Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316282
Yansong Song, S. Tong
The compound-axis APT servo control system is the important unit and key technology of the system of space laser communication, the fine tracking subsystem is further suppress the vibration residuals of the coarse tracking subsystem, it decides tracking accuracy of the whole servo system. This paper analyzes the impact of fine tracking error factor, and the characteristics of sources of error from the image detection and servo algorithm have been both optimized, We have built an experimental system in the laboratory and carried out experimental tests, In the simulation of satellite vibration condition can realize the tracking precision about 0.8μrad. The successful implementation of the sub-micro-radian dynamic tracking, Technological foundation for free space laser communication systems to achieve long-distance communications.
{"title":"Sub micro radian fine tracking system optimization design","authors":"Yansong Song, S. Tong","doi":"10.1109/ICOOM.2012.6316282","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316282","url":null,"abstract":"The compound-axis APT servo control system is the important unit and key technology of the system of space laser communication, the fine tracking subsystem is further suppress the vibration residuals of the coarse tracking subsystem, it decides tracking accuracy of the whole servo system. This paper analyzes the impact of fine tracking error factor, and the characteristics of sources of error from the image detection and servo algorithm have been both optimized, We have built an experimental system in the laboratory and carried out experimental tests, In the simulation of satellite vibration condition can realize the tracking precision about 0.8μrad. The successful implementation of the sub-micro-radian dynamic tracking, Technological foundation for free space laser communication systems to achieve long-distance communications.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115950827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316316
Qiang Lu, Xiaowei Liu
This paper presents a structure of a fourth-order cascaded full feed-forward Sigma-delta modulator. Because there is no feedback but only feed-forward path between two stages, cascaded sigma-delta modulator is unnecessary to consider the stability problems, and has the identical performance with ideal high-order single-loop sigma-delta modulator. The system level simulation results show that the signal to noise rate (SNR) of the designed sigma-delta modulator is 148 and the effective number of bits (ENOB) is 24.4 when the oversampling ratio (OSR) is 128.
{"title":"A fourth-order cascaded full feed-forward sigma-delta modulator","authors":"Qiang Lu, Xiaowei Liu","doi":"10.1109/ICOOM.2012.6316316","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316316","url":null,"abstract":"This paper presents a structure of a fourth-order cascaded full feed-forward Sigma-delta modulator. Because there is no feedback but only feed-forward path between two stages, cascaded sigma-delta modulator is unnecessary to consider the stability problems, and has the identical performance with ideal high-order single-loop sigma-delta modulator. The system level simulation results show that the signal to noise rate (SNR) of the designed sigma-delta modulator is 148 and the effective number of bits (ENOB) is 24.4 when the oversampling ratio (OSR) is 128.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132122258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316343
B. Jia, Qiongying Lv, H. Mokbel, Yuan Wan
We developed a new type of 3D measurement system for large scale object or outdoor measurement which enabled us to obtain successive 3D range data applied superior integration technology. An object for computer 3D point clouds requires two following information: range information and 3 dimensions coordinate of each point about this object. We proposed superior integration technology using two mainly sensors: laser rangefinder and 2 axis compass. In this paper, we use a living example that measured a wind power tower outside to show how to get morphology of large scale object. In addition, large scale object have to be measured stay outside which may be very large extent. So we use the wireless transmission of multi-serial port technology to solve the problems that the venues are too large and the wires are too much.
{"title":"Reaserch on precision measurment for large scale 3D surface based on superior integration","authors":"B. Jia, Qiongying Lv, H. Mokbel, Yuan Wan","doi":"10.1109/ICOOM.2012.6316343","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316343","url":null,"abstract":"We developed a new type of 3D measurement system for large scale object or outdoor measurement which enabled us to obtain successive 3D range data applied superior integration technology. An object for computer 3D point clouds requires two following information: range information and 3 dimensions coordinate of each point about this object. We proposed superior integration technology using two mainly sensors: laser rangefinder and 2 axis compass. In this paper, we use a living example that measured a wind power tower outside to show how to get morphology of large scale object. In addition, large scale object have to be measured stay outside which may be very large extent. So we use the wireless transmission of multi-serial port technology to solve the problems that the venues are too large and the wires are too much.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124138454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316206
Fang Chen, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Shanshan Tian, Y. Zou, Mei Li, Xiao-hui Ma
The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S2Cl2) and ammonium sulfide ((NH4)2S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S2Cl2 comparing to (NH4)2S solution, meanwhile, quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S2Cl2 passivation dramatically improves the stability against reoxidation in air compared with the (NH4)2S solution. We found that S2Cl2 method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S2Cl2-passivated sample was higher than (NH4)2S-passivated sample, and stability of S2Cl2-passivated sample was also more sustained. Overall, S2Cl2 provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.
