Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316217
Donghan Wei, S. Du, Ting Gao, Yon-Sup Pang, Bo Zhao, Hui Li, Y. Qu
The traditional annular electrode structure vertical cavity surface emitting semiconductor lasers (VCESL), the operating current injected into the active region is only in the very narrow channel of the annular edge of the area, make the distribution of the device internal thermal field uneven, affecting the output characteristic of the device. In this paper, present a new type of petaline electrode structure, form a number of independent emitting hole, making the device internal thermal field even, output characteristic of the device is improved remarkably. Active region is GaAs/Al0.3Ga0.7As three quantum well structure growing by molecular beam epitaxy (MBE), using the gradual change structure of AlGaAs as DBR. Prepare annular electrode and petaline electrode with the same process in the same epitaxial wafer. At the same time, analyzed internal thermal field distribution of this two kinds of different electrode structure by ANSYS finite element thermal analysis software. Through the analysis and calculation, we know, the Rthjc of new petaline electrode structure is 3.78°C/W, the Rthjc of traditional annular electrode structure is 4.78°C/W, thermal characteristic and stability of new petaline electrode structure are better than traditional annular electrode structure obviously.
{"title":"Thermal characteristic analysis of new structure in 850nm VCSEL","authors":"Donghan Wei, S. Du, Ting Gao, Yon-Sup Pang, Bo Zhao, Hui Li, Y. Qu","doi":"10.1109/ICOOM.2012.6316217","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316217","url":null,"abstract":"The traditional annular electrode structure vertical cavity surface emitting semiconductor lasers (VCESL), the operating current injected into the active region is only in the very narrow channel of the annular edge of the area, make the distribution of the device internal thermal field uneven, affecting the output characteristic of the device. In this paper, present a new type of petaline electrode structure, form a number of independent emitting hole, making the device internal thermal field even, output characteristic of the device is improved remarkably. Active region is GaAs/Al0.3Ga0.7As three quantum well structure growing by molecular beam epitaxy (MBE), using the gradual change structure of AlGaAs as DBR. Prepare annular electrode and petaline electrode with the same process in the same epitaxial wafer. At the same time, analyzed internal thermal field distribution of this two kinds of different electrode structure by ANSYS finite element thermal analysis software. Through the analysis and calculation, we know, the Rthjc of new petaline electrode structure is 3.78°C/W, the Rthjc of traditional annular electrode structure is 4.78°C/W, thermal characteristic and stability of new petaline electrode structure are better than traditional annular electrode structure obviously.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132635855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316233
Yue Zhang, Te Li, Rong Chen, Yuzhi Wang, Guojun Liu, E. Hao
Anti-guiding layers of asymmetric heterostructure for 100μm-wide-strip GaAs/AlGaAs quantum-well semiconductor lasers emitting at a wavelength of 808 nm are analyzed and calculated theoretically. Choosing three cases of Al-content of antiguiding layer in the active region [containing quantum well (QW) and waveguides], we calculate and analyze the dependences of optical confinement factor, threshold current, maximal output power and vertical beam divergence angle on the thickness of the antiguiding layer, separately. According to the results, when the thickness of antiguiding layer is constant, the higher the Al-content is the greater on performance of device is; when the Al-content in antiguiding layer is constant, the effect on performance of device enlarged with the increase of thickness of antiguiding layer.
