In this paper, Cs2NaRECl6 (RE = Yb0.9Er0.1, Tb, Eu) microncrystals (MCs) were synthesized via a facile solvent-thermal method with the ethanol-water mixture (95.6∶4.4, m/m) as solvent. The prepared MCs were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Photoluminescence (PL) properties of prepared MCs were measured and possible luminescent processes were given.
{"title":"Solvent-thermal synthesis and photoluminescence properties of rare-earth based double perovskite Cs2NaRECl6 (RE = Yb0.9Er0.1, Tb, Eu) microcrystals","authors":"Ruifei Qin, Lina Liu, Chunjuan Tang, Guanglei Guo, Kexin Wang, Jia Liu, Feng Shan","doi":"10.1016/j.jlumin.2025.121722","DOIUrl":"10.1016/j.jlumin.2025.121722","url":null,"abstract":"<div><div>In this paper, Cs<sub>2</sub>NaRECl<sub>6</sub> (RE = Yb<sub>0.9</sub>Er<sub>0.1</sub>, Tb, Eu) microncrystals (MCs) were synthesized via a facile solvent-thermal method with the ethanol-water mixture (95.6∶4.4, m/m) as solvent. The prepared MCs were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Photoluminescence (PL) properties of prepared MCs were measured and possible luminescent processes were given.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121722"},"PeriodicalIF":3.6,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-23DOI: 10.1016/j.jlumin.2025.121726
Yifei Duan , Jianshi Wang , Fei Ren , Mengzhi Yan , Chengqi Yao , Bing Dong , Shaojia Huang , Wei Zhao , Tiantian Chen , Yukun Zhao , Fu Wang , Zongwei Xu
As a van der Waals quantum material with a wide bandgap and high stability, hexagonal boron nitride (hBN) demonstrates broad application prospects in quantum sensing and single-photon sources. Among its defects, the boron vacancy defect ( color centers have attracted significant attention due to their applications in quantum sensing and stability in few-layer hBN. Although conventional thermal neutron irradiation can introduce/induce color centers, its spatial resolution is limited. This makes it difficult to achieve localized control of their concentration or to optimize the defect environment in specific micro-scale regions, hindering their precise integration into devices. Here we demonstrate a synergistic strategy combining femtosecond (fs) laser and thermal neutron irradiation to achieve site-specific modification of pre-irradiated hBN samples. This approach results in a significant enhancement (20–30 %) in photoluminescence (PL) intensity and improves high-temperature stability. Through atomic force microscopy (AFM), PL spectroscopy, optically detected magnetic resonance (ODMR), and molecular dynamics simulations, the mechanism of laser-induced defect enrichment is systematically elucidated. Gradient thermal annealing experiments further confirm that fs-laser irradiation significantly enhances the thermal stability of color centers. This work provides new insights and experimental foundations for the design and fabrication of high-temperature quantum devices based on hBN.
