Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830592
Sehyeon Kim, Kumar Mallem, Sooyoung Park, Sanchari Chowdary, Seyoun Kim, Jinsu Park, Jamein Kim, M. Ju, Youngkuk Kim, E. Cho, Y. Cho, J. Yi
An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm−2 eV−1 and high Qeff of −1.71 × 1011 cm−2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiOX layer showed an η of 18.20 % with FF of 75.77.
{"title":"Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD","authors":"Sehyeon Kim, Kumar Mallem, Sooyoung Park, Sanchari Chowdary, Seyoun Kim, Jinsu Park, Jamein Kim, M. Ju, Youngkuk Kim, E. Cho, Y. Cho, J. Yi","doi":"10.23919/AM-FPD.2019.8830592","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830592","url":null,"abstract":"An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiO<inf>X</inf> and SiN<inf>X</inf> layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiO<inf>X</inf>/SiN<inf>X</inf> stack was optimized by varying the SiH<inf>4</inf>, NH<inf>3</inf> and N<inf>2</inf>O gas ratios. Lower D<inf>it</inf> of 5 × 10<sup>10</sup> cm<sup>−</sup><sup>2</sup> eV<sup>−</sup><sup>1</sup> and high Q<inf>eff</inf> of −1.71 × 10<sup>11</sup> cm<sup>−</sup><sup>2</sup> was obtained for 10 nm thick SiO<inf>X</inf> layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiO<inf>X</inf> layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiO<inf>X</inf> layer showed an η of 18.20 % with FF of 75.77.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131161136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830565
Hiyuto Okui, H. Kajii, M. Kondow
The characteristics of organic photodetectors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blends with various film thicknesses of active layer are investigated. The red-shift in peak wavelength of incident-photon-to-current conversion efficiency (IPCE) spectra in the devices with various film thicknesses is observed with increasing film thickness. For thick devices upon irradiation by light with a photon energy of around energy gap of an active layer, excitons are formed almost uniformly because of the small absorption coefficient of red light. A conventional device with 2 μm-thick film exhibits narrow-band light detection with red-light sensitivity and the relatively narrow spectral response of the full-width at half-maximum (FWMH) of around 50 nm. On the other hand, an inverted device with 2 μm-thick film exhibits broadband light detection. For bulk heterostructure devices, one of important factors to realize the narrowband light detection is the control of charge carrier collection efficiency at electrodes which is attributed to the device structure, including the intrachain transport in polymer.
{"title":"Effect of Device Structure on the Narrow-band Light Detection of Bulk Heterostructure Organic Photodetectors based on Poly(3-hexylthiophene) and Fullerene Derivative","authors":"Hiyuto Okui, H. Kajii, M. Kondow","doi":"10.23919/AM-FPD.2019.8830565","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830565","url":null,"abstract":"The characteristics of organic photodetectors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blends with various film thicknesses of active layer are investigated. The red-shift in peak wavelength of incident-photon-to-current conversion efficiency (IPCE) spectra in the devices with various film thicknesses is observed with increasing film thickness. For thick devices upon irradiation by light with a photon energy of around energy gap of an active layer, excitons are formed almost uniformly because of the small absorption coefficient of red light. A conventional device with 2 μm-thick film exhibits narrow-band light detection with red-light sensitivity and the relatively narrow spectral response of the full-width at half-maximum (FWMH) of around 50 nm. On the other hand, an inverted device with 2 μm-thick film exhibits broadband light detection. For bulk heterostructure devices, one of important factors to realize the narrowband light detection is the control of charge carrier collection efficiency at electrodes which is attributed to the device structure, including the intrachain transport in polymer.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132137681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830602
N. Saito, T. Sawabe, J. Kataoka, Tomomasa Ueda, T. Tezuka, K. Ikeda
We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility (>30 cm2/Vs) and reduction of source/drain (S/D) parasitic resistance by 75% were achieved by InZnO FET. Analysis of a Schottky barrier height at S/D contact and a band offset between oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originated from a lowering of conduction band minimum by InZnO channel. Moreover, ultralow (<10−20 A/μm) off-state leakage current characteristics including not only S/D leakage current but also gate leakage current were confirmed to maintain even at thin gate insulator with an equivalent oxide thickness of 6.2 nm.
