Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830618
Chang-Chun Lee, Chi-Wei Wang
This study focused on the development of simulation methodology for dropping test is presented to estimate the impact of dropping load on the flexible displays. The structure design and material selection are optimized to enhance the corresponding mechanical reliability of flexible display. The simulated results is further verified as compared with the actual experimental results so as to endure the accuracy of the simulation. According to the simulation results, the proposed estimated results of flexible display characteristics would be beneficial to the designers or makers with the field of flexible displays when developing a more useful and comfortable flexible electronic products.
{"title":"Drop Impact Analysis of AMOLED Display with Buffer Designs by Using Dynamic Finite Element Simulation","authors":"Chang-Chun Lee, Chi-Wei Wang","doi":"10.23919/AM-FPD.2019.8830618","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830618","url":null,"abstract":"This study focused on the development of simulation methodology for dropping test is presented to estimate the impact of dropping load on the flexible displays. The structure design and material selection are optimized to enhance the corresponding mechanical reliability of flexible display. The simulated results is further verified as compared with the actual experimental results so as to endure the accuracy of the simulation. According to the simulation results, the proposed estimated results of flexible display characteristics would be beneficial to the designers or makers with the field of flexible displays when developing a more useful and comfortable flexible electronic products.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127925063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/am-fpd.2019.8830609
{"title":"AM-FPD 2019 Contents","authors":"","doi":"10.23919/am-fpd.2019.8830609","DOIUrl":"https://doi.org/10.23919/am-fpd.2019.8830609","url":null,"abstract":"","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125878878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830613
Geonju Yoon, Jeongsoo Kim, Donggi Shin, Kumar Mallem, Jinsu Park, Jaemin Kim, Jaehyun Cho, Sangwoo Bae, Jin-Seok Kim, Hyun-Hoo Kim, J. Yi
We report the controllable charge (Electron/hole) trapping window layer properties of atomic layer deposited (ALD) aluminum oxide (Al2O3) gate dielectric layer on the Si substrate. Electron/hole blocking mechanism was archived by controlling the Al2O3 composition, band gap and post deposition annealing affect, respectively. The chemical composition of the Al2O3 was confirmed from the X-ray photoelectron spectroscopy analysis. The capacitance-voltage (C-V) characteristic of Al/Al2O3/Si (MOS) metal-oxide-semiconductor structure showed clear accumulation, depletion and inversion regions as-compared with the Al/SiNx/Si MOS devices, respectively, From the C-V curves, the flat band voltage(ΔFB) was shifted accordingly positive and negative with respect to electron/hole trapping effect. In addition, 10 nm AlOx storage layer and SiNx storage layer were compared in the same structure. The 10 nm SiNx storage layer showed a very low retention of 55.1% and the memory window also showed a relatively low value of 2.72V at 18V.
{"title":"A study on Improvement of Electrical and Retention characteristics of Non-volatile Memory with Al2O3 Insulator","authors":"Geonju Yoon, Jeongsoo Kim, Donggi Shin, Kumar Mallem, Jinsu Park, Jaemin Kim, Jaehyun Cho, Sangwoo Bae, Jin-Seok Kim, Hyun-Hoo Kim, J. Yi","doi":"10.23919/AM-FPD.2019.8830613","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830613","url":null,"abstract":"We report the controllable charge (Electron/hole) trapping window layer properties of atomic layer deposited (ALD) aluminum oxide (Al2O3) gate dielectric layer on the Si substrate. Electron/hole blocking mechanism was archived by controlling the Al2O3 composition, band gap and post deposition annealing affect, respectively. The chemical composition of the Al2O3 was confirmed from the X-ray photoelectron spectroscopy analysis. The capacitance-voltage (C-V) characteristic of Al/Al2O3/Si (MOS) metal-oxide-semiconductor structure showed clear accumulation, depletion and inversion regions as-compared with the Al/SiNx/Si MOS devices, respectively, From the C-V curves, the flat band voltage(ΔFB) was shifted accordingly positive and negative with respect to electron/hole trapping effect. In addition, 10 nm AlOx storage layer and SiNx storage layer were compared in the same structure. The 10 nm SiNx storage layer showed a very low retention of 55.1% and the memory window also showed a relatively low value of 2.72V at 18V.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122315058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/am-fpd.2019.8830573
{"title":"AM-FPD 2019 Committees","authors":"","doi":"10.23919/am-fpd.2019.8830573","DOIUrl":"https://doi.org/10.23919/am-fpd.2019.8830573","url":null,"abstract":"","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134517539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830566
H. Fukagawa, Tsubasa Sasaki, Taku Oono, Takahisa Shimizu
Inverted organic light-emitting diodes (iOLEDs) without the use of alkali metals have attracted extensive attention owing to the demand for the realization of flexible OLEDs that do not require stringent encapsulation; however, the advantage of iOLEDs and the device physics in iOLEDs have seldom been discussed. We show the advantage of iOLEDs over the conventional OLEDs from the fact that the luminance of a conventional-OLED-based flexible display decreases rapidly, whereas our iOLED-based flexible display exhibits approximately half of its initial luminance even after about 392 d. Electrons are injected into iOLEDs effectively by utilizing the solution process and a suitable dopant that can reduce the surface work function.
