Antimony selenosulfide (Sb2(S,Se)3) has recently emerged as an attractive thin-film photovoltaic absorber because of its tunable bandgap, excellent optoelectronic properties, and long-term stability. Hydrothermal synthesis using separate Sb, Se, and S precursors enables the direct preparation of ternary Sb2(S,Se)3 thin films, and photovoltaic devices with efficiencies above 10% have been reported. However, due to the higher chemical reactivity of selenium compared to sulfur, the incorporation of Se occurs much faster, leading to compositional inhomogeneity with selenide enrichment near the electron transport interface. This reaction characteristic produces a reverse bandgap gradient that is detrimental to charge extraction. In this study, we unveil a kinetic modulation strategy by employing thiourea (TU) as a multifunctional additive to precisely regulate precursor reaction pathways during hydrothermal growth. TU coordinating with SSeO32− intermediates generate stable complexes, thereby suppressing uncontrolled selenide release and achieving a balanced Se/S incorporation. This manipulation engenders Sb2(S,Se)3 films with homogenized bandgap distributions, well-aligned interfacial energetics, and substantially reduced defect densities. Consequently, the optimized devices attain a power conversion efficiency of 10.83%, representing the state-of-the-art performance for Sb2(S,Se)3 photovoltaics. This study establishes a novel method for in situ bandgap homogenization and deepens the synthetic mechanism regarding mixed-anion chalcogenide thin films.
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