{"title":"Femtosecond laser-mediated defect engineering in neutron-irradiated hBN: Molecular dynamics and temperature-dependent annealing investigation","authors":"Yifei Duan , Jianshi Wang , Fei Ren , Mengzhi Yan , Chengqi Yao , Bing Dong , Shaojia Huang , Wei Zhao , Tiantian Chen , Yukun Zhao , Fu Wang , Zongwei Xu","doi":"10.1016/j.jlumin.2025.121726","DOIUrl":"10.1016/j.jlumin.2025.121726","url":null,"abstract":"<div><div>As a van der Waals quantum material with a wide bandgap and high stability, hexagonal boron nitride (hBN) demonstrates broad application prospects in quantum sensing and single-photon sources. Among its defects, the boron vacancy defect (<span><math><mrow><msubsup><mi>V</mi><mi>B</mi><mo>−</mo></msubsup><mo>)</mo></mrow></math></span> color centers have attracted significant attention due to their applications in quantum sensing and stability in few-layer hBN. Although conventional thermal neutron irradiation can introduce/induce <span><math><mrow><msubsup><mi>V</mi><mi>B</mi><mo>−</mo></msubsup></mrow></math></span> color centers, its spatial resolution is limited. This makes it difficult to achieve localized control of their concentration or to optimize the defect environment in specific micro-scale regions, hindering their precise integration into devices. Here we demonstrate a synergistic strategy combining femtosecond (fs) laser and thermal neutron irradiation to achieve site-specific modification of pre-irradiated hBN samples. This approach results in a significant enhancement (20–30 %) in <span><math><mrow><msubsup><mi>V</mi><mi>B</mi><mo>−</mo></msubsup></mrow></math></span> photoluminescence (PL) intensity and improves high-temperature stability. Through atomic force microscopy (AFM), PL spectroscopy, optically detected magnetic resonance (ODMR), and molecular dynamics simulations, the mechanism of laser-induced defect enrichment is systematically elucidated. Gradient thermal annealing experiments further confirm that fs-laser irradiation significantly enhances the thermal stability of <span><math><mrow><msubsup><mi>V</mi><mi>B</mi><mo>−</mo></msubsup></mrow></math></span> color centers. This work provides new insights and experimental foundations for the design and fabrication of high-temperature quantum devices based on hBN.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121726"},"PeriodicalIF":3.6,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.jlumin.2025.121720
Priya V. Tumram
Hitherto unexplored, new phosphors with Bi2Mo2O9 as a host and Nd3+/Yb3+ as activators are reported. Strong near infrared (NIR) emission in the region of about 1000 nm is obtained from the f-f transitions. These NIR emissions are host sensitized. Apart from the near ultraviolet (nUV) excitation, Nd3+ emission can be excited by wavelengths in the visible and NIR region. The sharp lines in the excitation spectra which are distributed over a broad spectral region can be assigned to f-f transitions. It is suggested that these phosphors with NIR emission and nUV-visible excitation can be used for enhancing performance of solar photovoltaic devices, solar pumped lasers, etc.
{"title":"Bi2Mo2O9:Nd3+/Yb3+, new efficient phosphors with NIR emission","authors":"Priya V. Tumram","doi":"10.1016/j.jlumin.2025.121720","DOIUrl":"10.1016/j.jlumin.2025.121720","url":null,"abstract":"<div><div>Hitherto unexplored, new phosphors with Bi<sub>2</sub>Mo<sub>2</sub>O<sub>9</sub> as a host and Nd<sup>3+</sup>/Yb<sup>3+</sup> as activators are reported. Strong near infrared (NIR) emission in the region of about 1000 nm is obtained from the f-f transitions. These NIR emissions are host sensitized. Apart from the near ultraviolet (nUV) excitation, Nd<sup>3+</sup> emission can be excited by wavelengths in the visible and NIR region. The sharp lines in the excitation spectra which are distributed over a broad spectral region can be assigned to f-f transitions. It is suggested that these phosphors with NIR emission and nUV-visible excitation can be used for enhancing performance of solar photovoltaic devices, solar pumped lasers, etc.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121720"},"PeriodicalIF":3.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
GaN-based micro-light-emitting-diode (Micro-LED) arrays on Silicon (Si) platform with 4-μm-diameter ultra-small pixels is realized using a novel wafer-scale hybrid integration strategy by which the pixel-to-pixel electrical isolation is obtained by specialized ion treatment process, and the opto-electrical characteristics of the ion-treated Micro-LED arrays fabricated by different conditions are investigated to clarify the luminescence mechanisms. The results confirmed that a better balance between the electrical isolation and luminescence efficiency can be achieved via optimizing the fabrication conditions related to the ion treatment pixelation. Extensive analysis based on a room-temperature reference-point method (RTRM) further reveals that the dislocation decorating mechanism in InGaN/GaN multiple quantum wells is weakened by higher temperature annealing, which increases the nonradiative recombination and reduces internal quantum efficiency (ηIQE) markedly. The successful hybrid integration of the ion-treated Micro-LED arrays with a Si platform exhibits a great potential for cost-effective mass production of the high performance active-matrix microdisplay applications.
