S. Yadav, A. Shukla, Hemkant Nehete, Sandeep Soni, Shipra Saini, B. Kaushik
In this article, the focus is on using machine learning methods to analyse non-volatile memory devices. This is important because the production of integrated circuits in the sub-micrometre range depends on advancements in manufacturing process technology, and it is crucial to evaluate how manufacturing tolerances affect the functionality of contemporary integrated circuits. Traditionally, Monte Carlo-based techniques have been used to accurately evaluate the impact of manufacturing tolerances on the functionality of integrated circuits. However, these techniques are computationally time-consuming. We will propose a scheme to "learn" the variation of the read margin (parallel and anti-parallel resistance) performance of spintronics devices. The machine learning approach, artificial neural network, is focused on this study (Read margin of spin transfer torque (STT)) spintronics devices. The accuracy for STT by Artificial Neural Network (ANN) is calculated with the help of the MATLAB deep learning toolbox. Regression models using machine learning (ML) are fast and precise over a variety of input ranges, making them ideal for device modelling. The ML algorithm has emerged as a potential substitute for Monte Carlo-based techniques. It can reduce the computational load needed in a Monte Carlo simulation covering all process corners, design parameters, and operating conditions. The article demonstrates the effectiveness of the ML algorithm by performing various simulations on spin transfer torque (STT) non-volatile memory. The proposed scheme involves "learning" the variation of the read margin performance of spintronic devices as a function of its material and geometric parameters. In conclusion, the use of machine learning techniques based on the different regression methods is a promising approach to increase the prediction time of result analysis as compared to SPICE simulation time.
{"title":"Variation analysis of spintronic device using machine learning algorithm","authors":"S. Yadav, A. Shukla, Hemkant Nehete, Sandeep Soni, Shipra Saini, B. Kaushik","doi":"10.1117/12.2676806","DOIUrl":"https://doi.org/10.1117/12.2676806","url":null,"abstract":"In this article, the focus is on using machine learning methods to analyse non-volatile memory devices. This is important because the production of integrated circuits in the sub-micrometre range depends on advancements in manufacturing process technology, and it is crucial to evaluate how manufacturing tolerances affect the functionality of contemporary integrated circuits. Traditionally, Monte Carlo-based techniques have been used to accurately evaluate the impact of manufacturing tolerances on the functionality of integrated circuits. However, these techniques are computationally time-consuming. We will propose a scheme to \"learn\" the variation of the read margin (parallel and anti-parallel resistance) performance of spintronics devices. The machine learning approach, artificial neural network, is focused on this study (Read margin of spin transfer torque (STT)) spintronics devices. The accuracy for STT by Artificial Neural Network (ANN) is calculated with the help of the MATLAB deep learning toolbox. Regression models using machine learning (ML) are fast and precise over a variety of input ranges, making them ideal for device modelling. The ML algorithm has emerged as a potential substitute for Monte Carlo-based techniques. It can reduce the computational load needed in a Monte Carlo simulation covering all process corners, design parameters, and operating conditions. The article demonstrates the effectiveness of the ML algorithm by performing various simulations on spin transfer torque (STT) non-volatile memory. The proposed scheme involves \"learning\" the variation of the read margin performance of spintronic devices as a function of its material and geometric parameters. In conclusion, the use of machine learning techniques based on the different regression methods is a promising approach to increase the prediction time of result analysis as compared to SPICE simulation time.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"14 1","pages":"126560V - 126560V-9"},"PeriodicalIF":0.0,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78820339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Haugan, D. Bas, Augustine Urbas, A. Neal, K. Eyink
Quantum photonics opens doors for applications in sensing, data transfer, and quantum computing. Application areas in many of these technologies require in some manner tunable single photon sources. Hyperbolic metamaterials, composed of metallic building blocks embedded in dielectric media control emission lifetime by modifying the photon density of states. However, no previous efforts have explored the transient modification of metamaterials to modulate emission. Antimony-based semiconductor hyperbolic metamaterials (SHMMs) offer a route to modulation of these resonances at the mid-infrared (IR) wavelength range, which would modulate emission. In this work, we demonstrate the ability to create an ultrafast hyperbolic momentum state in metallic InAsSb/dielectric GaSb stacks and explore the possibility of transient modification of metamaterials by controlling the optical properties of photon emission. If successful, this study will establish a new platform for deterministic single photon emission that can be integrable into opto-electronic platforms and dramatically advance optical quantum technologies. Properly engineered quantum well structures are grown by molecular beam epitaxy with Si-doping in order to convert the InAsSb layers from dielectric to metallic at IR frequencies. The carrier excitation scheme of the engineered hyperbolic stacks is investigated in a variety of excitation levels using pump–probe measurements. The photo-excited carriers in the structure with a metal fraction of ∼0.5 show a polarization dependent reflectivity change, which indicates a transient hyperbolic metamaterial state in the heterostructure induced by the pump laser.
