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Electric Field Accelerating Interface Diffusion in Cu/Ru/TaN/Si Stacks during Annealing 退火过程中电场加速Cu/Ru/TaN/Si堆叠界面扩散
Pub Date : 2012-01-01 DOI: 10.1149/2.023206ESL
L. Wang, Z. Cao, J. Syed, K. Hu, Q. She, X. Meng
Interface diffusion in Cu/Ru/TaN/Si stacks was investigated at different temperatures with and without electric field. It was found that electric field annealing accelerated the interface diffusion of Cu/Ru/TaN/Si. The accelerated interface diffusion is attributed to the accelerated mobility of vacancies and atoms by external electric field. A stronger accelerating effect was found on Ru/TaN interface, which resulted from accelerated N atom diffusion and the polarization of vacancies in TaN layer. © 2012 The Electrochemical Society. [DOI: 10.1149/2.023206esl] All rights reserved.
研究了Cu/Ru/TaN/Si叠层在不同温度下的界面扩散。发现电场退火加速了Cu/Ru/TaN/Si的界面扩散。界面扩散的加速是由于外加电场加速了空位和原子的迁移。在Ru/TaN界面上发现了更强的加速效应,这是由于N原子的加速扩散和TaN层中空位的极化所致。©2012电化学学会。[DOI: 10.1149/2.023206]版权所有。
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引用次数: 13
Cu Contamination of the nMOSFET in a 3-D Integrated Circuit under Thermal and Electrical Stress 热应力和电应力下三维集成电路中nMOSFET的Cu污染
Pub Date : 2012-01-01 DOI: 10.1149/2.018205ESL
Han-Wool Yeon, Sung-Yup Jung, Jung-ryul Lim, J. Pyun, Hyungwook Kim, Dohyun Baek, Young‐Chang Joo
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引用次数: 5
One-Step Infiltration of Mixed Conducting Electrocatalysts for Reducing Cathode Polarization of a Commercial Cathode-Supported SOFC 混合导电电催化剂一步渗透降低商用阴极负载SOFC阴极极化
Pub Date : 2012-01-01 DOI: 10.1149/2.007201ESL
Nansheng Xu, Xue Li, Xuan Zhao, Hailei Zhao, Kevin Huang
Infiltrating fine-grained electrocatalyst particles of either ion conducting or mixed electron and ion conducting (MEIC) material into a ceramic porous electrode scaffold has proven a very effective way to improve electrode performance for low to intermediate temperature solid oxide fuel cells (SOFCs). We report here one-step infiltration of MEIC fine particles, La0.6Sr0.4CoO3-δ (LSCo) and SrCo0.8Fe0.2O3-δ (SCF), into a commercial cathode substrate. A comparative study shows that the cathode polarization can be considerably reduced by a factor of 17 to 28 and 28 to 49 from 1000 to 700 ◦ C by the infiltrated LSCF and SCF electrocatalysts, respectively, demonstrating an effective solution to improve the electrode performance without altering mechanical properties of the electrode substrate.
将离子导电或混合电子离子导电(MEIC)材料的细颗粒电催化剂颗粒渗透到陶瓷多孔电极支架中,已被证明是提高中低温固体氧化物燃料电池(sofc)电极性能的一种非常有效的方法。我们在这里报道了MEIC细颗粒La0.6Sr0.4CoO3-δ (LSCo)和SrCo0.8Fe0.2O3-δ (SCF)一步渗透到商业阴极衬底中。对比研究表明,在1000 ~ 700℃范围内,渗透LSCF和SCF电催化剂可将阴极极化率分别降低17 ~ 28倍和28 ~ 49倍,证明了在不改变电极衬底机械性能的情况下提高电极性能的有效解决方案。
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引用次数: 9
Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material TiN材料掺杂剂活化及热稳定性的低温微波退火工艺
Pub Date : 2012-01-01 DOI: 10.1149/2.013206ESL
B. Tsai, C. Lai, Bouen Lee, C. Luo, Yao-Jen Lee
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引用次数: 0
Influence of Electrolytes and Membranes on Cell Operation for Syn-Gas Production 电解液和膜对合成气生产电池运行的影响
Pub Date : 2012-01-01 DOI: 10.1149/2.010204ESL
Eric J. Dufek, T. Lister, M. Mcilwain
The impact of membrane type and electrolyte composition for the electrochemical generation of synthesis gas (CO + H2) using a Ag gas diffusion electrode are presented. Changing from a cation exchange membrane to an anion exchange membrane (AEM) extended the cell operational time at low Ecell values (up to 4x) without impacting product composition. The use of KOH as the catholyte decreased the Ecell and resulted in a minimum electrolyte cost reduction of 39%. The prime factor in determining operational time at low Ecell values was the ability to maintain a sufficiently high anolyte pH.
