Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714177
T. Wcislo, M. Dąbrowska-szata, L. Gelczuk
In the paper, finite element methodology applied to critical thickness calculation has been presented. Semiconductor heterostructures have been applied to many electronic and optoelectronic devices. The performance and properties of epitaxial semiconductor thin film depend on the defects structure and stress-state of the film. During epitaxial growth first few layers are coherent with a substrate crystalline structure. As film thickness increases, growing stress causes nucleation of dislocations. This partially relaxes the strain due to lattice mismatch. A thickness at which this occurs is defined as a critical thickness. Calculation of critical thickness for the nucleation has been a subject of considerable study since the pioneering work of Frank and Van der Merve. Finite Element Method (FEM) is used to simulate the strained epitaxial layer and the substrate. Finally, approach to calculate the critical thickness on the basis of energy balance approach is presented.
本文介绍了有限元法在临界厚度计算中的应用。半导体异质结构已应用于许多电子和光电子器件中。外延半导体薄膜的性能和性能取决于薄膜的缺陷结构和应力状态。在外延生长过程中，前几层与衬底晶体结构相一致。随着薄膜厚度的增加，应力的增大引起位错的形核。这部分地松弛了由于晶格不匹配造成的应变。发生这种情况的厚度被定义为临界厚度。自Frank和Van der Merve的开创性工作以来，临界成核厚度的计算一直是一个相当重要的研究课题。采用有限元法对应变外延层和衬底进行了模拟。最后，提出了基于能量平衡法的临界厚度计算方法。
{"title":"Critical thickness of epitaxial thin films using Finite Element Method","authors":"T. Wcislo, M. Dąbrowska-szata, L. Gelczuk","doi":"10.1109/STYSW.2010.5714177","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714177","url":null,"abstract":"In the paper, finite element methodology applied to critical thickness calculation has been presented. Semiconductor heterostructures have been applied to many electronic and optoelectronic devices. The performance and properties of epitaxial semiconductor thin film depend on the defects structure and stress-state of the film. During epitaxial growth first few layers are coherent with a substrate crystalline structure. As film thickness increases, growing stress causes nucleation of dislocations. This partially relaxes the strain due to lattice mismatch. A thickness at which this occurs is defined as a critical thickness. Calculation of critical thickness for the nucleation has been a subject of considerable study since the pioneering work of Frank and Van der Merve. Finite Element Method (FEM) is used to simulate the strained epitaxial layer and the substrate. Finally, approach to calculate the critical thickness on the basis of energy balance approach is presented.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128436703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714165
K. Broczkowska, Jolanta Klocek, D. Friedrich, K. Henkel, K. Kolanek, A. Urbanowicz, D. Schmeißer, Mirosław Miller, E. Zschech
Fullerene-based materials are considered to be a candidate for ultra-low-k material applications. We have incorporated fullerene C60 into a siloxane material by means of the sol-gel method. Thickness of obtained film was investigated by atomic force microscope, dielectric constant was measured by the capacitance-voltage characterization (CV). Interactions between the components within the films were investigated by using X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy. We found that the ratio of carbon, oxygen and silicon atoms within obtained film equals 2.7∶1.9∶1. The microscopic and CV investigations show that the sample's composition is inhomogenous although the fullerene's concentration within the material is low. However, dielectric constant is in the range of 2.3 to 2.5.
{"title":"Fullerene based materials for ultra-low-k application","authors":"K. Broczkowska, Jolanta Klocek, D. Friedrich, K. Henkel, K. Kolanek, A. Urbanowicz, D. Schmeißer, Mirosław Miller, E. Zschech","doi":"10.1109/STYSW.2010.5714165","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714165","url":null,"abstract":"Fullerene-based materials are considered to be a candidate for ultra-low-k material applications. We have incorporated fullerene C60 into a siloxane material by means of the sol-gel method. Thickness of obtained film was investigated by atomic force microscope, dielectric constant was measured by the capacitance-voltage characterization (CV). Interactions between the components within the films were investigated by using X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy. We found that the ratio of carbon, oxygen and silicon atoms within obtained film equals 2.7∶1.9∶1. The microscopic and CV investigations show that the sample's composition is inhomogenous although the fullerene's concentration within the material is low. However, dielectric constant is in the range of 2.3 to 2.5.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130638399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714178
D. Wojcieszak, D. Kaczmarek, J. Domaradzki, E. Prociów, F. Placido, S. Lapp, M. Mazur
In this work influence of terbium dopant on hardness of nanocrystalline TiO2 thin films have been investigated. Thin films were manufactured by high energy reactive magnetron sputtering process. The structure of TiO2-matrix was modified by doping with 0.4 at. % of Tb. Undoped matrix had directly after deposition TiO2-rutile structure with 8.7 nm crystallites in size, while doping with Tb results in anatase structure with 11.7 nm crystallite sizes. Hardness of undoped nanocrystalline matrix was 14.3 GPa, which is two-times higher as-compared to standard TiO2 coatings. Incorporation of terbium into the matrix results in hardness decrease down to 10.7 GPa, what was directly connected with smaller density of the anatase as-compared to rutile structure.