{"title":"Exploring transient modification of hyperbolic metamaterials using InAsSb-based semiconductor","authors":"H. Haugan, D. Bas, Augustine Urbas, A. Neal, K. Eyink","doi":"10.1117/12.2676371","DOIUrl":"https://doi.org/10.1117/12.2676371","url":null,"abstract":"Quantum photonics opens doors for applications in sensing, data transfer, and quantum computing. Application areas in many of these technologies require in some manner tunable single photon sources. Hyperbolic metamaterials, composed of metallic building blocks embedded in dielectric media control emission lifetime by modifying the photon density of states. However, no previous efforts have explored the transient modification of metamaterials to modulate emission. Antimony-based semiconductor hyperbolic metamaterials (SHMMs) offer a route to modulation of these resonances at the mid-infrared (IR) wavelength range, which would modulate emission. In this work, we demonstrate the ability to create an ultrafast hyperbolic momentum state in metallic InAsSb/dielectric GaSb stacks and explore the possibility of transient modification of metamaterials by controlling the optical properties of photon emission. If successful, this study will establish a new platform for deterministic single photon emission that can be integrable into opto-electronic platforms and dramatically advance optical quantum technologies. Properly engineered quantum well structures are grown by molecular beam epitaxy with Si-doping in order to convert the InAsSb layers from dielectric to metallic at IR frequencies. The carrier excitation scheme of the engineered hyperbolic stacks is investigated in a variety of excitation levels using pump–probe measurements. The photo-excited carriers in the structure with a metal fraction of ∼0.5 show a polarization dependent reflectivity change, which indicates a transient hyperbolic metamaterial state in the heterostructure induced by the pump laser.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"132 1","pages":"1265704 - 1265704-8"},"PeriodicalIF":0.0,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88983955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shipra Saini, A. Shukla, Namita Bindal, Sandeep Soni, Shailendra Yadav, B. Kaushik
The propagation of spin waves and their interaction with the spin solitons like skyrmions, domain walls and vortex are one of the promising ways for designing nanoscale spintronic devices. Magnetic skyrmion, a particle-like nanoscale object has potential applications in next-generation spintronic devices. In this paper, the unidirectional motion of the skyrmion under the influence of spin wave is studied using micromagnetic simulations. Here, two different magnetic anisotropies are considered on a nanotrack that creates an energy gradient. As a result, the repulsive forces act on the skyrmion and is responsible for the motion of the skyrmion in one direction. The spin wave driving force leads the skyrmion to move in forward direction and the anisotropy gradient is responsible to prevent the skyrmion motion in reverse direction. The skyrmion moves from higher perpendicular magnetic anisotropy region to lower energy region, leading to a unidirectional transport of the skyrmion. This proposed device has less Joule heating and is more energy efficient as compared to other spin transfer torque (STT) and spin orbit torque (SOT) driven techniques. This is due to the fact that spin wave can generate a flow of magnetic momentum without generating an electron flow. This spin wave driven skyrmionics device is a promising pathway towards the development of a complete non-charge based magnetic devices.