{"title":"Study on the properties of gallium antimonide surface passivatied with S2Cl2 solution","authors":"Fang Chen, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Shanshan Tian, Y. Zou, Mei Li, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316206","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316206","url":null,"abstract":"The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S<sub>2</sub>Cl<sub>2</sub>) and ammonium sulfide ((NH<sub>4</sub>)<sub>2</sub>S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S<sub>2</sub>Cl<sub>2</sub> comparing to (NH<sub>4</sub>)<sub>2</sub>S solution, meanwhile, quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S<sub>2</sub>Cl<sub>2</sub> passivation dramatically improves the stability against reoxidation in air compared with the (NH<sub>4</sub>)<sub>2</sub>S solution. We found that S<sub>2</sub>Cl<sub>2</sub> method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S<sub>2</sub>Cl<sub>2</sub>-passivated sample was higher than (NH<sub>4</sub>)<sub>2</sub>S-passivated sample, and stability of S<sub>2</sub>Cl<sub>2</sub>-passivated sample was also more sustained. Overall, S<sub>2</sub>Cl<sub>2</sub> provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124402487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316220
L. Jin, Y. Zou, Xiao-hui Ma, Zibin Yang, Zhiwei Xue, Yueyue Jin, Li Xu, Qingxue Sui, Wei Zhao, Zhimin Zhang
Pump technology is one of the key technologies of the fiber laser and is directly related to the output power of fiber laser. This paper focuses on high-power fiber laser pumping technology. The pump models of end-pumped and multi-point side pumped were established by MATLAB. The influence of power distribution in fiber on the number and position of pumping points were investigated. The results can provide ideas for the optimization of power distribution in fiber laser.
{"title":"Simulation and optimization of pump technology on high-power fiber laser","authors":"L. Jin, Y. Zou, Xiao-hui Ma, Zibin Yang, Zhiwei Xue, Yueyue Jin, Li Xu, Qingxue Sui, Wei Zhao, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316220","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316220","url":null,"abstract":"Pump technology is one of the key technologies of the fiber laser and is directly related to the output power of fiber laser. This paper focuses on high-power fiber laser pumping technology. The pump models of end-pumped and multi-point side pumped were established by MATLAB. The influence of power distribution in fiber on the number and position of pumping points were investigated. The results can provide ideas for the optimization of power distribution in fiber laser.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114960528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316327
Xiaowei Liu, Honglin Xu, Jiajun Zhou, Song Chen, Jiang Yang
This paper presents an improved full differential low-voltage fourth-order Ong-band-pass sigma-delta modulator (Ong-BPSDM, proposed by Adrian K. Ong firstly) using a novel resonator based on Salo architecture. Compared with the reported Ong-BPSDM, the proposed fourth-order Ong-BPSDM utilizing a novel double-sampling and double-delay resonator which only needs one op-amp has a better performance with a lower capacitive load and lower power consumption. The performance specifications of the blocks of BPSDM are confirmed by building the behavior model of the system scheme in the environment of Simulink. The circuits are simulated through TSMC0.18μm CMOS process. The modulator achieves a peak signal to noise ratio (SNR) 85.5dB and DR 87dB in the center frequency 20MHz for a 200 KHz bandwidth. The power consumption of the circuits is as low as 27 mW with a 1.8V supply.
