Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621156
H. Cruz, A. Hernández-Cabrera, P. Aceituno
We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.
{"title":"Effect of the free carrier concentration on the escape time of excitons in quantum devices","authors":"H. Cruz, A. Hernández-Cabrera, P. Aceituno","doi":"10.1109/WOFE.1997.621156","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621156","url":null,"abstract":"We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115070731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621132
L. Eastman, K. Chu, J. Burm, W. Schaff, M. Murphy, N. Weimann
AlGaN-GaN modulation doped field effect transistors (MODFETs) with short gates show great promise for high power microwave amplifier applications. The lattice mismatch between Al/sub x/Ga/sub 1-x/N limits the thickness and/or the fraction of Al in the barrier. An upper limit of x=0.40 exists for 150 /spl Aring/ thick barriers for example, although lower x values and thicker barriers are commonly used. It is also possible to dope the channel, as well as the barrier. A simple analytical design model has been developed to show the tradeoff of 2DEG density with barrier composition and thickness, channel composition and thickness, and the location and sheet density of atomic planar doping.
{"title":"Design, fabrication and characterization of GaN-based HFET's","authors":"L. Eastman, K. Chu, J. Burm, W. Schaff, M. Murphy, N. Weimann","doi":"10.1109/WOFE.1997.621132","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621132","url":null,"abstract":"AlGaN-GaN modulation doped field effect transistors (MODFETs) with short gates show great promise for high power microwave amplifier applications. The lattice mismatch between Al/sub x/Ga/sub 1-x/N limits the thickness and/or the fraction of Al in the barrier. An upper limit of x=0.40 exists for 150 /spl Aring/ thick barriers for example, although lower x values and thicker barriers are commonly used. It is also possible to dope the channel, as well as the barrier. A simple analytical design model has been developed to show the tradeoff of 2DEG density with barrier composition and thickness, channel composition and thickness, and the location and sheet density of atomic planar doping.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132727078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621158
A. Hernández-Cabrera, A. Ramos, H. Cruz, P. Aceituno
We have studied the dipole electromagnetic radiation emerging from electrically pumped excitons tunneling between asymmetric double quantum wells, taking into account the two-particle nature of the process. Transition between direct and indirect excitons affects the charge oscillation of direct created excitons and therefore the terahertz emission. The frequency of this process is one order of magnitude higher than the photoexcited exciton emission.
{"title":"Terahertz emission from direct created excitons in quantum wells","authors":"A. Hernández-Cabrera, A. Ramos, H. Cruz, P. Aceituno","doi":"10.1109/WOFE.1997.621158","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621158","url":null,"abstract":"We have studied the dipole electromagnetic radiation emerging from electrically pumped excitons tunneling between asymmetric double quantum wells, taking into account the two-particle nature of the process. Transition between direct and indirect excitons affects the charge oscillation of direct created excitons and therefore the terahertz emission. The frequency of this process is one order of magnitude higher than the photoexcited exciton emission.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115766500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621178
T. Fjeldly, T. Ytterdal, M. Shur
We consider some recent developments in the modeling of submicrometer field effect transistor devices for use in design of analog and mixed mode applications. We emphasize the use of unified models with a precise and continuous description of the I-V and C-V characteristics in all regimes of operation, including the transition regions. The models incorporate short-channel and high-field effects, gate leakage current, and temperature dependencies of device parameters.
{"title":"FET modeling for analog and digital applications","authors":"T. Fjeldly, T. Ytterdal, M. Shur","doi":"10.1109/WOFE.1997.621178","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621178","url":null,"abstract":"We consider some recent developments in the modeling of submicrometer field effect transistor devices for use in design of analog and mixed mode applications. We emphasize the use of unified models with a precise and continuous description of the I-V and C-V characteristics in all regimes of operation, including the transition regions. The models incorporate short-channel and high-field effects, gate leakage current, and temperature dependencies of device parameters.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129228729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621150
J. Sánchez-Rojas, A. Guzmán, E. Muñoz, J.J. Sanchez, E. Calleja, A. Sanz-Hervás, C. Villar, M. Aguilar, M. Montojo, G. Vergara, L. J. Gomez
The choice of detector technology for infrared focal-plane arrays may be influenced by several factors as sensitivity, uniformity, array size, reproducibility, cost and integration possibilities. The material system GaAs/AlGaAs provides several advantages compared to the state-of-the-art II-VI semiconductor detectors, including the mature GaAs growth and processing technologies and the flexibility of energy band tailoring in QW's to operate at different atmospheric transmission windows. In this work we report the detailed design procedure of a tunable two-color photoconductive GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked Quantum Well Infrared Photodetector (QWIP). The structures are optimized to operate in the 3-5 /spl mu/m and 8-10 /spl mu/m windows, with peak detectivities at /spl sim/4 /spl mu/m and 9 /spl mu/m, respectively. A transfer-matrix method was used to estimate the subband energies of the structures according to the operating wavelength specifications. The effect of many-body corrections was also taken into account.
