Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316251
Xiao-lin Sui, S. Zhou, Nian-jiang Chen, Hong Zhao, Lin Geng, Chang-dong Cao, Zi-heng Yan, W. Xiong
Recent advances in fiber optic component technology and digital processing components have enabled the development of a new coherent doppler lidar (CDL) system based upon a fiber optic FMCW, which has small size and light weight. CDL can give high precision velocity measurements data and range measurements data which support space craft safe landing. We designed and implemented a CDL of all-fiber structure in this article. First of all, FMCW ranging theory was described. Second, the CDL architecture of the system was discussed. Last, we introduced radar fiber Coupling and signal processor part, which include signal acquisition hardware, signal processing of dedicated FFT based on FPGA. The experimental program and experimental results were presented in the paper. We analyzed the experimental results carefully. From the results, the project has the advantage of large velocimetry range (-100m/S~+100m/S) and high velocimetry accuracy (0.5%). It completely meted the requirement of Space Craft Safe Landing.
{"title":"All fiber coherent doppler lidar for space craft safe landing","authors":"Xiao-lin Sui, S. Zhou, Nian-jiang Chen, Hong Zhao, Lin Geng, Chang-dong Cao, Zi-heng Yan, W. Xiong","doi":"10.1109/ICOOM.2012.6316251","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316251","url":null,"abstract":"Recent advances in fiber optic component technology and digital processing components have enabled the development of a new coherent doppler lidar (CDL) system based upon a fiber optic FMCW, which has small size and light weight. CDL can give high precision velocity measurements data and range measurements data which support space craft safe landing. We designed and implemented a CDL of all-fiber structure in this article. First of all, FMCW ranging theory was described. Second, the CDL architecture of the system was discussed. Last, we introduced radar fiber Coupling and signal processor part, which include signal acquisition hardware, signal processing of dedicated FFT based on FPGA. The experimental program and experimental results were presented in the paper. We analyzed the experimental results carefully. From the results, the project has the advantage of large velocimetry range (-100m/S~+100m/S) and high velocimetry accuracy (0.5%). It completely meted the requirement of Space Craft Safe Landing.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127989655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316335
Q. Duanmu, Ye Li, Shencheng Fu, Guozheng Wang, De Song, Xin Wang, Xulei Qin
In the third-generation image tube, the input surface of microchannel plate (MCP) is typically coated with an ultra-thin dielectric film, called the ion barrier film (IBF), to prevent ions generated in MCP during operation from migrating back to the photocathode and damaging the activation layer of photocathode, and prolong the operation lifetime. But IBF will serves as a scattering center for electron signal and reduce the signal-to-noise (SNR) of the image tube. In this paper, we present overviews of the IBF roles in third-generation image tubes, and the results of Monte-Carlo simulation on electron transmission through the Al2O3 dielectric film with varying electron energy and film thickness. We also calculated and analyzed the noise factors of Al2O3 IBF by Monte-Carlo simulation and the quantum noise model. A method of Temporal Domain Segmentation was proposed for statistical calculation. The results show the noise factor of IBF from quantum noise model is 1.07-1.28 at working voltage of 500-800V, and the one from Monte Carlo Simulation is 1.6-2.6.
{"title":"Effects of ion barrier film on image noise in generation III image tube","authors":"Q. Duanmu, Ye Li, Shencheng Fu, Guozheng Wang, De Song, Xin Wang, Xulei Qin","doi":"10.1109/ICOOM.2012.6316335","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316335","url":null,"abstract":"In the third-generation image tube, the input surface of microchannel plate (MCP) is typically coated with an ultra-thin dielectric film, called the ion barrier film (IBF), to prevent ions generated in MCP during operation from migrating back to the photocathode and damaging the activation layer of photocathode, and prolong the operation lifetime. But IBF will serves as a scattering center for electron signal and reduce the signal-to-noise (SNR) of the image tube. In this paper, we present overviews of the IBF roles in third-generation image tubes, and the results of Monte-Carlo simulation on electron transmission through the Al2O3 dielectric film with varying electron energy and film thickness. We also calculated and analyzed the noise factors of Al2O3 IBF by Monte-Carlo simulation and the quantum noise model. A method of Temporal Domain Segmentation was proposed for statistical calculation. The results show the noise factor of IBF from quantum noise model is 1.07-1.28 at working voltage of 500-800V, and the one from Monte Carlo Simulation is 1.6-2.6.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123007682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316204
Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo
This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.
