Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316210
Y. Lang, Zhipeng Wei, Y. Zou, Mei Li, Y. Hao, Z. Li, Guojun Liu, Xiao-hui Ma, Jinhua Li, X. Fang, F. Fang, Shanshan Tian
In this paper, the oxide layer of surface of GaSb could be removed by passivation solution. Moreover, different passivation solution have different passivation effect. After passivation treatment, the PL intensity was enlarged. Then the influence of prove passivation time on the intensity of PL was also discussed. When passivation time was 270s, the sample's intensity of PL was the strongest. Additionally, this passivation treatment could improve the whole substrate's PL intensity.
{"title":"The optical characterization of GaSb treatment by sodium sulfide solution","authors":"Y. Lang, Zhipeng Wei, Y. Zou, Mei Li, Y. Hao, Z. Li, Guojun Liu, Xiao-hui Ma, Jinhua Li, X. Fang, F. Fang, Shanshan Tian","doi":"10.1109/ICOOM.2012.6316210","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316210","url":null,"abstract":"In this paper, the oxide layer of surface of GaSb could be removed by passivation solution. Moreover, different passivation solution have different passivation effect. After passivation treatment, the PL intensity was enlarged. Then the influence of prove passivation time on the intensity of PL was also discussed. When passivation time was 270s, the sample's intensity of PL was the strongest. Additionally, this passivation treatment could improve the whole substrate's PL intensity.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116367382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316239
O. Helal, Y. Tan, Yunfeng Ding, H. Cai
Calculation of the different efficiency parameters of a pulsed solid-state laser is illustrated arithmetically to get efficiency factor and system slope efficiency. The calculated efficiencies are compared with those obtained from experimental work. The design of the pumping chamber is illustrated. Optical resonator losses are got experimentally in details. Different efficiency factors inside laser system are mentioned and how calculate them to get the efficiency factor and system slope efficiency also done. The present system has energy output of 160mJ and pulse width of 100 μ sec for efficiency factor 2.84% and system slope efficiency 1.36%. The combined loss inside resonator is 0.243.
{"title":"Different efficiency mechanisms inside solid-state laser: Calculation and experimental work","authors":"O. Helal, Y. Tan, Yunfeng Ding, H. Cai","doi":"10.1109/ICOOM.2012.6316239","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316239","url":null,"abstract":"Calculation of the different efficiency parameters of a pulsed solid-state laser is illustrated arithmetically to get efficiency factor and system slope efficiency. The calculated efficiencies are compared with those obtained from experimental work. The design of the pumping chamber is illustrated. Optical resonator losses are got experimentally in details. Different efficiency factors inside laser system are mentioned and how calculate them to get the efficiency factor and system slope efficiency also done. The present system has energy output of 160mJ and pulse width of 100 μ sec for efficiency factor 2.84% and system slope efficiency 1.36%. The combined loss inside resonator is 0.243.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116889823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316222
X. Shan, Jun Zhang, H. Peng, Xihong Fu, Yun Liu, Lijun Wang
With the advantages of small volume, light weight, high efficiency and long lifespan, diode laser has been widely applied to industrial processing. Presently, for laser used as processing light source needs to amount to dozens of KW per cm2 of power density, how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing, 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output, coupling efficiency at 90%, 1×1mm2 of light spot through experiments, which enables diode laser to be directly applied to cladding, welding and so on.
{"title":"KW-output high beam quality diode laser array source","authors":"X. Shan, Jun Zhang, H. Peng, Xihong Fu, Yun Liu, Lijun Wang","doi":"10.1109/ICOOM.2012.6316222","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316222","url":null,"abstract":"With the advantages of small volume, light weight, high efficiency and long lifespan, diode laser has been widely applied to industrial processing. Presently, for laser used as processing light source needs to amount to dozens of KW per cm2 of power density, how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing, 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output, coupling efficiency at 90%, 1×1mm2 of light spot through experiments, which enables diode laser to be directly applied to cladding, welding and so on.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114699026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316236
Ke-rong Gai, Lin Li, Jinlong Zhao, Yong Wang, Te Li, P. Lu, Chang Su, Z. Li, Guojun Liu
The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.
