Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029145
J. Liou, F. Schwierz
Most applications for radio frequency/microwave (hereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modem RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook for expected future developments and applications of RF transistors is given.
{"title":"RF/microwave transistors: evolution, current status, and future trend","authors":"J. Liou, F. Schwierz","doi":"10.1109/HKEDM.2002.1029145","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029145","url":null,"abstract":"Most applications for radio frequency/microwave (hereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modem RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook for expected future developments and applications of RF transistors is given.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133957150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029151
David C. T. Or, P. Lai, J. Sin, J. Xu
Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift in threshold voltage, a smaller decrease in peak transconductance and a smaller increase in subthreshold slope after the stress. This result shows that plasma nitridation has positive effects on the reliability of low-temperature-fabricated poly-Si TFTs, which play an important role nowadays in low-cost flat-panel display systems on glass.
{"title":"Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation","authors":"David C. T. Or, P. Lai, J. Sin, J. Xu","doi":"10.1109/HKEDM.2002.1029151","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029151","url":null,"abstract":"Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift in threshold voltage, a smaller decrease in peak transconductance and a smaller increase in subthreshold slope after the stress. This result shows that plasma nitridation has positive effects on the reliability of low-temperature-fabricated poly-Si TFTs, which play an important role nowadays in low-cost flat-panel display systems on glass.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123118434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029149
W. M. Cheung, C. Cheng, M. Poon, C. Kok, M. Chan
Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550/spl deg/C to 500/spl deg/C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.
{"title":"Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology","authors":"W. M. Cheung, C. Cheng, M. Poon, C. Kok, M. Chan","doi":"10.1109/HKEDM.2002.1029149","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029149","url":null,"abstract":"Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550/spl deg/C to 500/spl deg/C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127784555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029146
E. Pun
Progress in erbium doped waveguide devices has been significant over the past few years, and commercial products are now available. In this paper, planar rare earth doped waveguide amplifiers, including Er/sup 3+/ doped and Er/sup 3+//Yb/sup 3+/ codoped waveguide devices, for telecommunication applications are reviewed.
{"title":"Planar optical waveguide amplifiers","authors":"E. Pun","doi":"10.1109/HKEDM.2002.1029146","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029146","url":null,"abstract":"Progress in erbium doped waveguide devices has been significant over the past few years, and commercial products are now available. In this paper, planar rare earth doped waveguide amplifiers, including Er/sup 3+/ doped and Er/sup 3+//Yb/sup 3+/ codoped waveguide devices, for telecommunication applications are reviewed.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029147
T. Ng, J.B. Xu, G. Hu, W. Cheung, N. Ke, I. Wilson
High quality strontium titanate thin films on platinized Si(100) have been synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing technique at different temperatures. The films have shown good structural and electrical properties. The dielectric constant and dissipation factor at a frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film annealed at 650/spl deg/C. The capacitance versus applied voltage characteristic shows that the capacitance is almost independent of the applied voltage. The leakage current density is found to be in the order of 10/sup -7/ A/cm/sup 2/ for the film in an applied electric field of about 100 kV/cm.
{"title":"Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique","authors":"T. Ng, J.B. Xu, G. Hu, W. Cheung, N. Ke, I. Wilson","doi":"10.1109/HKEDM.2002.1029147","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029147","url":null,"abstract":"High quality strontium titanate thin films on platinized Si(100) have been synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing technique at different temperatures. The films have shown good structural and electrical properties. The dielectric constant and dissipation factor at a frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film annealed at 650/spl deg/C. The capacitance versus applied voltage characteristic shows that the capacitance is almost independent of the applied voltage. The leakage current density is found to be in the order of 10/sup -7/ A/cm/sup 2/ for the film in an applied electric field of about 100 kV/cm.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127784571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/HKEDM.2002.1029161
M. Chan, X. Xi, Jin He, C. Hu
This paper attempts to provide a general guideline to develop a practical model for MOSFETs in the sub 0,1 /spl mu/m generations. It starts by giving an overview of the different modeling approaches and options including charge based approach, surface potential based approach, and conductance based approach. Their relative advantages and weaknesses will be discussed. The evolution of the BSIM models from its first generation to the most recent release will be used as an example for the development of a practical device model. It will be followed by a discussion on how the accelerated technology development may impact the traditional modeling approaches. A new paradigm to incorporate modem software engineering methodology to shorten model development cycle will be presented.
本文试图提供一个通用的指导方针，以开发一个实用的模型，在sub,1 /spl μ m /m代mosfet。首先概述了不同的建模方法和选项，包括基于电荷的方法、基于表面电位的方法和基于电导的方法。他们的相对优势和劣势将被讨论。BSIM模型从第一代到最新版本的演变将被用作开发实用设备模型的示例。随后将讨论加速的技术发展如何影响传统的建模方法。提出了一种结合现代软件工程方法来缩短模型开发周期的新范例。
{"title":"Approaches and options for modeling sub-0.1 /spl mu/m CMOS devices","authors":"M. Chan, X. Xi, Jin He, C. Hu","doi":"10.1109/HKEDM.2002.1029161","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029161","url":null,"abstract":"This paper attempts to provide a general guideline to develop a practical model for MOSFETs in the sub 0,1 /spl mu/m generations. It starts by giving an overview of the different modeling approaches and options including charge based approach, surface potential based approach, and conductance based approach. Their relative advantages and weaknesses will be discussed. The evolution of the BSIM models from its first generation to the most recent release will be used as an example for the development of a practical device model. It will be followed by a discussion on how the accelerated technology development may impact the traditional modeling approaches. A new paradigm to incorporate modem software engineering methodology to shorten model development cycle will be presented.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129575848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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