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HfSiON High-k Layer Compatibility Study with TetraMethyl Ammonium Hydroxide (TMAH) Solution HfSiON与四甲基氢氧化铵(TMAH)溶液的高k层相容性研究
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.008205ESL
T. Yang, Chao Zhao, Gaobo Xu, Q. Xu, J. Li, W. W. Wang, J. Yan, H. Zhu, D. P. Chen
Compatibility of HfSiON high-k layer with wet etching using TMAH solution is studied for polycrystalline silicon dummy gate removal in high-k first gate-last process. The electrical and physical characterizations of the HfSiON layers after etching reveal that the HfSiON layer will be etched when exposed to the TMAH solution under certain conditions. No clear degradation, however, has been found after etching in a 10 vol% TMAH solution below 60◦C, suggesting a processing window for polycrystalline silicon dummy gate removal in the high-k first metal gate last process. © 2012 The Electrochemical Society. [DOI: 10.1149/2.008205esl] All rights reserved.
研究了HfSiON高k层与TMAH溶液湿法蚀刻的相容性，用于高k先栅后栅工艺中多晶硅假栅的去除。刻蚀后HfSiON层的电学和物理特性表明，在一定条件下，暴露在TMAH溶液中，HfSiON层将被刻蚀。然而，在低于60◦C的10 vol% TMAH溶液中蚀刻后，没有发现明显的降解，这表明在高k第一金属栅极最后工艺中多晶硅假栅去除的加工窗口。©2012电化学学会。[DOI: 10.1149/2.008205esl]版权所有
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引用次数: 3
Sensitizing Eu3+ with Ce3+ and Tb3+ to Make Narrow-Line Red Phosphors for Light Emitting Diodes 用Ce3+和Tb3+敏化Eu3+制备发光二极管用窄线红色荧光粉
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.022206ESL
A. Setlur
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引用次数: 61
Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor 原子层沉积制备的HfO2薄膜与NH3蒸气后氮化InP衬底之间的界面反应
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.008204ESL
Y. Kang, C. Kim, M. Cho, C. An, Hyunyub Kim, J. Seo, C. S. Kim, T. Lee, D. Ko
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引用次数: 6
Improvement of Heat Resistance of Hydrogen Doped ZnO:Ga Thin Films 氢掺杂ZnO:Ga薄膜耐热性能的提高
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.021204ESL
Cheng-chung Lee, Meng-Chi Li, Weihan Sun, C. Kuo
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引用次数: 3
Influence of SiO2 Layer on the Dielectric Function of Gold Nanoparticles on Si Substrate SiO2层对Si衬底上金纳米颗粒介电功能的影响
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.021201ESL
S. Zhu, Tupei Chen, Y. Liu, Yingli Liu, S. Yu
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引用次数: 3
Electrophoresis Deposition of TiO2 Nanoparticles on Etched Aluminum Foil for Enhanced Specific Capacitance 在蚀刻铝箔上电泳沉积TiO2纳米粒子以增强比电容
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.013201ESL
Lan Sun, Junfu Bu, Wenxi Guo, Yingying Wang, Mengye Wang, Changjian Lin
2011, Volume 15, Issue 1, Pages E1-E3. Electrochem. Solid-State Lett. Lan Sun, Junfu Bu, Wenxi Guo, Yingying Wang, Mengye Wang and Changjian Lin Etched Aluminum Foil for Enhanced Specific Capacitance Nanoparticles on 2 Electrophoresis Deposition of TiO service Email alerting click here in the box at the top right corner of the article or Receive free email alerts when new articles cite this article sign up
2011，第15卷，第1期，E1-E3页。Electrochem。固态。孙兰，卜俊富，郭文曦，王莹莹，王梦烨，林长建蚀刻铝箔纳米粒子增强比电容在2电泳沉积tio2上的应用电子邮件提醒点击文章右上角方框中的这里或当有新文章引用本文时免费接收电子邮件提醒
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引用次数: 14
High Ionic Conductivity Lithium Garnet Oxides of Li7−xLa3Zr2−xTaxO12 Compositions Li7−xLa3Zr2−xTaxO12组合物的高离子电导率锂石榴石氧化物
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.024205ESL
Yuxing Wang, Wei Lai
Lithium garnet oxides of the composition series Li7−xLa3Zr2−xTaxO12 (x = 0−2) were synthesized by the solid state reaction and characterized by the powder X-ray diffraction and the impedance spectroscopy. Single cubic phases were obtained between x = 0.2 and 2, while the end-member Li7La3Zr2O12 exhibited a tetragonal phase. The lattice parameters of the cubic series followed the Vegard’s law. The maximum bulk (9.6 × 10−4 S/cm) and total (6.9 × 10−4 S/cm) conductivities were achieved at x = 0.3 and x = 0.2, respectively at room temperature. Electrochemical tests with a hybrid solid|liquid electrolyte configuration were performed to evaluate the electrochemical performance of the solid electrolytes. © 2012 The Electrochemical Society. [DOI: 10.1149/2.024205esl] All rights reserved.
采用固相反应合成了Li7−xLa3Zr2−xTaxO12 (x = 0−2)系列石榴石锂氧化物，并用粉末x射线衍射和阻抗谱对其进行了表征。在x = 0.2 ~ 2之间得到了单立方相，而端元Li7La3Zr2O12则呈现出四方相。三次级数的晶格参数遵循维加德定律。在室温下，当x = 0.3和x = 0.2时获得最大体积(9.6 × 10−4 S/cm)和总电导率(6.9 × 10−4 S/cm)。采用固体|混合电解质结构进行电化学试验，评价固体电解质的电化学性能。©2012电化学学会。[DOI: 10.1149/2.024205]版权所有。
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引用次数: 126
Nanodiamonds Embedded in P3HT:PCBM for Enhancing Efficiency and Reliability of Hybrid Photovoltaics 纳米金刚石嵌入P3HT:PCBM以提高混合光电的效率和可靠性
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.006204ESL
Y. Hsiao, T. Fang, L. Ji, Yu-Chao Lee, B. Dai
{"title":"Nanodiamonds Embedded in P3HT:PCBM for Enhancing Efficiency and Reliability of Hybrid Photovoltaics","authors":"Y. Hsiao, T. Fang, L. Ji, Yu-Chao Lee, B. Dai","doi":"10.1149/2.006204ESL","DOIUrl":"https://doi.org/10.1149/2.006204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89286899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods/ZnO:As-Film Structure ZnO-纳米棒/ZnO: as膜结构的同结发光二极管的制备
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.020205ESL
Jingchang Sun, J. Bian, Yan Wang, Yuxin Wang, Yu Gong, Yang Li, Kuichao Liu, Sailu Zhang, Yuanda Liu, H. Liang, G. Du, N. Yu
{"title":"Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods/ZnO:As-Film Structure","authors":"Jingchang Sun, J. Bian, Yan Wang, Yuxin Wang, Yu Gong, Yang Li, Kuichao Liu, Sailu Zhang, Yuanda Liu, H. Liang, G. Du, N. Yu","doi":"10.1149/2.020205ESL","DOIUrl":"https://doi.org/10.1149/2.020205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90342681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks HfO2/Ti1-xNx栅极堆n- mosfet栅极感应漏极电流的热载子效应
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.001206ESL
Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang
{"title":"Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks","authors":"Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang","doi":"10.1149/2.001206ESL","DOIUrl":"https://doi.org/10.1149/2.001206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90566610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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