Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619548
T. Pavel, S. Juriy, G. Serge
The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.
{"title":"Emission of electrons from form MIM structure Mo-SiO/sub 2/-Al with a layer of polypropylene","authors":"T. Pavel, S. Juriy, G. Serge","doi":"10.1109/IVNC.2005.1619548","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619548","url":null,"abstract":"The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127558842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619589
H. Sato, K. Hata, M. Matsubayashi, T. Sakai, H. Miyake, K. Hiramatsu, Y. Saito
This paper reports a newly-developed growth control technique of carbon nanotubes by forming nano-sized protrusions on surface of a substrate. This technique consists of formation of nano-protrusions on a silicon substrate by reactive ion etching in chlorine plasma and growth of carbon nanotubes by chemical vapor deposition. Results show that the existence of the nano-protrusions gives lower growth density and the smaller diameter of CNTs.
{"title":"Growth of carbon nanotubes on silicon nano-protrusions","authors":"H. Sato, K. Hata, M. Matsubayashi, T. Sakai, H. Miyake, K. Hiramatsu, Y. Saito","doi":"10.1109/IVNC.2005.1619589","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619589","url":null,"abstract":"This paper reports a newly-developed growth control technique of carbon nanotubes by forming nano-sized protrusions on surface of a substrate. This technique consists of formation of nano-protrusions on a silicon substrate by reactive ion etching in chlorine plasma and growth of carbon nanotubes by chemical vapor deposition. Results show that the existence of the nano-protrusions gives lower growth density and the smaller diameter of CNTs.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126246351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619605
T. Honda, W. Rochanachirapar, K. Murakami, K. Ohsumi, N. Shimizu, S. Abo, F. Wakaya, M. Takai
Carbon nanotube (CNT) cathodes prepared with various pastes are irradiated by KrF laser light with different power densities and homogenous spot beam. The turn-on field is lowest with the homogeneous spot beam. The characteristics are improved greatly by adding glass fillers to the paste. The turn-on field is as low as 0.34 V//spl mu/m and the emission density is as high as 5.88 mA/cm/sup 2/ at a field of 2 V//spl mu/m by KrF laser irradiation. Homogeneous emission-site distribution could be obtained by a homogeneous laser beam irradiation.
{"title":"KrF laser surface treatment of CNT cathodes","authors":"T. Honda, W. Rochanachirapar, K. Murakami, K. Ohsumi, N. Shimizu, S. Abo, F. Wakaya, M. Takai","doi":"10.1109/IVNC.2005.1619605","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619605","url":null,"abstract":"Carbon nanotube (CNT) cathodes prepared with various pastes are irradiated by KrF laser light with different power densities and homogenous spot beam. The turn-on field is lowest with the homogeneous spot beam. The characteristics are improved greatly by adding glass fillers to the paste. The turn-on field is as low as 0.34 V//spl mu/m and the emission density is as high as 5.88 mA/cm/sup 2/ at a field of 2 V//spl mu/m by KrF laser irradiation. Homogeneous emission-site distribution could be obtained by a homogeneous laser beam irradiation.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132341932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619466
B. Holloway, M. Zhu, Xin Zhao, Jianjun Wang, R. Outlaw
Recent results using carbon nanosheets (CNS) as the field emission source in a backgated device for high current applications are presented. The device inherently eliminates arcing between the gate and the cathode and also creates a much more open cathode configuration for better vacuum conductance and getter pumping. The device allows for emission site burn out and turn-on of secondary sites. Modelling results also suggest that devices with line widths <3 /spl mu/m and properly placed nanostructures should be capable of >10 mA/mm/sup 2/. Devices with 3 /spl mu/m wide lines have been fabricated and are currently being tested. The maximum current and modulation results from these devices will also be presented.
