首页 > 最新文献

Electrochemical and Solid State Letters最新文献

英文 中文
Codiffusion of Phosphorus and Carbon in Preamorphized Ultrashallow Junctions 磷和碳在预非晶化超浅结中的共扩散
Pub Date : 2012-01-01 DOI: 10.1149/2.017206ESL
Y. Ling, M. Huang, R. Chang, L. Pelaz
The diffusion of implanted carbon in preamorphized silicon was investigated with and without phosphorus coimplantation. Coupling effects were observed when carbon and phosphorus diffused simultaneously during junction formation. With an implantation dose of 1 × 1015 cm−2, phosphorus diffusion resulted in interstitial supersaturation, enhancing the tail diffusion of carbon. However, the diffusion of carbon was not enhanced when the implantation dose of carbon was increased to 5 × 1015 cm−2. This result indicates that high-dose carbon implantation inhibited the interstitial supersaturation that was caused by phosphorus diffusion. Accordingly, the tail diffusion of phosphorus was suppressed and box-shaped diffusion profiles were obtained in the region of high carbon concentration. © 2012 The Electrochemical Society. [DOI: 10.1149/2.017206esl] All rights reserved.
研究了在共注入磷和未共注入磷的情况下,注入碳在预非晶硅中的扩散。当碳和磷在结形成过程中同时扩散时,观察到耦合效应。当注入剂量为1 × 1015 cm−2时,磷扩散导致间质过饱和,增强了碳的尾部扩散。然而,当碳注入剂量增加到5 × 1015 cm−2时,碳的扩散并没有增强。结果表明,高剂量碳注入抑制了磷扩散引起的间质过饱和。因此,磷的尾部扩散受到抑制,在高碳浓度区域得到盒形扩散曲线。©2012电化学学会。[DOI: 10.1149/2.017206]版权所有。
{"title":"Codiffusion of Phosphorus and Carbon in Preamorphized Ultrashallow Junctions","authors":"Y. Ling, M. Huang, R. Chang, L. Pelaz","doi":"10.1149/2.017206ESL","DOIUrl":"https://doi.org/10.1149/2.017206ESL","url":null,"abstract":"The diffusion of implanted carbon in preamorphized silicon was investigated with and without phosphorus coimplantation. Coupling effects were observed when carbon and phosphorus diffused simultaneously during junction formation. With an implantation dose of 1 × 1015 cm−2, phosphorus diffusion resulted in interstitial supersaturation, enhancing the tail diffusion of carbon. However, the diffusion of carbon was not enhanced when the implantation dose of carbon was increased to 5 × 1015 cm−2. This result indicates that high-dose carbon implantation inhibited the interstitial supersaturation that was caused by phosphorus diffusion. Accordingly, the tail diffusion of phosphorus was suppressed and box-shaped diffusion profiles were obtained in the region of high carbon concentration. © 2012 The Electrochemical Society. [DOI: 10.1149/2.017206esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73856710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs 锗锡沟道mosfet的热稳定多相镍铂stanogmanide触点
Pub Date : 2012-01-01 DOI: 10.1149/2.014206ESL
Lanxiang Wang, G. Han, S. Su, Qian Zhou, Yue Yang, P. Guo, Wei Wang, Y. Tong, P. S. Lim, B. Liu, E. Kong, C. Xue, Qiming Wang, B. Cheng, Y. Yeo
We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide [Ni(GeSn)+Ptx(GeSn)y] contacts are formed by reacting Ni-Pt alloy with Ge0.947Sn0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide [Ni(GeSn)] contacts, the Pt-incorporated contacts, i.e. [Ni(GeSn)+Ptx(GeSn)y], exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs.