{"title":"High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application","authors":"N. Saito, T. Sawabe, J. Kataoka, Tomomasa Ueda, T. Tezuka, K. Ikeda","doi":"10.23919/AM-FPD.2019.8830602","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830602","url":null,"abstract":"We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility (>30 cm2/Vs) and reduction of source/drain (S/D) parasitic resistance by 75% were achieved by InZnO FET. Analysis of a Schottky barrier height at S/D contact and a band offset between oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originated from a lowering of conduction band minimum by InZnO channel. Moreover, ultralow (<10−20 A/μm) off-state leakage current characteristics including not only S/D leakage current but also gate leakage current were confirmed to maintain even at thin gate insulator with an equivalent oxide thickness of 6.2 nm.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115436408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830619
Liu Jinquan, Yang Shengjie, Ye Zhou
This paper presents the automotive display trends from Tianma point of view and introduces Tianma’s understanding for the trends and directions we will go hopefully that can offer more values to the automotive market which is now at the door of automotive industry’s next transition which includes the application of network, electrical force and autonomous driving etc.
{"title":"Automotive Display Trend and Tianma’s Directions","authors":"Liu Jinquan, Yang Shengjie, Ye Zhou","doi":"10.23919/AM-FPD.2019.8830619","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830619","url":null,"abstract":"This paper presents the automotive display trends from Tianma point of view and introduces Tianma’s understanding for the trends and directions we will go hopefully that can offer more values to the automotive market which is now at the door of automotive industry’s next transition which includes the application of network, electrical force and autonomous driving etc.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"30 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128649674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830615
K. Kudo, M. Sakai
Organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in large area and flexible sensor devices. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on any substrate. Moreover, their electronic properties can be easily tuned to optimize, charges transport depending on the targeted application in the field of imaging, tactile or biomedical sensing. We made curved surface sensor array by thermal molding of planer device array on thin plastic film.
{"title":"Flexible Information and Sensing Devices Fabricated by Printing Process","authors":"K. Kudo, M. Sakai","doi":"10.23919/AM-FPD.2019.8830615","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830615","url":null,"abstract":"Organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in large area and flexible sensor devices. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on any substrate. Moreover, their electronic properties can be easily tuned to optimize, charges transport depending on the targeted application in the field of imaging, tactile or biomedical sensing. We made curved surface sensor array by thermal molding of planer device array on thin plastic film.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130174009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830587
T. Mori, Satoru Aoyama, Yoshiyuki Seike
In organic light-emitting diodes (OLEDs), the roll-off phenomenon was observed in the EL efficiency - current density characteristics. Although the EL efficiency in the inverted OLED with HAT-CN was 1.5–2 times higher than that in the inverted OLED with MoOx, the former maximum EL efficiency was observed in the higher current density. On the other hand, the EL efficiency in the inverted OLEDs decreased rapidly after the maximum as compared with the conventional OLED. The roll-off was thought to depend on carrier injections.
