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Proceedings 1996 IEEE Multi-Chip Module Conference (Cat. No.96CH35893)最新文献

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A cost analysis study of deposited-MCM active substrates for testability purposes 用于测试目的的沉积mcm活性基板的成本分析研究
Pub Date : 1996-02-06 DOI: 10.1109/MCMC.1996.510773
J. Oliver, H. Kerkhoff
MultiChip Modules (MCMs) are seen as a future powerful integration methodology for systems manufacturing. However, MCM testing has become one of the most challenging problem we will have to face in the next few years. In order to find cost effective solutions to the test of MCMs, test structures on active substrate must be considered. In this way, this paper presents cost analysis results based on yield calculations of test structures placed on active substrates.
多芯片模块(mcm)被视为未来系统制造的强大集成方法。然而,MCM测试已成为我们在未来几年将不得不面对的最具挑战性的问题之一。为了找到具有成本效益的mcm测试解决方案,必须考虑有源衬底上的测试结构。通过这种方式,本文给出了基于放置在活性基板上的测试结构的良率计算的成本分析结果。
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引用次数: 1
Early cost/performance cache analysis of a split MCM-based MicroSparc CPU 基于拆分mcm的MicroSparc CPU的早期成本/性能缓存分析
Pub Date : 1996-02-06 DOI: 10.1109/MCMC.1996.510786
P. Dehkordi, K. Ramamurthi, D. Bouldin, M. Davidson
Optimization of a microelectronic system is a difficult task involving a number of different disciplines. Often, an optimization in one discipline will result in a sub-optimal solution in other areas and the overall system. This paper looks into the optimization of a microelectronics system by concurrent consideration of the micro-architecture, package, and logic partitioning. This approach will attempt to identify an optimized design by helping the designer to explore the multi-dimensional solution space and evaluate the design candidates based on their system-level cost/performance. As a demonstration vehicle, we have evaluated the SUN MicroSparc CPU for possible MCM packaging based on sets of smaller dies using this approach. Cost/performance figure-of-merits are presented for various cache sizes using cost-optimized partitioning for flip-chip MCM-D packaging.
微电子系统的优化是一项涉及许多不同学科的艰巨任务。通常,一个学科的优化将导致其他领域和整个系统的次优解决方案。本文从微电子系统的微结构、封装和逻辑划分三个方面探讨了微电子系统的优化问题。这种方法将尝试通过帮助设计师探索多维解决方案空间并根据系统级成本/性能评估候选设计来确定优化设计。作为一个示范工具,我们已经评估了SUN MicroSparc CPU可能的MCM封装基于一组更小的模具使用这种方法。采用成本优化的倒装芯片MCM-D封装分区,给出了不同缓存大小的成本/性能优劣图。
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引用次数: 13
The application of silicon-on-silicon MCMs to advanced analog power controllers 硅对硅mcm在高级模拟功率控制器中的应用
Pub Date : 1996-02-06 DOI: 10.1109/MCMC.1996.510769
D. Dromgoole, Ahmad Lotfi, A. Feygenson, R. Frye, B. J. Han, K. Tai
A mixed signal power controller is implemented in a silicon-on-silicon MCM. The application is space limited, in which a discrete component implementation is physically large and costly. A large number of passive components (resistors and capacitors) are integrated into a silicon substrate with flip-chip analog ICs. Operational characteristics of the controller are verified after integration and are compared to the discrete version. High voltage isolation requirements and interference and noise issues are studied to determine the most critical portions of the MCM layout and design.
混合信号功率控制器在硅对硅MCM中实现。该应用程序空间有限,其中离散组件实现在物理上很大且成本很高。大量的无源元件(电阻器和电容器)被集成到一个硅衬底与倒装模拟ic。对集成后控制器的工作特性进行了验证,并与离散版本进行了比较。研究了高压隔离要求以及干扰和噪声问题,以确定MCM布局和设计的最关键部分。
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引用次数: 4
Fluxless flip-chip for multichip modules 用于多芯片模块的无磁倒装芯片
Pub Date : 1996-02-06 DOI: 10.1109/MCMC.1996.510766
J. Goldstein, E. A. Logan, B.S. Femandez
The no-flux, Utilitarian Solder System ("No-FUSS") flip-chip process is a versatile technique that can be used with virtually any die. The process combines Au ball bumping of the die with Pb/Sn-indium electroplating of the substrate. Previous work demonstrated that substrates electroplated with an 8 /spl mu/m indium cap over 16 /spl mu/m of 95Pb/5Sn had shown consistently reliable interconnects after thermal shock and thermal aging testing. Preliminary evaluations of samples with only 2 /spl mu/m of indium over 22 /spl mu/m of 95Pb/5Sn had shown promising results from a metallurgical viewpoint and further work was recommended. The current study compares the reliability and reproducibility of flip-chip interconnects prepared with a 2 /spl mu/m indium cap with previous data from 8 /spl mu/m samples. The results indicate that, although it is possible to produce low resistance, reliable interconnect using a 2 /spl mu/m indium layer, the process is nor yet as reproducible as the 8 /spl mu/m process and requires further development before it can be fully utilized.
