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Electrochemical and Solid State Letters最新文献

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Synthesis of Cubic Phase Li7La3Zr2O12 Electrolyte for Solid-State Lithium-Ion Batteries 固态锂离子电池用立方相Li7La3Zr2O12电解质的合成
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.003203ESL
Jiajia Tan, A. Tiwari
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引用次数: 51
Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese 双(乙基环戊二烯基)锰在多孔SiCOH低钾电介质上化学气相沉积锰的研究
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.006206ESL
N. Jourdan, M. Krishtab, M. Baklanov, J. Meersschaut, Christopher J. Wilson, J. Ablett, E. Fonda, L. Zhao, S. Elshocht, Z. Tokei, E. Vancoille
MnO/MnSiO3-based layers were formed on porous SiCOH low-k dielectrics by Chemical Vapor Deposition (CVD) of Mn from Bisethylcyclopentadienyl manganese. The oxide phase formation is driven by the moisture desorbing from the low-k films. The silicate phase is defined by silanol groups chemisorbed on the low-k surface. The experimental results suggest that formation of thin Mn-based copper diffusion barrier (pore sealing) by CVD is limited to dielectrics having a pore size smaller than the Mn precursor molecules. In the case of larger pore sizes, Mn is deposited inside the dielectric on the pores surface and the layer cannot be a diffusion barrier. © 2012 The Electrochemical Society. [DOI: 10.1149/2.006206esl] All rights reserved.
以二乙基环戊二烯锰为原料，化学气相沉积(CVD) Mn，在多孔SiCOH低钾介质上形成了MnO/ mnsio3基层。氧化相的形成是由低钾膜的水分解吸驱动的。硅相由硅醇基在低钾表面的化学吸附而定义。实验结果表明，CVD形成的薄锰基铜扩散屏障(封孔)仅限于孔径小于Mn前驱体分子的介电体。在孔径较大的情况下，Mn沉积在孔隙表面的介电介质内，该层不能成为扩散屏障。©2012电化学学会。[DOI: 10.1149/2.006206]版权所有。
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引用次数: 17
Oxygen Reduction Reaction of Pt Supported on Y-Doped SrTiO3 y掺杂SrTiO3负载Pt的氧还原反应
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.017205ESL
Kug‐Seung Lee, Songkil Yoo, Y. Nah, Hee Su Kim, K. Park, J. Yun
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引用次数: 2
Cu2-xSe Films Fabricated by the Low-Temperature Electrophoretic Deposition 低温电泳沉积制备Cu2-xSe薄膜
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.001201ESL
C. Ting, Wen Lee
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引用次数: 7
Electrical Characterization of Thin Films by an Original Micro-Electrode Calibration Method 基于微电极校准方法的薄膜电特性研究
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.029204ESL
N. Bailly, E. Djurado, S. Georges
A method allowing the electrical characterization of ionic conducting films is described. This method is based on the calibration of the electrically active surface of a platinum micro-electrode. This method allows a significant decrease of instrumental or parasitic effects, the observation of dielectric relaxations at high temperature, the characterization of imperfectly tight layers, and gives an alternative to paint or sputtered Pt layer current collectors. © 2012 The Electrochemical Society. [DOI: 10.1149/2.029204esl] All rights reserved.
描述了一种允许离子导电膜的电学表征的方法。该方法基于对铂微电极电活性表面的标定。这种方法可以显著减少仪器或寄生效应，观察高温下的介电弛豫，表征不完全紧密层，并提供油漆或溅射Pt层集热器的替代方案。©2012电化学学会。[DOI: 10.1149/2.029204]版权所有。
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引用次数: 4
High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material 基于snte掺杂Ge2Sb2Te5材料的高速相变存储器
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.006203ESL
Jian'an Xu, F. Rao, Zhitang Song, Mengjiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, S. Feng
SnTe-doped Ge2Sb2Te5 material is proposed to increase the phase change speed. The reversible phase change can be achieved by a voltage pulse as short as 30ns. Laser-induced crystallization speed is accelerated due to SnTe incorporation. SnTe plays a same
为了提高相变速度，提出了掺snte的Ge2Sb2Te5材料。可逆的相变可以通过短至30ns的电压脉冲来实现。由于SnTe的加入，激光诱导结晶速度加快。他也玩同样的游戏
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引用次数: 14
Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k 氧化钼纳米点嵌入ZrHfO高k的记忆功能
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.020206ESL
Xi Liu, Chia-Han Yang, Y. Kuo, Tao Yuan
{"title":"Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k","authors":"Xi Liu, Chia-Han Yang, Y. Kuo, Tao Yuan","doi":"10.1149/2.020206ESL","DOIUrl":"https://doi.org/10.1149/2.020206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81973020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory 扁平TiN电极对HfO2基电阻式存储器记忆性能的影响
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.001205ESL
Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, T. Wu, P. Gu, Frederick T. Chen, M. Tsai
{"title":"Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory","authors":"Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, T. Wu, P. Gu, Frederick T. Chen, M. Tsai","doi":"10.1149/2.001205ESL","DOIUrl":"https://doi.org/10.1149/2.001205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82225418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Emissive Transparent Luminescent Layer Using Shape Controlled YBO3:Eu3+ Nanophosphors Prepared by Solvothermal Reactions 利用溶剂热反应制备形状可控的YBO3:Eu3+纳米荧光粉发射透明发光层
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.016205ESL
Sungho Choi, B. Park, Jung-hyun Seo, Youngshik Jun, Ha-Kyun Jung
{"title":"Emissive Transparent Luminescent Layer Using Shape Controlled YBO3:Eu3+ Nanophosphors Prepared by Solvothermal Reactions","authors":"Sungho Choi, B. Park, Jung-hyun Seo, Youngshik Jun, Ha-Kyun Jung","doi":"10.1149/2.016205ESL","DOIUrl":"https://doi.org/10.1149/2.016205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"60 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83427174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Influence of Sputtering Power on Phase-Change Films 溅射功率对相变膜的影响
Electrochemical and Solid State Letters
Pub Date : 2012-01-01 DOI: 10.1149/2.024206ESL
Lei Zhang, L. Gu, Xiaodong Han, Huan Huang, Yanan Dai, Yan Cheng, Yang Wang, Zemin Zhang, Yi-qun Wu, Bo Liu, Zhitang Song
Sputter-deposited amorphous films of a phase-change material (Ge2Sb2Te5) were prepared with various magnetron sputtering powers to determine its influence. Microscopic characteristics indicate that the sputtering power affects the film morphology: high sp
采用不同磁控溅射功率制备了相变材料(Ge2Sb2Te5)的溅射沉积非晶膜，以确定其影响。显微特征表明，溅射功率影响薄膜的形貌:高sp
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引用次数: 0
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