{"title":"Correlation between Roll-Off Phenomena and Carrier Injections for OLEDs","authors":"T. Mori, Satoru Aoyama, Yoshiyuki Seike","doi":"10.23919/AM-FPD.2019.8830587","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830587","url":null,"abstract":"In organic light-emitting diodes (OLEDs), the roll-off phenomenon was observed in the EL efficiency - current density characteristics. Although the EL efficiency in the inverted OLED with HAT-CN was 1.5–2 times higher than that in the inverted OLED with MoOx, the former maximum EL efficiency was observed in the higher current density. On the other hand, the EL efficiency in the inverted OLEDs decreased rapidly after the maximum as compared with the conventional OLED. The roll-off was thought to depend on carrier injections.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131079946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830594
S. Visal, M. Shahiduzzaman, M. Kuniyoshi, T. Kaneko, T. Katsumata, S. Iwamori, K. Tomita, M. Isomura
Electron transport layer (ETL) is well known as a crucial factor that affects power conversion efficiency (PCE) of perovskite solar cells (PSCs). Low temperature process on ETL has been highly considered for the future of low cost and roll to roll process in mass production of PSCs industrialization. Herein, we demonstrate the low-temperature (<180 °C) processes of pure phase, single crystalline brookite TiO2 nanoparticle (BK TiO2 NPs) layer as an ETL of PSCs, followed by different concentrations of TiCl4 treatment (20mM, 40mM, 60mM and 80mM). By using BK TiO2 NPs with the low temperature process (<180 °C), our device exhibited the highest power conversion efficiency of 15.49% in planar-type PSCs, indicating that the BK TiO2 NPs layer is a new candidate of ETL that can be fabricated in low temperature processes. The optimized TiCl4 concentration is 40mM for the surface treatment of BK TiO2 NPs, which results in the enhancement of PCE, reproducibility and the supression of hysteresis. Probably, the 40mM of TiCl4 treatment improves the interface between the perovskite and BK TiO2 NPs layers and promotes the efficient charge extraction. Thus, the present work is expected to provide an important technology to realize the low-cost planar PSCs produced in entire low-temperature processes.
{"title":"Efficient Planar Perovskite Solar Cells with Entire Low-Temperature Processes via Brookite TiO2 Nanoparticle Electron Transport Layer","authors":"S. Visal, M. Shahiduzzaman, M. Kuniyoshi, T. Kaneko, T. Katsumata, S. Iwamori, K. Tomita, M. Isomura","doi":"10.23919/AM-FPD.2019.8830594","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830594","url":null,"abstract":"Electron transport layer (ETL) is well known as a crucial factor that affects power conversion efficiency (PCE) of perovskite solar cells (PSCs). Low temperature process on ETL has been highly considered for the future of low cost and roll to roll process in mass production of PSCs industrialization. Herein, we demonstrate the low-temperature (<180 °C) processes of pure phase, single crystalline brookite TiO2 nanoparticle (BK TiO2 NPs) layer as an ETL of PSCs, followed by different concentrations of TiCl4 treatment (20mM, 40mM, 60mM and 80mM). By using BK TiO2 NPs with the low temperature process (<180 °C), our device exhibited the highest power conversion efficiency of 15.49% in planar-type PSCs, indicating that the BK TiO2 NPs layer is a new candidate of ETL that can be fabricated in low temperature processes. The optimized TiCl4 concentration is 40mM for the surface treatment of BK TiO2 NPs, which results in the enhancement of PCE, reproducibility and the supression of hysteresis. Probably, the 40mM of TiCl4 treatment improves the interface between the perovskite and BK TiO2 NPs layers and promotes the efficient charge extraction. Thus, the present work is expected to provide an important technology to realize the low-cost planar PSCs produced in entire low-temperature processes.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133904896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830622
S. Ito
Organic methyl ammonium lead halide crystal (e.g. CH3NH3PbI3) can be Perovskite structure with good semiconductor characteristics for solar cells over 24% photoenergy conversion efficiency. The significant point of the perovskite crystal is that it can be prepared by printing methods on substrates (e.g. spin coating, doctor blading, ink jet printing and so on). However, the physical phenomena of perovskite solar cells are still not clear for the higher conversion efficiency and higher stability against circumstances. In order to manage the issues, synchrotron soft X-ray can be a quite strong tool for the analysis. In this conference, the points about how to use synchrotron soft X-ray on perovskite solar cells will be discussed.