{"title":"Design and characterization of two color GaAs based quantum well infrared detector structures","authors":"J. Sánchez-Rojas, A. Guzmán, E. Muñoz, J.J. Sanchez, E. Calleja, A. Sanz-Hervás, C. Villar, M. Aguilar, M. Montojo, G. Vergara, L. J. Gomez","doi":"10.1109/WOFE.1997.621150","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621150","url":null,"abstract":"The choice of detector technology for infrared focal-plane arrays may be influenced by several factors as sensitivity, uniformity, array size, reproducibility, cost and integration possibilities. The material system GaAs/AlGaAs provides several advantages compared to the state-of-the-art II-VI semiconductor detectors, including the mature GaAs growth and processing technologies and the flexibility of energy band tailoring in QW's to operate at different atmospheric transmission windows. In this work we report the detailed design procedure of a tunable two-color photoconductive GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked Quantum Well Infrared Photodetector (QWIP). The structures are optimized to operate in the 3-5 /spl mu/m and 8-10 /spl mu/m windows, with peak detectivities at /spl sim/4 /spl mu/m and 9 /spl mu/m, respectively. A transfer-matrix method was used to estimate the subband energies of the structures according to the operating wavelength specifications. The effect of many-body corrections was also taken into account.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126218410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621164
M. Dyakonov, M. Shur
We discuss applications of plasma waves in high electron mobility transistors for detectors and sources operating in millimeter and submillimeter range. A short channel high electron mobility transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. The devices, which use this resonance response should operate at much higher frequencies than conventional, transit-time limited devices since the plasma waves propagate much faster than electrons. The responsivities of such devices may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in the terahertz range. A long channel HEMT has a nonresonant response to electromagnetic radiation and can be used as a broad band detector for frequencies up to several tens of terahertz. Recently, a prototype nonresonant detector (operating in the microwave range) was fabricated using an AlGaAs/GaAs 0.15 micron gate HEMT. The measured dependencies of the detector responsivity on the gate bias and frequency are in good agreement with our theory.
{"title":"Plasma wave electronics: terahertz detectors and sources using two dimensional electronic fluid in high electron mobility transistors","authors":"M. Dyakonov, M. Shur","doi":"10.1109/WOFE.1997.621164","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621164","url":null,"abstract":"We discuss applications of plasma waves in high electron mobility transistors for detectors and sources operating in millimeter and submillimeter range. A short channel high electron mobility transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. The devices, which use this resonance response should operate at much higher frequencies than conventional, transit-time limited devices since the plasma waves propagate much faster than electrons. The responsivities of such devices may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in the terahertz range. A long channel HEMT has a nonresonant response to electromagnetic radiation and can be used as a broad band detector for frequencies up to several tens of terahertz. Recently, a prototype nonresonant detector (operating in the microwave range) was fabricated using an AlGaAs/GaAs 0.15 micron gate HEMT. The measured dependencies of the detector responsivity on the gate bias and frequency are in good agreement with our theory.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122941941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621176
V. Gudmundsson, S. Erlingsson
We study the optical absorption of arrays of quantum dots and antidots in a perpendicular homogeneous magnetic field. The electronic system is described quantum mechanically using a Hartree approximation for the mutual Coulomb interaction of the electrons. The model is particularly suited for the investigation of the far-infrared absorption of gate-modulated systems, where the gate not only controls the distribution of the electrons, but also modulates the external radiation field.
