Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714180
Jakub Wyrodek, M. Tallarida, M. Weisheit, D. Schmeißer
The interfacial layers of high dielectric constant (high - k) nanolaminate films are here explored. Problems concerning ALD nanolaminate layers deals mainly with lack of accurate methods to determine in depth profile of few nm thick stacks. Angle Dependent XPS (ADXPS) is proposed as method suitable in layer profiling. Studied stacks containing industrial grown ZrO2/HfO2 films( d∼3nm) were processed with various parameters resulting in both, layer by layer and homogenous depositions. For those and pure HfOx samples exsitu XPS, with angle dependent variation of probing depth, measurements were covered. By comparing obtained intensity ratios for different angles with computational developed stack model it was found that no simple layer by layer but some intermixing growth occurred including interaction with substrate and diffusion of silicon.
{"title":"Determination of interfacial layers in high-k nanomaterials by ADXPS measurements","authors":"Jakub Wyrodek, M. Tallarida, M. Weisheit, D. Schmeißer","doi":"10.1109/STYSW.2010.5714180","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714180","url":null,"abstract":"The interfacial layers of high dielectric constant (high - k) nanolaminate films are here explored. Problems concerning ALD nanolaminate layers deals mainly with lack of accurate methods to determine in depth profile of few nm thick stacks. Angle Dependent XPS (ADXPS) is proposed as method suitable in layer profiling. Studied stacks containing industrial grown ZrO2/HfO2 films( d∼3nm) were processed with various parameters resulting in both, layer by layer and homogenous depositions. For those and pure HfOx samples exsitu XPS, with angle dependent variation of probing depth, measurements were covered. By comparing obtained intensity ratios for different angles with computational developed stack model it was found that no simple layer by layer but some intermixing growth occurred including interaction with substrate and diffusion of silicon.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124246474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714158
J. Domaradzki, S. Lis, D. Kaczmarek, S. Patela
In the present work usefulness of spectrophotometry and ellipsometry for the determination of different parameters of optical thin films have been discussed. The principles of their operation and some exemplary results for TiO2 thin films deposited by magnetron sputtering are presented.
{"title":"Application of spectrophotometry and ellipsometry for determination of optical parameters of optical coating thin films","authors":"J. Domaradzki, S. Lis, D. Kaczmarek, S. Patela","doi":"10.1109/STYSW.2010.5714158","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714158","url":null,"abstract":"In the present work usefulness of spectrophotometry and ellipsometry for the determination of different parameters of optical thin films have been discussed. The principles of their operation and some exemplary results for TiO2 thin films deposited by magnetron sputtering are presented.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126415037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714166
S. Lis, W. Dawidowski, M. Wielichowski, K. Ptasínski, S. Patela
The results of 3D FDTD calculations of out-of-plane radiation losses in slow light regime for a 2D Silicon-On-Insulator (SOI) Photonic Crystal (PhC) slab are presented. In a 2D PhC slab structure periodicity causes a scattering out of waveguiding modes to the radiating modes. Optical sensors based on 2D PhCs working in slow light regime call for long devices in order to make the path of light propagation longer. At the same time, slowing down the group velocity of light extends signal interaction time with the investigated surroundings. By using a 3D model of an SOI PhC slab we will present the influence of the hole depth and side walls slope of a 2D PhC on the out-of-plane scattering. The possibility of utilising an interference lithograph to fabricate the modelled structure is discussed as well.
{"title":"Modelling of out-of-plane losses in a 2D photonic crystal waveguiding structure fabricated by interference lithography in slow light regime","authors":"S. Lis, W. Dawidowski, M. Wielichowski, K. Ptasínski, S. Patela","doi":"10.1109/STYSW.2010.5714166","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714166","url":null,"abstract":"The results of 3D FDTD calculations of out-of-plane radiation losses in slow light regime for a 2D Silicon-On-Insulator (SOI) Photonic Crystal (PhC) slab are presented. In a 2D PhC slab structure periodicity causes a scattering out of waveguiding modes to the radiating modes. Optical sensors based on 2D PhCs working in slow light regime call for long devices in order to make the path of light propagation longer. At the same time, slowing down the group velocity of light extends signal interaction time with the investigated surroundings. By using a 3D model of an SOI PhC slab we will present the influence of the hole depth and side walls slope of a 2D PhC on the out-of-plane scattering. The possibility of utilising an interference lithograph to fabricate the modelled structure is discussed as well.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127713103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714175
Lukasz Starzyk, M. Tallarida, D. Schmeißer
Band alignment of high-к/SiO2/Si stacks incorporating Zr and Al oxides for advanced MOS technology is explored. Because of requirements concerning continued scaling of MOSFET transistors, gate oxides were grown in situ on Si(001) substrate by means of atomic layer deposition (ALD) process using respectively TDMAZr and TMA as metal precursors and ultra pure H2O as oxygen source. The thicknesses of high-к films were around 1–2 nm. We applied synchrotron radiation based X-ray photoelectron spectroscopy (SR XPS) at the undulator beam line U49/2-PGM2 (BESSY, Berlin) to characterize our samples, which allows step by step in situ investigations. In this way thanks to our (in situ)2 approach we are able to improve functional properties of our thin films by controlling sample preparation process. Si 2p, O 1s, Zr 3d, Al 2p core levels and valence band (VB) spectra were recorded and analyzed. As a result, we determined chemical composition, growth rate and electronic band structure. We found the formation of interface dipole as well as the existence of space charge regime as deduced from continuous shift of the VB maximum with increasing layer thickness.