{"title":"Anisotropy barrier-induced unidirectional motion of spin wave driven skyrmion","authors":"Shipra Saini, A. Shukla, Namita Bindal, Sandeep Soni, Shailendra Yadav, B. Kaushik","doi":"10.1117/12.2676810","DOIUrl":"https://doi.org/10.1117/12.2676810","url":null,"abstract":"The propagation of spin waves and their interaction with the spin solitons like skyrmions, domain walls and vortex are one of the promising ways for designing nanoscale spintronic devices. Magnetic skyrmion, a particle-like nanoscale object has potential applications in next-generation spintronic devices. In this paper, the unidirectional motion of the skyrmion under the influence of spin wave is studied using micromagnetic simulations. Here, two different magnetic anisotropies are considered on a nanotrack that creates an energy gradient. As a result, the repulsive forces act on the skyrmion and is responsible for the motion of the skyrmion in one direction. The spin wave driving force leads the skyrmion to move in forward direction and the anisotropy gradient is responsible to prevent the skyrmion motion in reverse direction. The skyrmion moves from higher perpendicular magnetic anisotropy region to lower energy region, leading to a unidirectional transport of the skyrmion. This proposed device has less Joule heating and is more energy efficient as compared to other spin transfer torque (STT) and spin orbit torque (SOT) driven techniques. This is due to the fact that spin wave can generate a flow of magnetic momentum without generating an electron flow. This spin wave driven skyrmionics device is a promising pathway towards the development of a complete non-charge based magnetic devices.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"124 1","pages":"126560W - 126560W-6"},"PeriodicalIF":0.0,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88083567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
John Cenker, S. Sivakumar, Kaichen Xie, G. Diederich, Zhaoyu Liu, Avalon H. Dismukes, Daniel G. Chica, Xiaoyang Zhu, Xavier Roy, J. Chu, Di Xiao, Ting Cao, Xiaodong Xu
The coupling of spin and charge in magnetic semiconductors lies at the heart of the field of spintronics and has attracted significant interest for new computing technologies. In this paper, we will review our recent progress in studying and controlling magneto-exciton coupling in the layered antiferromagnetic semiconductor CrSBr. The anisotropic Wannier-type excitons in this material serve as a sensor of the interlayer magnetic coupling. Using this exciton sensor, we found that the magnetic order is extremely tunable by the application of tensile strain, with a reversible AFM to FM transition occurring at large but experimentally feasible strains. These results establish CrSBr as an exciting platform for harnessing spin-charge-lattice coupling to the 2D limit.
{"title":"Probing and controlling magnetism in 2D magnetic semiconductor CrSBr","authors":"John Cenker, S. Sivakumar, Kaichen Xie, G. Diederich, Zhaoyu Liu, Avalon H. Dismukes, Daniel G. Chica, Xiaoyang Zhu, Xavier Roy, J. Chu, Di Xiao, Ting Cao, Xiaodong Xu","doi":"10.1117/12.2632847","DOIUrl":"https://doi.org/10.1117/12.2632847","url":null,"abstract":"The coupling of spin and charge in magnetic semiconductors lies at the heart of the field of spintronics and has attracted significant interest for new computing technologies. In this paper, we will review our recent progress in studying and controlling magneto-exciton coupling in the layered antiferromagnetic semiconductor CrSBr. The anisotropic Wannier-type excitons in this material serve as a sensor of the interlayer magnetic coupling. Using this exciton sensor, we found that the magnetic order is extremely tunable by the application of tensile strain, with a reversible AFM to FM transition occurring at large but experimentally feasible strains. These results establish CrSBr as an exciting platform for harnessing spin-charge-lattice coupling to the 2D limit.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"120 1","pages":"1220506 - 1220506-6"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87776471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zih-Chun Su, D. Sinha, Ashish Gaurav, Ching-Fuh Lin
The metal-semiconductor interface structure, which can convert photon energy into electrons by internal photon-emission effect, is utilized as one kind of photodetectors. In the Schottky device, the barrier limits the detectable wavelength and the detection response, so how to amplify the detection signal is an important issue. Here, we first quantify the effect of applied bias on the energy barrier reduction mechanism from a mathematical equation. Furthermore, we fabricate metal/semiconductor Schottky devices and experimentally demonstrate the optimization of optical response by image-force lowering effect. As a result, experiment showed a 21 times enhancement in responsivity after an image-force lowering effect was induced.