{"title":"Magneto-optics of arrays of quantum dots and antidots","authors":"V. Gudmundsson, S. Erlingsson","doi":"10.1109/WOFE.1997.621176","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621176","url":null,"abstract":"We study the optical absorption of arrays of quantum dots and antidots in a perpendicular homogeneous magnetic field. The electronic system is described quantum mechanically using a Hartree approximation for the mutual Coulomb interaction of the electrons. The model is particularly suited for the investigation of the far-infrared absorption of gate-modulated systems, where the gate not only controls the distribution of the electrons, but also modulates the external radiation field.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116633517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621135
M. Chang
A GaAs BiFET LSI technology has been successfully developed for high speed, low power and mixed signal circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have bean produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, 2 GHz 32/spl times/2 bit shift registers, sample and hold circuits with 9-bit resolution at 200 Msps and SRAMs with ultra-fast access time (330 ps) have been successfully demonstrated.
{"title":"Heterojunction BiFET technology for high speed electronic systems","authors":"M. Chang","doi":"10.1109/WOFE.1997.621135","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621135","url":null,"abstract":"A GaAs BiFET LSI technology has been successfully developed for high speed, low power and mixed signal circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have bean produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, 2 GHz 32/spl times/2 bit shift registers, sample and hold circuits with 9-bit resolution at 200 Msps and SRAMs with ultra-fast access time (330 ps) have been successfully demonstrated.","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-01-06DOI: 10.1109/WOFE.1997.621166
G. Martin, B. Pereiaslavets, L. Eastman, M.S. Seaford
Using a modulation doped field effect transistor (MODFET) with a pseudomorphic parabolically graded channel and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). Designing double-doped MODFETs with stress compensation allows the total thickness of all the pseudomorphic layers to be extended beyond any one critical layer thickness value. Using a simple analytical method, an optimum material structure for AlInAs/InGaAs/AlInAs 3D-SMODFETs with narrow full channels is shown. These narrow channel 3D-SMODFETs on InP show minimal short channel effects (output conductance <15 mS/mm) at elevated temperatures with good pinch-off characteristics and RF performance (f/sub MAX/ to f/sub T/ ratio of 3).
使用调制掺杂场效应晶体管(MODFET)，具有伪晶抛物线渐变通道和通道两侧的原子平面掺杂伪晶势垒，可以在没有载流子的情况下在通道中实现破纪录的电子片密度(双掺杂双应力MODFET, 3D-SMODFET)。设计具有应力补偿的双掺杂modfet允许所有伪晶层的总厚度扩展到超过任何一个临界层厚度值。利用简单的分析方法，给出了窄全通道AlInAs/InGaAs/AlInAs 3d - smodfet的最佳材料结构。这些InP上的窄通道3d - smodfet在高温下表现出最小的短通道效应(输出电导<15 mS/mm)，具有良好的截断特性和RF性能(f/sub MAX/ to / f/sub T/比率为3)。
{"title":"High temperature operation of narrow channel AlInAs/InGaAs/AlInAs 3D-SMODFETs for power amplifiers","authors":"G. Martin, B. Pereiaslavets, L. Eastman, M.S. Seaford","doi":"10.1109/WOFE.1997.621166","DOIUrl":"https://doi.org/10.1109/WOFE.1997.621166","url":null,"abstract":"Using a modulation doped field effect transistor (MODFET) with a pseudomorphic parabolically graded channel and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). Designing double-doped MODFETs with stress compensation allows the total thickness of all the pseudomorphic layers to be extended beyond any one critical layer thickness value. Using a simple analytical method, an optimum material structure for AlInAs/InGaAs/AlInAs 3D-SMODFETs with narrow full channels is shown. These narrow channel 3D-SMODFETs on InP show minimal short channel effects (output conductance <15 mS/mm) at elevated temperatures with good pinch-off characteristics and RF performance (f/sub MAX/ to f/sub T/ ratio of 3).","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"50 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114028654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/wofe.1997.621187
Pilar Aceituno
{"title":"Appendix A Attendance List Of The Wofe Meeting","authors":"Pilar Aceituno","doi":"10.1109/wofe.1997.621187","DOIUrl":"https://doi.org/10.1109/wofe.1997.621187","url":null,"abstract":"","PeriodicalId":119712,"journal":{"name":"1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings","volume":"74 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121133047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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