Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472440
L. Hollenberg
Theoretical and experimental results will be presented showing how the nitrogen-vacancy spin qubit in diamond can be used as a nanoscale magnetometer/sensor in biology with high sensitivity and resolution.
{"title":"The nitrogen-vacancy spin qubit for sensing in biology","authors":"L. Hollenberg","doi":"10.1109/COMMAD.2012.6472440","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472440","url":null,"abstract":"Theoretical and experimental results will be presented showing how the nitrogen-vacancy spin qubit in diamond can be used as a nanoscale magnetometer/sensor in biology with high sensitivity and resolution.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121192849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472395
Y. H. Lee, Z. Li, L. Fu, P. Parkinson, K. Vora, H. Tan, C. Jagadish
Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.
{"title":"Improved GaAs nanowire solar cells using AlGaAs for surface passivation","authors":"Y. H. Lee, Z. Li, L. Fu, P. Parkinson, K. Vora, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472395","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472395","url":null,"abstract":"Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"16 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125833338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472415
N. Eikenberg, K. Ganesan, K. K. Lee, M. Edmonds, L. H. Willems van Beveren, S. Prawer
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
{"title":"Fabrication and investigation of Nitrogen doped ultra-nano-crystalline diamond Hall-bar devices","authors":"N. Eikenberg, K. Ganesan, K. K. Lee, M. Edmonds, L. H. Willems van Beveren, S. Prawer","doi":"10.1109/COMMAD.2012.6472415","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472415","url":null,"abstract":"Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122823030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472358
A. Burke, O. Klochan, A. Hamilton, I. Farrer, D. Ritchie, A. Micolich
We report the dependence of the 1D Landé g-factor g* on electron density in quantum point contacts (QPCs). We obtain g* values up to 2.8 significantly exceeding previous values for Al-GaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs.
{"title":"The 1D g-factor and 0.7 anomaly in QPCs with independent control over density","authors":"A. Burke, O. Klochan, A. Hamilton, I. Farrer, D. Ritchie, A. Micolich","doi":"10.1109/COMMAD.2012.6472358","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472358","url":null,"abstract":"We report the dependence of the 1D Landé g-factor g* on electron density in quantum point contacts (QPCs). We obtain g* values up to 2.8 significantly exceeding previous values for Al-GaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128766101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472338
T. Crasto, H. Steigerwald, V. Sivan, A. Mitchell
We report the fabrication of optical waveguides in z-cut 5 mol% Mg-doped congruent LiNbO3 using the etching during indiffusion of Ti (EDIT) technique. Waveguiding is demonstrated at 633 nm and 1550 nm and effective index and loss measurements of waveguide at 1550 nm are also presented.
{"title":"Optical waveguides realised in z-cut, 5 mol% Mg-doped, congruent LiNbO3 using Etching During Indiffusion of Ti","authors":"T. Crasto, H. Steigerwald, V. Sivan, A. Mitchell","doi":"10.1109/COMMAD.2012.6472338","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472338","url":null,"abstract":"We report the fabrication of optical waveguides in z-cut 5 mol% Mg-doped congruent LiNbO3 using the etching during indiffusion of Ti (EDIT) technique. Waveguiding is demonstrated at 633 nm and 1550 nm and effective index and loss measurements of waveguide at 1550 nm are also presented.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"473 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127202360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472351
H. Fonseka, H. Tan, J. Kang, S. Paiman, Q. Gao, P. Parkinson, C. Jagadish
InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.
{"title":"Growth of InP nanowires on silicon using a thin buffer layer","authors":"H. Fonseka, H. Tan, J. Kang, S. Paiman, Q. Gao, P. Parkinson, C. Jagadish","doi":"10.1109/COMMAD.2012.6472351","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472351","url":null,"abstract":"InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126812545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472363
N. Akhavan, G. Jolley, G. U. Membreno, J. Antoszewski, L. Faraone
In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.
{"title":"Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation","authors":"N. Akhavan, G. Jolley, G. U. Membreno, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2012.6472363","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472363","url":null,"abstract":"In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126534671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472393
H. F. Lu, L. Fu, G. Jolley, H. Tan, C. Jagadish
N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.
{"title":"Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping","authors":"H. F. Lu, L. Fu, G. Jolley, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472393","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472393","url":null,"abstract":"N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126669945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472441
K. J. Iversen, M. Spencer
We have examined the adsorption of H2S on ZnO nanowires, nanotubes and facetted nanotubes using density functional theory calculations. Our results show that the gas-sensor reaction is dependent on nanostructure shape, gas concentration and reaction temperature. Functionalization of ZnO nanostructures changed the size of the band gap, which could be useful for altering their electrical and optical properties.
{"title":"ZnO nanostructures for sensing of H2S","authors":"K. J. Iversen, M. Spencer","doi":"10.1109/COMMAD.2012.6472441","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472441","url":null,"abstract":"We have examined the adsorption of H2S on ZnO nanowires, nanotubes and facetted nanotubes using density functional theory calculations. Our results show that the gas-sensor reaction is dependent on nanostructure shape, gas concentration and reaction temperature. Functionalization of ZnO nanostructures changed the size of the band gap, which could be useful for altering their electrical and optical properties.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131386061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472337
G. Allwood, G. Wild, S. Hinckley
Here, we present a comparison of the optical to electrical power conversion efficiency for off-the-shelf InGaAs and Ge photodiodes used as photonic power converters for power over fibre applications. The results show that, whilst the fill factor for the InGaAs photodiode is lower, the overall power conversion efficiency is better at long wavelengths due to the larger open circuit voltages.
{"title":"A Comparison of InGaAs and Ge photonic power converters for long wavelength power over fibre","authors":"G. Allwood, G. Wild, S. Hinckley","doi":"10.1109/COMMAD.2012.6472337","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472337","url":null,"abstract":"Here, we present a comparison of the optical to electrical power conversion efficiency for off-the-shelf InGaAs and Ge photodiodes used as photonic power converters for power over fibre applications. The results show that, whilst the fill factor for the InGaAs photodiode is lower, the overall power conversion efficiency is better at long wavelengths due to the larger open circuit voltages.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"288 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131545853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：