{"title":"The optimization of metal-semiconductor light detection by Schottky interface image force","authors":"Zih-Chun Su, D. Sinha, Ashish Gaurav, Ching-Fuh Lin","doi":"10.1117/12.2633752","DOIUrl":"https://doi.org/10.1117/12.2633752","url":null,"abstract":"The metal-semiconductor interface structure, which can convert photon energy into electrons by internal photon-emission effect, is utilized as one kind of photodetectors. In the Schottky device, the barrier limits the detectable wavelength and the detection response, so how to amplify the detection signal is an important issue. Here, we first quantify the effect of applied bias on the energy barrier reduction mechanism from a mathematical equation. Furthermore, we fabricate metal/semiconductor Schottky devices and experimentally demonstrate the optimization of optical response by image-force lowering effect. As a result, experiment showed a 21 times enhancement in responsivity after an image-force lowering effect was induced.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"51 2 1","pages":"1220608 - 1220608-6"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81673436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Neuwirth, F. Basso Basset, M. Rota, S. F. Covre da Silva, K. Jöns, A. Rastelli, R. Trotta
During recent years, quantum dots have become an increasingly established source of highly entangled photons 1. The main motivation for the development of this technology has resided in the expectation that a resonantly driven quantum emitter can offer a path towards on-demand photon pair generation 2. In fact, state-of-the-art sources relying on spontaneous parametric down-conversion intrinsically suffer from multipair emission at high pair generation rates, which causes a tradeoff between brightness and degree of entanglement 3. Despite the key importance of this aspect, the experimental study of how multiphoton emission affects the entanglement properties of quantum dot-based sources has received surprisingly little attention. In this paper we report the investigation of the multipair emission of the source under quasi-deterministic resonant two-photon excitation without filtering the excitation laser using polarization suppression. The focus is on measuring the real multipair emission entering in entanglement-based measurements, minimizing measurement artefacts from the setup and in particular from the excitation source. This is investigated by measuring the second-order correlation function at zero-time delay in several measurement conditions, including spectral filtering. Our work confirms that the multipair emission is provided also for entanglement-based measurement conditions and thus helps the design of efficient photon sources for quantum information and communication technologies.
{"title":"Multipair emission effects in quantum dot-based entangled photon sources","authors":"J. Neuwirth, F. Basso Basset, M. Rota, S. F. Covre da Silva, K. Jöns, A. Rastelli, R. Trotta","doi":"10.1117/12.2632421","DOIUrl":"https://doi.org/10.1117/12.2632421","url":null,"abstract":"During recent years, quantum dots have become an increasingly established source of highly entangled photons 1. The main motivation for the development of this technology has resided in the expectation that a resonantly driven quantum emitter can offer a path towards on-demand photon pair generation 2. In fact, state-of-the-art sources relying on spontaneous parametric down-conversion intrinsically suffer from multipair emission at high pair generation rates, which causes a tradeoff between brightness and degree of entanglement 3. Despite the key importance of this aspect, the experimental study of how multiphoton emission affects the entanglement properties of quantum dot-based sources has received surprisingly little attention. In this paper we report the investigation of the multipair emission of the source under quasi-deterministic resonant two-photon excitation without filtering the excitation laser using polarization suppression. The focus is on measuring the real multipair emission entering in entanglement-based measurements, minimizing measurement artefacts from the setup and in particular from the excitation source. This is investigated by measuring the second-order correlation function at zero-time delay in several measurement conditions, including spectral filtering. Our work confirms that the multipair emission is provided also for entanglement-based measurement conditions and thus helps the design of efficient photon sources for quantum information and communication technologies.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"111 1","pages":"1220603 - 1220603-8"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76671662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Joseph Monteleone, Matthew van Niekerk, Mario Ciminelli, G. Leake, D. Coleman, M. Fanto, S. Preble
We have demonstrated a packaged Silicon photon pair source. The spiral silicon waveguide source is 500 nm x 220 nm x 2 cm long and was packaged with input/output optical fibers enabling turn-key generation of photon pairs by connecting the input optical fiber to a telecommunication grade laser. In this work, we experimentally characterized the generation of bi-photons by spontaneous four-wave mixing in the Silicon waveguide. The insertion loss of the chip, after packaging, was measured to be approximately 15 dB (3 dB/facet, waveguide propagation loss of less than 1.5 dB/cm, 6 dB from splitters sequence). We investigated the phase matching of the source by wavelength tuning the 1 nm bandpass filters and found that the generated bi-photons have a half-bandwidth of 10 nm about the pump wavelength. We investigate pulse pumping using an actively mode-locked fiber laser with a 500 MHz repetition rate, pulse duration of approximately 30 ps and peak pulse power of 400 mW. Excitation of the pulsed source with a power of 1.4 mW through the chip generated 300 kHz coincidence rates after passing the chip’s output through a series of spectral bandpass filters (-1.4 db in channel 1 and -2.4 dB in channel 2 of filter loss and approximately 85 % efficiency of the detectors: inferred on-chip pair generation rate of 58 MHz). We also investigate two sources with 6 mW of continuous-wave pump power to generate 1550 nm bi-photons, generating 6.0 kHz coincidence rates (inferred on-chip pair generation rate of 2.3 MHz).