{"title":"Investigation of refractive index antiguiding structure for asymmetric heterostructure semiconductor laser","authors":"Yue Zhang, Te Li, Rong Chen, Yuzhi Wang, Guojun Liu, E. Hao","doi":"10.1109/ICOOM.2012.6316233","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316233","url":null,"abstract":"Anti-guiding layers of asymmetric heterostructure for 100μm-wide-strip GaAs/AlGaAs quantum-well semiconductor lasers emitting at a wavelength of 808 nm are analyzed and calculated theoretically. Choosing three cases of Al-content of antiguiding layer in the active region [containing quantum well (QW) and waveguides], we calculate and analyze the dependences of optical confinement factor, threshold current, maximal output power and vertical beam divergence angle on the thickness of the antiguiding layer, separately. According to the results, when the thickness of antiguiding layer is constant, the higher the Al-content is the greater on performance of device is; when the Al-content in antiguiding layer is constant, the effect on performance of device enlarged with the increase of thickness of antiguiding layer.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132834454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316239
O. Helal, Y. Tan, Yunfeng Ding, H. Cai
Calculation of the different efficiency parameters of a pulsed solid-state laser is illustrated arithmetically to get efficiency factor and system slope efficiency. The calculated efficiencies are compared with those obtained from experimental work. The design of the pumping chamber is illustrated. Optical resonator losses are got experimentally in details. Different efficiency factors inside laser system are mentioned and how calculate them to get the efficiency factor and system slope efficiency also done. The present system has energy output of 160mJ and pulse width of 100 μ sec for efficiency factor 2.84% and system slope efficiency 1.36%. The combined loss inside resonator is 0.243.
{"title":"Different efficiency mechanisms inside solid-state laser: Calculation and experimental work","authors":"O. Helal, Y. Tan, Yunfeng Ding, H. Cai","doi":"10.1109/ICOOM.2012.6316239","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316239","url":null,"abstract":"Calculation of the different efficiency parameters of a pulsed solid-state laser is illustrated arithmetically to get efficiency factor and system slope efficiency. The calculated efficiencies are compared with those obtained from experimental work. The design of the pumping chamber is illustrated. Optical resonator losses are got experimentally in details. Different efficiency factors inside laser system are mentioned and how calculate them to get the efficiency factor and system slope efficiency also done. The present system has energy output of 160mJ and pulse width of 100 μ sec for efficiency factor 2.84% and system slope efficiency 1.36%. The combined loss inside resonator is 0.243.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116889823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316303
Dongbo Wang, S. Jiao, Sujuan Sun, Liancheng Zhao
High crystalline quality Al0.40 In0.02Ga0.58N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al0.40 In0.02Ga0.58N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 e V. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.
{"title":"Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection","authors":"Dongbo Wang, S. Jiao, Sujuan Sun, Liancheng Zhao","doi":"10.1109/ICOOM.2012.6316303","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316303","url":null,"abstract":"High crystalline quality Al0.40 In0.02Ga0.58N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al0.40 In0.02Ga0.58N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 e V. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131281304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316312
Bo Wang, Mei Li, Ruikai Lian, Q. Zhu
Based on the third-order aberration theory and paraxial formula, the null test theory is derived. And after using the ZEMAX software to optimize the optical path, a more simple and convenience testing technology is discussed with a diameter of 60 mm convex paraboloid lens. Compared with traditional testing method, it doesn't need expensive testing equipment. The practice shows that this method not only promotes work efficiency but also reduces the cost of test, at the same time, the PV of parabolic surface of the lens reaches λ/5 after fulfillment.
{"title":"Fabrication and testing of convex conic aspheric surface","authors":"Bo Wang, Mei Li, Ruikai Lian, Q. Zhu","doi":"10.1109/ICOOM.2012.6316312","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316312","url":null,"abstract":"Based on the third-order aberration theory and paraxial formula, the null test theory is derived. And after using the ZEMAX software to optimize the optical path, a more simple and convenience testing technology is discussed with a diameter of 60 mm convex paraboloid lens. Compared with traditional testing method, it doesn't need expensive testing equipment. The practice shows that this method not only promotes work efficiency but also reduces the cost of test, at the same time, the PV of parabolic surface of the lens reaches λ/5 after fulfillment.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131974652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316257
Jian-Yu She, Yun-Da Li, Qi Li, Qi Wang
To measure the weak reflection characteristics of certain objects, a 2.52 THz electrically controlled object reflectivity measurement plan based on a THz laser and a cell detector has been proposed. The measurement theory was introduced. The solutions of the measurement errors caused by manual control, different object thicknesses, placed position and asynchronous signal have been also presented.