{"title":"Recent Progress in Inverted OLEDs: Mechanism of Electron Injection without Use of Alkali Metals","authors":"H. Fukagawa, Tsubasa Sasaki, Taku Oono, Takahisa Shimizu","doi":"10.23919/AM-FPD.2019.8830566","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830566","url":null,"abstract":"Inverted organic light-emitting diodes (iOLEDs) without the use of alkali metals have attracted extensive attention owing to the demand for the realization of flexible OLEDs that do not require stringent encapsulation; however, the advantage of iOLEDs and the device physics in iOLEDs have seldom been discussed. We show the advantage of iOLEDs over the conventional OLEDs from the fact that the luminance of a conventional-OLED-based flexible display decreases rapidly, whereas our iOLED-based flexible display exhibits approximately half of its initial luminance even after about 392 d. Electrons are injected into iOLEDs effectively by utilizing the solution process and a suitable dopant that can reduce the surface work function.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133093241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830625
Ayata Kurasaki, Sumio Sugiski, R. Tanaka, T. Matsuda, M. Kimura
We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.
{"title":"Development of two-layered ReRAM using Ga-Sn-O thin film","authors":"Ayata Kurasaki, Sumio Sugiski, R. Tanaka, T. Matsuda, M. Kimura","doi":"10.23919/AM-FPD.2019.8830625","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830625","url":null,"abstract":"We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115224577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830611
T. Nagao, Y. Inouchi, J. Tatemichi, T. Sugawara, M. Hasumi, T. Sameshima
We report formation of low resistivity n-type doped silicon region at 300°C by the method of two-step ion implantation. Phosphorus ions with a dose of 2×1014 cm−2 at 70 keV followed by hydrogen ions with 1×1016 cm−2 at 8 keV were implanted at RT to the both surfaces of single crystalline silicon substrates. Post heating at 300°C for 90 min decreased the sheet resistivity to 417 Ω/sq. The activation ratio was estimated as 75% under the assumption of electron mobility of 50 cm2/Vs in the doped region. Moreover, the minority carrier effective lifetime (τeff) was also increased to 253 μs. This indicates a low density of surface recombination defect states of 6.4×1010 cm−2. In contrast, a high sheet resistivity of 8×104 Ω/sq and a low τeff of 64 μs resulted from a single phosphorus ion implantation with 2×1014 cm−2 at 70 keV followed by 300°C heating for 90 min. The hydrogen ion implantation probably decreased the silicon bonding energy to easily move phosphorus atoms in the silicon lattice sites at 300°C and passivated the doped region by terminating silicon dangling bonds.
