Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-8
U. Erkaboev, N. Sayidov, J. Mirzaev, R. Rakhimov
In this article investigated the effects of a quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconducto r materials. It is shown that the Fermi energy of a nanoscale semiconductor material in a quantizing magnetic field is quantized. For the first time, a mathematical model was developed for determining the effect of temperature and a quantizing magnetic field on oscillations of the Fermi energy in nanoscale semiconductor structures with a parabolic dispersion law
{"title":"DETERMINATION OF THE TEMPERATURE DE PENDENCE OF THE FERMI ENERGY OSCILLATIONS IN NANOSTRUCTURED SE MICONDUCTOR MATERIALS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD","authors":"U. Erkaboev, N. Sayidov, J. Mirzaev, R. Rakhimov","doi":"10.37681/2181-1652-019-x-2021-2-8","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-8","url":null,"abstract":"In this article investigated the effects of a quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconducto r materials. It is shown that the Fermi energy of a nanoscale semiconductor material in a quantizing magnetic field is quantized. For the first time, a mathematical model was developed for determining the effect of temperature and a quantizing magnetic field on oscillations of the Fermi energy in nanoscale semiconductor structures with a parabolic dispersion law","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"42 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134050996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-5
G. Gulyamov, B.B. Shakhobiddinov, G. Majidova, F.R. Mukhiddinova
In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed
本文提出了在光场和微波场影响下pn结电流-电压特性变化的数学模型
{"title":"EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES","authors":"G. Gulyamov, B.B. Shakhobiddinov, G. Majidova, F.R. Mukhiddinova","doi":"10.37681/2181-1652-019-x-2021-2-5","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-5","url":null,"abstract":"In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129286411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-7
S. Utamuradova, E. M. Naurzalieva
The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained
{"title":"SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES","authors":"S. Utamuradova, E. M. Naurzalieva","doi":"10.37681/2181-1652-019-x-2021-2-7","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-7","url":null,"abstract":"The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115064471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-4
S. Daliev, F. A. Saparov
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer
{"title":"EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR","authors":"S. Daliev, F. A. Saparov","doi":"10.37681/2181-1652-019-x-2021-2-4","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-4","url":null,"abstract":"The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128886239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-6
V. Odzhaev, A. N. Petlitsky, V. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V. Yavid, Yu. N. Yankovsky, G. Mavlyanov, B. Ismaylov, Z. Kenzhaev
t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for changing the environment
{"title":"ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES","authors":"V. Odzhaev, A. N. Petlitsky, V. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V. Yavid, Yu. N. Yankovsky, G. Mavlyanov, B. Ismaylov, Z. Kenzhaev","doi":"10.37681/2181-1652-019-x-2021-2-6","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-6","url":null,"abstract":"t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for changing the environment","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127912895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-1
O. O. Mamatkarimov, R. Ikramov, B. H. Kuchkarov, K. Muminov
The analytical expression of the spectrum, derived for the region of exponential absorption of amorphous semiconductors, is investi gated. The parameters in this expression that determine the slope of the tails of the allowed bands are determined by fitting to the exponential absorption spectrum, which are determined experim entally. For the Davis-Mott approximation, a new formula is derived from the Kubo-Greenwood formula, which determines the densities of electronic states at the tail of the valence band. Using these formulas and the experimentally determined exponential absorption spectrum, it is shown that it is possible to determine the density of electronic states at the tail of the valence band
{"title":"EXPONENTIAL ABSORPTION SPECTRUM AND DENSITY DISTRIBUTION OF ELECTRONIC STATES ON THE TAIL OF THE VALENCE ZONE OF AMORPHOUS SEMICONDUCTORS","authors":"O. O. Mamatkarimov, R. Ikramov, B. H. Kuchkarov, K. Muminov","doi":"10.37681/2181-1652-019-x-2021-2-1","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-1","url":null,"abstract":"The analytical expression of the spectrum, derived for the region of exponential absorption of amorphous semiconductors, is investi gated. The parameters in this expression that determine the slope of the tails of the allowed bands are determined by fitting to the exponential absorption spectrum, which are determined experim entally. For the Davis-Mott approximation, a new formula is derived from the Kubo-Greenwood formula, which determines the densities of electronic states at the tail of the valence band. Using these formulas and the experimentally determined exponential absorption spectrum, it is shown that it is possible to determine the density of electronic states at the tail of the valence band","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130985757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-2
K. Ismailov, E. J. Kosbergenov
In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a temperature of 450 Ԩand durations t = 0.5÷25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters
{"title":"GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH","authors":"K. Ismailov, E. J. Kosbergenov","doi":"10.37681/2181-1652-019-x-2021-2-2","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-2","url":null,"abstract":"In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a temperature of 450 Ԩand durations t = 0.5÷25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114677450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-10
R. Aliev, J. Ziyoitdinov, J. Gulomov, M. Abduvohidov, B. Urmanov
the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined
{"title":"STUDYING THE INFLUENCE OF TEMPERATURE ON PHOTOELECTRIC PROCESSES IN SILICON SOLAR CELLS USING DIGITAL SIMULATION","authors":"R. Aliev, J. Ziyoitdinov, J. Gulomov, M. Abduvohidov, B. Urmanov","doi":"10.37681/2181-1652-019-x-2021-2-10","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-10","url":null,"abstract":"the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125618969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-3
N. Z. Khakimov, Alijon Razzokov
The article presents an analytical formula, theoretical results and calculations of statistically generalized moments of the elements of Mendeleev's peri odic table. For the elements of the periodic table, the results obtained for their radii and generalized moments are given, which provide the basis for scientific prediction of their so lubility in order to grow new solid semiconductor materials from the liquid phase
{"title":"THEORETICAL PREDICTIONS AND PREP ARATION OF SEMICONDUCTOR SOLIDS BASED ON A STATISTICAL GENERALIZED MOMENT","authors":"N. Z. Khakimov, Alijon Razzokov","doi":"10.37681/2181-1652-019-x-2021-2-3","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-3","url":null,"abstract":"The article presents an analytical formula, theoretical results and calculations of statistically generalized moments of the elements of Mendeleev's peri odic table. For the elements of the periodic table, the results obtained for their radii and generalized moments are given, which provide the basis for scientific prediction of their so lubility in order to grow new solid semiconductor materials from the liquid phase","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114937961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-30DOI: 10.37681/2181-1652-019-x-2021-2-9
S. Nasriddinov, O. Tukfatullin, M. Muydinova, M. Fozilova
n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved
{"title":"IMPROVEMENT OF OPTICAL PROPER TIES OF HIGH VOLTAGE MATRIX PHOTOELECTRIC DEVICES","authors":"S. Nasriddinov, O. Tukfatullin, M. Muydinova, M. Fozilova","doi":"10.37681/2181-1652-019-x-2021-2-9","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-9","url":null,"abstract":"n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124705453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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