{"title":"A 2.52 THz electrically controlled object reflectivity measurement plan","authors":"Jian-Yu She, Yun-Da Li, Qi Li, Qi Wang","doi":"10.1109/ICOOM.2012.6316257","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316257","url":null,"abstract":"To measure the weak reflection characteristics of certain objects, a 2.52 THz electrically controlled object reflectivity measurement plan based on a THz laser and a cell detector has been proposed. The measurement theory was introduced. The solutions of the measurement errors caused by manual control, different object thicknesses, placed position and asynchronous signal have been also presented.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134466077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316227
Yu Tian, Li Xu, Zhiwei Xue, Zhipeng Wei, Fei Yu, Zou Yonggang, Xiao-hui Ma, Wei Zhao, Qingxue Sui, Zhimin Zhang
AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.
{"title":"Coupled distributed bragg reflector for high brightness red light-emitting diodes","authors":"Yu Tian, Li Xu, Zhiwei Xue, Zhipeng Wei, Fei Yu, Zou Yonggang, Xiao-hui Ma, Wei Zhao, Qingxue Sui, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316227","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316227","url":null,"abstract":"AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133118573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316297
Bo Wang, S. Kou
In this paper we perform a comparative investigation on the quantum correlation and quantum entanglement between the electron and the nucleus in the lithium atom in the presence of magnetic field both for zero temperature case and finite temperature case. The quantum correlation and quantum entanglement are quantified by quantum discord and negativity respectively. It is found that compared with negativity, the quantum discord shows quite different behaviors at the same temperatures and magnetic fields. The quantum discord is more robust than quantum entanglement, so it is expected to be more useful in the processing of quantum information and quantum computation.
{"title":"Thermal state quantum correlation in lithium atom","authors":"Bo Wang, S. Kou","doi":"10.1109/ICOOM.2012.6316297","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316297","url":null,"abstract":"In this paper we perform a comparative investigation on the quantum correlation and quantum entanglement between the electron and the nucleus in the lithium atom in the presence of magnetic field both for zero temperature case and finite temperature case. The quantum correlation and quantum entanglement are quantified by quantum discord and negativity respectively. It is found that compared with negativity, the quantum discord shows quite different behaviors at the same temperatures and magnetic fields. The quantum discord is more robust than quantum entanglement, so it is expected to be more useful in the processing of quantum information and quantum computation.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"80 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113970341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316281
C. Zhong, Yalin Ding, Jinbao Fu
When the airborne platform, where installed the optical window, is in high Mach flight condition. The aerodynamic heating effect, which will influence optical properties of optical window, becomes very obvious. This special flight condition will change shape, refractive index and also refractive index distribution of optical window due to the generated high axial temperature gradient. To ensure image quality of aerial remote sensor, the present paper does thermal-optical analysis for optical window under high Mach flight condition. Then, on this basis, do simulations according to theoretical analysis and boundary conditions derived from practical assumptions in order to get the final conclusions.
{"title":"Thermal-optical analysis for optical window under high Mach flight condition","authors":"C. Zhong, Yalin Ding, Jinbao Fu","doi":"10.1109/ICOOM.2012.6316281","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316281","url":null,"abstract":"When the airborne platform, where installed the optical window, is in high Mach flight condition. The aerodynamic heating effect, which will influence optical properties of optical window, becomes very obvious. This special flight condition will change shape, refractive index and also refractive index distribution of optical window due to the generated high axial temperature gradient. To ensure image quality of aerial remote sensor, the present paper does thermal-optical analysis for optical window under high Mach flight condition. Then, on this basis, do simulations according to theoretical analysis and boundary conditions derived from practical assumptions in order to get the final conclusions.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123960909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316214
Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma
The high power laser diode bars have many advantages over conventional lasers of similar power levels. However, the poor beam quality of its output beam hinders its direct applications. The technologies for beam shaping of the high power laser diode bars have become a hot topic. In this paper the applications and the progress of high power high brightness fiber coupled laser diode are discussed.
{"title":"A survey of the high power high brightness fiber coupled laser diode","authors":"Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316214","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316214","url":null,"abstract":"The high power laser diode bars have many advantages over conventional lasers of similar power levels. However, the poor beam quality of its output beam hinders its direct applications. The technologies for beam shaping of the high power laser diode bars have become a hot topic. In this paper the applications and the progress of high power high brightness fiber coupled laser diode are discussed.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"311 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121211544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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