Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472409
C. Shah, W. Withayachumnankul, S. Hanham, S. Maier, W. Rowe, M. Bhaskaran, S. Sriram, A. Mitchell
A chain of complementary split ring resonators (CSRRs) operating at terahertz frequencies have the potential to sustain surface plasmon polaritons (SPPs). As a first step, the transmission spectra of a 2D periodic array of scaled CSRRs operating at terahertz frequencies were obtained. A second investigation, explored the effect of a polydimethylsiloxane (PDMS) substrate on the resonance of CSRRs. These simulations confirm the strong resonance of the CSRRs and their potential for supporting SPPs.
{"title":"Design and analysis of a metasurface for supporting spoof surface plasmon polaritons","authors":"C. Shah, W. Withayachumnankul, S. Hanham, S. Maier, W. Rowe, M. Bhaskaran, S. Sriram, A. Mitchell","doi":"10.1109/COMMAD.2012.6472409","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472409","url":null,"abstract":"A chain of complementary split ring resonators (CSRRs) operating at terahertz frequencies have the potential to sustain surface plasmon polaritons (SPPs). As a first step, the transmission spectra of a 2D periodic array of scaled CSRRs operating at terahertz frequencies were obtained. A second investigation, explored the effect of a polydimethylsiloxane (PDMS) substrate on the resonance of CSRRs. These simulations confirm the strong resonance of the CSRRs and their potential for supporting SPPs.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130722837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472384
I. Khodasevych, G. Kostovski, W. Rowe, A. Mitchell
In this paper we present a microfabricated mesh substrate for use in gravitational magnetoelastic metamaterials. The high resolution technique allows the manipulation of the electromagnetic properties of the substrate towards free space-like performance. This is achieved via removal of predetermined substrate areas while simultaneously shaping the required mechanical features.
{"title":"Mesh substrate for gravitational magnetoelastic metamaterial","authors":"I. Khodasevych, G. Kostovski, W. Rowe, A. Mitchell","doi":"10.1109/COMMAD.2012.6472384","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472384","url":null,"abstract":"In this paper we present a microfabricated mesh substrate for use in gravitational magnetoelastic metamaterials. The high resolution technique allows the manipulation of the electromagnetic properties of the substrate towards free space-like performance. This is achieved via removal of predetermined substrate areas while simultaneously shaping the required mechanical features.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115636247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472348
A. Ameruddin, H. Tan, H. Fonseka, Q. Gao, J. Wong-Leung, P. Parkinson, S. Breuer, C. Jagadish
InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.
{"title":"Influence of growth temperature and V/III ratio on Au-assisted InxGa1−xAs nanowires","authors":"A. Ameruddin, H. Tan, H. Fonseka, Q. Gao, J. Wong-Leung, P. Parkinson, S. Breuer, C. Jagadish","doi":"10.1109/COMMAD.2012.6472348","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472348","url":null,"abstract":"InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114962855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472388
K. Wang, P. Amiri
Using collective spins or nanomagnets offers the possibility of constructing high speed nonvolatile electronics, resulting in the energy dissipation at the device level possibly approaching the fundamental equilibrium Maxwell-Shannon-Landaur limit. This paper will describe the progress in energy-efficient MgO-based magnetic tunnel junction (MTJ) bits for high-speed spin-transfer-torque magnetoresistive random access memory (STT-MRAM). Furthermore, the possibility of a Magnetoelectric RAM (MeRAM) as a promising candidate for ultralow power is discussed. Demonstrated principles and experiments of voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric field offer much reduced switching energy at high speed. The latter may enable a new paradigm of high speed nonvolatile electronics.