我们展示了一种用于高迁移率锗锡(GeSn)沟道mosfet的新型金属双锗酰胺接触金属化工艺。采用固体源分子束外延(MBE)技术在Ge(100)衬底上外延生长的Ge0.947Sn0.053合金与Ni- pt合金反应形成多相镍-铂双锗化物[Ni(GeSn)+Ptx(GeSn)y]触点。与镍[Ni(GeSn)]触点相比,加入pt的触点(即[Ni(GeSn)+Ptx(GeSn)y])在较宽的地层温度范围内表现出更强的热稳定性,并且即使经过热处理也具有优越的表面形貌。所提出的触点对于高迁移率GeSn mosfet的集成具有吸引力。
{"title":"Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs","authors":"Lanxiang Wang, G. Han, S. Su, Qian Zhou, Yue Yang, P. Guo, Wei Wang, Y. Tong, P. S. Lim, B. Liu, E. Kong, C. Xue, Qiming Wang, B. Cheng, Y. Yeo","doi":"10.1149/2.014206ESL","DOIUrl":"https://doi.org/10.1149/2.014206ESL","url":null,"abstract":"We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide [Ni(GeSn)+Ptx(GeSn)y] contacts are formed by reacting Ni-Pt alloy with Ge0.947Sn0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide [Ni(GeSn)] contacts, the Pt-incorporated contacts, i.e. [Ni(GeSn)+Ptx(GeSn)y], exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"140 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77446241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Direct Determination of Oxide Surface Free Energy through Potentiometric Measurements 用电位法直接测定氧化物表面自由能
Pub Date : 2012-01-01 DOI: 10.1149/2.011201ESL
Kevin Croué, J. Jolivet, D. Larcher
{"title":"Direct Determination of Oxide Surface Free Energy through Potentiometric Measurements","authors":"Kevin Croué, J. Jolivet, D. Larcher","doi":"10.1149/2.011201ESL","DOIUrl":"https://doi.org/10.1149/2.011201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86334797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution 不同氢稀释度HWCVD在aic -种子层外延增厚多晶硅薄膜
Pub Date : 2012-01-01 DOI: 10.1149/2.014203ESL
J. Hwang, Li-Shang Lin, T. Hsueh, S. Hwang
A thickening polycrystalline silicon (pc-Si) layer with a grain size of 35 μm was grown on an aluminum-induced crystallization (AIC) Si film, with low and high hydrogen dilution. An AIC seed layer was grown on a glass substrate, and a pc-Si epitaxial layer was deposited on it at 450◦C by hot-wire chemical vapor deposition. The AIC seed layer exhibits a highly crystalline structure and enhances the growth of the pc-Si layer. The crystalline fraction (93%) with high hydrogen dilution was larger than that (21%) with low hydrogen dilution, owing to low activation energy for nucleation and grain growth. © 2011 The Electrochemical Society. [DOI: 10.1149/2.014203esl] All rights reserved.
在低氢稀释和高氢稀释的铝诱导结晶(AIC) Si薄膜上生长出晶粒尺寸为35 μm的增厚多晶硅(pc-Si)层。在玻璃衬底上生长AIC种子层,并在450℃下通过热线化学气相沉积在其上沉积pc-Si外延层。AIC种子层具有高度结晶的结构,促进了pc-Si层的生长。高氢稀释度的结晶分数(93%)大于低氢稀释度的结晶分数(21%),这是由于低氢稀释度的晶核和晶粒长大活化能较低。©2011电化学学会。[DOI: 10.1149/2.014203]版权所有。
{"title":"Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution","authors":"J. Hwang, Li-Shang Lin, T. Hsueh, S. Hwang","doi":"10.1149/2.014203ESL","DOIUrl":"https://doi.org/10.1149/2.014203ESL","url":null,"abstract":"A thickening polycrystalline silicon (pc-Si) layer with a grain size of 35 μm was grown on an aluminum-induced crystallization (AIC) Si film, with low and high hydrogen dilution. An AIC seed layer was grown on a glass substrate, and a pc-Si epitaxial layer was deposited on it at 450◦C by hot-wire chemical vapor deposition. The AIC seed layer exhibits a highly crystalline structure and enhances the growth of the pc-Si layer. The crystalline fraction (93%) with high hydrogen dilution was larger than that (21%) with low hydrogen dilution, owing to low activation energy for nucleation and grain growth. © 2011 The Electrochemical Society. [DOI: 10.1149/2.014203esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83660257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Three-Dimensional Reconstruction of a LiCoO2 Li-Ion Battery Cathode LiCoO2锂离子电池正极的三维重建