{"title":"The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm","authors":"Ke-rong Gai, Lin Li, Jinlong Zhao, Yong Wang, Te Li, P. Lu, Chang Su, Z. Li, Guojun Liu","doi":"10.1109/ICOOM.2012.6316236","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316236","url":null,"abstract":"The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124660143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316322
Xianhui Shao, Xiaowei Liu, Haifeng Zhang
How to protect the fresh water sources is one of the principal problems in the human society, and obviously the industrial sewerage is the main pollution source. However, some water quality monitoring systems based on WSN have been done; we found that the traditional WSN nods have a disadvantage of short-distance communication among the nods, which limits the application in monitoring the industrial sewerage. In this paper, we describe a new monitoring system, which is based on the ZigBee network, the RF front circuit and the dynamic routing, in order to realize long-distance communication among the nods and real-time monitoring. This system described is general, extensible, self-organized and adaptive, with large area overlay and excellent compatibility.
{"title":"Monitoring system of sewerage treatment based on wireless network","authors":"Xianhui Shao, Xiaowei Liu, Haifeng Zhang","doi":"10.1109/ICOOM.2012.6316322","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316322","url":null,"abstract":"How to protect the fresh water sources is one of the principal problems in the human society, and obviously the industrial sewerage is the main pollution source. However, some water quality monitoring systems based on WSN have been done; we found that the traditional WSN nods have a disadvantage of short-distance communication among the nods, which limits the application in monitoring the industrial sewerage. In this paper, we describe a new monitoring system, which is based on the ZigBee network, the RF front circuit and the dynamic routing, in order to realize long-distance communication among the nods and real-time monitoring. This system described is general, extensible, self-organized and adaptive, with large area overlay and excellent compatibility.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121433202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316224
G. Jin, Peng Xu, Yingjie Zhao, L. Wan, Botao Hao, Xiaoguang Li, Yusi Zhao
This paper provide a new method of elevator overspeed measurement. Helium-Neon laser is mounted vertically on the surface of the elevator car. One-dimensional photodiode array(PDA) is installed at the top of the shaft. The laser beam passes through the beam shaping lens for good homogeneity and proper divergence angle. According to the total height of shaft and the divergence angle θ=0.4mrad, the spot radii in different heights of elevator car are measured. On the basis of small divergence angle a model proposed that the beam radii change linearly with the heights of elevator car. The interval in adjacent detection units is determined in this model. The laser spot is spreading from center to edge when the elevator car is moving down. The time interval of signals in adjacent detection units are measured by timing circuit. When the elevator is running in maximal speed, the time interval of signals is defined as time threshold. Time intervals of signals are compared with time threshold. Time intervals of signals are greater than time threshold that elevator running normally, time intervals of signals are less than t0 that elevator overspeed.
{"title":"Laser and one-dimensional PDA on the elevator overspeed measuring","authors":"G. Jin, Peng Xu, Yingjie Zhao, L. Wan, Botao Hao, Xiaoguang Li, Yusi Zhao","doi":"10.1109/ICOOM.2012.6316224","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316224","url":null,"abstract":"This paper provide a new method of elevator overspeed measurement. Helium-Neon laser is mounted vertically on the surface of the elevator car. One-dimensional photodiode array(PDA) is installed at the top of the shaft. The laser beam passes through the beam shaping lens for good homogeneity and proper divergence angle. According to the total height of shaft and the divergence angle θ=0.4mrad, the spot radii in different heights of elevator car are measured. On the basis of small divergence angle a model proposed that the beam radii change linearly with the heights of elevator car. The interval in adjacent detection units is determined in this model. The laser spot is spreading from center to edge when the elevator car is moving down. The time interval of signals in adjacent detection units are measured by timing circuit. When the elevator is running in maximal speed, the time interval of signals is defined as time threshold. Time intervals of signals are compared with time threshold. Time intervals of signals are greater than time threshold that elevator running normally, time intervals of signals are less than t0 that elevator overspeed.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316235
Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han
We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.
{"title":"The design of short wavelength light emitting diodes","authors":"Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han","doi":"10.1109/ICOOM.2012.6316235","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316235","url":null,"abstract":"We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129733538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316299
Zhangwen Mao, Lifang Du, D. Hu, Yong Wang, N. Yu
Patterned sapphire with frustum of a cone shape is designed to grow ZnO nanoflower arrays in this paper. The ZnO nanostructures are grown by two-step approach, including the synthesis of homo-seed layer and the growth of ZnO nanostructures in aqueous solutions at low temperature. The as-prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). ZnO nanostructures are grown along the upper base and sidewall region on the frustum of a cone shaped sapphire forming flower-like morphology as a whole. Micro-Raman spectrum shows the nanoflower arrays are under low tensile stress. Meanwhile, the ZnO nanoflower arrays grown on patterned sapphire show high photocatalytic activity. The large-scale periodical flower-like characteristics make them also potential applications in ultra-sensitive gas sensing, exciton based photonic devices.