{"title":"Band alignment of high-к/SiO2/Si stacks incorporating Zr and Al oxides prepared by atomic layer deposition","authors":"Lukasz Starzyk, M. Tallarida, D. Schmeißer","doi":"10.1109/STYSW.2010.5714175","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714175","url":null,"abstract":"Band alignment of high-к/SiO2/Si stacks incorporating Zr and Al oxides for advanced MOS technology is explored. Because of requirements concerning continued scaling of MOSFET transistors, gate oxides were grown in situ on Si(001) substrate by means of atomic layer deposition (ALD) process using respectively TDMAZr and TMA as metal precursors and ultra pure H2O as oxygen source. The thicknesses of high-к films were around 1–2 nm. We applied synchrotron radiation based X-ray photoelectron spectroscopy (SR XPS) at the undulator beam line U49/2-PGM2 (BESSY, Berlin) to characterize our samples, which allows step by step in situ investigations. In this way thanks to our (in situ)2 approach we are able to improve functional properties of our thin films by controlling sample preparation process. Si 2p, O 1s, Zr 3d, Al 2p core levels and valence band (VB) spectra were recorded and analyzed. As a result, we determined chemical composition, growth rate and electronic band structure. We found the formation of interface dipole as well as the existence of space charge regime as deduced from continuous shift of the VB maximum with increasing layer thickness.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132610313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714176
L. Sznitko, J. Myśliwiec, A. Sobolewska, S. Bartkiewicz, A. Miniewicz
We present studies on amplified spontaneous emission (ASE) and lasing phenomena obtained in two layers structure based on photochromic polymer and biopolymer system. A top layer was made of the deoxyribonucleic-acid with cetyltrimethyl-ammonium chloride cationic surfactant molecules (DNA-CTMA) doped with the Rhodamine 6G (Rh6G) laser dye and served as an “active” layer for laser emission. For a bottom layer we have chosen the L-21+TDI potochromic polymer in which the surface relief grating (SRG) was inscribed using holographic method to achieve effective refractive index modulation of the “active” layer. For the sample excitation doubled in frequency nanosecond pulse Nd∶YAG laser light (λ = 532 nm) was used. The threshold energy density of laser emission was ρ = 1.8 mJ/cm2 and for ASE ρ = 3.5 mJ/cm2.
{"title":"Laser emission in a hybrid biopolymer — Photochromic polymer structure","authors":"L. Sznitko, J. Myśliwiec, A. Sobolewska, S. Bartkiewicz, A. Miniewicz","doi":"10.1109/STYSW.2010.5714176","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714176","url":null,"abstract":"We present studies on amplified spontaneous emission (ASE) and lasing phenomena obtained in two layers structure based on photochromic polymer and biopolymer system. A top layer was made of the deoxyribonucleic-acid with cetyltrimethyl-ammonium chloride cationic surfactant molecules (DNA-CTMA) doped with the Rhodamine 6G (Rh6G) laser dye and served as an “active” layer for laser emission. For a bottom layer we have chosen the L-21+TDI potochromic polymer in which the surface relief grating (SRG) was inscribed using holographic method to achieve effective refractive index modulation of the “active” layer. For the sample excitation doubled in frequency nanosecond pulse Nd∶YAG laser light (λ = 532 nm) was used. The threshold energy density of laser emission was ρ = 1.8 mJ/cm2 and for ASE ρ = 3.5 mJ/cm2.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134438737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714163
M. Haupt, A. Zufelde, U. Fischer
POFs (polymer optical fibers) gradually replace traditional communication media such as copper and glass within short distance communication systems. Primarily, this is due to their cost-effectiveness and easy handling.
{"title":"Cost-effective injection-moulded coupler for POF communication","authors":"M. Haupt, A. Zufelde, U. Fischer","doi":"10.1109/STYSW.2010.5714163","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714163","url":null,"abstract":"POFs (polymer optical fibers) gradually replace traditional communication media such as copper and glass within short distance communication systems. Primarily, this is due to their cost-effectiveness and easy handling.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133142560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714171
K. Ptasínski, S. Lis, M. Wielichowski, S. Patela
In the following paper, designing, modeling and optimizing an optical coupler based on titanium dioxide TiO2 is described. A rectangular diffraction grating integrated with a TiO2 waveguide is modeled. The optimized parameter is the coupling efficiency. The following parameters are also considered: coupler length, grating period, and grating etching depth. Critical values of grating filling factor preventing the coupling of light into the structure are determined. Finally, parameters of a structure showing the best coupling efficiency are presented.
