Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029167
Xibo Zhang, S. Lam, P. Ko, M. Chan
A compact waffle MOSFET layout scheme is used to fabricate high-speed mixed-signal circuits and RF circuits. Due to the compactness of the waffle MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a 20-40% reduction in source/drain diffusion capacitance and gate resistance. This reduction results in more than 10% improvement in the propagation delay of buffer circuits and an increase in the unity-gain frequency and phase margin of a high-speed two-stage operational amplifier. An active inductor designed with compact waffle MOSFET also gets higher Q value.
{"title":"High-speed mixed signal and RF circuit design with compact waffle MOSFET","authors":"Xibo Zhang, S. Lam, P. Ko, M. Chan","doi":"10.1109/HKEDM.2002.1029167","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029167","url":null,"abstract":"A compact waffle MOSFET layout scheme is used to fabricate high-speed mixed-signal circuits and RF circuits. Due to the compactness of the waffle MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a 20-40% reduction in source/drain diffusion capacitance and gate resistance. This reduction results in more than 10% improvement in the propagation delay of buffer circuits and an increase in the unity-gain frequency and phase margin of a high-speed two-stage operational amplifier. An active inductor designed with compact waffle MOSFET also gets higher Q value.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130156236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029157
H. Ho, C. Chung, K. Ng, K. Cheng, S.Y. Wu
Based on the thermo-mechanical deformation property of shape memory alloys (SMAs), a nickel-titanium shape memory alloy (NiTi SMA) is used to construct an infrared imaging device. The NiTi SMA device is in the form of a thin film cantilever pixel. The absorption of energy from the impinging infrared radiation changes the horizontal tilt of the pixel due to the reverse martensitic transformation of NiTi SMA. The tilt angle change can be detected by illuminating the cantilever using a laser beam. One can therefore generate an IR image by monitoring the optical reflection from the thin film cantilever pixel. The possibility of realizing a practical low-cost infrared imaging device operating under room temperature conditions is envisaged.
{"title":"Application of shape memory alloy as detector material for far-infrared imaging transducers","authors":"H. Ho, C. Chung, K. Ng, K. Cheng, S.Y. Wu","doi":"10.1109/HKEDM.2002.1029157","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029157","url":null,"abstract":"Based on the thermo-mechanical deformation property of shape memory alloys (SMAs), a nickel-titanium shape memory alloy (NiTi SMA) is used to construct an infrared imaging device. The NiTi SMA device is in the form of a thin film cantilever pixel. The absorption of energy from the impinging infrared radiation changes the horizontal tilt of the pixel due to the reverse martensitic transformation of NiTi SMA. The tilt angle change can be detected by illuminating the cantilever using a laser beam. One can therefore generate an IR image by monitoring the optical reflection from the thin film cantilever pixel. The possibility of realizing a practical low-cost infrared imaging device operating under room temperature conditions is envisaged.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114308402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029168
Jun Wang, A. Wong
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim of reducing the effects of intermodulation distortion into a set of simple equations. The analysis consists of a theoretical study and simulation results. Analysis and simulations results reveal that the mechanism of intermodulation in balanced mixers is too complex to be represented by simple equations. Numerical methods must be used to predict the effects of intermodulation in balanced mixers.
{"title":"A study on theoretical representation of intermodulation in CMOS balanced mixers","authors":"Jun Wang, A. Wong","doi":"10.1109/HKEDM.2002.1029168","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029168","url":null,"abstract":"Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim of reducing the effects of intermodulation distortion into a set of simple equations. The analysis consists of a theoretical study and simulation results. Analysis and simulations results reveal that the mechanism of intermodulation in balanced mixers is too complex to be represented by simple equations. Numerical methods must be used to predict the effects of intermodulation in balanced mixers.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127979793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029164
H. Wong, K. Shin, M. Chan
In this paper, simulation results of the gate misalignment effects on the sub-threshold characteristics of asymmetric (ADG) and symmetric (SDG) double-gate MOSFET (DG-MOSFET) in the sub-100 nm regime are presented. Gates alignment in DG-MOSFETs becomes more and more difficult as devices are scaling down in non-self-aligned double-gate processes. The results show that gate misalignment effects are not as serious as generally expected and 60-80% misalignment is considered to be tolerable in some circuit applications.
{"title":"The gate misalignment effects of the sub-threshold characteristics of sub-100 nm DG-MOSFETs","authors":"H. Wong, K. Shin, M. Chan","doi":"10.1109/HKEDM.2002.1029164","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029164","url":null,"abstract":"In this paper, simulation results of the gate misalignment effects on the sub-threshold characteristics of asymmetric (ADG) and symmetric (SDG) double-gate MOSFET (DG-MOSFET) in the sub-100 nm regime are presented. Gates alignment in DG-MOSFETs becomes more and more difficult as devices are scaling down in non-self-aligned double-gate processes. The results show that gate misalignment effects are not as serious as generally expected and 60-80% misalignment is considered to be tolerable in some circuit applications.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127231087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029144
J. Kuo, Shih-Chia Lin
This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental data and the 2D simulation results, with a lower n-LDD doping density, the fringing electric field effect in the sidewall oxide spacer lowers the short-channel effect.