无助焊剂,实用焊料系统(“No-FUSS”)倒装芯片工艺是一种通用技术,可用于几乎任何模具。该工艺结合了模具的Au球碰撞和衬底的Pb/ sn -铟电镀。先前的工作表明,在经过热冲击和热老化测试后,电镀8 /spl μ m铟帽和16 /spl μ m 95Pb/5Sn的衬底显示出一致可靠的互连。从冶金学的角度来看,对铟含量仅为2 /spl mu/m的样品和95Pb/5Sn含量为22 /spl mu/m的样品的初步评价显示出很好的结果,并建议进一步开展工作。目前的研究比较了用2 /spl μ m铟盖制备的倒装芯片互连的可靠性和可重复性,与以前8 /spl μ m样品的数据。结果表明,虽然使用2 /spl μ m铟层可以产生低电阻、可靠的互连,但该工艺的可重复性尚不如8 /spl μ m铟层,需要进一步开发才能充分利用。
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引用次数: 0
MCM-D switching units for interconnection technology validation MCM-D开关单元互连技术验证
Pub Date : 1996-02-06 DOI: 10.1109/MCMC.1996.510783
C. Truzzi, E. Beyne, E. Ringoot
Thin film Multichip Modules (MCM-D) provide a high packaging density. The short interconnection lengths on MCM-D enable high speed digital operations. The analysis of the limits of the high speed performance of such a technology is a challenging task. Individual nets on the substrate are difficult to contact during operation of the module and measuring nets using hf-probes may very well influence the operating conditions of the module. A possible solution to this problem, especially suited for digital applications, is presented here. It consists of a testing methodology focused on the characterization of the interconnection technology itself. This solution provides a way to analyze, in a real-world environment, the electrical performance of a module as a function of geometrical, technological and electrical quantities as well as circuit and system parameters. This solution can bring useful information to MCM manufacturers on the system performance and operation limits of their products, as it can be used as a benchmark to validate the interconnection technology.
薄膜多芯片模块(MCM-D)提供高封装密度。MCM-D上的短互连长度使高速数字操作成为可能。分析这种技术高速性能的极限是一项具有挑战性的任务。在模块运行期间,基板上的单个网难以接触,使用高频探头的测量网可能会对模块的运行条件产生很大影响。本文提出了一种特别适用于数字应用程序的解决方案。它包括一种测试方法,侧重于互连技术本身的特征。该解决方案提供了一种在现实环境中分析模块的电气性能作为几何,技术和电气数量以及电路和系统参数的函数的方法。该解决方案可为MCM制造商提供有关其产品的系统性能和操作限制的有用信息,并可作为验证互连技术的基准。
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引用次数: 2
Micro-machined heat pipes in silicon MCM substrates 硅MCM衬底的微机械热管
Pub Date : 1995-12-31 DOI: 10.1109/MCMC.1996.510782
D. Benson, R. Mitchell, M. Tuck, D. Adkins, D. Palmer
Multichip modules (MCMs) containing power components need a substrate with excellent heat spreading capability both to avoid hot spots and to move dissipated heat toward the system heat sinks. Polycrystalline diamond is an excellent MCM heat spreading substrate but remains several orders of magnitude too expensive and somewhat more difficult to process than conventional mother-board materials. Today's power MCMs concentrate on moderately priced silicon wafers and aluminum nitride ceramic with their improved thermal conductivity and good thermal expansion match to power semiconductor components in comparison to traditional alumina and printed wiring board materials. However even silicon and AIN substrates are challenged by designers' thermal needs. We report on the fabrication of micro-heat pipes embedded in silicon MCM substrates (5/spl times/5 cm) by the use of micromachined capillary wick structures and hermetic micro-cavities. This passive microstructure results in more than a 5 times improvement in heat spreading capability of the silicon MCM substrate over a large range of power densities and operating temperatures. Thus diamond-like cooling is possible at silicon prices.
包含功率元件的多芯片模块(mcm)需要具有出色散热能力的基板,以避免出现热点,并将散热转移到系统散热器。聚晶金刚石是一种优秀的MCM散热衬底,但仍然过于昂贵,并且比传统主板材料更难加工。今天的功率mcm集中在中等价格的硅片和氮化铝陶瓷上,与传统的氧化铝和印刷线路板材料相比,它们具有更好的导热性和良好的热膨胀性,适合功率半导体元件。然而,即使是硅和AIN衬底也受到设计师热需求的挑战。我们报道了利用微机械毛细管芯结构和密封微腔在硅MCM衬底中嵌入5/spl次/ 5cm的微热管的制造。这种无源微结构使硅MCM衬底在很大的功率密度和工作温度范围内的散热能力提高了5倍以上。因此,以硅的价格实现类似钻石的冷却是可能的。
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引用次数: 28
期刊
Proceedings 1996 IEEE Multi-Chip Module Conference (Cat. No.96CH35893)
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