{"title":"Modeling and optimization of grating coupler for slab waveguide","authors":"K. Ptasínski, S. Lis, M. Wielichowski, S. Patela","doi":"10.1109/STYSW.2010.5714171","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714171","url":null,"abstract":"In the following paper, designing, modeling and optimizing an optical coupler based on titanium dioxide TiO2 is described. A rectangular diffraction grating integrated with a TiO2 waveguide is modeled. The optimized parameter is the coupling efficiency. The following parameters are also considered: coupler length, grating period, and grating etching depth. Critical values of grating filling factor preventing the coupling of light into the structure are determined. Finally, parameters of a structure showing the best coupling efficiency are presented.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129055284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714170
Damian Nowak, S. Sawicki, A. Dziedzic
Ceramic technologies, especially LTCC (Low Temperature Co-fired Ceramics), offer a reliable platform to build highly stable and reliable sensors and packages, possible for application in harsh environment such as high temperature, high pressure, aggressive media and space. LTCC allows also to fabricate resistors, capacitors, inductors, heaters and many other passive components buried within ceramic substrate. In this paper package for SiC-based hydrogen sensor is presented. Heater located inside package heats the gas sensor whereas temperature sensor allows to control current temperature. Moreover package enables electric connection between SiC-based sensor and outside contacts. It also protects wire connection against mechanical destruction. The temperature field distribution was simulated. Moreover, the effect of pulse temperature changes and long-term ageing on electrical parameters of heater were investigated. Basic electrical parameters of integrated heater as well as temperature field distribution on sensor surface were presented, too.
{"title":"High temperature LTCC package for gas sensor","authors":"Damian Nowak, S. Sawicki, A. Dziedzic","doi":"10.1109/STYSW.2010.5714170","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714170","url":null,"abstract":"Ceramic technologies, especially LTCC (Low Temperature Co-fired Ceramics), offer a reliable platform to build highly stable and reliable sensors and packages, possible for application in harsh environment such as high temperature, high pressure, aggressive media and space. LTCC allows also to fabricate resistors, capacitors, inductors, heaters and many other passive components buried within ceramic substrate. In this paper package for SiC-based hydrogen sensor is presented. Heater located inside package heats the gas sensor whereas temperature sensor allows to control current temperature. Moreover package enables electric connection between SiC-based sensor and outside contacts. It also protects wire connection against mechanical destruction. The temperature field distribution was simulated. Moreover, the effect of pulse temperature changes and long-term ageing on electrical parameters of heater were investigated. Basic electrical parameters of integrated heater as well as temperature field distribution on sensor surface were presented, too.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124404376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714162
P. Halek, G. Halek, H. Teterycz
A preparation method of gold doped tungsten trioxide using silicotungstic acid and chloroauric acid is shown in this work. The microstructure of this gas sensing material was investigated under a scanning electron microscope. Electrical parameters of the material were study in a width range of temperatures and humidity. The obtained results reveal, that the humidity can both increase and decrease the conductivity of the sensing material. The direction of the changes depend on the dominant effect occurring at the material.
{"title":"Influence of humidity on parameters of gold doped tungsten trioxide","authors":"P. Halek, G. Halek, H. Teterycz","doi":"10.1109/STYSW.2010.5714162","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714162","url":null,"abstract":"A preparation method of gold doped tungsten trioxide using silicotungstic acid and chloroauric acid is shown in this work. The microstructure of this gas sensing material was investigated under a scanning electron microscope. Electrical parameters of the material were study in a width range of temperatures and humidity. The obtained results reveal, that the humidity can both increase and decrease the conductivity of the sensing material. The direction of the changes depend on the dominant effect occurring at the material.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124842417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-25DOI: 10.1109/STYSW.2010.5714160
K. Gajewski, G. Wielgoszewski
In the modern world, the influence the optoelectronic devices on the communications methods are still increasing. Therefore it is very important to find appropriate techniques for design, building, testing, measuring and packaging.
{"title":"Methods of investigation of the properties of the optoelectronic devices with use of atomic force microscopy","authors":"K. Gajewski, G. Wielgoszewski","doi":"10.1109/STYSW.2010.5714160","DOIUrl":"https://doi.org/10.1109/STYSW.2010.5714160","url":null,"abstract":"In the modern world, the influence the optoelectronic devices on the communications methods are still increasing. Therefore it is very important to find appropriate techniques for design, building, testing, measuring and packaging.","PeriodicalId":160376,"journal":{"name":"2010 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123415061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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