{"title":"Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films","authors":"Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo","doi":"10.1109/ICOOM.2012.6316204","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316204","url":null,"abstract":"This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126682138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316223
Yueyue Jin, Y. Zou, Xiao-hui Ma, Jie Li, Yang Li, L. Jin, Li Xu, Wei Zhao, Qingxue Sui, Zhimin Zhang
Recently, many researches are focus on multi-beams combining technology, which is an effective method to realize high power and high brightness for laser diode, so it has the widely application in industry. This paper present the incoherent beam combining technology of laser diode, including space beam combining, wavelength beam combining and polarization beam combining. All of these technologies will be simulated by using tracepro, and a beam combining model will be constructed in principle, the advantages and disadvantages will be analysised, then the application field will be discussed.
{"title":"Study on laser diode incoherent beam combining technology based on tracepro","authors":"Yueyue Jin, Y. Zou, Xiao-hui Ma, Jie Li, Yang Li, L. Jin, Li Xu, Wei Zhao, Qingxue Sui, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316223","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316223","url":null,"abstract":"Recently, many researches are focus on multi-beams combining technology, which is an effective method to realize high power and high brightness for laser diode, so it has the widely application in industry. This paper present the incoherent beam combining technology of laser diode, including space beam combining, wavelength beam combining and polarization beam combining. All of these technologies will be simulated by using tracepro, and a beam combining model will be constructed in principle, the advantages and disadvantages will be analysised, then the application field will be discussed.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126960044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316237
G. Zhou, Xuesong Zhang, Jun Cai
Diode laser driver's performance directly affects the output stability and life of laser device. A design method of 100W high power fiber coupled diode laser module driver is described under 40°C high-temperature environment in this paper, and its main contents include: constant-current source design, TEC double direction temperature controller, corresponding MCU controller and protection circuit design. The diode laser driver achieves the following functions: output current can be continuously adjusted from 0-45A; Current control accuracy is better than 2%; Range of temperature control is +15°C-+35°C; and temperature control precision is 0.5°C.
{"title":"Design of high-power diode laser driver under high-temperature environment","authors":"G. Zhou, Xuesong Zhang, Jun Cai","doi":"10.1109/ICOOM.2012.6316237","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316237","url":null,"abstract":"Diode laser driver's performance directly affects the output stability and life of laser device. A design method of 100W high power fiber coupled diode laser module driver is described under 40°C high-temperature environment in this paper, and its main contents include: constant-current source design, TEC double direction temperature controller, corresponding MCU controller and protection circuit design. The diode laser driver achieves the following functions: output current can be continuously adjusted from 0-45A; Current control accuracy is better than 2%; Range of temperature control is +15°C-+35°C; and temperature control precision is 0.5°C.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126260638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316229
X. Zheng, Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma
This paper analyzes the damage mechanism of the semiconductor laser cavity surface. Catastrophic optical damage (COD) is one of major mechanisms, which drastically limits laser lifetime and emitted optical power. This paper builds the theoretical model that based on heat source with injection current and optical power to describe the temperature distribution of laser. Through analyzing the edge-emitting semiconductor lasers by using ANSYS, we can describe change of facet temperature distribution before and after the COD events. Through the results of simulation, we can get the conclusion that the main reason of COD is oxidation of the semiconductor laser in facet which caused by optical absorption.
{"title":"Analysis simulation of facet temperature in semiconductor lasers","authors":"X. Zheng, Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316229","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316229","url":null,"abstract":"This paper analyzes the damage mechanism of the semiconductor laser cavity surface. Catastrophic optical damage (COD) is one of major mechanisms, which drastically limits laser lifetime and emitted optical power. This paper builds the theoretical model that based on heat source with injection current and optical power to describe the temperature distribution of laser. Through analyzing the edge-emitting semiconductor lasers by using ANSYS, we can describe change of facet temperature distribution before and after the COD events. Through the results of simulation, we can get the conclusion that the main reason of COD is oxidation of the semiconductor laser in facet which caused by optical absorption.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126697108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316303
Dongbo Wang, S. Jiao, Sujuan Sun, Liancheng Zhao
High crystalline quality Al0.40 In0.02Ga0.58N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al0.40 In0.02Ga0.58N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 e V. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.
