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Non-linear direct-laser-write lithography for semiconductor nanowire characterisation 用于半导体纳米线表征的非线性直接激光写入光刻技术
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472397
P. Parkinson, K. Peng, N. Jiang, Q. Gao, H. Tan, C. Jagadish
A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].
提出了一种非线性光刻技术,为接触半导体纳米线提供了一种新的、快速的、无损伤的方法。此外,通过使用室温发光的纳米线,通阻光致发光步骤为接触高质量的线提供了可验证的途径[1]。
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引用次数: 0
Fabrication of two-dimensional close-packed arrays of colloidal silicon nanoparticles via Langmuir-Blodgett deposition Langmuir-Blodgett沉积法制备胶体硅纳米颗粒二维密排阵列
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472420
P. Zhang, Shujuan Huang, G. Conibeer
An efficient deposition method for colloidal nanoparticles (NPs), Langmuir-Blodgett (LB) deposition is investigated and used to fabricate close- packed arrays of silicon (Si) NPs. Both amorphous and ordered arrays are achievable by tuning the stabilizing time and surface pressure (SP) of the LB film on the surface of water in the LB procedures. The deposited NP layers were characterised by AFM and TEM. AFM observation showed successful formation of monolayers, while TEM results clearly showed the orientations of the arrays. Such arrays might be used as the absorber materials of hot carrier solar cells because of their potential for strong phonon confinement [1].
Langmuir-Blodgett (LB)沉积法是制备胶体纳米颗粒(NPs)的一种有效方法,并用于制备硅(Si) NPs的紧密堆积阵列。在LB过程中,通过调整LB膜在水表面的稳定时间和表面压力(SP),可以实现非晶和有序阵列。用原子力显微镜和透射电镜对沉积的NP层进行了表征。原子力显微镜观察显示单层成功形成,透射电镜结果清楚地显示了阵列的取向。由于具有强声子约束的潜力,这种阵列可以用作热载流子太阳能电池的吸收材料[1]。
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引用次数: 0
Optical properties of silver nanowires grown electrochemically in nanoporous alumina 在纳米多孔氧化铝中电化学生长银纳米线的光学性质
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472401
M. Aramesh, J. Červenka, R. Rajasekharan, D. Garrett, J. Fang, K. Ostrikov, S. Prawer
We report fabrication and optical properties of electrochemically deposited silver nanowires into nanoporous alumina template. A finite element method is used to study plasmonic coupling of dipole emitters with the silver nanowires.
本文报道了电化学沉积银纳米线在纳米多孔氧化铝模板中的制备及其光学性能。采用有限元方法研究了偶极子发射体与银纳米线的等离子体耦合。
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引用次数: 0
Detection of biological reactions by AlGaN/GaN biosensor AlGaN/GaN生物传感器对生物反应的检测
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472367
A. Podolska, R. Seeber, U. Mishra, K. Pfleger, G. Parish, B. Nener
We have investigated application of AlGaN/GaN cell-based biosensors for detection of biological reactions in response to the drug ionomycin. The device sensitivity was dependent on environmental factors such as temperature and atmospheric composition. A significant improvement in signal amplitude was obtained through stabilisation of measurement conditions. These results are an important step in development and optimisation of reliable AlGaN/GaN cell-based biosensors.
我们研究了基于AlGaN/GaN细胞的生物传感器在离子霉素生物反应检测中的应用。器件的灵敏度取决于环境因素,如温度和大气成分。通过稳定测量条件,显著提高了信号幅度。这些结果是开发和优化可靠的AlGaN/GaN细胞生物传感器的重要一步。
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引用次数: 10
Metamorphic buffer layers for mid-infrared emitting semiconductor lasers 中红外发射半导体激光器的变质缓冲层
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472379
L. Mawst, D. Botez, T. Kuech
We have investigated the use of Metamorphic Buffer Layer (MBL) structures for the realization mid-infrared semiconductor lasers employing either interband or intersubband transitions. The resulting surface morphology of the MBL is generally cross-hatched along the orthogonal <;110> directions. This surface morphology may negatively impact device structures grown on top of the MBL. We have employed two different techniques to improve the surface morphology of MBLs, while maintaining an epiappropriate surface chemical composition and structure: (1) Introduction of Sb as a surfactant to create novel step-graded MBLs; and (2) Chemical-Mechanical-Polishing (CMP) of the MBL followed by MOCVD regrowth of layers atop the MBL.
我们研究了利用变质缓冲层(MBL)结构实现带间或子带间跃迁的中红外半导体激光器。所得的MBL表面形态通常沿正交方向交叉孵化。这种表面形态可能会对生长在MBL顶部的器件结构产生负面影响。我们采用了两种不同的技术来改善MBLs的表面形貌,同时保持表面化学成分和结构的适宜性:(1)引入Sb作为表面活性剂来制备新型阶梯梯度MBLs;(2)对MBL进行化学-机械-抛光(CMP),然后对MBL顶部的层进行MOCVD再生。
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引用次数: 0
Dark field optical tweezers for studying nanoparticle dynamics 用于纳米粒子动力学研究的暗场光镊
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472381
W. J. Toe, K. Pearce, F. Wang, P. Reece
We report a method of characterising physical and optical properties of nanoparticles using optical tweezers combined with dark field microscopy. The technique uses measurements from Brownian dynamics of the trapped nanoparticles to determine localised surface plasmon resonance (LSPR) spectroscopy to determine nanoparticle size information.