本文提出了一种改进的全差分低压四阶Ong带通σ - δ调制器(Ong- bpsdm，由Adrian K. Ong首先提出)，该调制器采用一种基于Salo结构的新型谐振器。与已有的Ong-BPSDM相比，本文提出的四阶Ong-BPSDM采用一种新型双采样双延时谐振腔，只需要一个运放，具有更低的容性负载和更低的功耗。通过在Simulink环境下建立系统方案的行为模型，确定了BPSDM各模块的性能指标。采用TSMC0.18μm CMOS工艺对电路进行仿真。该调制器在200 KHz带宽下，在中心频率20MHz处峰值信噪比为85.5dB, DR为87dB。电路的功耗低至27mw，电源为1.8V。
{"title":"An improved fourth-order band-pass sigma-delta modulator with a novel resonator","authors":"Xiaowei Liu, Honglin Xu, Jiajun Zhou, Song Chen, Jiang Yang","doi":"10.1109/ICOOM.2012.6316327","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316327","url":null,"abstract":"This paper presents an improved full differential low-voltage fourth-order Ong-band-pass sigma-delta modulator (Ong-BPSDM, proposed by Adrian K. Ong firstly) using a novel resonator based on Salo architecture. Compared with the reported Ong-BPSDM, the proposed fourth-order Ong-BPSDM utilizing a novel double-sampling and double-delay resonator which only needs one op-amp has a better performance with a lower capacitive load and lower power consumption. The performance specifications of the blocks of BPSDM are confirmed by building the behavior model of the system scheme in the environment of Simulink. The circuits are simulated through TSMC0.18μm CMOS process. The modulator achieves a peak signal to noise ratio (SNR) 85.5dB and DR 87dB in the center frequency 20MHz for a 200 KHz bandwidth. The power consumption of the circuits is as low as 27 mW with a 1.8V supply.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128708412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316291
A. Roshdy, Y. Lin, Che-Lun Su, H. Mokbel, Tongyu Wang
Instead of conventional proportional integral (PI) controller, non-linear fuzzy proportional integral (NLFPI) controller is proposed to control an inertially stabilized platform. The strategy is to start with a tuned, conventional PI controller that achieve a certain desired performance, replace it with an equivalent linear fuzzy proportional integral (LFPI) controller, and finally convert the linear fuzzy controller to nonlinear fuzzy controller. The system performance and robustness are investigated. Simulation results demonstrate the effectiveness of the designed controller, which offers an excellent performance and robustness in the presence of uncertainty and nonlinearity.
{"title":"Design and performance of non-linear fuzzy logic PI controller for line of sight stabilized platform","authors":"A. Roshdy, Y. Lin, Che-Lun Su, H. Mokbel, Tongyu Wang","doi":"10.1109/ICOOM.2012.6316291","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316291","url":null,"abstract":"Instead of conventional proportional integral (PI) controller, non-linear fuzzy proportional integral (NLFPI) controller is proposed to control an inertially stabilized platform. The strategy is to start with a tuned, conventional PI controller that achieve a certain desired performance, replace it with an equivalent linear fuzzy proportional integral (LFPI) controller, and finally convert the linear fuzzy controller to nonlinear fuzzy controller. The system performance and robustness are investigated. Simulation results demonstrate the effectiveness of the designed controller, which offers an excellent performance and robustness in the presence of uncertainty and nonlinearity.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129950613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316205
Yunhua Wang, Lu Zhou, Baoshan Jia, Duanyuan Bai, Xu Yang, Xin Gao, B. Bo
In this paper, GaAs substrate samples were treated by different Ar ion plasma cleaning process, and then a SiO2 passivation layer was deposited by radio frequency magnetron sputtering to avoid reoxidation or recontamination of the surface. Morphology, composition and fluorescence properties of GaAs substrate surface were investigated respectively by scanning electron microscope, energy dispersive X-ray spectrometer and rapid photoluminescence mapper. The results showed that GaAs samples treated under the condition of sputtering power 8W, chamber pressure 4.7Pa, Ar flow rate 40sccm and cleaning time 48min are free from damage, the oxygen and carbon content on the sample surface decreased obviously. Photoluminescence (PL) intensity increased by 66.73 %.