{"title":"Milliamp-class field emission devices based on free-standing, two-dimensional carbon nanostructures","authors":"B. Holloway, M. Zhu, Xin Zhao, Jianjun Wang, R. Outlaw","doi":"10.1109/IVNC.2005.1619466","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619466","url":null,"abstract":"Recent results using carbon nanosheets (CNS) as the field emission source in a backgated device for high current applications are presented. The device inherently eliminates arcing between the gate and the cathode and also creates a much more open cathode configuration for better vacuum conductance and getter pumping. The device allows for emission site burn out and turn-on of secondary sites. Modelling results also suggest that devices with line widths <3 /spl mu/m and properly placed nanostructures should be capable of >10 mA/mm/sup 2/. Devices with 3 /spl mu/m wide lines have been fabricated and are currently being tested. The maximum current and modulation results from these devices will also be presented.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115724752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619464
C. Spindt
Common issues of interest when considering a cathode for microwave tube applications are total current, current density, emittance, and parasitic capacitance if beam pre-bunching is planned. Single SRI Spindt-type emitter tips have been shown to be capable of producing over 1 mA of emission when properly processed. However, when working with large arrays of tips, achieving an average emission per tip greater than about 10 muA/tip has been elusive due primarily to insufficient uniformity from tip to tip in the as-fabricated arrays. Recent work in addressing this issue has shown that it is possible to improve tip-to-tip emission uniformity with a pulse-conditioning technique currently under development. Using recently developed lithography techniques, emitter arrays are now fabricated with gate aperture diameters of 0.35 mum and a 1-mum aperture or tip pitch (1-mum space between apertures and tips, or 108 tips/cm2). This configuration would have approximately 785,000 tips in a 1-mm-diameter area, and an average tip loading of less than 1.5 muA/tip would produce 1 amp of total peak emission with a current density of about 130 A/cm2, exceeding most vacuum tube requirements
在考虑用于微波管应用的阴极时，常见的问题是总电流，电流密度，发射度和寄生电容，如果计划光束预束束。单个SRI spindt型发射极尖端已被证明能够产生超过1毫安的发射，如果处理得当。然而，当使用大型尖端阵列时，由于在制造阵列中尖端到尖端的均匀性不足，实现每个尖端大于约10 muA/尖端的平均发射一直是难以捉摸的。最近在解决这一问题方面的工作表明，目前正在开发的脉冲调节技术可以改善尖端到尖端的发射均匀性。利用最近开发的光刻技术，现在制造的射极阵列的栅极孔径直径为0.35 μ m，孔径或尖端间距为1 μ m(孔径和尖端之间的空间为1 μ m，或108 μ m /cm2)。这种配置将在直径为1毫米的区域内拥有大约785,000个尖端，平均尖端负载小于1.5 muA/尖端将产生1安培的总峰值发射，电流密度约为130 a /cm2，超过了大多数真空管的要求
{"title":"Field emitter arrays for high-current, high-current density, and high frequency operation","authors":"C. Spindt","doi":"10.1109/IVNC.2005.1619464","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619464","url":null,"abstract":"Common issues of interest when considering a cathode for microwave tube applications are total current, current density, emittance, and parasitic capacitance if beam pre-bunching is planned. Single SRI Spindt-type emitter tips have been shown to be capable of producing over 1 mA of emission when properly processed. However, when working with large arrays of tips, achieving an average emission per tip greater than about 10 muA/tip has been elusive due primarily to insufficient uniformity from tip to tip in the as-fabricated arrays. Recent work in addressing this issue has shown that it is possible to improve tip-to-tip emission uniformity with a pulse-conditioning technique currently under development. Using recently developed lithography techniques, emitter arrays are now fabricated with gate aperture diameters of 0.35 mum and a 1-mum aperture or tip pitch (1-mum space between apertures and tips, or 108 tips/cm2). This configuration would have approximately 785,000 tips in a 1-mm-diameter area, and an average tip loading of less than 1.5 muA/tip would produce 1 amp of total peak emission with a current density of about 130 A/cm2, exceeding most vacuum tube requirements","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116394276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619574
W. Taylor, R. A. Tuck, H. Bishop, R. Riggs
The problems of limiting the voltage applied to the anode and the charging of the insulating spacers that causes surface flashover in field emission displays (FED) are solved using resistive coatings to bleed any generated charge. Low secondary electron emission coatings are also used on discrete insulating spacer components. The use of hop plate in conjunction with flue plate are adopted resulting to hop/flue structure that can act as a spacer within the FED. Hop plate dramatically improves intrapixel uniformity and pixel definition. It also screens the cathode from the anode field and places it in a low field, low stored-energy environment. Optical activity, correlated with the pre-breakdown electric currents that flowed across the surface of the insulators, is found to be related to a localised cathode triple junction. Modelling the structures describe the appearance of doughnut shaped emission patterns at the anode which disappear at higher anode voltages.
{"title":"Electrostatic design for hop & flue plates","authors":"W. Taylor, R. A. Tuck, H. Bishop, R. Riggs","doi":"10.1109/IVNC.2005.1619574","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619574","url":null,"abstract":"The problems of limiting the voltage applied to the anode and the charging of the insulating spacers that causes surface flashover in field emission displays (FED) are solved using resistive coatings to bleed any generated charge. Low secondary electron emission coatings are also used on discrete insulating spacer components. The use of hop plate in conjunction with flue plate are adopted resulting to hop/flue structure that can act as a spacer within the FED. Hop plate dramatically improves intrapixel uniformity and pixel definition. It also screens the cathode from the anode field and places it in a low field, low stored-energy environment. Optical activity, correlated with the pre-breakdown electric currents that flowed across the surface of the insulators, is found to be related to a localised cathode triple junction. Modelling the structures describe the appearance of doughnut shaped emission patterns at the anode which disappear at higher anode voltages.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"236 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123622083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619597
J.X. Huang, Jun Chen, S. Deng, J. She, N. Xu
Line-type carbon nanotube (CNT) cold cathode is prepared for a fluorescent lamp by growing CNTs on stainless steel rod using thermal chemical vapor deposition (CVD) method. We optimized the cathode by changing the growth temperature, gas mixture and gas flow direction. The optimized cathode improved the performance of the fluorescent lamp.
