Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-8
U. Erkaboev, R. Rakhimov, N. Sayidov, U. Negmatov
For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a parabolic dispersion law. A mathematical expression is derived for calculating the dependence o f the distribution o f the Fermi-Dirac function on the magnetic field, on the thickness o f the quantum well and on the temperature in low-dimensional semiconductor materials. The possibility o f calculating the Fermi energy oscillations in two-dimensional electron gases at high temperatures and weak magnetic fields is shown for the first time. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.
{"title":"SIMULATION OF THE TEMPERATURE DEPENDENCE OF THE QUANTUM OSCILLATIONS’ EFFECTS IN 2D SEMICONDUCTOR MATERIALS","authors":"U. Erkaboev, R. Rakhimov, N. Sayidov, U. Negmatov","doi":"10.37681/2181-1652-019-x-2021-1-8","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-8","url":null,"abstract":"For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a parabolic dispersion law. A mathematical expression is derived for calculating the dependence o f the distribution o f the Fermi-Dirac function on the magnetic field, on the thickness o f the quantum well and on the temperature in low-dimensional semiconductor materials. The possibility o f calculating the Fermi energy oscillations in two-dimensional electron gases at high temperatures and weak magnetic fields is shown for the first time. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126886070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-6
F. Akbarov, R. Kabulov
The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a temperature range o f (32 • 60) оС. It was found that with an increase in temperature, the efficiency o f the solar photovoltaic module first decreases from 10.77% to 10.65%, and then increases to 10.97%, and the coefficient o f temperature dependence o f the efficiency in these regions differs and have values KEffi ~ - 0.18 % /К, and Kejp ~ + 0.13% /К
{"title":"FEATURES OF LOADING CHARACTERISTICS OF THE CIGS PHOTOELECTRIC MODULE WHEN OPERATING ON THE SURFACE OF THE LAW","authors":"F. Akbarov, R. Kabulov","doi":"10.37681/2181-1652-019-x-2021-1-6","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-6","url":null,"abstract":"The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a temperature range o f (32 • 60) оС. It was found that with an increase in temperature, the efficiency o f the solar photovoltaic module first decreases from 10.77% to 10.65%, and then increases to 10.97%, and the coefficient o f temperature dependence o f the efficiency in these regions differs and have values KEffi ~ - 0.18 % /К, and Kejp ~ + 0.13% /К","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116203972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-7
G. Gulyamov, P. Baymatov, B. Abdulazizov, M. Tokhirjonov
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into account the Landau level o f the second subband. It is shown that taking into account the cyclotron transition o f electrons within the second subband satisfactorily describes the experimental data obtained in strong magnetic fields in the heterostructure InAs/In0.81Ga0.19As/InxAl 1-xAs.
{"title":"CYCLOTRON TRANSITIONS AND ELECTRON MASS IN A WIDE INAS QUANTUM WELL IN STRONG MAGNETIC FIELDS","authors":"G. Gulyamov, P. Baymatov, B. Abdulazizov, M. Tokhirjonov","doi":"10.37681/2181-1652-019-x-2021-1-7","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-7","url":null,"abstract":"The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into account the Landau level o f the second subband. It is shown that taking into account the cyclotron transition o f electrons within the second subband satisfactorily describes the experimental data obtained in strong magnetic fields in the heterostructure InAs/In0.81Ga0.19As/InxAl 1-xAs.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121301287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-9
M. Sharibaev, Q. A. Ismailov, I. N. Karimov
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam epitaxy. Photoluminescent properties o f a series o f samples with single and multiple wells o f the same thickness and different composition as well as different thickness o f the same composition were studied. The spreading o f quantum wells after gamma-ray irradiation was studied.
