in current of 13 % and a maximum imbalance in junction to case temperature of around 11 % between the devices. The turn-on losses increase by 2 % while the turn-off losses remain unchanged compared to ten parallel devices with similar, averaged on-resistance. Applying these ten parallel MOSFETs with different characteristics to a 50 kW bi-directional DC/DC converter in boost mode increases the losses by 46 W in comparison to ten identical MOSFETs with averaged characteristics.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"360 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126695546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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