我们报告了一种使用光学镊子结合暗场显微镜表征纳米粒子物理和光学特性的方法。该技术利用捕获纳米颗粒的布朗动力学测量来确定局部表面等离子体共振(LSPR)光谱,从而确定纳米颗粒的大小信息。
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引用次数: 0
Spintronics materials and devices - ferromagnetic semiconduc-tors and heterostructures 自旋电子学材料和器件。铁磁半导体和异质结构
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472389
M. Tanaka, S. Ohya, P. Hai, R. Nakane
Introducing spin degrees of freedom into the present semiconductor electronics is a very important issue for realizing novel devices which will be needed in the future information technology. For fabricating such devices, it is necessary to exploit and fabricate semiconductor-based magnetic materials. III-V-based ferromagnetic semiconductors and MnAs/III-V hybrid nanostructures are hopeful candidates and model systems for future spintronic devices [1, 2].
在现有的半导体电子学中引入自旋自由度对于实现未来信息技术所需的新型器件是一个非常重要的问题。为了制造这样的器件,有必要开发和制造半导体基磁性材料。基于III-V的铁磁半导体和MnAs/III-V混合纳米结构是未来自旋电子器件的有希望的候选者和模型系统[1,2]。
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引用次数: 0
Control of chemical composition of rare-earth substituted iron garnets using biased target deposition 偏靶沉积法控制稀土取代铁石榴石的化学成分
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472377
N. Krishnan, M. Martyniuk, R. Jeffery, R. Woodward, J. Dell, L. Faraone
Rare earth cerium substituted europium iron garnets (CeEu)3(FeGa)5O12 (Ce:EIG) as well as the elemental oxides were deposited on fused quartz substrates using Biased Target Deposition (BTD). The Ce:EIG films are prepared at low temperature (80-120°C) by sputtering four metallic targets simultaneously using a low energy ion beam. This method provides control over the material composition in a predictable way by controlling the bias duty cycle on individual targets.
采用偏靶沉积(BTD)技术在熔融石英衬底上制备了稀土铈取代的铕铁石榴石(CeEu)3(FeGa)5O12 (Ce:EIG)及其单质氧化物。在低温(80 ~ 120℃)条件下,利用低能离子束同时溅射4个金属靶,制备了Ce:EIG薄膜。该方法通过控制单个目标上的偏置占空比,以可预测的方式控制材料成分。
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引用次数: 2
A numerical model for determining the relative accuracy of the Landé g-factor obtained from ac and dc conductance measurements of Quantum Point Contacts 从量子点接触的交流和直流电导测量中获得的land<s:1> g因子的相对精度的数值模型
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472404
S. Fricke, A. Burke, A. Micolich
A number of approaches currently exist for obtaining the Landé effective g-factor g* from experimental measurements of the ac and dc conductance of AlGaAs/GaAs Quantum Point Contacts (QPCs). The correspondence between these methods is not perfect, motivating us to develop an analytical model for assessing the relative accuracy of the various approaches using a perfect, experimental artefact-free data-set. We will present a comparative study of the accuracy of ac and dc-based methods for determining the g-factor in QPCs.
目前有许多方法可以通过实验测量AlGaAs/GaAs量子点接触(QPCs)的交流和直流电导来获得land有效g因子g*。这些方法之间的对应关系并不完美,这促使我们开发一个分析模型,使用一个完美的、无伪像的实验数据集来评估各种方法的相对准确性。我们将提出一个比较研究的准确性交流和直流为基础的方法,以确定在qpc的g因子。
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引用次数: 0
Plasmonic nano-structures for opto-mechanical and sensing applications 光机械和传感应用的等离子体纳米结构
Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472385
L. Rosa, G. Gervinskas, E. Brasselet, S. Juodkazis
We simulate the spectral properties of simple plasmonic nanoparticles (NPs), which we have fabricated with electron beam lithography (EBL) and lift-off, with or without nano-grooves milled by ion-beam lithography (IBL). We estimate the NP behaviour under laser illumination using 3D finite difference time domain (FDTD) simulations, showing that simple non-chiral NPs can generate torque from circularly polarized beams and emit optical vortices via spin-orbit coupling. We demonstrate numerically the position and intensity control of field enhancement hot-spots in chiral NPs illuminated by optical vortex, by combining spin/orbit momentum and NP chirality.
我们模拟了简单等离子体纳米粒子(NPs)的光谱特性,这些纳米粒子是我们用电子束光刻(EBL)和提离制造的,有或没有用离子束光刻(IBL)研磨的纳米凹槽。我们利用三维时域有限差分(FDTD)模拟估计了激光照射下的NP行为,结果表明,简单的非手性NP可以从圆偏振光束中产生扭矩,并通过自旋-轨道耦合发射光学涡流。结合自旋/轨道动量和NP手性,对光涡旋照射下手性NP中场增强热点的位置和强度控制进行了数值模拟。
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引用次数: 1
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COMMAD 2012
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