{"title":"Optimization of carbon nanotube cathode for a fluorescent lamp","authors":"J.X. Huang, Jun Chen, S. Deng, J. She, N. Xu","doi":"10.1109/IVNC.2005.1619597","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619597","url":null,"abstract":"Line-type carbon nanotube (CNT) cold cathode is prepared for a fluorescent lamp by growing CNTs on stainless steel rod using thermal chemical vapor deposition (CVD) method. We optimized the cathode by changing the growth temperature, gas mixture and gas flow direction. The optimized cathode improved the performance of the fluorescent lamp.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129519352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Field emission properties of the one-dimensional nanostructure grown on doped silicon substrate are studied via computer simulation. The classical transport equation is used to describe the carrier transportation in the material and is solved coupled with the Poisson's equation. The field emission process between emitter and vacuum interface is modeled by the Fowler-Nordheim equation. For studying the space-charge screening effect, the carriers are allowed to move in the vacuum region, and the space-charge fields of the carriers are also solved self-consistently through the Poisson's equation. After the simulation, the F-N plot, the carrier distribution and the band structures are figured out. The simulation results of the anode current as a function of the applied voltage for single SiCN grown on n- and p-type doped silicon substrates are shown. The simulation results exhibit that the p-type substrate will limit the emission currents of the narrow- and wide-band-gap nanostructure at the high-field region. And the space-charge screening effect will further saturate the emission current.
{"title":"Simulation study of junction effect on field emission from one-dimensional nanostructure grown on silicon substrates","authors":"Y. Lan, M. Yan","doi":"10.1116/1.2165670","DOIUrl":"https://doi.org/10.1116/1.2165670","url":null,"abstract":"Field emission properties of the one-dimensional nanostructure grown on doped silicon substrate are studied via computer simulation. The classical transport equation is used to describe the carrier transportation in the material and is solved coupled with the Poisson's equation. The field emission process between emitter and vacuum interface is modeled by the Fowler-Nordheim equation. For studying the space-charge screening effect, the carriers are allowed to move in the vacuum region, and the space-charge fields of the carriers are also solved self-consistently through the Poisson's equation. After the simulation, the F-N plot, the carrier distribution and the band structures are figured out. The simulation results of the anode current as a function of the applied voltage for single SiCN grown on n- and p-type doped silicon substrates are shown. The simulation results exhibit that the p-type substrate will limit the emission currents of the narrow- and wide-band-gap nanostructure at the high-field region. And the space-charge screening effect will further saturate the emission current.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128256576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619506
J. Janı́k, P. Vinduška, T. Danis, F. Balon
The electric field and electron trajectories in the vicinity of a cathode tip and other essential parameters were presented in this paper. The calculations for electric field and electron trajectories needed for electron gun were evaluated with EGUN software.
{"title":"Field and electron trajectory modelling in vicinity of an emitting tip","authors":"J. Janı́k, P. Vinduška, T. Danis, F. Balon","doi":"10.1109/IVNC.2005.1619506","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619506","url":null,"abstract":"The electric field and electron trajectories in the vicinity of a cathode tip and other essential parameters were presented in this paper. The calculations for electric field and electron trajectories needed for electron gun were evaluated with EGUN software.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131049532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619622
A. Govyadinov, J. Smith, B. Mackie, F. Charbonier, P. Benning
This paper discussed the design and development and fabrication of a focusable electron emitter for atomic resolution storage. The system design includes an electron source with an integrated focusing column and must provide a minimum spot size and maximum efficiency under optimum conditions. Experimental results from the fabricated parts compared well with model spot size predictions.
{"title":"Field emitter with focusing column for atomic resolution storage device","authors":"A. Govyadinov, J. Smith, B. Mackie, F. Charbonier, P. Benning","doi":"10.1109/IVNC.2005.1619622","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619622","url":null,"abstract":"This paper discussed the design and development and fabrication of a focusable electron emitter for atomic resolution storage. The system design includes an electron source with an integrated focusing column and must provide a minimum spot size and maximum efficiency under optimum conditions. Experimental results from the fabricated parts compared well with model spot size predictions.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123249618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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