Pub Date : 2012-01-01 DOI: 10.1149/2.002203ESL
T. Hutzenlaub, S. Thiele, R. Zengerle, C. Ziegler
Experimental To obtain the electrode material used in this work, a new VARTA LIC 18650 WC lithium-ion battery was unsealed and dismantled. After evaporation of the electrolyte, a piece was extracted from the cathodeandpreparedforFIB/SEMbysputteringaplatinumlayeronto the surface of the sample to gain a more planar area as a starting point for the FIB. Additionally, two reference lines, one orthogonal and the other with an angle of 48.2 ◦ in relation to the cutting plane, were imprinted into the platinum layer, providing a method independent of surface skew or irregularities to determine slice thickness (Fig. 1). With the help of an FEI Quanta three-dimensional dual-beam FIBSEM at Fraunhofer IZM, Berlin, a cavity was cut into the sample as a starting point and subsequently one side of the cuboid was ablated slice by slice, while the SEM, with an angle of 38 ◦ relative to the sample surface, generated one image per slice.
为了获得本研究中使用的电极材料,我们对一个新的VARTA LIC 18650 WC锂离子电池进行了拆封和拆卸。电解液蒸发后,从阴极中提取一块,并在样品表面上溅射铂层,以获得更平坦的面积作为FIB的起点。另外,两条参考线,一个正交,另一个角为48.2◦与截平面,被印到铂层,提供一个方法独立于表面倾斜或违规行为来确定切片厚度的帮助下(图1)。一个范广达电脑三维双光束在弗劳恩霍夫IZM FIBSEM,柏林,一腔的切成示例作为起点和随后的一侧长方体是熔化的一片一片,扫描电镜,与38◦的角度相对于样品表面,每片生成一个图像。
{"title":"Three-Dimensional Reconstruction of a LiCoO2 Li-Ion Battery Cathode","authors":"T. Hutzenlaub, S. Thiele, R. Zengerle, C. Ziegler","doi":"10.1149/2.002203ESL","DOIUrl":"https://doi.org/10.1149/2.002203ESL","url":null,"abstract":"Experimental To obtain the electrode material used in this work, a new VARTA LIC 18650 WC lithium-ion battery was unsealed and dismantled. After evaporation of the electrolyte, a piece was extracted from the cathodeandpreparedforFIB/SEMbysputteringaplatinumlayeronto the surface of the sample to gain a more planar area as a starting point for the FIB. Additionally, two reference lines, one orthogonal and the other with an angle of 48.2 ◦ in relation to the cutting plane, were imprinted into the platinum layer, providing a method independent of surface skew or irregularities to determine slice thickness (Fig. 1). With the help of an FEI Quanta three-dimensional dual-beam FIBSEM at Fraunhofer IZM, Berlin, a cavity was cut into the sample as a starting point and subsequently one side of the cuboid was ablated slice by slice, while the SEM, with an angle of 38 ◦ relative to the sample surface, generated one image per slice.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83176457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 87
Alkaline Fuel Cell Membranes from Electrospun Fiber Mats 电纺纤维垫制备的碱性燃料电池膜
Pub Date : 2012-01-01 DOI: 10.1149/2.010203ESL
Andrew M. Park, P. Pintauro
{"title":"Alkaline Fuel Cell Membranes from Electrospun Fiber Mats","authors":"Andrew M. Park, P. Pintauro","doi":"10.1149/2.010203ESL","DOIUrl":"https://doi.org/10.1149/2.010203ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"101 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79944618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry H2O2和2-MT对酸浆中钴附着层化学机械抛光的影响
Pub Date : 2012-01-01 DOI: 10.1149/2.017204ESL
Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Wenjun Zhang, X. Qu
{"title":"The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry","authors":"Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Wenjun Zhang, X. Qu","doi":"10.1149/2.017204ESL","DOIUrl":"https://doi.org/10.1149/2.017204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"11 7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83509209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