介绍了膜类型和电解质组成对Ag气体扩散电极电化学生成合成气(CO + H2)的影响。从阳离子交换膜到阴离子交换膜(AEM)的变化延长了电池在低Ecell值(高达4倍)下的工作时间,而不影响产品成分。使用KOH作为阴极电解质降低了Ecell,使电解质成本降低了39%。在低Ecell值下决定操作时间的主要因素是维持足够高的阳极液pH值的能力。
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引用次数: 43
Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition 原子层沉积法提高铝掺杂HfO2薄膜的阻性开关稳定性
Pub Date : 2012-01-01 DOI: 10.1149/2.011204ESL
Ching-Shiang Peng, W. Chang, Yi-Hsuan Lee, M. Lin, Frederick T. Chen, M. Tsai
This study investigates an optimized uniformity of Al-doped HfO2 resistive random access memory (RRAM) device. The Al-doped HfO2 RRAM devices in this study exhibit excellent uniformity and stable resistive switching behavior. This is due to the formation of Hf-O-Al bonding to reduce the oxygen vacancy formation energy. An Arrhenius plot shows that the difference in activation energy caused by doping effects can be attributed to a Fermi level shift, which in turn decreases the resistance of the high resistance state. The temperature-dependent retention test makes it possible to predict the data storage capability of the Al-doped HfO2 resistive RRAM device. © 2012 The Electrochemical Society. [DOI: 10.1149/2.011204esl] All rights reserved.
本文研究了一种优化的掺铝HfO2电阻随机存取存储器(RRAM)器件的均匀性。本研究制备的掺铝HfO2 RRAM器件具有优异的均匀性和稳定的电阻开关性能。这是由于Hf-O-Al键的形成降低了氧空位的形成能。Arrhenius图表明,掺杂效应引起的活化能差异可归因于费米能级位移,这反过来又降低了高阻态的电阻。温度相关保留测试使得预测掺铝HfO2电阻式RRAM器件的数据存储能力成为可能。©2012电化学学会。[DOI: 10.1149/2.011204]版权所有。
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引用次数: 47
Hysteresis of In Situ CCVD Grown Graphene Transistors 原位CCVD生长石墨烯晶体管的磁滞特性
Pub Date : 2012-01-01 DOI: 10.1149/2.019204ESL
P. Wessely, Frank Wessely, Emrah Birinci, Bernadette Riedinger, U. Schwalke
In this paper we report on a novel method to fabricate graphene transistors directly on oxidized silicon wafers without the need to transfer graphene. By means of catalytic chemical vapor deposition (CCVD) the in situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene field-effect transistors (BiLGFETs) are realized directly on oxidized silicon substrate. In situ CCVD grown BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1 × 10 7 . With this novel fabrication method hundreds of large scale in situ CCVD grown graphene FETs are realized simultaneously on one 2’’ wafer in a silicon CMOS compatible process.
本文报道了一种在氧化硅片上直接制备石墨烯晶体管而无需转移石墨烯的新方法。采用催化化学气相沉积(CCVD)的方法,在氧化硅衬底上直接制备了原位生长单层石墨烯场效应晶体管(molgfet)和双层石墨烯场效应晶体管(bilgfet)。原位CCVD生长的bilgfet具有单极p型器件特性,具有极高的通断电流比,最高可达1 × 10.7。利用这种新颖的制造方法,在硅CMOS兼容工艺中,在一块2英寸晶圆上同时实现了数百个大规模原位CCVD生长的石墨烯场效应管。
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引用次数: 13
Electrodes for Solid Oxide Fuel Cells Based on Infiltration of Co-Based Materials 基于co基材料渗透的固体氧化物燃料电池电极
Pub Date : 2012-01-01 DOI: 10.1149/2.020204ESL
A. Samson, M. Søgaard, N. Bonanos
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引用次数: 24
Thermal Evolution of Band Edge States in ZnO Film as a Function of Annealing Ambient Atmosphere ZnO薄膜带边态随退火环境气氛的热演化
Pub Date : 2012-01-01 DOI: 10.1149/2.005205ESL
Hyun Woo Park, Jin-seong Park, J. Lee, K. Chung
RF-sputtered ZnO films were annealed under various annealing ambient atmospheres, including a vacuum, air, and water vapor. The physical and electrical properties of ZnO films annealed in various ambient atmospheres, were studied as a function of annealing temperature. The carrier concentration was dramatically increased, and the mobility was decreased when the films were annealed in a vacuum or water vapor. Even though the annealing ambient atmosphere and temperature were different, the preferred orientation and crystallization of the annealed ZnO films are maintained. However, two distinct band edge states below the conduction band, observed by spectroscopic ellipsometry measurement, undergo a thermal change as a function of annealing ambient atmosphere and these changes are correlated to changes in carrier concentration and mobility.
rf溅射ZnO薄膜在不同的退火环境下进行了退火,包括真空、空气和水蒸气。研究了ZnO薄膜在不同气氛下退火后的物理和电学性能与退火温度的关系。在真空或水蒸气中退火时,载流子浓度急剧增加,迁移率降低。尽管退火环境气氛和温度不同,但退火后ZnO薄膜的择优取向和结晶都保持不变。然而,通过椭偏光谱测量,观察到导电带以下的两个不同的能带边缘状态,作为退火环境气氛的函数发生了热变化,这些变化与载流子浓度和迁移率的变化有关。
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引用次数: 33
Highly Transparent p-Type ZnO Thin Films Prepared by Non-Toxic Sol-Gel Process 无毒溶胶-凝胶法制备高透明p型ZnO薄膜
Pub Date : 2012-01-01 DOI: 10.1149/2.025206ESL
C. Chuang, Wenjun Wang, Chung-Yen Wang, W. Tseng, Chih‐I Wu
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引用次数: 6
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Electrochemical and Solid State Letters
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