Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830603
Wei-Sheng Liao, Po-Syun Chen, Chia-Ling Tsai, Chih-Lung Lin
This work proposes a simple-structure pixel circuit composed of low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) and external threshold voltage (VTH) compensation circuit shared by whole row for active-matrix organic light-emitting diode (AMOLED) displays. This proposed circuit combines parallel addressing scheme and voltage-programming method to increase compensation time for accurately detecting threshold voltage variations of driving TFT, and the voltage drop (I-R drop) in power line. Simulation results show that the relative emission current error rates are below 2.93 % and 2.62 % when variations of VTH are ± 0.5 V and VDD I-R drop is ±0.5 V, respectively, verifying that the novel pixel design has great potential for use in high resolution AMOLED displays.
{"title":"New External Compensated Circuit to Achieve Uniform OLED Luminance for High-Resolution AMOLED Displays","authors":"Wei-Sheng Liao, Po-Syun Chen, Chia-Ling Tsai, Chih-Lung Lin","doi":"10.23919/AM-FPD.2019.8830603","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830603","url":null,"abstract":"This work proposes a simple-structure pixel circuit composed of low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) and external threshold voltage (VTH) compensation circuit shared by whole row for active-matrix organic light-emitting diode (AMOLED) displays. This proposed circuit combines parallel addressing scheme and voltage-programming method to increase compensation time for accurately detecting threshold voltage variations of driving TFT, and the voltage drop (I-R drop) in power line. Simulation results show that the relative emission current error rates are below 2.93 % and 2.62 % when variations of VTH are ± 0.5 V and VDD I-R drop is ±0.5 V, respectively, verifying that the novel pixel design has great potential for use in high resolution AMOLED displays.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123355690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830597
T. Sano, Yoshiyuki Suzuri, M. Koden, Toshinao Yuki, Hitoshi Nakada, J. Kido
The efficiency and lifetime of white organic light emitting diodes (OLEDs) have now reached at sufficient level for practical use in displays and lightings. High-resolution OLED TVs can be fabricated with highly-efficient white OLEDs and color filters. There are several attractive features in white OLEDs such as non-glare, less blue-light, high color-rendering index, linear brightness control, thin and lightweight, that are great advantage for the lighting applications. In this paper, first some key technologies for highly-efficient white OLEDs are explained, and then new material challenge for next-generation OLED is discussed. In addition, the latest researches on flexible OLEDs are also shown in some photographs. Finally, well-designed lightings for Smart Mirai House are introduced.
{"title":"Organic Light Emitting Diodes for Lighting Applications","authors":"T. Sano, Yoshiyuki Suzuri, M. Koden, Toshinao Yuki, Hitoshi Nakada, J. Kido","doi":"10.23919/AM-FPD.2019.8830597","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830597","url":null,"abstract":"The efficiency and lifetime of white organic light emitting diodes (OLEDs) have now reached at sufficient level for practical use in displays and lightings. High-resolution OLED TVs can be fabricated with highly-efficient white OLEDs and color filters. There are several attractive features in white OLEDs such as non-glare, less blue-light, high color-rendering index, linear brightness control, thin and lightweight, that are great advantage for the lighting applications. In this paper, first some key technologies for highly-efficient white OLEDs are explained, and then new material challenge for next-generation OLED is discussed. In addition, the latest researches on flexible OLEDs are also shown in some photographs. Finally, well-designed lightings for Smart Mirai House are introduced.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121884399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830607
M. Zobl, A. Wagner-Gentner, Stefan Danner, Stefan Lutz
This paper gives an overview about actual and future automotive display concepts, the influence of highly automated driving, key requirements for BMW display experience and interesting future display technologies for new customer experience. An approach to evaluate technologies is described and a derived comparison between requirements for automotive and CE-device displays is shown. Finally current display technologies are rated.
{"title":"Future Display Technologies for Automotive Application","authors":"M. Zobl, A. Wagner-Gentner, Stefan Danner, Stefan Lutz","doi":"10.23919/AM-FPD.2019.8830607","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830607","url":null,"abstract":"This paper gives an overview about actual and future automotive display concepts, the influence of highly automated driving, key requirements for BMW display experience and interesting future display technologies for new customer experience. An approach to evaluate technologies is described and a derived comparison between requirements for automotive and CE-device displays is shown. Finally current display technologies are rated.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123851623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830610
Takeshi Yamada
We present the latest status of soluble OLED material development based on our conjugated polymer technology. The materials are highly suitable for printing OLED panel fabrication, especially for mid- to large-sized displays. We also show the fundamentals to secure the best performance of ink-jet (IJ) printed devices. Finally we discuss the expectation for IJP-OLED panel production from a viewpoint of its process, resolution & panel size, and performance as well as the comparison with WOLED.
