Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621143
A. Steckl
A review of the current and potential future uses of FIB technology for the fabrication of optoelectronic devices and circuits is presented. The advantages of the maskless and resistless FIB fabrication are briefly reviewed. A DBR laser totally fabricated by FIB (both gratings and channel waveguide) is discussed as an example of FIB-fabricated optoelectronic components. The opportunities and challenges of future applications of FIB technology in fiber-optic communications optoelectronics are considered. In this application, components such as WDM laser sources, add/drop filters, waveguides, and combiners can be ideally fabricated in an integrated optoelectronic circuit by FIB.
{"title":"Exploring the frontiers of optoelectronics with FIB technology","authors":"A. Steckl","doi":"10.1109/WOFE.1997.621143","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621143","url":null,"abstract":"A review of the current and potential future uses of FIB technology for the fabrication of optoelectronic devices and circuits is presented. The advantages of the maskless and resistless FIB fabrication are briefly reviewed. A DBR laser totally fabricated by FIB (both gratings and channel waveguide) is discussed as an example of FIB-fabricated optoelectronic components. The opportunities and challenges of future applications of FIB technology in fiber-optic communications optoelectronics are considered. In this application, components such as WDM laser sources, add/drop filters, waveguides, and combiners can be ideally fabricated in an integrated optoelectronic circuit by FIB.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"411 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133384888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621168
P. Tasker
In the past five to ten years there has been considerable advancement both in measurement capabilities at microwave and millimeter wave frequencies and in measurement data analysis. This has resulted in considerable improvements in the techniques for direct extraction of accurate CAD based models. S-parameter measurements can now be performed on-wafer up to 120 GHz allowing for the extraction of small signal CAD models valid to millimeter wave frequencies. This has resulted in the realization of high performance, 20 dB gain at 110 GHz, MMICs for millimeter wave system applications. Optimized measurements systems for noise parameter measurement at microwave frequencies have been demonstrated. Combined with improved CAD models these also allow for the accurate extrapolation of noise parameters to millimeter wave frequencies. In the area of non-linear characterization, while confined to microwave frequencies, new sophisticated measurement systems are presently being developed. These systems operate in the time domain, thus allowing for measurement not only of RF input and output power but also the RF input and output voltage and current waveforms. This information is leading both to an improved understanding of non-linear transistor dynamic behavior and also to the extraction of accurate non-linear models.
{"title":"Microwave and millimeter wave on-wafer transistor characterization capabilities and HFET CAD model extraction techniques","authors":"P. Tasker","doi":"10.1109/WOFE.1997.621168","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621168","url":null,"abstract":"In the past five to ten years there has been considerable advancement both in measurement capabilities at microwave and millimeter wave frequencies and in measurement data analysis. This has resulted in considerable improvements in the techniques for direct extraction of accurate CAD based models. S-parameter measurements can now be performed on-wafer up to 120 GHz allowing for the extraction of small signal CAD models valid to millimeter wave frequencies. This has resulted in the realization of high performance, 20 dB gain at 110 GHz, MMICs for millimeter wave system applications. Optimized measurements systems for noise parameter measurement at microwave frequencies have been demonstrated. Combined with improved CAD models these also allow for the accurate extrapolation of noise parameters to millimeter wave frequencies. In the area of non-linear characterization, while confined to microwave frequencies, new sophisticated measurement systems are presently being developed. These systems operate in the time domain, thus allowing for measurement not only of RF input and output power but also the RF input and output voltage and current waveforms. This information is leading both to an improved understanding of non-linear transistor dynamic behavior and also to the extraction of accurate non-linear models.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129406060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621137
C. Fonstad, J. Ahadian, S. G. Patterson, P. Vaidyanathan, Y. Royter, G. Petrich, L. Kolodziejski, S. Prasad
An integration technique, epitaxy-on-electronics (EoE), is described wherein optoelectronic and quantum effect device heterostructures are grown on fully processed GaAs integrated circuit chips and subsequently processed into devices monolithically integrated with the pre-existing circuitry. Using this technique, one can realize the increased performance and functionality promised by adding advanced heterostructure quantum effect and optoelectronic devices to conventional integrated electronic circuitry, without developing a complete new VLSI technology. The details of the EoE technology are explained, and examples of optoelectronic integrated circuits incorporating LEDs, detectors, and MESFET electronics are presented. The OPTOCHIP Project, a prototype EoE research OEIC foundry, and work on EoE integration of resonant tunneling diodes to form one-transistor GaAs static random access memory cells, are also described.