{"title":"Spintronics for instant-on nonvolatile electronics","authors":"K. Wang, P. Amiri","doi":"10.1109/COMMAD.2012.6472388","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472388","url":null,"abstract":"Using collective spins or nanomagnets offers the possibility of constructing high speed nonvolatile electronics, resulting in the energy dissipation at the device level possibly approaching the fundamental equilibrium Maxwell-Shannon-Landaur limit. This paper will describe the progress in energy-efficient MgO-based magnetic tunnel junction (MTJ) bits for high-speed spin-transfer-torque magnetoresistive random access memory (STT-MRAM). Furthermore, the possibility of a Magnetoelectric RAM (MeRAM) as a promising candidate for ultralow power is discussed. Demonstrated principles and experiments of voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric field offer much reduced switching energy at high speed. The latter may enable a new paradigm of high speed nonvolatile electronics.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117167565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472387
G. Putrino, M. Martyniuk, A. Keating, L. Faraone, J. Dell
We present an experimental demonstration of an integrated technique designed to measure the height position of a micro-cantilever with extremely high precision. Our experimental results show that changing the beam height by 200 nm can result in an up to 40 dB change in optical power transmitted through an underlying optical waveguide.
{"title":"An optically resonant, grating-based technique for the sensitive detection of MEMS cantilever beam height","authors":"G. Putrino, M. Martyniuk, A. Keating, L. Faraone, J. Dell","doi":"10.1109/COMMAD.2012.6472387","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472387","url":null,"abstract":"We present an experimental demonstration of an integrated technique designed to measure the height position of a micro-cantilever with extremely high precision. Our experimental results show that changing the beam height by 200 nm can result in an up to 40 dB change in optical power transmitted through an underlying optical waveguide.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125676433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472436
V. Sivan, S. Tang, A. O’Mullane, P. Petersen, N. Eshtiaghi, K. Kalantar-zadeh, A. Mitchell
This paper reports on a highly sensitive electrochemical based heavy metal ion sensor obtained by using recently discovered liquid metal marbles. We present the procedure to form these liquid metal marbles with controlled coating density. We also show enhanced electrochemical sensitivity of these marbles towards heavy metal ions with excellent selectivity.
{"title":"Enhanced electrochemical heavy metal ion sensor using liquid metal marbles - towards on-chip application","authors":"V. Sivan, S. Tang, A. O’Mullane, P. Petersen, N. Eshtiaghi, K. Kalantar-zadeh, A. Mitchell","doi":"10.1109/COMMAD.2012.6472436","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472436","url":null,"abstract":"This paper reports on a highly sensitive electrochemical based heavy metal ion sensor obtained by using recently discovered liquid metal marbles. We present the procedure to form these liquid metal marbles with controlled coating density. We also show enhanced electrochemical sensitivity of these marbles towards heavy metal ions with excellent selectivity.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125355123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472428
C. Yin, Miloš Rančić, N. Stavrias, G. D. Boo, J. McCallum, M. Sellars, S. Rogge
We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.
{"title":"Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor","authors":"C. Yin, Miloš Rančić, N. Stavrias, G. D. Boo, J. McCallum, M. Sellars, S. Rogge","doi":"10.1109/COMMAD.2012.6472428","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472428","url":null,"abstract":"We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114156053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472411
F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish
AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).
{"title":"Optimisation studies for AlGaN/GaN-based nitrate sensors","authors":"F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish","doi":"10.1109/COMMAD.2012.6472411","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472411","url":null,"abstract":"AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472332
G. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, G. Gautam, M. N. Kutty, E. Plis, S. Krishna, L. Faraone
In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Since the Hall effect technique cannot be used for vertical transport measurements, a magnetoresistance approach has been used. The magnetore-sistance data was obtained at electric fields not exceeding 25 V/cm and magnetic fields up to 12T. It is shown that at room temperature the sample conductivity is due to four distinct carriers, associated with the majority carrier holes, side-wall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.
{"title":"Vertical transport in InAs/GaSb type-II superlattices","authors":"G. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, G. Gautam, M. N. Kutty, E. Plis, S. Krishna, L. Faraone","doi":"10.1109/COMMAD.2012.6472332","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472332","url":null,"abstract":"In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Since the Hall effect technique cannot be used for vertical transport measurements, a magnetoresistance approach has been used. The magnetore-sistance data was obtained at electric fields not exceeding 25 V/cm and magnetic fields up to 12T. It is shown that at room temperature the sample conductivity is due to four distinct carriers, associated with the majority carrier holes, side-wall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125623107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472412
C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone
Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.
{"title":"Effect of FIB milling on MEMS SOI cantilevers","authors":"C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2012.6472412","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472412","url":null,"abstract":"Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117097697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：