{"title":"Phosphorus Followed by Hydrogen Two-Step Ion Implantation Used for Forming Low Resistivity Doped Silicon at 300°C","authors":"T. Nagao, Y. Inouchi, J. Tatemichi, T. Sugawara, M. Hasumi, T. Sameshima","doi":"10.23919/AM-FPD.2019.8830611","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830611","url":null,"abstract":"We report formation of low resistivity n-type doped silicon region at 300°C by the method of two-step ion implantation. Phosphorus ions with a dose of 2×10<sup>14</sup> cm<sup>−2</sup> at 70 keV followed by hydrogen ions with 1×10<sup>16</sup> cm<sup>−2</sup> at 8 keV were implanted at RT to the both surfaces of single crystalline silicon substrates. Post heating at 300°C for 90 min decreased the sheet resistivity to 417 Ω/sq. The activation ratio was estimated as 75% under the assumption of electron mobility of 50 cm<sup>2</sup>/Vs in the doped region. Moreover, the minority carrier effective lifetime (τ<inf>eff</inf>) was also increased to 253 μs. This indicates a low density of surface recombination defect states of 6.4×10<sup>10</sup> cm<sup>−2</sup>. In contrast, a high sheet resistivity of 8×10<sup>4</sup> Ω/sq and a low τ<inf>eff</inf> of 64 μs resulted from a single phosphorus ion implantation with 2×10<sup>14</sup> cm<sup>−2</sup> at 70 keV followed by 300°C heating for 90 min. The hydrogen ion implantation probably decreased the silicon bonding energy to easily move phosphorus atoms in the silicon lattice sites at 300°C and passivated the doped region by terminating silicon dangling bonds.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124386909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830627
Ployrung Kesorn, J. Bermundo, Naofumi Yoshida, T. Nonaka, M. Fujii, Y. Ishikawa, Y. Uraoka
Low temperature process is required to fabricate high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on plastic substrates for flexible display applications. In addition, high-k material which allows higher mobility, higher drain current and lower threshold voltage while facilitating miniaturization, is poised to replace conventional SiO2 gate insulators in TFTs. Therefore, hybrid material containing high-k BaTiO3 nanoparticles and transparent Poly-siloxane (Poly-SX) were used as gate insulator in a-IGZO TFTs. Opting for a hybrid material instead of only a BaTiO3 film enables lowering of process temperatures. This paper presents the performance of a-IGZO TFTs with solution processed hybrid gate insulators at different BaTiO3/Poly-SX ratios deposited at a lower temperature (300°C). The device shows a high mobility of 30.17 cm2/Vs, low threshold voltage of 0.4 V, and leakage current density of ~10−8 A/cm2.
在塑料衬底上制造高性能非晶In-Ga-Zn-O (a-IGZO)薄膜晶体管(TFTs)用于柔性显示应用，需要低温工艺。此外，高k材料在促进小型化的同时具有更高的迁移率、更高的漏极电流和更低的阈值电压，有望取代传统的SiO2栅极绝缘子。因此，采用含高k BaTiO3纳米粒子和透明聚硅氧烷(Poly-SX)的杂化材料作为a-IGZO TFTs的栅极绝缘体。选择混合材料而不仅仅是BaTiO3薄膜可以降低工艺温度。本文研究了在较低温度(300℃)下沉积不同BaTiO3/Poly-SX比率的溶液处理混合栅绝缘子的a- igzo TFTs的性能。该器件具有30.17 cm2/Vs的高迁移率、0.4 V的低阈值电压和~10−8 a /cm2的漏电流密度。
{"title":"Low Temperature High-k Solution Processed Hybrid Gate Insulator for High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors","authors":"Ployrung Kesorn, J. Bermundo, Naofumi Yoshida, T. Nonaka, M. Fujii, Y. Ishikawa, Y. Uraoka","doi":"10.23919/AM-FPD.2019.8830627","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830627","url":null,"abstract":"Low temperature process is required to fabricate high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on plastic substrates for flexible display applications. In addition, high-k material which allows higher mobility, higher drain current and lower threshold voltage while facilitating miniaturization, is poised to replace conventional SiO2 gate insulators in TFTs. Therefore, hybrid material containing high-k BaTiO3 nanoparticles and transparent Poly-siloxane (Poly-SX) were used as gate insulator in a-IGZO TFTs. Opting for a hybrid material instead of only a BaTiO3 film enables lowering of process temperatures. This paper presents the performance of a-IGZO TFTs with solution processed hybrid gate insulators at different BaTiO3/Poly-SX ratios deposited at a lower temperature (300°C). The device shows a high mobility of 30.17 cm2/Vs, low threshold voltage of 0.4 V, and leakage current density of ~10−8 A/cm2.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123228139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830628
Fahmi Machda, Takaya Ogawa, H. Okumura, K. Ishihara
Aluminum-doped zinc oxide (AZO) transparent electrodes prepared by radio frequency (RF) magnetron sputtering were investigated to elucidate effects of crystal growth orientations on durability of AZO films, evaluated by electrical resistivity. During the deposition, the flow of oxygen gas was 60 sccm, while argon gas was varied from 3 to 60 sccm. As the argon gas flow increased, a transition of crystal growth orientations from (110) to (002) was observed by X-ray diffractometry (XRD). Damp heat test was conducted at 85°C and 85% of relative humidity for 25 days. As a result, the AZO films prepared with higher argon (or total) gas flows having (002) main crystal growth orientation exhibited better durability.