{"title":"Latest Development of Soluble-OLED Material and its Application to Mid- to large-sized Panel Production","authors":"Takeshi Yamada","doi":"10.23919/AM-FPD.2019.8830610","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830610","url":null,"abstract":"We present the latest status of soluble OLED material development based on our conjugated polymer technology. The materials are highly suitable for printing OLED panel fabrication, especially for mid- to large-sized displays. We also show the fundamentals to secure the best performance of ink-jet (IJ) printed devices. Finally we discuss the expectation for IJP-OLED panel production from a viewpoint of its process, resolution & panel size, and performance as well as the comparison with WOLED.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121967940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830577
Shih-Hung Lin, Bor-Wei Liang, C. Kuan, R. Yu
We have designed an infrared photodetector which has a superlattice (SL), graded barriers and then multiple quantum wells (MQWs). The grating with fixed 2 μm period and different depth on detector was fabricated and its effects on detector’s performance was discussed. The grating with 2 μm period and 1.3 μm depth shows the highest performance. The simulation of electromagnetic distribution in structure shows the same trend as experiment results.
{"title":"Multicolor quantum well and superlattice infrared photodetector with grating structure optimization","authors":"Shih-Hung Lin, Bor-Wei Liang, C. Kuan, R. Yu","doi":"10.23919/AM-FPD.2019.8830577","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830577","url":null,"abstract":"We have designed an infrared photodetector which has a superlattice (SL), graded barriers and then multiple quantum wells (MQWs). The grating with fixed 2 μm period and different depth on detector was fabricated and its effects on detector’s performance was discussed. The grating with 2 μm period and 1.3 μm depth shows the highest performance. The simulation of electromagnetic distribution in structure shows the same trend as experiment results.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127772481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830590
M. Lin, V. Su, Shih-Lun Chen
Partially green SMPV1:PC71BM solar cells were fabricated. The power conversion efficiency (PCE) of small molecule solar cells (SM-OPVs) based on non-halogen solution can reach around 5.07%. To further enhance the performance of SM-OPVs, the active layer of optimized device is treated with the solvent vapor annealing (SVA) process before depositing the electrode. The PCE of the inverted non-halogen SM-OPV can be further improved and reach over 7.0%.
{"title":"Partially green small molecule solar cells","authors":"M. Lin, V. Su, Shih-Lun Chen","doi":"10.23919/AM-FPD.2019.8830590","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830590","url":null,"abstract":"Partially green SMPV1:PC71BM solar cells were fabricated. The power conversion efficiency (PCE) of small molecule solar cells (SM-OPVs) based on non-halogen solution can reach around 5.07%. To further enhance the performance of SM-OPVs, the active layer of optimized device is treated with the solvent vapor annealing (SVA) process before depositing the electrode. The PCE of the inverted non-halogen SM-OPV can be further improved and reach over 7.0%.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121459223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830583
H. Sai, T. Matsui
Thin crystalline silicon (c-Si) solar cells are highly attractive not only for reducing the material cost but also for realizing light-weight and flexible PV modules. Amorphous silicon/c-Si heterojunction (SHJ) architecture is suited to thin c-Si cells because of its excellent surface passivation capability. In this paper, we discuss the potential of very thin c-Si cells using the SHJ architecture.
{"title":"Challenges and prospects of very thin (<50 μm) crystalline silicon solar cells","authors":"H. Sai, T. Matsui","doi":"10.23919/AM-FPD.2019.8830583","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830583","url":null,"abstract":"Thin crystalline silicon (c-Si) solar cells are highly attractive not only for reducing the material cost but also for realizing light-weight and flexible PV modules. Amorphous silicon/c-Si heterojunction (SHJ) architecture is suited to thin c-Si cells because of its excellent surface passivation capability. In this paper, we discuss the potential of very thin c-Si cells using the SHJ architecture.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"247 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115075218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The highly-orientated zinc oxide nanorods were synthesized by chemical bath deposition methods at 95 °C. The aluminum doped zinc oxide films deposited by radio frequency magnetron sputtering were used as transparent and conductive substrates. After deposition, the zinc oxide nanorods were treated by annealing. The crystallinity of zinc oxide nanorods was enhanced by annealing. The obtained ZnO nanorods are expected for application in dye-sensitized solar cells.
{"title":"ZnO Nanorods Fabricated by Chemical Bath Deposition for Dye-sensitized Solar Cell Application","authors":"Qiang Zhang, Chaoyang Li, Taishi Nakamura, Masaya Morimoto","doi":"10.23919/AM-FPD.2019.8830574","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830574","url":null,"abstract":"The highly-orientated zinc oxide nanorods were synthesized by chemical bath deposition methods at 95 °C. The aluminum doped zinc oxide films deposited by radio frequency magnetron sputtering were used as transparent and conductive substrates. After deposition, the zinc oxide nanorods were treated by annealing. The crystallinity of zinc oxide nanorods was enhanced by annealing. The obtained ZnO nanorods are expected for application in dye-sensitized solar cells.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125127515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830601
X. Gong, Chang Xu, T. Sadoh
High-carrier-mobility thin (≤ ~50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (~50 nm) poly-GeSn films with high carrier mobility of ~300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).
{"title":"Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation","authors":"X. Gong, Chang Xu, T. Sadoh","doi":"10.23919/AM-FPD.2019.8830601","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830601","url":null,"abstract":"High-carrier-mobility thin (≤ ~50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (~50 nm) poly-GeSn films with high carrier mobility of ~300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132350382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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