{"title":"Wafer-scale hybrid integration of Micro-LED arrays with ultra-small pixels on Si platform","authors":"Feng Xu , XiangDong Meng , YuXiong Xue , ZiLi Xie , GuoHao Yu , BaoShun Zhang","doi":"10.1016/j.jlumin.2025.121717","DOIUrl":"10.1016/j.jlumin.2025.121717","url":null,"abstract":"<div><div>GaN-based micro-light-emitting-diode (Micro-LED) arrays on Silicon (Si) platform with 4-μm-diameter ultra-small pixels is realized using a novel wafer-scale hybrid integration strategy by which the pixel-to-pixel electrical isolation is obtained by specialized ion treatment process, and the opto-electrical characteristics of the ion-treated Micro-LED arrays fabricated by different conditions are investigated to clarify the luminescence mechanisms. The results confirmed that a better balance between the electrical isolation and luminescence efficiency can be achieved via optimizing the fabrication conditions related to the ion treatment pixelation. Extensive analysis based on a room-temperature reference-point method (RTRM) further reveals that the dislocation decorating mechanism in InGaN/GaN multiple quantum wells is weakened by higher temperature annealing, which increases the nonradiative recombination and reduces internal quantum efficiency (<em>η</em><sub>IQE</sub>) markedly. The successful hybrid integration of the ion-treated Micro-LED arrays with a Si platform exhibits a great potential for cost-effective mass production of the high performance active-matrix microdisplay applications.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"292 ","pages":"Article 121717"},"PeriodicalIF":3.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145877055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.jlumin.2025.121721
Biao Han , Yanan Xu , Chaomin Zhang , Guishun Li , Xingyu Liu , Yongji Wei
The development of mid-infrared (MIR) laser materials with broadband emission and high thermal stability remains challenging, as existing systems often rely on complex co-doping strategies such as Er3+/Yb3+ or suffer from limited emission bandwidth. In this work, we propose a novel Er3+-singly doped tellurite glass (70TeO2-10ZnO-5Nb2O5-5Bi2O3-10Ga2O3-xEr2O3) fabricated via high-temperature melting and quenching. The differential scanning calorimetry curve ΔT (123 °C)>120 °C suggests that the glass sample possesses an outstanding anti-crystallization properties, attributed to the synergistic effects of high-polarization oxides (Nb2O5, Bi2O3) and intermediate Ga2O3. Under 980 nm LD excitation, the glass exhibits dual-band fluorescence: a 1.5 μm near-infrared (NIR) emission (1400–1700 nm) from the Er3+: 4I13/2 → 4I15/2 transition, and a MIR emission at 2.7 μm (2550–2950 nm) with a full width at half maximum (FWHM) of 183 nm, surpassing previous Er3+-singly doped glasses. The broad spectral originates from enhanced structural disorder induced by Nb5+/Bi3+-modified TeO2 networks, which create diverse Er3+ coordination environments. Energy transfer analysis confirms suppressed ion clustering due to the tailored glass matrix, enabling efficient radiative transitions. Our work demonstrates that single-doped Er3+ tellurite glasses offer a simple and effective route for MIR broadband gain media, particularly for fiber lasers and sensing applications.
