Nishana Kizhakkumparaban, Andrzej Sławek, Avija Ajayakumar, Akash Suresh, Nandana S. Kavitha, Poulomi Mukherjee, Akinori Saeki, D.D. Sarma, Konrad Szaciłowski, Chakkooth Vijayakumar
The development of lead-free perovskites for optoelectronic applications remains a crucial challenge, particularly in achieving high performance at low operating voltages. Here, a 0D bismuth hybrid perovskite containing 2-(2-thienyl)pyridinium (TEP) as the organic cation, (2TEP)4Bi2I10 (TTBI) is reported, that exhibits excellent photodetection capabilities and interesting thermochromic behavior. Single crystal X-ray diffraction reveals a structure featuring isolated Bi2I104− dimeric units with short I···I contacts (3.87 Å), promoting enhanced electronic coupling. Density functional theory calculations confirm a direct bandgap of 1.79 eV, while flash-photolysis time-resolved microwave conductivity measurements demonstrate a remarkably long charge carrier lifetime of 7.3 µs. Notably, photodetector devices based on TTBI achieve impressive performance metrics at an ultra-low bias voltage of 0.01 V, including a responsivity of 86 mA W−1, a detectivity of 3.9 × 1012 Jones, an on/off ratio of 104, and an ultralow dark current of 1 pA. The material also exhibits reversible thermochromic behavior with bandgap modulation from 2.09 to 2.03 eV between 303 and 403 K, driven by thermal expansion and electron-phonon coupling, enabling dual-mode optical and thermal sensing. These findings, combined with excellent ambient stability, demonstrate the potential of TTBI as a versatile, environmentally friendly material for next-generation optoelectronic applications.
开发用于光电应用的无铅钙钛矿仍然是一个关键的挑战,特别是在低工作电压下实现高性能。本文报道了一种以2-(2-噻吩基)吡啶(TEP)为有机阳离子的0D铋杂化钙钛矿(2TEP)4Bi2I10 (TTBI),该钙钛矿具有优异的光探测能力和有趣的热致变色行为。单晶x射线衍射揭示了具有较短I···I触点(3.87 Å)的孤立Bi2I104−二聚体单元的结构,促进了增强的电子耦合。密度泛函理论计算证实了1.79 eV的直接带隙,而闪烁光解时间分辨微波电导率测量显示了7.3µs的极长载流子寿命。值得注意的是,基于TTBI的光电探测器器件在0.01 V的超低偏置电压下实现了令人印象深刻的性能指标,包括响应度为86 mA W - 1,检出率为3.9 × 1012 Jones,开/关比为104,超低暗电流为1 pA。在热膨胀和电子-声子耦合的驱动下,该材料还表现出可逆的热致变色行为,在303 ~ 403 K之间具有2.09 ~ 2.03 eV的带隙调制,实现了双模光学和热传感。这些发现与出色的环境稳定性相结合,证明了TTBI作为下一代光电应用的多功能环保材料的潜力。
{"title":"Zero-Dimensional Bismuth Halide Perovskite with Direct Bandgap for Ultra-Low Voltage Photodetection","authors":"Nishana Kizhakkumparaban, Andrzej Sławek, Avija Ajayakumar, Akash Suresh, Nandana S. Kavitha, Poulomi Mukherjee, Akinori Saeki, D.D. Sarma, Konrad Szaciłowski, Chakkooth Vijayakumar","doi":"10.1002/adom.202502655","DOIUrl":"https://doi.org/10.1002/adom.202502655","url":null,"abstract":"<p>The development of lead-free perovskites for optoelectronic applications remains a crucial challenge, particularly in achieving high performance at low operating voltages. Here, a 0D bismuth hybrid perovskite containing 2-(2-thienyl)pyridinium (TEP) as the organic cation, (2TEP)<sub>4</sub>Bi<sub>2</sub>I<sub>10</sub> (<b>TTBI</b>) is reported, that exhibits excellent photodetection capabilities and interesting thermochromic behavior. Single crystal X-ray diffraction reveals a structure featuring isolated Bi<sub>2</sub>I<sub>10</sub><sup>4</sup><sup>−</sup> dimeric units with short I···I contacts (3.87 Å), promoting enhanced electronic coupling. Density functional theory calculations confirm a direct bandgap of 1.79 eV, while flash-photolysis time-resolved microwave conductivity measurements demonstrate a remarkably long charge carrier lifetime of 7.3 µs. Notably, photodetector devices based on <b>TTBI</b> achieve impressive performance metrics at an ultra-low bias voltage of 0.01 V, including a responsivity of 86 mA W<sup>−1</sup>, a detectivity of 3.9 × 10<sup>1</sup><sup>2</sup> Jones, an on/off ratio of 10<sup>4</sup>, and an ultralow dark current of 1 pA. The material also exhibits reversible thermochromic behavior with bandgap modulation from 2.09 to 2.03 eV between 303 and 403 K, driven by thermal expansion and electron-phonon coupling, enabling dual-mode optical and thermal sensing. These findings, combined with excellent ambient stability, demonstrate the potential of <b>TTBI</b> as a versatile, environmentally friendly material for next-generation optoelectronic applications.