SnSe Nanoparticles Anchored on TiO2 Nanotube Arrays by Pulsed Electrochemical Deposition 脉冲电化学沉积在TiO2纳米管阵列上的SnSe纳米颗粒
Pub Date : 2012-01-01 DOI: 10.1149/2.003201ESL
Y. Liang, Z. Cui, S. L. Zhu, X. J. Yang
{"title":"SnSe Nanoparticles Anchored on TiO2 Nanotube Arrays by Pulsed Electrochemical Deposition","authors":"Y. Liang, Z. Cui, S. L. Zhu, X. J. Yang","doi":"10.1149/2.003201ESL","DOIUrl":"https://doi.org/10.1149/2.003201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86907603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
In Situ Optical Emission Spectrometry during Porous Anodic Alumina Initiation and Growth in Phosphoric Acid 多孔阳极氧化铝在磷酸中起始和生长的原位光学发射光谱研究
Pub Date : 2012-01-01 DOI: 10.1149/2.009201ESL
Q. Overmeere, D. Mercier, R. Santoro, J. Proost
We report on the use of in-situ optical emission spectrometry to monitor the Al3+ loss rate during the anodic oxidation of aluminum in phosphoric acid. Three distinct stages were observed, the highest rate being measured during barrier layer growth. The evolution of the loss rate is markedly different from the evolution previously reported for sulfuric acid anodizing. We speculate that this may be related to the different pore morphologies obtained in these electrolytes. Our measurements also indicate that below 2 mA/cm2, field-assisted dissolution is the predominant contribution to Al3+ loss, while direct cation ejection is predominant at higher current densities.
本文报道了用原位发射光谱法监测磷酸中铝阳极氧化过程中Al3+的损失率。观察到三个不同的阶段,在屏障层生长期间测量到的速率最高。损失率的演变与先前报道的硫酸阳极氧化的演变有明显不同。我们推测这可能与这些电解质中获得的不同孔隙形态有关。我们的测量还表明,在2 mA/cm2以下,场辅助溶解是Al3+损失的主要原因,而在更高的电流密度下,直接阳离子喷射是主要原因。
{"title":"In Situ Optical Emission Spectrometry during Porous Anodic Alumina Initiation and Growth in Phosphoric Acid","authors":"Q. Overmeere, D. Mercier, R. Santoro, J. Proost","doi":"10.1149/2.009201ESL","DOIUrl":"https://doi.org/10.1149/2.009201ESL","url":null,"abstract":"We report on the use of in-situ optical emission spectrometry to monitor the Al3+ loss rate during the anodic oxidation of aluminum in phosphoric acid. Three distinct stages were observed, the highest rate being measured during barrier layer growth. The evolution of the loss rate is markedly different from the evolution previously reported for sulfuric acid anodizing. We speculate that this may be related to the different pore morphologies obtained in these electrolytes. Our measurements also indicate that below 2 mA/cm2, field-assisted dissolution is the predominant contribution to Al3+ loss, while direct cation ejection is predominant at higher current densities.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86503930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory 掺氮Si0.6Sb2Te3材料在相变存储器中的应用
Pub Date : 2012-01-01 DOI: 10.1149/2.022204ESL
Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu
Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N
氮掺杂Si0.6Sb2Te3薄膜的结晶温度(约185℃)高于Ge2Sb2Te5(约150℃),在氮掺杂Si0.6Sb2Te3材料(SST-N)晶体内未观察到分离的Si或Te相。N
{"title":"N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory","authors":"Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu","doi":"10.1149/2.022204ESL","DOIUrl":"https://doi.org/10.1149/2.022204ESL","url":null,"abstract":"Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76479633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
期刊
Electrochemical and Solid State Letters
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1