{"title":"EFFECT OF у- IRRADIATION ON THE OPTICAL PROPERTIES OF ZnSe/ZnCdSe QUANTUM-DIMENSIONAL STRUCTURES","authors":"M. Sharibaev, Q. A. Ismailov, I. N. Karimov","doi":"10.37681/2181-1652-019-x-2021-1-9","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-9","url":null,"abstract":"In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam epitaxy. Photoluminescent properties o f a series o f samples with single and multiple wells o f the same thickness and different composition as well as different thickness o f the same composition were studied. The spreading o f quantum wells after gamma-ray irradiation was studied.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127430347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-2
S. Utamuradova, Sh K. Daliyev, M.B. Bekmuratov
The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f ytterbium atoms in the volume o f the silicon substrate leads to a decrease in the density o f surface states o f MIS - structures. It is found that the presence o f Yb atoms in the substrate does not lead to noticeable changes in the density distribution o f surface states o f Nss over the width o f the band gap Eg
{"title":"INFLUENCE OF YTTERBIUM IMPURITY ON THE GENERATION CHARACTERISTICS OF MDP STRUCTURES","authors":"S. Utamuradova, Sh K. Daliyev, M.B. Bekmuratov","doi":"10.37681/2181-1652-019-x-2021-1-2","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-2","url":null,"abstract":"The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f ytterbium atoms in the volume o f the silicon substrate leads to a decrease in the density o f surface states o f MIS - structures. It is found that the presence o f Yb atoms in the substrate does not lead to noticeable changes in the density distribution o f surface states o f Nss over the width o f the band gap Eg","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126425399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-3
A. Leĭderman, A. Saidov, Sh. N. Usmonov, J. M. Abdiyev
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was obtained. It has been shown that in linear graded semiconductors structures saturation current increases.
{"title":"INJECTION DIFFUSION PROCESSES IN THE WEAK LINEAR GRADED-BAND SEMICONDUCTOR ^-«-STRUCTURES","authors":"A. Leĭderman, A. Saidov, Sh. N. Usmonov, J. M. Abdiyev","doi":"10.37681/2181-1652-019-x-2021-1-3","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-3","url":null,"abstract":"Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was obtained. It has been shown that in linear graded semiconductors structures saturation current increases.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129656657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-4
R. Muminov, A. Saymbetov, Y.Q. Toshmurodov, M.O. Yavqochliyev
The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50 mm and with eight current-collecting bands o f 1.5 mm
本文介绍了基于单晶硅的Si(Li)二坐标灵敏辐射探测器的制造技术的主要成果，该探测器的尺寸为50*50 mm, 8个集流带为1.5 mm
{"title":"MANUFACTURING TECHNOLOGY FOR TWO-COORDINATE SENSITIVE SEMICONDUCTOR DETECTORS BASED ON LARGE-DIAMETER SINGLE-CRYSTAL SILICON","authors":"R. Muminov, A. Saymbetov, Y.Q. Toshmurodov, M.O. Yavqochliyev","doi":"10.37681/2181-1652-019-x-2021-1-4","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-4","url":null,"abstract":"The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50 mm and with eight current-collecting bands o f 1.5 mm","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117103862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-10
O. Tukfatullin, R. Muminov, K.A. Djumamuratov
In this paper three criteria for choosing power switches for DC-to-DC converter o f stand-alone photovoltaic system voltage inverter was discussed, that allowed to choose metal oxide semiconductor field-effect transistor IRF3808PbF with an n-channel as the most suitable power switch. It is shown that the criteria o f choice were based both on the technical characteristics o f the devices and the cost indicator
{"title":"SELECTION CRITERIA FOR POWER TRANSISTORS OF DC-TO-DC VOLTAGE INVERTER OF STAND-ALONE PHOTOVOLTAIC SYSTEM","authors":"O. Tukfatullin, R. Muminov, K.A. Djumamuratov","doi":"10.37681/2181-1652-019-x-2021-1-10","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-10","url":null,"abstract":"In this paper three criteria for choosing power switches for DC-to-DC converter o f stand-alone photovoltaic system voltage inverter was discussed, that allowed to choose metal oxide semiconductor field-effect transistor IRF3808PbF with an n-channel as the most suitable power switch. It is shown that the criteria o f choice were based both on the technical characteristics o f the devices and the cost indicator","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117023294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-5
Kh. S. Daliev, M. Onarkulov, S. Otajonov
A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it
{"title":"DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS","authors":"Kh. S. Daliev, M. Onarkulov, S. Otajonov","doi":"10.37681/2181-1652-019-x-2021-1-5","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-5","url":null,"abstract":"A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123717495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-28DOI: 10.37681/2181-1652-019-x-2021-1-1
S. Zainabidinov, N. Turgunov, Sh. K. Akbarov, E. Berkinov, D.Kh. Mamazhonova
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.
{"title":"DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si","authors":"S. Zainabidinov, N. Turgunov, Sh. K. Akbarov, E. Berkinov, D.Kh. Mamazhonova","doi":"10.37681/2181-1652-019-x-2021-1-1","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-1-1","url":null,"abstract":"The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132698655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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