{"title":"The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure","authors":"J. Kuo, Shih-Chia Lin","doi":"10.1109/HKEDM.2002.1029144","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029144","url":null,"abstract":"This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental data and the 2D simulation results, with a lower n-LDD doping density, the fringing electric field effect in the sidewall oxide spacer lowers the short-channel effect.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117131924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029170
H. Ho, W. Wong, Shu-yuen Wu, E. Pun
The application of infrared-to-visible upconversion in rare earth (Ho/sup 3+//Yb/sup 3+/) co-doped TeO/sub x/ sol-gel thin film for optical storage has been investigated. Optical discs with the storage layer made from rare-earth co-doped TeO/sub x/ sol-gel thin films have been studied in terms of minimum bit-size and up-conversion efficiency. The possibility of a multi-layered architecture has also been investigated. The choice of using TeO/sub x/ thin films is based on the higher up-conversion efficiency in the rare earth doped chalcogenide glasses. The nonlinear properties of the up-conversion effect lead to the possibility of reducing the 'effective' spot size of the signal region, smaller than that limited by diffraction, hence leading to super-resolution in the storage layer and increased storage density.
{"title":"Optical storage disc based on the frequency up-conversion effect from rare earth ions","authors":"H. Ho, W. Wong, Shu-yuen Wu, E. Pun","doi":"10.1109/HKEDM.2002.1029170","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029170","url":null,"abstract":"The application of infrared-to-visible upconversion in rare earth (Ho/sup 3+//Yb/sup 3+/) co-doped TeO/sub x/ sol-gel thin film for optical storage has been investigated. Optical discs with the storage layer made from rare-earth co-doped TeO/sub x/ sol-gel thin films have been studied in terms of minimum bit-size and up-conversion efficiency. The possibility of a multi-layered architecture has also been investigated. The choice of using TeO/sub x/ thin films is based on the higher up-conversion efficiency in the rare earth doped chalcogenide glasses. The nonlinear properties of the up-conversion effect lead to the possibility of reducing the 'effective' spot size of the signal region, smaller than that limited by diffraction, hence leading to super-resolution in the storage layer and increased storage density.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129669436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029155
K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.
{"title":"Electrical characteristics of novel hafnium oxide film","authors":"K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong","doi":"10.1109/HKEDM.2002.1029155","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029155","url":null,"abstract":"Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129172293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029165
Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, C. Liu
Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBTs) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBTs is designed with non-uniform spacing. An efficient design procedure is presented. The calculated results show significant temperature reduction on non-uniform spacing devices.
{"title":"Design of multi-finger HBTs with a thermal-electrical model","authors":"Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, C. Liu","doi":"10.1109/HKEDM.2002.1029165","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029165","url":null,"abstract":"Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBTs) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBTs is designed with non-uniform spacing. An efficient design procedure is presented. The calculated results show significant temperature reduction on non-uniform spacing devices.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116287393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029159
Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin
A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.
{"title":"High-current injection in Spreading-Resistance Temperature sensor on SOI","authors":"Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin","doi":"10.1109/HKEDM.2002.1029159","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029159","url":null,"abstract":"A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133326390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029158
S.Y. Wu, H. Ho
It is well established that the surface plasmon resonance (SPR) optical sensor based on a metal-dielectric configuration can provide high sensitivity for many applications such as chemical and biological sensing. In fact the gold-dielectric configuration is most commonly used in the SPR sensor because of the fact that the thin gold layer can provide stable performance and good chemical resistance. In this paper, the characteristics of spectral SPR sensors that use composite silver/gold films for the transducing layer have been studied by using Fresnel formulas. Our simulations indicate that the optimal layer configuration for spectral SPR sensors should be gold(2 nm)-silver(48 nm)-dielectric for achieving best sensitivity.
{"title":"Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer","authors":"S.Y. Wu, H. Ho","doi":"10.1109/HKEDM.2002.1029158","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029158","url":null,"abstract":"It is well established that the surface plasmon resonance (SPR) optical sensor based on a metal-dielectric configuration can provide high sensitivity for many applications such as chemical and biological sensing. In fact the gold-dielectric configuration is most commonly used in the SPR sensor because of the fact that the thin gold layer can provide stable performance and good chemical resistance. In this paper, the characteristics of spectral SPR sensors that use composite silver/gold films for the transducing layer have been studied by using Fresnel formulas. Our simulations indicate that the optimal layer configuration for spectral SPR sensors should be gold(2 nm)-silver(48 nm)-dielectric for achieving best sensitivity.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126964862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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