{"title":"Broadband mid-infrared fluorescence emission at 2.7 μm in Er3+-doped tellurite glasses","authors":"Biao Han , Yanan Xu , Chaomin Zhang , Guishun Li , Xingyu Liu , Yongji Wei","doi":"10.1016/j.jlumin.2025.121721","DOIUrl":"10.1016/j.jlumin.2025.121721","url":null,"abstract":"<div><div>The development of mid-infrared (MIR) laser materials with broadband emission and high thermal stability remains challenging, as existing systems often rely on complex co-doping strategies such as Er<sup>3+</sup>/Yb<sup>3+</sup> or suffer from limited emission bandwidth. In this work, we propose a novel Er<sup>3+</sup>-singly doped tellurite glass (70TeO<sub>2</sub>-10ZnO-5Nb<sub>2</sub>O<sub>5</sub>-5Bi<sub>2</sub>O<sub>3</sub>-10Ga<sub>2</sub>O<sub>3</sub>-xEr<sub>2</sub>O<sub>3</sub>) fabricated via high-temperature melting and quenching. The differential scanning calorimetry curve ΔT (123 °C)>120 °C suggests that the glass sample possesses an outstanding anti-crystallization properties, attributed to the synergistic effects of high-polarization oxides (Nb<sub>2</sub>O<sub>5</sub>, Bi<sub>2</sub>O<sub>3</sub>) and intermediate Ga<sub>2</sub>O<sub>3</sub>. Under 980 nm LD excitation, the glass exhibits dual-band fluorescence: a 1.5 μm near-infrared (NIR) emission (1400–1700 nm) from the Er<sup>3+</sup>: <sup>4</sup>I<sub>13/2</sub> → <sup>4</sup>I<sub>15/2</sub> transition, and a MIR emission at 2.7 μm (2550–2950 nm) with a full width at half maximum (FWHM) of 183 nm, surpassing previous Er<sup>3+</sup>-singly doped glasses. The broad spectral originates from enhanced structural disorder induced by Nb<sup>5+</sup>/Bi<sup>3+</sup>-modified TeO<sub>2</sub> networks, which create diverse Er<sup>3+</sup> coordination environments. Energy transfer analysis confirms suppressed ion clustering due to the tailored glass matrix, enabling efficient radiative transitions. Our work demonstrates that single-doped Er<sup>3+</sup> tellurite glasses offer a simple and effective route for MIR broadband gain media, particularly for fiber lasers and sensing applications.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121721"},"PeriodicalIF":3.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Conventional lead-halide perovskites face persistent challenges of toxicity and instability, severely limiting their applications in commercial X-ray detection and solid-state lighting. This study introduces a novel lead-free, zero-dimensional organic-inorganic manganese(II) chloride, (C9H13N2)2MnCl4 (C9H13N2= PYP). which features strong luminescence, good stability, and high environmental compatibility. This material exhibits a bright yellow emission at 562 nm (full width at half maximum of 87 nm), a high photoluminescence quantum yield of 82.6 % and a long decay lifetime of 2.7 ms. This crystal shows excellent thermal stability, remaining undecomposed up to 240 °C. Moreover, it maintains its structural phase and luminescence intensity after one month of exposure to air. When integrated into a 450 nm InGaN chip, the material enables a stable white-light LED with CIE coordinates of (0.3344, 0.3328), a correlated color temperature of ≈5450 K, a color rendering index (Ra) of 67.6, and a luminous efficacy of 56.37 lm W−1. Moreover, (PYP)2MnCl4 functions as a high-gain X-ray scintillator, delivering a light yield of 82,830 photons MeV−1 and showing a linear response across a wide dose-rate range (100–1200 μGy s−1), with a low detection limit of 5.8 μGy s−1. Flexible and transparent composite films fabricated from this material maintain full emission under repeated bending and achieve a spatial resolution of 10 lp mm−1 in X-ray imaging. These results collectively establish (PYP)2MnCl4 as a highly promising candidate for next-generation solid-state lighting and high-resolution X-ray imaging technologies.