{"title":"Effects of Sputtering Gas on Crystal Growth Orientations and Durability of Al-doped ZnO Transparent Electrodes in Harsh Environment","authors":"Fahmi Machda, Takaya Ogawa, H. Okumura, K. Ishihara","doi":"10.23919/AM-FPD.2019.8830628","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830628","url":null,"abstract":"Aluminum-doped zinc oxide (AZO) transparent electrodes prepared by radio frequency (RF) magnetron sputtering were investigated to elucidate effects of crystal growth orientations on durability of AZO films, evaluated by electrical resistivity. During the deposition, the flow of oxygen gas was 60 sccm, while argon gas was varied from 3 to 60 sccm. As the argon gas flow increased, a transition of crystal growth orientations from (110) to (002) was observed by X-ray diffractometry (XRD). Damp heat test was conducted at 85°C and 85% of relative humidity for 25 days. As a result, the AZO films prepared with higher argon (or total) gas flows having (002) main crystal growth orientation exhibited better durability.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125750887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830616
Cheng-Hsing Hsu, Po-Yu Chou, C. Tseng
Effect of thermal treatment on microstructures and electrical properties of the sol-gel derived (Ca0.8Sr0.2)ZrO3 thin films were investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. Scanning electron microscopy results show that the grain size are found to be dependent on the annealing temperature. Based on the surface structure and morphological characteristics, the thin films were sensitive to deposition conditions, such as the preheating temperature and annealing temperature. At a preheating temperature of 400°C and an annealing temperature of 700°C, the (Ca0.8Sr0.2)ZrO3 film observes a dielectric constant of 24 (f = 1 MHz), a dissipation factor of 0.21 (f = 1 MHz), and a leakage current density of 3.8×10−9 A/cm2 at an electrical field of 10 kV/cm.
{"title":"Influence of Thermal Treatment of Sol-Gel Derived (Ca0.8Sr0.2)ZrO3 Dielectric Thin Films","authors":"Cheng-Hsing Hsu, Po-Yu Chou, C. Tseng","doi":"10.23919/AM-FPD.2019.8830616","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830616","url":null,"abstract":"Effect of thermal treatment on microstructures and electrical properties of the sol-gel derived (Ca0.8Sr0.2)ZrO3 thin films were investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. Scanning electron microscopy results show that the grain size are found to be dependent on the annealing temperature. Based on the surface structure and morphological characteristics, the thin films were sensitive to deposition conditions, such as the preheating temperature and annealing temperature. At a preheating temperature of 400°C and an annealing temperature of 700°C, the (Ca0.8Sr0.2)ZrO3 film observes a dielectric constant of 24 (f = 1 MHz), a dissipation factor of 0.21 (f = 1 MHz), and a leakage current density of 3.8×10−9 A/cm2 at an electrical field of 10 kV/cm.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121755028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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