{"title":"Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection","authors":"Dongbo Wang, S. Jiao, Sujuan Sun, Liancheng Zhao","doi":"10.1109/ICOOM.2012.6316303","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316303","url":null,"abstract":"High crystalline quality Al0.40 In0.02Ga0.58N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al0.40 In0.02Ga0.58N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 e V. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131281304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316297
Bo Wang, S. Kou
In this paper we perform a comparative investigation on the quantum correlation and quantum entanglement between the electron and the nucleus in the lithium atom in the presence of magnetic field both for zero temperature case and finite temperature case. The quantum correlation and quantum entanglement are quantified by quantum discord and negativity respectively. It is found that compared with negativity, the quantum discord shows quite different behaviors at the same temperatures and magnetic fields. The quantum discord is more robust than quantum entanglement, so it is expected to be more useful in the processing of quantum information and quantum computation.
{"title":"Thermal state quantum correlation in lithium atom","authors":"Bo Wang, S. Kou","doi":"10.1109/ICOOM.2012.6316297","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316297","url":null,"abstract":"In this paper we perform a comparative investigation on the quantum correlation and quantum entanglement between the electron and the nucleus in the lithium atom in the presence of magnetic field both for zero temperature case and finite temperature case. The quantum correlation and quantum entanglement are quantified by quantum discord and negativity respectively. It is found that compared with negativity, the quantum discord shows quite different behaviors at the same temperatures and magnetic fields. The quantum discord is more robust than quantum entanglement, so it is expected to be more useful in the processing of quantum information and quantum computation.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"80 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113970341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316281
C. Zhong, Yalin Ding, Jinbao Fu
When the airborne platform, where installed the optical window, is in high Mach flight condition. The aerodynamic heating effect, which will influence optical properties of optical window, becomes very obvious. This special flight condition will change shape, refractive index and also refractive index distribution of optical window due to the generated high axial temperature gradient. To ensure image quality of aerial remote sensor, the present paper does thermal-optical analysis for optical window under high Mach flight condition. Then, on this basis, do simulations according to theoretical analysis and boundary conditions derived from practical assumptions in order to get the final conclusions.
{"title":"Thermal-optical analysis for optical window under high Mach flight condition","authors":"C. Zhong, Yalin Ding, Jinbao Fu","doi":"10.1109/ICOOM.2012.6316281","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316281","url":null,"abstract":"When the airborne platform, where installed the optical window, is in high Mach flight condition. The aerodynamic heating effect, which will influence optical properties of optical window, becomes very obvious. This special flight condition will change shape, refractive index and also refractive index distribution of optical window due to the generated high axial temperature gradient. To ensure image quality of aerial remote sensor, the present paper does thermal-optical analysis for optical window under high Mach flight condition. Then, on this basis, do simulations according to theoretical analysis and boundary conditions derived from practical assumptions in order to get the final conclusions.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123960909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316214
Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma
The high power laser diode bars have many advantages over conventional lasers of similar power levels. However, the poor beam quality of its output beam hinders its direct applications. The technologies for beam shaping of the high power laser diode bars have become a hot topic. In this paper the applications and the progress of high power high brightness fiber coupled laser diode are discussed.
{"title":"A survey of the high power high brightness fiber coupled laser diode","authors":"Zaijin Li, Te Li, P. Lu, Yong Wang, Y. Zou, Y. Qu, B. Bo, Guojun Liu, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316214","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316214","url":null,"abstract":"The high power laser diode bars have many advantages over conventional lasers of similar power levels. However, the poor beam quality of its output beam hinders its direct applications. The technologies for beam shaping of the high power laser diode bars have become a hot topic. In this paper the applications and the progress of high power high brightness fiber coupled laser diode are discussed.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"311 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121211544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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