我们展示了一个封装的硅光子对源。螺旋硅波导源长500nm x 220nm x 2cm，封装有输入/输出光纤，通过将输入光纤连接到电信级激光器，实现光子对的交钥匙生成。在这项工作中，我们通过实验表征了硅波导中自发四波混频产生双光子。封装后，芯片的插入损耗约为15 dB (3 dB/facet，波导传播损耗小于1.5 dB/cm，从分路器序列得到6 dB)。我们通过对1 nm的带通滤波器进行波长调谐，研究了光源的相位匹配，发现产生的双光子在泵浦波长附近具有10 nm的半带宽。我们使用主动锁模光纤激光器研究脉冲泵浦，该激光器的重复频率为500 MHz，脉冲持续时间约为30 ps，峰值脉冲功率为400 mW。功率为1.4 mW的脉冲源通过芯片激发后，芯片的输出通过一系列频谱带通滤波器(滤波器损耗通道1 -1.4 db和通道2 -2.4 db，检测器效率约为85%:推断片上对产生率为58 MHz)，产生了300 kHz的符合率。我们还研究了两个具有6 mW连续波泵浦功率的源，以产生1550 nm双光子，产生6.0 kHz的符合率(推断片上对产生率为2.3 MHz)。
{"title":"Packaged foundry-fabricated silicon spiral photon pair source","authors":"Joseph Monteleone, Matthew van Niekerk, Mario Ciminelli, G. Leake, D. Coleman, M. Fanto, S. Preble","doi":"10.1117/12.2633145","DOIUrl":"https://doi.org/10.1117/12.2633145","url":null,"abstract":"We have demonstrated a packaged Silicon photon pair source. The spiral silicon waveguide source is 500 nm x 220 nm x 2 cm long and was packaged with input/output optical fibers enabling turn-key generation of photon pairs by connecting the input optical fiber to a telecommunication grade laser. In this work, we experimentally characterized the generation of bi-photons by spontaneous four-wave mixing in the Silicon waveguide. The insertion loss of the chip, after packaging, was measured to be approximately 15 dB (3 dB/facet, waveguide propagation loss of less than 1.5 dB/cm, 6 dB from splitters sequence). We investigated the phase matching of the source by wavelength tuning the 1 nm bandpass filters and found that the generated bi-photons have a half-bandwidth of 10 nm about the pump wavelength. We investigate pulse pumping using an actively mode-locked fiber laser with a 500 MHz repetition rate, pulse duration of approximately 30 ps and peak pulse power of 400 mW. Excitation of the pulsed source with a power of 1.4 mW through the chip generated 300 kHz coincidence rates after passing the chip’s output through a series of spectral bandpass filters (-1.4 db in channel 1 and -2.4 dB in channel 2 of filter loss and approximately 85 % efficiency of the detectors: inferred on-chip pair generation rate of 58 MHz). We also investigate two sources with 6 mW of continuous-wave pump power to generate 1550 nm bi-photons, generating 6.0 kHz coincidence rates (inferred on-chip pair generation rate of 2.3 MHz).","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"56 4 1","pages":"1220606 - 1220606-6"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74178575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I will discuss our recent proposal on deterministic generation of photonic repeater graph states using only a single quantum emitter, our plans for its experimental implementation, and its applications in quantum repeaters and networks.