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 6","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146162606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Projection multiphoton lithography (PMPL) is a promising alternative to conventional voxel-by-voxel serial writing lithography, offering significant gain in fabrication speed. However, this high throughput can come at the expense of geometric accuracy, as printed structures can deviate from the intended patterns displayed on the digital micromirror device (DMD). To uncover the origins of these deviations, a numerical framework is developed that solves coupled 3D reaction-diffusion equations and captures the underlying photochemical processes of projection-based printing. Simulations of elementary geometries such as circles and rectangles, which serve as building blocks of complex architectures, reveal that oxygen inhibition, oxygen diffusion from surrounding regions, and intensity variations due to DMD diffraction are the dominant sources of geometric distortion. Guided by these insights, pre-exposure and asymmetric compensation strategies are proposed that modify the projected patterns to counteract these effects. Simulations and experiments indicate that these approaches hold promise for mitigating distortions and improving the fidelity of printed structures, offering a pathway toward more accurate, high-throughput 3D microfabrication.
{"title":"Modeling and Improving Geometric Accuracy in Projection Multiphoton Lithography","authors":"Anwarul Islam Akash, Jason E. Johnson, Xianfan Xu","doi":"10.1002/adom.202503185","DOIUrl":"https://doi.org/10.1002/adom.202503185","url":null,"abstract":"<p>Projection multiphoton lithography (PMPL) is a promising alternative to conventional voxel-by-voxel serial writing lithography, offering significant gain in fabrication speed. However, this high throughput can come at the expense of geometric accuracy, as printed structures can deviate from the intended patterns displayed on the digital micromirror device (DMD). To uncover the origins of these deviations, a numerical framework is developed that solves coupled 3D reaction-diffusion equations and captures the underlying photochemical processes of projection-based printing. Simulations of elementary geometries such as circles and rectangles, which serve as building blocks of complex architectures, reveal that oxygen inhibition, oxygen diffusion from surrounding regions, and intensity variations due to DMD diffraction are the dominant sources of geometric distortion. Guided by these insights, pre-exposure and asymmetric compensation strategies are proposed that modify the projected patterns to counteract these effects. Simulations and experiments indicate that these approaches hold promise for mitigating distortions and improving the fidelity of printed structures, offering a pathway toward more accurate, high-throughput 3D microfabrication.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 6","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202503185","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146199392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xinzhe Fang, Fei Tang, Lele Gao, Xuan Li, Zichen Wen, Jia Xiao, Qishen Yin, Guowei Du, Siyuan Qu, Shijie Xu
Transition-metal activators such as Cr3+ offer an exceptional platform for probing the interplay between crystal structure and electronic transitions in solid-state luminescent materials. Here, a composition-controlled La3Sc2Ga3O12: Cr system is demonstrated that undergoes a reversible transformation from a garnet (Ia