{"title":"The effect of argon plasma cleaning on the surface characteristics of GaAs substrate","authors":"Yunhua Wang, Lu Zhou, Baoshan Jia, Duanyuan Bai, Xu Yang, Xin Gao, B. Bo","doi":"10.1109/ICOOM.2012.6316205","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316205","url":null,"abstract":"In this paper, GaAs substrate samples were treated by different Ar ion plasma cleaning process, and then a SiO2 passivation layer was deposited by radio frequency magnetron sputtering to avoid reoxidation or recontamination of the surface. Morphology, composition and fluorescence properties of GaAs substrate surface were investigated respectively by scanning electron microscope, energy dispersive X-ray spectrometer and rapid photoluminescence mapper. The results showed that GaAs samples treated under the condition of sputtering power 8W, chamber pressure 4.7Pa, Ar flow rate 40sccm and cleaning time 48min are free from damage, the oxygen and carbon content on the sample surface decreased obviously. Photoluminescence (PL) intensity increased by 66.73 %.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126434950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316344
Zhiyuan Sun, Wei Zhu
A comparison study on temperature measurement precision between middlewave 3-5μm and longwave 8-12μm measuring thermal imaging systems has been conducted. The study was limited to systems working in indoor conditions and the target's temperature is in the range of 270K~900K. First, the Disturb Resisting Function (DRF) of infrared systems is deduced. On the base of DRF curve, we find that the middlewave infrared system get the smaller influences under the same size disturb compared with the longwave system. A theory of the influence of target's physical characteristic and measurement conditions on the accuracy of temperature measurements has been developed. On the basis of the developed formulas an analysis of the influence of signal disturbances (because of incorrectly assumed emissivity, limited transmittance of the atmosphere, radiation reflected by the object and shift of optics radiation) on the accuracy of temperature measurement has been made. It has been found that the middlewave systems in typical temperature range offer generally better accuracy in temperature measurement than the longwave ones do.
{"title":"Comparison of radiation temperature measurement precision between middlewave and longwave thermal-imaging systems","authors":"Zhiyuan Sun, Wei Zhu","doi":"10.1109/ICOOM.2012.6316344","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316344","url":null,"abstract":"A comparison study on temperature measurement precision between middlewave 3-5μm and longwave 8-12μm measuring thermal imaging systems has been conducted. The study was limited to systems working in indoor conditions and the target's temperature is in the range of 270K~900K. First, the Disturb Resisting Function (DRF) of infrared systems is deduced. On the base of DRF curve, we find that the middlewave infrared system get the smaller influences under the same size disturb compared with the longwave system. A theory of the influence of target's physical characteristic and measurement conditions on the accuracy of temperature measurements has been developed. On the basis of the developed formulas an analysis of the influence of signal disturbances (because of incorrectly assumed emissivity, limited transmittance of the atmosphere, radiation reflected by the object and shift of optics radiation) on the accuracy of temperature measurement has been made. It has been found that the middlewave systems in typical temperature range offer generally better accuracy in temperature measurement than the longwave ones do.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116658264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316244
Qijie Huang, T. Yu, Jifeng Zu, M. Tao
Based on the finite-difference method, a typical Tm-doped double-clad fiber amplifier modeling is comprehensively analyzed through the rate equations and propagation equations. The impacting factors such as amplified spontaneous emission (ASE), wavelength and power of the seed, fiber length, pumping power and fiber facet reflectivity are discussed. Simulation results show that there exist the most suitable fiber length and pump power while the amplifier has the maximum output power and the best signal to noise ratio. Moreover, the influence of ASE can be effectively inhibited by reducing the fiber facet reflectivity, especially the front fiber facet reflectivity, choosing the proper seed wavelength and increasing the seed power. The theoretical models and simulation results presented in this paper have a certain reference value for the design and development of high-power Tm-doped double-clad fiber amplifiers.
{"title":"Theoretical modeling and simulation of Tm-doped double-clad fiber amplifier","authors":"Qijie Huang, T. Yu, Jifeng Zu, M. Tao","doi":"10.1109/ICOOM.2012.6316244","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316244","url":null,"abstract":"Based on the finite-difference method, a typical Tm-doped double-clad fiber amplifier modeling is comprehensively analyzed through the rate equations and propagation equations. The impacting factors such as amplified spontaneous emission (ASE), wavelength and power of the seed, fiber length, pumping power and fiber facet reflectivity are discussed. Simulation results show that there exist the most suitable fiber length and pump power while the amplifier has the maximum output power and the best signal to noise ratio. Moreover, the influence of ASE can be effectively inhibited by reducing the fiber facet reflectivity, especially the front fiber facet reflectivity, choosing the proper seed wavelength and increasing the seed power. The theoretical models and simulation results presented in this paper have a certain reference value for the design and development of high-power Tm-doped double-clad fiber amplifiers.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122688818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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