{"title":"Zero-dimensional organic-inorganic metal chloride (C9H13N2)2MnCl4 with highly efficient yellow emission for white light-emitting diode and flexible X-ray imaging","authors":"Xiaoping Zhou , Jiangcong Zhou , Lijuan Xiao , Zhiwei Tang , Changlin Cai , Ting Zhong , Daying Yu , Yunfang Zhao , Rui Zhang","doi":"10.1016/j.jlumin.2025.121718","DOIUrl":"10.1016/j.jlumin.2025.121718","url":null,"abstract":"<div><div>Conventional lead-halide perovskites face persistent challenges of toxicity and instability, severely limiting their applications in commercial X-ray detection and solid-state lighting. This study introduces a novel lead-free, zero-dimensional organic-inorganic manganese(II) chloride, (C<sub>9</sub>H<sub>13</sub>N<sub>2</sub>)<sub>2</sub>MnCl<sub>4</sub> (C<sub>9</sub>H<sub>13</sub>N<sub>2</sub>= PYP). which features strong luminescence, good stability, and high environmental compatibility. This material exhibits a bright yellow emission at 562 nm (full width at half maximum of 87 nm), a high photoluminescence quantum yield of 82.6 % and a long decay lifetime of 2.7 ms. This crystal shows excellent thermal stability, remaining undecomposed up to 240 °C. Moreover, it maintains its structural phase and luminescence intensity after one month of exposure to air. When integrated into a 450 nm InGaN chip, the material enables a stable white-light LED with CIE coordinates of (0.3344, 0.3328), a correlated color temperature of ≈5450 K, a color rendering index (Ra) of 67.6, and a luminous efficacy of 56.37 lm W<sup>−1</sup>. Moreover, (PYP)<sub>2</sub>MnCl<sub>4</sub> functions as a high-gain X-ray scintillator, delivering a light yield of 82,830 photons MeV<sup>−1</sup> and showing a linear response across a wide dose-rate range (100–1200 μGy s<sup>−1</sup>), with a low detection limit of 5.8 μGy s<sup>−1</sup>. Flexible and transparent composite films fabricated from this material maintain full emission under repeated bending and achieve a spatial resolution of 10 lp mm<sup>−1</sup> in X-ray imaging. These results collectively establish (PYP)<sub>2</sub>MnCl<sub>4</sub> as a highly promising candidate for next-generation solid-state lighting and high-resolution X-ray imaging technologies.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121718"},"PeriodicalIF":3.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.jlumin.2025.121723
Changde Luo , Zian Dong , Xiangshou Zeng , Zhangfeng Tao , Ni Ma , Jun Li , Jason Hoo , Bingdong Pan , Shiping Guo , Guojian Ding , Yang Wang , Xiaohui Wang , Haiqiang Jia , Qiao Wang , Rong Yang , Yangfeng Li
The aluminum gallium nitride (AlGaN) ultra-violet light-emitting diodes (UV LEDs) emitting at the UVC range render environmentally-friendly efficient sterilization, disinfection, and water purification. However, the high activation energy of magnesium (Mg) in p-AlGaN hinders the improvement of UVC LEDs. In this study, we demonstrate a Mg-delta doping in p-AlGaN to reduce the reverse leakage current and augment the light-output power of UVC LEDs. The UVC LEDs incorporating this design exhibit a significant reduction in reverse leakage current by 71 % and a notable enhancement in light output power (LOP) compared to conventional devices. The Mg-intercalated GaN superlattices structure has been observed by scanning transmission electron microscopy (STEM), which will both increase the hole concentration and mobility in AlGaN, thus leading to an outperforming performance of UVC LEDs.
{"title":"Mg-intercalated GaN superlattices enhancing the performance of AlGaN UVC LEDs","authors":"Changde Luo , Zian Dong , Xiangshou Zeng , Zhangfeng Tao , Ni Ma , Jun Li , Jason Hoo , Bingdong Pan , Shiping Guo , Guojian Ding , Yang Wang , Xiaohui Wang , Haiqiang Jia , Qiao Wang , Rong Yang , Yangfeng Li","doi":"10.1016/j.jlumin.2025.121723","DOIUrl":"10.1016/j.jlumin.2025.121723","url":null,"abstract":"<div><div>The aluminum gallium nitride (AlGaN) ultra-violet light-emitting diodes (UV LEDs) emitting at the UVC range render environmentally-friendly efficient sterilization, disinfection, and water purification. However, the high activation energy of magnesium (Mg) in p-AlGaN hinders the improvement of UVC LEDs. In this study, we demonstrate a Mg-delta doping in p-AlGaN to reduce the reverse leakage current and augment the light-output power of UVC LEDs. The UVC LEDs incorporating this design exhibit a significant reduction in reverse leakage current by 71 % and a notable enhancement in light output power (LOP) compared to conventional devices. The Mg-intercalated GaN superlattices structure has been observed by scanning transmission electron microscopy (STEM), which will both increase the hole concentration and mobility in AlGaN, thus leading to an outperforming performance of UVC LEDs.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121723"},"PeriodicalIF":3.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.jlumin.2025.121700
Christoph Rick, Thomas Jüstel
The present work concerns the efficient blue-to-UV-B up-conversion in the host material Li2CaSiO4 by co-doping with Pr3+ and Gd3+. The focus is on excitation with a 488 nm laser diode, which initiates a multi-stage energy transfer process resulting in intense emission in the UV-B range at 311 nm. The maximum emission intensity was observed at a Gd3+ doping level of 10 mol%. The spectral analyses demonstrate an efficient, non-radiative energy transfer from the Pr3+ to the Gd3+ ion as the central mechanism of this process. The up-conversion emission achieved is primarily based on a two-photon process, which is triggered particularly effectively by the high-power density of the laser light. These results emphasise the potential of the investigated materials for applications in photomedical therapy and UV-based disinfection, where compact laser systems can be used.