{"title":"Epitaxy-on-electronics enhancement of GaAs IC performance with monolithic optical and quantum-effect devices","authors":"C. Fonstad, J. Ahadian, S. G. Patterson, P. Vaidyanathan, Y. Royter, G. Petrich, L. Kolodziejski, S. Prasad","doi":"10.1109/WOFE.1997.621137","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621137","url":null,"abstract":"An integration technique, epitaxy-on-electronics (EoE), is described wherein optoelectronic and quantum effect device heterostructures are grown on fully processed GaAs integrated circuit chips and subsequently processed into devices monolithically integrated with the pre-existing circuitry. Using this technique, one can realize the increased performance and functionality promised by adding advanced heterostructure quantum effect and optoelectronic devices to conventional integrated electronic circuitry, without developing a complete new VLSI technology. The details of the EoE technology are explained, and examples of optoelectronic integrated circuits incorporating LEDs, detectors, and MESFET electronics are presented. The OPTOCHIP Project, a prototype EoE research OEIC foundry, and work on EoE integration of resonant tunneling diodes to form one-transistor GaAs static random access memory cells, are also described.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133813541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621159
J. Tucker
Metal silicide source/drain MOSFETs may provide a simple route to terabit integrated circuits with /spl sim/25 nm gate length and /spl sim/100 nm overall device size. Potential advantages of this approach are outlined here along with recent progress.
{"title":"Schottky barrier MOSFETs for silicon nanoelectronics","authors":"J. Tucker","doi":"10.1109/WOFE.1997.621159","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621159","url":null,"abstract":"Metal silicide source/drain MOSFETs may provide a simple route to terabit integrated circuits with /spl sim/25 nm gate length and /spl sim/100 nm overall device size. Potential advantages of this approach are outlined here along with recent progress.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122061829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621162
H. Hasegawa
Main features and limitations of present LSIs and emerging quantum LSIs are briefly discussed. As the next-generation electronics, quantum LSIs based on single electron devices on quantum dot arrays are most promising. Key issues for success of their room temperature operation and high density integration are discussed.
{"title":"Toward room temperature operation and high density integration of single electron devices","authors":"H. Hasegawa","doi":"10.1109/WOFE.1997.621162","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621162","url":null,"abstract":"Main features and limitations of present LSIs and emerging quantum LSIs are briefly discussed. As the next-generation electronics, quantum LSIs based on single electron devices on quantum dot arrays are most promising. Key issues for success of their room temperature operation and high density integration are discussed.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117181904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621136
Utkarsh Mishra, P. Parikh, P. Chavarkar, J. Champlain
The widespread use of wireless and mobile communication systems has necessitated the development of high frequency ultra-low power electronics. To minimize power consumption, it is essential to reduce the ungated electron currents in the on-state and the subthreshold leakage current in the off-state. III-V semiconductors are attractive for low power applications because of high electron mobility and saturation velocity. This allows the reduction of the drain supply voltage without sacrificing the current drive, transconductance (g/sub m/) and high frequency performance. However, the major drawback is the lack of a gate insulator (to allow for MOS technology) and a oxide buffer (to allow for the equivalent of SOI technology). Recently, there has been an increased interest in the wet oxidation of AlAs, mainly for current confinement applications in optical devices. We have developed insulated gate and oxide buffer technologies using the wet oxidation of AlGaAs to provide the insulator. In this paper the fabrication and performance of GaAs MISFET with Al/sub 2/O/sub 3/ gate insulator, GaAs on insulator MESFET and pHEMT is presented. Also preliminary results using oxidized AlAsSb for the fabrication of oxide buffer AlInAs-GaInAs HEMTs is included.