{"title":"Synthesis of ZnO nanoflower arrays on patterned sapphire by aqueous solutions","authors":"Zhangwen Mao, Lifang Du, D. Hu, Yong Wang, N. Yu","doi":"10.1109/ICOOM.2012.6316299","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316299","url":null,"abstract":"Patterned sapphire with frustum of a cone shape is designed to grow ZnO nanoflower arrays in this paper. The ZnO nanostructures are grown by two-step approach, including the synthesis of homo-seed layer and the growth of ZnO nanostructures in aqueous solutions at low temperature. The as-prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). ZnO nanostructures are grown along the upper base and sidewall region on the frustum of a cone shaped sapphire forming flower-like morphology as a whole. Micro-Raman spectrum shows the nanoflower arrays are under low tensile stress. Meanwhile, the ZnO nanoflower arrays grown on patterned sapphire show high photocatalytic activity. The large-scale periodical flower-like characteristics make them also potential applications in ultra-sensitive gas sensing, exciton based photonic devices.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129870696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316242
Wenjing Li, Ji Wang, Guiqi Liu, Guozheng Wang, Kai Chen, Linlin Lin, Yang Liu, Y. Liu
A gain-switched Ytterbium-doped double-cladding fiber laser pumped by a laser diode was presented. A diode laser with wavelength of 966nm and output power of 25W was adopted as the pump source. 11-meter long Yb-doped double-cladding fiber was used as gain medium. The output power and the pulse waveform of the laser were measured under different pulse width and different repetition frequency. The output power of the gain-switched fiber laser was 2.67W when the repetition frequency was 50Hz and the pulse width was 10ms, the corresponding conversion efficiency from light to light was 16.9%.
{"title":"A LD pumped gain switched Yb3+ doped double-cladding fiber laser","authors":"Wenjing Li, Ji Wang, Guiqi Liu, Guozheng Wang, Kai Chen, Linlin Lin, Yang Liu, Y. Liu","doi":"10.1109/ICOOM.2012.6316242","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316242","url":null,"abstract":"A gain-switched Ytterbium-doped double-cladding fiber laser pumped by a laser diode was presented. A diode laser with wavelength of 966nm and output power of 25W was adopted as the pump source. 11-meter long Yb-doped double-cladding fiber was used as gain medium. The output power and the pulse waveform of the laser were measured under different pulse width and different repetition frequency. The output power of the gain-switched fiber laser was 2.67W when the repetition frequency was 50Hz and the pulse width was 10ms, the corresponding conversion efficiency from light to light was 16.9%.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131185445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/ICOOM.2012.6316267
Y. Liu, Lei Chen, S. Tong, Yansong Song, Yan Dong
In the paper, we obtained that the response of the FSM on the order of kHz sinusoidal perturbation signal has serious distortion, in the case of increasing the frequency of the disturbance signal, and the phase delay of AOD response is only 1% for kHz sinusoidal perturbation signal in the fine tracking unit of free space laser communication through the analysis, modeling, simulation and a series of work. It shows that by using AOD replace traditional FSM in the precision tracking system, its bandwidth can be improved largely, then, it has a further suppression of the residual error and obtains a higher tracking accuracy.
{"title":"Technology research of fine tracking unit based on AOD for laser communication","authors":"Y. Liu, Lei Chen, S. Tong, Yansong Song, Yan Dong","doi":"10.1109/ICOOM.2012.6316267","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316267","url":null,"abstract":"In the paper, we obtained that the response of the FSM on the order of kHz sinusoidal perturbation signal has serious distortion, in the case of increasing the frequency of the disturbance signal, and the phase delay of AOD response is only 1% for kHz sinusoidal perturbation signal in the fine tracking unit of free space laser communication through the analysis, modeling, simulation and a series of work. It shows that by using AOD replace traditional FSM in the precision tracking system, its bandwidth can be improved largely, then, it has a further suppression of the residual error and obtains a higher tracking accuracy.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124786291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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