Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472422
D. Tripathi, H. Mao, K. Silva, L. Faraone
In this paper we present Inductively coupled plasma chemical vapour deposition(ICPECVD) of amorphous Silicon (a-Si:H) thin films. By tuning the ICP power, RF power and pressure tensile and conformal a-Si:H films can be obtained. Such films are of great importance for the MEMS application. We also show that the optical absorption due to Si:H and Si-H2 bond in the a-Si:H can be reduced by annealing the film at low temperature (500°C)by removing the hydrogen. The rapid and low temperature annealing ensures smooth a-Si:H films for the NIR applications in optical MEMS.
{"title":"Compositional and mechanical properties of PECVD silicon for thin-film optical applications","authors":"D. Tripathi, H. Mao, K. Silva, L. Faraone","doi":"10.1109/COMMAD.2012.6472422","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472422","url":null,"abstract":"In this paper we present Inductively coupled plasma chemical vapour deposition(ICPECVD) of amorphous Silicon (a-Si:H) thin films. By tuning the ICP power, RF power and pressure tensile and conformal a-Si:H films can be obtained. Such films are of great importance for the MEMS application. We also show that the optical absorption due to Si:H and Si-H2 bond in the a-Si:H can be reduced by annealing the film at low temperature (500°C)by removing the hydrogen. The rapid and low temperature annealing ensures smooth a-Si:H films for the NIR applications in optical MEMS.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116944474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472352
Q. Gao, H. Tan, L. Fu, P. Parkinson, S. Breuer, J. Wong-Leung, C. Jagadish
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
{"title":"InP nanowires grown by SA-MOVPE","authors":"Q. Gao, H. Tan, L. Fu, P. Parkinson, S. Breuer, J. Wong-Leung, C. Jagadish","doi":"10.1109/COMMAD.2012.6472352","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472352","url":null,"abstract":"A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133337483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472400
X. Yuan, H. Tan, P. Parkinson, J. Wong-Leung, S. Breuer, Q. Gao, C. Jagadish
We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.
{"title":"Growth and characterization of GaAs1−xSbx nanowires","authors":"X. Yuan, H. Tan, P. Parkinson, J. Wong-Leung, S. Breuer, Q. Gao, C. Jagadish","doi":"10.1109/COMMAD.2012.6472400","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472400","url":null,"abstract":"We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115866099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472374
B. C. Johnson, N. Stavrias, B. Haberl, L. B. B. Aji, J. Bradby, J. McCallum, J. Williams
Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.
用拉曼散射研究了压痕形成的亚稳Si相。研究了压痕应变、相分布和相变动力学。
{"title":"Raman study on the phase transformations of the meta-stable phases of Si induced by indentation","authors":"B. C. Johnson, N. Stavrias, B. Haberl, L. B. B. Aji, J. Bradby, J. McCallum, J. Williams","doi":"10.1109/COMMAD.2012.6472374","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472374","url":null,"abstract":"Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115253527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472354
L. H. Willems van Beveren, J. McCallum, H. Tan, C. Jagadish
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.
{"title":"Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures","authors":"L. H. Willems van Beveren, J. McCallum, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472354","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472354","url":null,"abstract":"In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"323 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115656788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472416
K. K. Lee, T. Shiell, J. McCallum, R. Szymanski, A. Soncini, C. Boskovic, D. Jamieson
Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed.
{"title":"Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate","authors":"K. K. Lee, T. Shiell, J. McCallum, R. Szymanski, A. Soncini, C. Boskovic, D. Jamieson","doi":"10.1109/COMMAD.2012.6472416","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472416","url":null,"abstract":"Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127213317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472413
T. Kim, K. Belay, D. Llewellyn, R. Elliman, D. Choi, B. Luther-Davies
Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.
{"title":"Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation","authors":"T. Kim, K. Belay, D. Llewellyn, R. Elliman, D. Choi, B. Luther-Davies","doi":"10.1109/COMMAD.2012.6472413","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472413","url":null,"abstract":"Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123463563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472383
J. Valentine, P. Moitra, Y. Yang, W. Wang
Dielectric metamaterials offer a potential low-loss alternative to plasmonic metamaterials at optical frequencies. However, demonstrations of dielectric metamaterials have so far been limited to microwave and mid-infrared frequencies. In this work, we outline the development of purely dielectric zero-index metamaterials operating at optical frequencies. The metamaterial, formed from silicon rods, exhibits impedance matching with air, resulting in unity transmission at the zero-index point. Design and experimental realization of the metamaterials is presented. The metamaterials can potentially be used for a number of applications including compact lens systems, directional emitters, and transformation optics devices.
{"title":"All dielectric zero-index metamaterials at optical frequencies","authors":"J. Valentine, P. Moitra, Y. Yang, W. Wang","doi":"10.1109/COMMAD.2012.6472383","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472383","url":null,"abstract":"Dielectric metamaterials offer a potential low-loss alternative to plasmonic metamaterials at optical frequencies. However, demonstrations of dielectric metamaterials have so far been limited to microwave and mid-infrared frequencies. In this work, we outline the development of purely dielectric zero-index metamaterials operating at optical frequencies. The metamaterial, formed from silicon rods, exhibits impedance matching with air, resulting in unity transmission at the zero-index point. Design and experimental realization of the metamaterials is presented. The metamaterials can potentially be used for a number of applications including compact lens systems, directional emitters, and transformation optics devices.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121970774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472344
F. Wang, W. M. Lee, W. J. Toe, Q. Gao, H. Tan, C. Jagadish, P. Reece
We report a novel method for using a spatial light modulator (SLM) to spatially map the luminescent properties of single trapped semiconductor nanowires by dynamic optical tweezers. Being able to control the axial position of the trapping focus with respect to the excitation source, the composition along the long axis of the nanowire can be probed. We also explore the feasibility of tailoring trapping beam shape to enhance the axial trap stiffness for long nanowires (> 5 μm).
{"title":"PL mapping and optimized optical trapping of nanowires SLM beam shaping","authors":"F. Wang, W. M. Lee, W. J. Toe, Q. Gao, H. Tan, C. Jagadish, P. Reece","doi":"10.1109/COMMAD.2012.6472344","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472344","url":null,"abstract":"We report a novel method for using a spatial light modulator (SLM) to spatially map the luminescent properties of single trapped semiconductor nanowires by dynamic optical tweezers. Being able to control the axial position of the trapping focus with respect to the excitation source, the composition along the long axis of the nanowire can be probed. We also explore the feasibility of tailoring trapping beam shape to enhance the axial trap stiffness for long nanowires (> 5 μm).","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"923 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123284582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472339
M. V. Fischett, S. Aboud, J. Kim, Z. Ong, S. Narayanan
We present full-band semi-classical and quantum-mechanical transport models required to study electronic transport in nanometer-scale devices.
我们提出了研究纳米级器件中电子输运所需的全带半经典和量子力学输运模型。
{"title":"Scaling FETs to (beyond?) 10 nm: From semiclassical to quantum models","authors":"M. V. Fischett, S. Aboud, J. Kim, Z. Ong, S. Narayanan","doi":"10.1109/COMMAD.2012.6472339","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472339","url":null,"abstract":"We present full-band semi-classical and quantum-mechanical transport models required to study electronic transport in nanometer-scale devices.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124600956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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