{"title":"GaAs on insulator (GOI) for low power applications","authors":"Utkarsh Mishra, P. Parikh, P. Chavarkar, J. Champlain","doi":"10.1109/WOFE.1997.621136","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621136","url":null,"abstract":"The widespread use of wireless and mobile communication systems has necessitated the development of high frequency ultra-low power electronics. To minimize power consumption, it is essential to reduce the ungated electron currents in the on-state and the subthreshold leakage current in the off-state. III-V semiconductors are attractive for low power applications because of high electron mobility and saturation velocity. This allows the reduction of the drain supply voltage without sacrificing the current drive, transconductance (g/sub m/) and high frequency performance. However, the major drawback is the lack of a gate insulator (to allow for MOS technology) and a oxide buffer (to allow for the equivalent of SOI technology). Recently, there has been an increased interest in the wet oxidation of AlAs, mainly for current confinement applications in optical devices. We have developed insulated gate and oxide buffer technologies using the wet oxidation of AlGaAs to provide the insulator. In this paper the fabrication and performance of GaAs MISFET with Al/sub 2/O/sub 3/ gate insulator, GaAs on insulator MESFET and pHEMT is presented. Also preliminary results using oxidized AlAsSb for the fabrication of oxide buffer AlInAs-GaInAs HEMTs is included.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123139730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621152
J. Izpura, E. Mũnoz
In epitaxial layers with a large area to thickness ratio, surface and interface space charge regions being, modulated by the incident light, behave as transverse Resistance-Capacitance systems modulating the effective volume that takes part in the layer electrical conductivity. Photoconductivity spectroscopy has been applied to gated and ungated GaAs samples, to validate present model. We also show that any sample conductivity variation due to the photoconductive effect (carrier concentration variation due to light absorption) is largely exceeded by the volume modulation effect due to the width variations of the space charge regions. Implications for optoelectronic characterization techniques are discussed.
{"title":"Epitaxial photoconductive detectors: a kind of photo-FET device","authors":"J. Izpura, E. Mũnoz","doi":"10.1109/WOFE.1997.621152","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621152","url":null,"abstract":"In epitaxial layers with a large area to thickness ratio, surface and interface space charge regions being, modulated by the incident light, behave as transverse Resistance-Capacitance systems modulating the effective volume that takes part in the layer electrical conductivity. Photoconductivity spectroscopy has been applied to gated and ungated GaAs samples, to validate present model. We also show that any sample conductivity variation due to the photoconductive effect (carrier concentration variation due to light absorption) is largely exceeded by the volume modulation effect due to the width variations of the space charge regions. Implications for optoelectronic characterization techniques are discussed.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121686013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621133
M. Berroth
The growing demand for mobile communication is not only driven by hand-held phones. Wireless local area network and personal digital assistants are also requiring high frequency power amplifiers with high power added efficiency. Even higher frequencies of operation are required for base station interlinks and sensor applications like automotive collision avoidance radar. Several watts of output power at millimeter wave frequencies is a very demanding target with the high electron mobility transistor (HEMT) as the most promising candidate. In this paper the present status of millimeter wave transistors and circuits as well as future applications are discussed.
{"title":"RF power potential of HEMTs","authors":"M. Berroth","doi":"10.1109/WOFE.1997.621133","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621133","url":null,"abstract":"The growing demand for mobile communication is not only driven by hand-held phones. Wireless local area network and personal digital assistants are also requiring high frequency power amplifiers with high power added efficiency. Even higher frequencies of operation are required for base station interlinks and sensor applications like automotive collision avoidance radar. Several watts of output power at millimeter wave frequencies is a very demanding target with the high electron mobility transistor (HEMT) as the most promising candidate. In this paper the present status of millimeter wave transistors and circuits as well as future applications are discussed.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130185907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621181
B. Iñíguez, E. G. Moreno
We present in this paper an original approach to the modeling of surface-channel FETs which leads to complete models valid for all operating regimes. Using a unified charge control model we obtain analytical expressions for the channel current and total terminal charges. By including short-channel effects using appropriate physically-based equations the new technique is extended to deep submicron devices. All equations have an infinite order of continuity; this is very useful in analog design, where accurate expressions of the derivatives of current and charges are needed.
{"title":"Unified C/sub /spl infin//-continuous modeling of surface-channel FETs","authors":"B. Iñíguez, E. G. Moreno","doi":"10.1109/WOFE.1997.621181","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621181","url":null,"abstract":"We present in this paper an original approach to the modeling of surface-channel FETs which leads to complete models valid for all operating regimes. Using a unified charge control model we obtain analytical expressions for the channel current and total terminal charges. By including short-channel effects using appropriate physically-based equations the new technique is extended to deep submicron devices. All equations have an infinite order of continuity; this is very useful in analog design, where accurate expressions of the derivatives of current and charges are needed.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115471362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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