{"title":"Efficient blue-to-UV-B up-conversion in Li2CaSiO4:Pr,Gd,Na","authors":"Christoph Rick, Thomas Jüstel","doi":"10.1016/j.jlumin.2025.121700","DOIUrl":"10.1016/j.jlumin.2025.121700","url":null,"abstract":"<div><div>The present work concerns the efficient blue-to-UV-B up-conversion in the host material Li<sub>2</sub>CaSiO<sub>4</sub> by co-doping with Pr<sup>3+</sup> and Gd<sup>3+</sup>. The focus is on excitation with a 488 nm laser diode, which initiates a multi-stage energy transfer process resulting in intense emission in the UV-B range at 311 nm. The maximum emission intensity was observed at a Gd<sup>3+</sup> doping level of 10 mol%. The spectral analyses demonstrate an efficient, non-radiative energy transfer from the Pr<sup>3+</sup> to the Gd<sup>3+</sup> ion as the central mechanism of this process. The up-conversion emission achieved is primarily based on a two-photon process, which is triggered particularly effectively by the high-power density of the laser light. These results emphasise the potential of the investigated materials for applications in photomedical therapy and UV-based disinfection, where compact laser systems can be used.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121700"},"PeriodicalIF":3.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Broadband yellow-green-emitting materials help to improve the color rendition performance of phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we report a Bi3+-activated double perovskite (La2MgHfO6) broadband yellow-green-emitting phosphor synthesized via high-temperature solid-state reaction. Structural characterization confirms phase-pure crystallization in the P21/n space group, while spectral analysis reveals a broad yellow-green emission (λem = 544 nm, FWHM = 137 nm) under 370 nm excitation, attributed to the parity-allowed 3P1→1S0 transition of Bi3+ in [LaO8] dodecahedron and [Mg/HfO6] octahedra. The material effectively suppresses concentration quenching owing to the relatively large interionic distances within its crystal structure. Meanwhile, its emission peak exhibits a red-shifting (Δλ = 30 nm) with varying excitation wavelengths, which stems from the distinct responses of different luminescent centers to excitation energy. Additionally, it demonstrates good thermal stability, with minimal temperature-induced changes in peak position and full width at half maximum (FWHM). When combined with commercial red (CaAlSiN3:Eu2+) and blue (BAM:Eu2+) phosphors, the fabricated WLED exhibits bright white light with superior color rendering (Ra = 86.9) and comfortable correlated color temperature (CCT = 4994 K). The yellow-green emission significantly enhances spectral continuity, demonstrating great potential as a rare-earth-free component for high-quality full-spectrum lighting systems.
