Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608053
Tengteng Lei, Congwei Liao, Jie Huang, Ying Wang, Shengdong Zhang
An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.
{"title":"An a-InGaZnO TFT Gate Driver Circuit with Positive Feedback Effect","authors":"Tengteng Lei, Congwei Liao, Jie Huang, Ying Wang, Shengdong Zhang","doi":"10.1109/CAD-TFT.2018.8608053","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608053","url":null,"abstract":"An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"31 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132123042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608110
Yongli He, Ya Gao, Zehua Liu, Jie Luo, Chenxi Zhang, Qing Wan
Indium-zinc-oxide electric-double-layer (EDL) thin-film-transistors (TFTs) were fabricated on ITO glass substrates gated by agar electrolyte dielectrics. The humidity-dependent device performance was tested such as specific capacitance of the agar electrolyte, transfer characteristics, and gate leakage current. The humidity-dependent characteristics indicate that the EDL TFTs have potential applications in humidity sensing.
{"title":"Indium-Zinc-Oxide Electric-Double-Layer Thin-Film Transistors for Humidity Sensing","authors":"Yongli He, Ya Gao, Zehua Liu, Jie Luo, Chenxi Zhang, Qing Wan","doi":"10.1109/CAD-TFT.2018.8608110","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608110","url":null,"abstract":"Indium-zinc-oxide electric-double-layer (EDL) thin-film-transistors (TFTs) were fabricated on ITO glass substrates gated by agar electrolyte dielectrics. The humidity-dependent device performance was tested such as specific capacitance of the agar electrolyte, transfer characteristics, and gate leakage current. The humidity-dependent characteristics indicate that the EDL TFTs have potential applications in humidity sensing.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122261243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608100
Hongyang Zuo, Yukun Yang, Shengdong Zhang
Since ZnSnO Thin-Film Transistors (a-ZTO TFTs) are sensitive to the ZTO/GI interface, the crude quality of interface causes a series of problems. So we creatively used three methods to optimize the ZTO/GI interface. First, N2O plasma treatment applied to the gate insulator availably increases mobility (μsat) and restrains the instability. Second, when the rf sputtering power of active layer was reduced only near the interface, SSsat significantly decreased, although μsat and stability is a little degraded. Thirdly, the increasement of rf sputtering oxygen content can obviously optimize SSsat, following with the acceptable deterioration of μsat. Combining the three effective ways mentioned aboved, the result shows that the fabricated TFTs has μsat of 4.5±0.5 cm2/V∙s, a SSsat of 0.5±0.05 V/decade, and acceptable electrical stress stability under both positive and negative biases.
{"title":"Optimization of the ZTO/GI interface of Bottom-gate Amorphous ZnSnO Thin-Film Transistor","authors":"Hongyang Zuo, Yukun Yang, Shengdong Zhang","doi":"10.1109/CAD-TFT.2018.8608100","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608100","url":null,"abstract":"Since ZnSnO Thin-Film Transistors (a-ZTO TFTs) are sensitive to the ZTO/GI interface, the crude quality of interface causes a series of problems. So we creatively used three methods to optimize the ZTO/GI interface. First, N2O plasma treatment applied to the gate insulator availably increases mobility (μsat) and restrains the instability. Second, when the rf sputtering power of active layer was reduced only near the interface, SSsat significantly decreased, although μsat and stability is a little degraded. Thirdly, the increasement of rf sputtering oxygen content can obviously optimize SSsat, following with the acceptable deterioration of μsat. Combining the three effective ways mentioned aboved, the result shows that the fabricated TFTs has μsat of 4.5±0.5 cm2/V∙s, a SSsat of 0.5±0.05 V/decade, and acceptable electrical stress stability under both positive and negative biases.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134460803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608109
Yangbing Xu, Jun Chen, Kai Wang
We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.
{"title":"A Direct-Conversion X-ray Detector Based on A Vertical X-ray Photoconductor-Gated a-IGZO TFT","authors":"Yangbing Xu, Jun Chen, Kai Wang","doi":"10.1109/CAD-TFT.2018.8608109","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608109","url":null,"abstract":"We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116414825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608050
Liuqi Zhang, Wuxiao Ling, Baixiang Han, Gary Chaw, Xinnan Lin
We introduce a 5T2C pixel circuit in this paper to compensate TFT Vth variation in active matrix-organic light emitting diode (AMOLED) displays. Simulation results show that the emission current error is decreased to less than 10% with ±1V threshold voltage variation of the driving transistor, which is even less than 5% in middle and high level gray. This pixel circuit was used in the 15 inch IGZO TFT - AMOLED panel display of CSOT, and the lighting results show that the pixel circuit can greatly improve the uniformity of display’s luminescence.