{"title":"Deterministic generation of building-block photonic cluster states from a single quantum emitter","authors":"Shuo Sun","doi":"10.1117/12.2636914","DOIUrl":"https://doi.org/10.1117/12.2636914","url":null,"abstract":"I will discuss our recent proposal on deterministic generation of photonic repeater graph states using only a single quantum emitter, our plans for its experimental implementation, and its applications in quantum repeaters and networks.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"118 1","pages":"1220605 - 1220605-3"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85480822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Torres, B. M. Pascoguin, J. Adleman, Brad C. Liu, Richard C. Ordonez, Cody K. Hayashi, K. Liotta
Monolayer transition metal dichalcogenides (TMDs) are promising 2D semiconductors that feature direct bandgaps useful for various quantum and optoelectronic applications. We present on our progress in establishing a cryogenic photoluminescence setup using a cryogenic probe station with bare multi-mode fibers that allows for active-device biasing of novel material platforms. Using this system, we are able to detect the photoluminescence signal from various chemical vapor deposited (CVD) and molecular beam epitaxy (MBE) grown 2D semiconductors on sapphire (0001) substrates in vacuum. We observe a temperature dependent direct bandgap red-shift of around 40nm (from 8K to 450K) for CVD grown monolayer WS2 and CVD grown monolayer WSe2 on sapphire (0001) substrates. We observe a temperature dependent direct bandgap red-shift of around 37nm (from 6K to 450K) for MBE grown monolayer MoSe2 on sapphire (0001) substrates. Interestingly, for monolayer MoS2 on sapphire (0001) substrates, we observe the emergence of a strong photoluminescence signal at cryogenic temperatures below 100K, in addition to the A exciton luminescence signal, which is attributed to bound excitons.
{"title":"Cryogenic photoluminescence setup for rapid prototyping and active device biasing of monolayer 2D semiconductors for quantum applications","authors":"C. Torres, B. M. Pascoguin, J. Adleman, Brad C. Liu, Richard C. Ordonez, Cody K. Hayashi, K. Liotta","doi":"10.1117/12.2633602","DOIUrl":"https://doi.org/10.1117/12.2633602","url":null,"abstract":"Monolayer transition metal dichalcogenides (TMDs) are promising 2D semiconductors that feature direct bandgaps useful for various quantum and optoelectronic applications. We present on our progress in establishing a cryogenic photoluminescence setup using a cryogenic probe station with bare multi-mode fibers that allows for active-device biasing of novel material platforms. Using this system, we are able to detect the photoluminescence signal from various chemical vapor deposited (CVD) and molecular beam epitaxy (MBE) grown 2D semiconductors on sapphire (0001) substrates in vacuum. We observe a temperature dependent direct bandgap red-shift of around 40nm (from 8K to 450K) for CVD grown monolayer WS2 and CVD grown monolayer WSe2 on sapphire (0001) substrates. We observe a temperature dependent direct bandgap red-shift of around 37nm (from 6K to 450K) for MBE grown monolayer MoSe2 on sapphire (0001) substrates. Interestingly, for monolayer MoS2 on sapphire (0001) substrates, we observe the emergence of a strong photoluminescence signal at cryogenic temperatures below 100K, in addition to the A exciton luminescence signal, which is attributed to bound excitons.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"3 1","pages":"1220607 - 1220607-12"},"PeriodicalIF":0.0,"publicationDate":"2022-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78288509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Farfurnik, Harjot Singh, Zhouchen Luo, A. Bracker, S. Carter, E. Waks
Quantum dots coupled to high-Q cavities can induce optical transparency that provides photon switching capabilities. However, the optical access to such cavities can be inefficient due to their restrictive optical modes. Here, we observe optical transparency of ∼ 80% induced by a quantum dot coupled to a cavity with an efficient optical access, the low-Q bullseye cavity, due to the destructive interference of reflected light. Together with optical lifetimes of quantum dots as short as 80 ps, and the coherent manipulation capabilities of their spin, the transparency induced by coupling these dots to bullseye cavities makes them promising for quantum technologies.
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