{"title":"Broadband yellow-green emitting Bi3+-doped La2MgHfO6 double perovskite phosphor for WLED","authors":"Xinyi Zhang, Wenqi Xia, Zehua Xue, Wanyu Zhao, Xiyuan Zhang, Zuobin Tang","doi":"10.1016/j.jlumin.2025.121719","DOIUrl":"10.1016/j.jlumin.2025.121719","url":null,"abstract":"<div><div>Broadband yellow-green-emitting materials help to improve the color rendition performance of phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we report a Bi<sup>3+</sup>-activated double perovskite (La<sub>2</sub>MgHfO<sub>6</sub>) broadband yellow-green-emitting phosphor synthesized via high-temperature solid-state reaction. Structural characterization confirms phase-pure crystallization in the P21/n space group, while spectral analysis reveals a broad yellow-green emission (λ<sub>em</sub> = 544 nm, FWHM = 137 nm) under 370 nm excitation, attributed to the parity-allowed <sup>3</sup>P<sub>1</sub>→<sup>1</sup>S<sub>0</sub> transition of Bi<sup>3+</sup> in [LaO<sub>8</sub>] dodecahedron and [Mg/HfO<sub>6</sub>] octahedra. The material effectively suppresses concentration quenching owing to the relatively large interionic distances within its crystal structure. Meanwhile, its emission peak exhibits a red-shifting (Δλ = 30 nm) with varying excitation wavelengths, which stems from the distinct responses of different luminescent centers to excitation energy. Additionally, it demonstrates good thermal stability, with minimal temperature-induced changes in peak position and full width at half maximum (FWHM). When combined with commercial red (CaAlSiN<sub>3</sub>:Eu<sup>2+</sup>) and blue (BAM:Eu<sup>2+</sup>) phosphors, the fabricated WLED exhibits bright white light with superior color rendering (Ra = 86.9) and comfortable correlated color temperature (CCT = 4994 K). The yellow-green emission significantly enhances spectral continuity, demonstrating great potential as a rare-earth-free component for high-quality full-spectrum lighting systems.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121719"},"PeriodicalIF":3.6,"publicationDate":"2025-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1016/j.jlumin.2025.121705
Guangkuan Zhu , Fengxian Liang , He Zhao , Shu Han , Qiping Feng , Yuehui Liu , Mengmeng Zhang , Xueming Li
Organic room temperature phosphorescent (RTP) materials have attracted extensive attention in the fields of anti-counterfeiting, optical display and biological imaging due to their unique optical properties. The benzimidazole group can effectively enhance the intersystem crossing efficiency and become the key framework for the development of efficient organic room temperature phosphorescent materials. In this study, a doping system with N-methyl-4-bromobenzamide (BMB) as the host and a polysubstituted benzimidazole derivative (PBM-R) as the guest was constructed, which had a phosphorescence lifetime of up to 433 ms and a phosphorescence quantum yield of up to 48 %. Importantly, the BMB host acts as an energy-transfer mediator, enabling the efficient generation of triplet excitons in the guest molecules through host-to-guest triplet-triplet energy transfer (TTET). Notably, significant phosphorescence emission was retained even at low guest-doping concentrations, with host-to-guest mass ratios up to 10,000:1. These materials have been successfully applied to the information storage and encryption system, which provides a new idea for the development of efficient RTP materials.
{"title":"Imidazole-based organic room-temperature phosphorescent materials with efficient emission at trace doping for information encryption","authors":"Guangkuan Zhu , Fengxian Liang , He Zhao , Shu Han , Qiping Feng , Yuehui Liu , Mengmeng Zhang , Xueming Li","doi":"10.1016/j.jlumin.2025.121705","DOIUrl":"10.1016/j.jlumin.2025.121705","url":null,"abstract":"<div><div>Organic room temperature phosphorescent (RTP) materials have attracted extensive attention in the fields of anti-counterfeiting, optical display and biological imaging due to their unique optical properties. The benzimidazole group can effectively enhance the intersystem crossing efficiency and become the key framework for the development of efficient organic room temperature phosphorescent materials. In this study, a doping system with N-methyl-4-bromobenzamide (<strong>BMB</strong>) as the host and a polysubstituted benzimidazole derivative (<strong>PBM-R</strong>) as the guest was constructed, which had a phosphorescence lifetime of up to 433 ms and a phosphorescence quantum yield of up to 48 %. Importantly, the <strong>BMB</strong> host acts as an energy-transfer mediator, enabling the efficient generation of triplet excitons in the guest molecules through host-to-guest triplet-triplet energy transfer (TTET). Notably, significant phosphorescence emission was retained even at low guest-doping concentrations, with host-to-guest mass ratios up to 10,000:1. These materials have been successfully applied to the information storage and encryption system, which provides a new idea for the development of efficient RTP materials.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"291 ","pages":"Article 121705"},"PeriodicalIF":3.6,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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