{"title":"Hardness of nanocrystalline TiO2 thin films doped with terbium","authors":"D. Wojcieszak, D. Kaczmarek, J. Domaradzki, E. Prociów, F. Placido, S. Lapp, M. Mazur","doi":"10.1109/STYSW.2010.5714178","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714178","url":null,"abstract":"In this work influence of terbium dopant on hardness of nanocrystalline TiO2 thin films have been investigated. Thin films were manufactured by high energy reactive magnetron sputtering process. The structure of TiO2-matrix was modified by doping with 0.4 at. % of Tb. Undoped matrix had directly after deposition TiO2-rutile structure with 8.7 nm crystallites in size, while doping with Tb results in anatase structure with 11.7 nm crystallite sizes. Hardness of undoped nanocrystalline matrix was 14.3 GPa, which is two-times higher as-compared to standard TiO2 coatings. Incorporation of terbium into the matrix results in hardness decrease down to 10.7 GPa, what was directly connected with smaller density of the anatase as-compared to rutile structure.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"303 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124327179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714157
H. Tetrycz, M. Byrczek, O. Rac
We present a method for the synthesis of monodispersive ZnO colloidal spheres. The colloidal spheres are made from the solution of zinc acetate and polyethylene glycol (PEG) in the temperature 135°C. The obtained structures were investigated with scanning electron microscope (SEM) and transmission electron microscope. The structures received in the process are spheres with diameter 300 nm-1 µm. ZnO nanospheres have plenty of possibilities of application, for example in gas sensors or as a self-assembled material in photonic crystals.
{"title":"Synthesis of zinc oxide nanospheres","authors":"H. Tetrycz, M. Byrczek, O. Rac","doi":"10.1109/STYSW.2010.5714157","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714157","url":null,"abstract":"We present a method for the synthesis of monodispersive ZnO colloidal spheres. The colloidal spheres are made from the solution of zinc acetate and polyethylene glycol (PEG) in the temperature 135°C. The obtained structures were investigated with scanning electron microscope (SEM) and transmission electron microscope. The structures received in the process are spheres with diameter 300 nm-1 µm. ZnO nanospheres have plenty of possibilities of application, for example in gas sensors or as a self-assembled material in photonic crystals.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122408572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714164
Ulrich Fischer-Hirchert, Jens-Uwe Just, C. Reinboth
Polymer optical fibers (POF) can be used for a large number of applications, most notably for data transmission. Although POF are used for a lot of medical as well as scientific applications, the technology is - as of yet - almost unknown to the contemporary consumer market.
{"title":"A short introduction of the POF usability lab at Harz University","authors":"Ulrich Fischer-Hirchert, Jens-Uwe Just, C. Reinboth","doi":"10.1109/STYSW.2010.5714164","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714164","url":null,"abstract":"Polymer optical fibers (POF) can be used for a large number of applications, most notably for data transmission. Although POF are used for a lot of medical as well as scientific applications, the technology is - as of yet - almost unknown to the contemporary consumer market.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131055823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714169
M. Mazur, J. Domaradzki, D. Kaczmarek, K. Sieradzka, Jolanta Huk, Marta Karnicka, Lukasz Bielinski
Static electricity arises when two materials in contact are separated after rubbing and the speed of charge movement on surface is slow. Retained electrostatic charge on the surface of materials can create risks and problems in many areas of industry, for example films and light fabrics cling can attract airborne dust or semiconductor devices may be damaged. Therefore electrostatic dissipative and antistatic additives are used in many applications to avoid risks from static electricity. In case of optical lenses antistatic coatings can be used to avoid accumulation of static charge on their surfaces. Quantity of the charge deposited on samples surface and how quickly deposited charge migrated away from the surface was measured using fast response electrostatic fieldmeter. In this work the antistatic properties of optical lenses coated with different antireflective coatings were investigated and their ability to dissipate static electricity was determined. Static dissipation properties were investigated in relation to corona discharge time changes. It has been shown that increasing corona discharge time affected badly on charge decay time of optical lenses.
{"title":"Investigation of antistatic properties of spectacle lenses with antireflective coatings","authors":"M. Mazur, J. Domaradzki, D. Kaczmarek, K. Sieradzka, Jolanta Huk, Marta Karnicka, Lukasz Bielinski","doi":"10.1109/STYSW.2010.5714169","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714169","url":null,"abstract":"Static electricity arises when two materials in contact are separated after rubbing and the speed of charge movement on surface is slow. Retained electrostatic charge on the surface of materials can create risks and problems in many areas of industry, for example films and light fabrics cling can attract airborne dust or semiconductor devices may be damaged. Therefore electrostatic dissipative and antistatic additives are used in many applications to avoid risks from static electricity. In case of optical lenses antistatic coatings can be used to avoid accumulation of static charge on their surfaces. Quantity of the charge deposited on samples surface and how quickly deposited charge migrated away from the surface was measured using fast response electrostatic fieldmeter. In this work the antistatic properties of optical lenses coated with different antireflective coatings were investigated and their ability to dissipate static electricity was determined. Static dissipation properties were investigated in relation to corona discharge time changes. It has been shown that increasing corona discharge time affected badly on charge decay time of optical lenses.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129635412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714179
M. Maciejewski, D. Wojcieszak, M. Mazur, M. Zielinski, D. Kaczmarek, J. Domaradzki, E. Prociów
Nowadays, much attention is paid to thin films surface wettability parameter. Hydrophobic coatings are well used for water repellant materials, while hydrophilic thin films are often used in anti-fogging applications. Titanium dioxide is one of the best materials for thin film coatings applications, due to its electrical, optical, chemical and physical properties such as photocatalysis, high transparency in visible light or high hardness. In this paper, surface wettability of TiO2 thin films was researched. Influence of droplet size and sample preparation method on calculation of contact angle was investigated. It was concluded, that pre- measurement sample handling as well as measurement procedure had huge impact on obtained results.