{"title":"How to use Synchrotron Soft X-Ray for Analysis of Perovskite Solar Cell","authors":"S. Ito","doi":"10.23919/AM-FPD.2019.8830622","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830622","url":null,"abstract":"Organic methyl ammonium lead halide crystal (e.g. CH3NH3PbI3) can be Perovskite structure with good semiconductor characteristics for solar cells over 24% photoenergy conversion efficiency. The significant point of the perovskite crystal is that it can be prepared by printing methods on substrates (e.g. spin coating, doctor blading, ink jet printing and so on). However, the physical phenomena of perovskite solar cells are still not clear for the higher conversion efficiency and higher stability against circumstances. In order to manage the issues, synchrotron soft X-ray can be a quite strong tool for the analysis. In this conference, the points about how to use synchrotron soft X-ray on perovskite solar cells will be discussed.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125034579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/am-fpd.2019.8830626
Cheolmin Park
A novel interactive skin display with epidermal stimuli electrode (ISDEE) is demonstrated, allowing for the simultaneous sensing and display of multiple epidermal stimuli on a single device. It is based on a simple two-layer architecture on an elastomeric polymer composite with light-emitting inorganic phosphors, upon which two electrodes are placed with a certain parallel gap. The ISDEE is directly mounted on human skin, which by itself serves as a field-responsive floating electrode of the display operating under AC. The AC field exerted on the epidermal skin layer depends on the conductance of the skin, which can be modulated based on a variety of physiological skin factors, such as the temperature, sweat gland activity, and pressure.
{"title":"Interactive Skin Display with Epidermal Stimuli Electrode","authors":"Cheolmin Park","doi":"10.23919/am-fpd.2019.8830626","DOIUrl":"https://doi.org/10.23919/am-fpd.2019.8830626","url":null,"abstract":"A novel interactive skin display with epidermal stimuli electrode (ISDEE) is demonstrated, allowing for the simultaneous sensing and display of multiple epidermal stimuli on a single device. It is based on a simple two-layer architecture on an elastomeric polymer composite with light-emitting inorganic phosphors, upon which two electrodes are placed with a certain parallel gap. The ISDEE is directly mounted on human skin, which by itself serves as a field-responsive floating electrode of the display operating under AC. The AC field exerted on the epidermal skin layer depends on the conductance of the skin, which can be modulated based on a variety of physiological skin factors, such as the temperature, sweat gland activity, and pressure.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116477840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-01DOI: 10.23919/AM-FPD.2019.8830564
Hoon Kim, Bin Zhu, Rajesh Vaddi, Ming-Huang Huang, R. Manley
The feasibility of single Cu layer as bottom gate electrode for large display devices is proposed with adding a thin Cu-Mn alloy as adhesion layer on Corning EAGLE XG® glass substrate. This thin < 10 nm Cu-Mn alloy layer is converted to a pure Cu after annealing by Mn-diffusion to glass. Thus, this stack behaves as a single Cu layer in terms of process. The lowest resistivity of 500 nm Cu stack with 10 nm of 0.5 at.% Mn in the Cu alloy is <1.8 μOhm-cm, and it passed 3 N tape adhesion test after annealing at 300 °C for 60 seconds.
{"title":"Single-layer Cu Gate Electrode for Large Display Devices","authors":"Hoon Kim, Bin Zhu, Rajesh Vaddi, Ming-Huang Huang, R. Manley","doi":"10.23919/AM-FPD.2019.8830564","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830564","url":null,"abstract":"The feasibility of single Cu layer as bottom gate electrode for large display devices is proposed with adding a thin Cu-Mn alloy as adhesion layer on Corning EAGLE XG® glass substrate. This thin < 10 nm Cu-Mn alloy layer is converted to a pure Cu after annealing by Mn-diffusion to glass. Thus, this stack behaves as a single Cu layer in terms of process. The lowest resistivity of 500 nm Cu stack with 10 nm of 0.5 at.% Mn in the Cu alloy is <1.8 μOhm-cm, and it passed 3 N tape adhesion test after annealing at 300 °C for 60 seconds.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121388102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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