{"title":"A High Accuracy 5T2C Compensation Circuit used in IGZO TFT_AMOLED Displays","authors":"Liuqi Zhang, Wuxiao Ling, Baixiang Han, Gary Chaw, Xinnan Lin","doi":"10.1109/CAD-TFT.2018.8608050","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608050","url":null,"abstract":"We introduce a 5T2C pixel circuit in this paper to compensate TFT Vth variation in active matrix-organic light emitting diode (AMOLED) displays. Simulation results show that the emission current error is decreased to less than 10% with ±1V threshold voltage variation of the driving transistor, which is even less than 5% in middle and high level gray. This pixel circuit was used in the 15 inch IGZO TFT - AMOLED panel display of CSOT, and the lighting results show that the pixel circuit can greatly improve the uniformity of display’s luminescence.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122847439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608049
Nianduan Lu, Wei Wei, X. Chuai, Yuhan Mei, Ling Li, Ming Liu
Summary form only given. Sensors with high sensitivity and selectivity act as the role for real-time detections of a variety of industrial processes and environment. Currently, plenty of low dimensional materials, such as graphene, layered MoS2, and nanotubes, have been proposed as potential candidates of gas sensors. The nanotubes are generally porous due to their high reactivity exterior surface, which makes them sensitive to small molecular. As being important low-dimensional materials with wide band gaps, boron nitride nanotubes (BNNTs) have also received considerable interests. Despite the adsorption behavior of pure or doped BNNTs has been reported, the structure and electronic properties of adsorbed small molecule on BNNTs is still ambiguous. Here, we investigate the structure and electronic property of BNNTs device with absorbed small molecules, and then effect of physisorbed small molecules. Fig. 1 displays a BNNT device structure for gas sensors. The first-principles calculations are performed within the framework of density function theory (DFT) by using GGA-PW91. It is found that the sites of LOMO and HOMO would be changed after BNNTs absorbed the different small molecules. The energy gap of BNNTs decreases with increasing the distance between small molecule and BNNT. The adsorption effect of BNNT will be optimal as the distance between the small molecule and BNNT is from 1 to 1.5 Å. The potential application of BNNT as highly sensitive gas sensor for N-based small molecules has also been discussed.
{"title":"Adsorbed property of boron nitride nanotube (BNNT) device: A study of first-principles calculations","authors":"Nianduan Lu, Wei Wei, X. Chuai, Yuhan Mei, Ling Li, Ming Liu","doi":"10.1109/CAD-TFT.2018.8608049","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608049","url":null,"abstract":"Summary form only given. Sensors with high sensitivity and selectivity act as the role for real-time detections of a variety of industrial processes and environment. Currently, plenty of low dimensional materials, such as graphene, layered MoS2, and nanotubes, have been proposed as potential candidates of gas sensors. The nanotubes are generally porous due to their high reactivity exterior surface, which makes them sensitive to small molecular. As being important low-dimensional materials with wide band gaps, boron nitride nanotubes (BNNTs) have also received considerable interests. Despite the adsorption behavior of pure or doped BNNTs has been reported, the structure and electronic properties of adsorbed small molecule on BNNTs is still ambiguous. Here, we investigate the structure and electronic property of BNNTs device with absorbed small molecules, and then effect of physisorbed small molecules. Fig. 1 displays a BNNT device structure for gas sensors. The first-principles calculations are performed within the framework of density function theory (DFT) by using GGA-PW91. It is found that the sites of LOMO and HOMO would be changed after BNNTs absorbed the different small molecules. The energy gap of BNNTs decreases with increasing the distance between small molecule and BNNT. The adsorption effect of BNNT will be optimal as the distance between the small molecule and BNNT is from 1 to 1.5 Å. The potential application of BNNT as highly sensitive gas sensor for N-based small molecules has also been discussed.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130121916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608114
Yue Wu, Weina Yong, Chia-Yu. Lee, Hang Zhou
In this paper, an asymmetric metal electrode with MoTi/Cu/Mo structure was designed. Due to the appropriate anticorrosion behavior, the thin MoTi top layer prevented photoresist peeling off during the whole etch process, resulted a superior etch profile compare to the control group with a Mo/Cu/Mo symmetrical structure.
{"title":"An Asymmetric Metal Electrode for TFT-LCDs","authors":"Yue Wu, Weina Yong, Chia-Yu. Lee, Hang Zhou","doi":"10.1109/CAD-TFT.2018.8608114","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608114","url":null,"abstract":"In this paper, an asymmetric metal electrode with MoTi/Cu/Mo structure was designed. Due to the appropriate anticorrosion behavior, the thin MoTi top layer prevented photoresist peeling off during the whole etch process, resulted a superior etch profile compare to the control group with a Mo/Cu/Mo symmetrical structure.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133347902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stability of conventional and elevated-metal metal-oxide (EMMO) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under AC bias stress is investigated. Superior stability of the EMMO TFTs is observed and attributed to the reduced deep acceptor-like trap states.
{"title":"Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under AC Bias Stress","authors":"Yilin Yang, Xiangyuan Yin, Mingxiang Wang, Dongli Zhang","doi":"10.1109/CAD-TFT.2018.8608113","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608113","url":null,"abstract":"Stability of conventional and elevated-metal metal-oxide (EMMO) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under AC bias stress is investigated. Superior stability of the EMMO TFTs is observed and attributed to the reduced deep acceptor-like trap states.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132171104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes a driving approach through adjusting both the supplying voltage and the data voltage signal according to the displayed images. It shown that the method can not only effectively reduce the static power consumption, but also help to improve the gray scale and compensation of the non-luminous uniformity.
{"title":"Dynamic Voltage Scaling for Low Power AMOLED Displays with Improved Luminous Uniformity","authors":"Xinghua Xu, Jiaqing Zhao, Qiaofeng Li, Jiali Fan, Xiaojun Guo","doi":"10.1109/CAD-TFT.2018.8608116","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608116","url":null,"abstract":"This paper proposes a driving approach through adjusting both the supplying voltage and the data voltage signal according to the displayed images. It shown that the method can not only effectively reduce the static power consumption, but also help to improve the gray scale and compensation of the non-luminous uniformity.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134484200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608102
W. Zhong, Guoyuan Li, Rongsheng Chen
Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.
{"title":"Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance","authors":"W. Zhong, Guoyuan Li, Rongsheng Chen","doi":"10.1109/CAD-TFT.2018.8608102","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608102","url":null,"abstract":"Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125727453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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