{"title":"Influence of droplet size and surface preparation of TiO2 on contact angle determination","authors":"M. Maciejewski, D. Wojcieszak, M. Mazur, M. Zielinski, D. Kaczmarek, J. Domaradzki, E. Prociów","doi":"10.1109/STYSW.2010.5714179","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714179","url":null,"abstract":"Nowadays, much attention is paid to thin films surface wettability parameter. Hydrophobic coatings are well used for water repellant materials, while hydrophilic thin films are often used in anti-fogging applications. Titanium dioxide is one of the best materials for thin film coatings applications, due to its electrical, optical, chemical and physical properties such as photocatalysis, high transparency in visible light or high hardness. In this paper, surface wettability of TiO2 thin films was researched. Influence of droplet size and sample preparation method on calculation of contact angle was investigated. It was concluded, that pre- measurement sample handling as well as measurement procedure had huge impact on obtained results.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128660989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714167
M. Fiedot, H. Teterycz, P. Halek, M. Malewicz
In this paper we presented influence of acidity on nanopowder structure prepared in reaction of precipitation. Zinc oxide was prepared from zinc nitrate and sodium hydroxide with the participation of the microwave field. The investigation revealed that the grain size of zinc oxide and their microstructure significantly depends on the solution pH. The microstructures obtained in the more alkaline reaction conditions have greater the aspect ratio.
{"title":"Effect of acidic environment on the shape and size of the 1D nano-and microstructures of zinc oxide","authors":"M. Fiedot, H. Teterycz, P. Halek, M. Malewicz","doi":"10.1109/STYSW.2010.5714167","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714167","url":null,"abstract":"In this paper we presented influence of acidity on nanopowder structure prepared in reaction of precipitation. Zinc oxide was prepared from zinc nitrate and sodium hydroxide with the participation of the microwave field. The investigation revealed that the grain size of zinc oxide and their microstructure significantly depends on the solution pH. The microstructures obtained in the more alkaline reaction conditions have greater the aspect ratio.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128230114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714172
M. Ramiączek-Krasowska, J. Prażmowska, A. Szyszka, R. Paszkiewicz, M. Tlaczala
The lithography as a basic process determines properties of microelectronic device. The main area of investigation is the resolution of the lithography operation. The resolution of optical lithography is insufficient for creation of gate electrodes in dedicated to high frequency operation transistors. The scaling ability causes increased interest in using of atomic force microscope (AFM) as nanolithography tool. In the paper, the results of the nanoscratching lithography by using AFM are presented. In this method a pattern is created in mechanical interaction of the AFM tip and the samples surface.
{"title":"Application of AFM microscope as a nanolithography tool","authors":"M. Ramiączek-Krasowska, J. Prażmowska, A. Szyszka, R. Paszkiewicz, M. Tlaczala","doi":"10.1109/STYSW.2010.5714172","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714172","url":null,"abstract":"The lithography as a basic process determines properties of microelectronic device. The main area of investigation is the resolution of the lithography operation. The resolution of optical lithography is insufficient for creation of gate electrodes in dedicated to high frequency operation transistors. The scaling ability causes increased interest in using of atomic force microscope (AFM) as nanolithography tool. In the paper, the results of the nanoscratching lithography by using AFM are presented. In this method a pattern is created in mechanical interaction of the AFM tip and the samples surface.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127813910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714168
M. Mazur, J. Domaradzki, D. Kaczmarek, S. Moh, F. Placido
Transparent conducting indium-tin oxide (ITO) thin films play a very important role in the field of optoelectronic devices such as photovoltaic cells and flat panel display devices. ITO films display low electrical resistance and high transmittance in the visible range of the optical spectrum [1].
{"title":"Sheet resistance and optical properties of ITO thin films deposited by magnetron sputtering with different O2/Ar flow ratio","authors":"M. Mazur, J. Domaradzki, D. Kaczmarek, S. Moh, F. Placido","doi":"10.1109/STYSW.2010.5714168","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714168","url":null,"abstract":"Transparent conducting indium-tin oxide (ITO) thin films play a very important role in the field of optoelectronic devices such as photovoltaic cells and flat panel display devices. ITO films display low electrical resistance and high transmittance in the visible range of the optical spectrum [1].","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125625161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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