Pub Date : 2026-05-01Epub Date: 2026-02-02DOI: 10.1016/j.jlumin.2026.121780
Xulin Lu , Aijun Song , Xian-Fu Zhang
The parent compound and esterified derivative of dibenzofluorescein (DBFL) have been prepared to examine the photophysical properties. The steady-state absorption spectra, fluorescence spectra, fluorescence lifetimes, and nanosecond transient absorption spectra have been measured and compared with those of DBFL. The parent compound emits bright red fluorescence efficiently with a near 2-fold higher quantum yield and significantly longer fluorescence lifetime than that of DBFL. The DBFL esterified derivative, on the other hand, shows lower emission quantum yield and shorter lifetime. Laser flash photolysis and singlet oxygen detection studies reveal that no excited triplet state is formed upon photo-excitation. Quantum chemical calculation results reveal the photophysical mechanism that leads to changes in the fluorescence properties of DBFL parent and its derived compounds.
{"title":"Dibenzofluorescein's parent compound and derivatives: A π-extended fluorescein with intense red fluorescence","authors":"Xulin Lu , Aijun Song , Xian-Fu Zhang","doi":"10.1016/j.jlumin.2026.121780","DOIUrl":"10.1016/j.jlumin.2026.121780","url":null,"abstract":"<div><div>The parent compound and esterified derivative of dibenzofluorescein (DBFL) have been prepared to examine the photophysical properties. The steady-state absorption spectra, fluorescence spectra, fluorescence lifetimes, and nanosecond transient absorption spectra have been measured and compared with those of DBFL. The parent compound emits bright red fluorescence efficiently with a near 2-fold higher quantum yield and significantly longer fluorescence lifetime than that of DBFL. The DBFL esterified derivative, on the other hand, shows lower emission quantum yield and shorter lifetime. Laser flash photolysis and singlet oxygen detection studies reveal that no excited triplet state is formed upon photo-excitation. Quantum chemical calculation results reveal the photophysical mechanism that leads to changes in the fluorescence properties of DBFL parent and its derived compounds.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121780"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-02-06DOI: 10.1016/j.jlumin.2026.121796
Liqian Niu, Xian Wang, Xinxin Liu, Xin Liu, Shiyue Niu, Bin Yang, Jia Liu, Shuyun Bi
A highly sensitive surface-enhanced Raman spectroscopy (SERS) method for the detection of acephate was established by using the substrate of silver nanoparticles (AgNPs) modified with N-acetyl-L-cysteine (NAC) and zinc oxide (ZnO). The Raman signal enhancement factor (EF) of acephate by the substrate of ZnO/NAC/AgNPs can be reached 4.95 × 106. The ultraviolet-visible spectroscopy (UV-vis), high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), zeta potential, Fourier transform infrared spectra (FT-IR) and thermogravimetric analysis (TGA) were used to characterize the substrate of ZnO/NAC/AgNPs. The mechanism of electromagnetic enhancement (EM) assisted by chemical enhancement (CM) was elucidated in detail. The optimal experimental conditions were selected. The interference experiments showed that this method had high selectivity in complex substrates. There was a good linear relationship between acephate concentration and SERS signal intensity in the range of 6.00 × 10−9 mol L−1 – 8.00 × 10−7 mol L−1, and the linear equation was ISERS= 85.02 c + 24712.49 (r = 0.9982, c: nmol L−1) with the limit of detection (LOD) was 3.40 nmol L−1 (3σ/S). The SERS method was successfully applied for the detection of acephate residues in vegetable samples, and the recovery was in the range of 95.3% – 104% (n = 5).
{"title":"Construction of the SERS substrate of AgNPs modified with N-acetyl-L-cysteine and ZnO for sensitive detection of acephate","authors":"Liqian Niu, Xian Wang, Xinxin Liu, Xin Liu, Shiyue Niu, Bin Yang, Jia Liu, Shuyun Bi","doi":"10.1016/j.jlumin.2026.121796","DOIUrl":"10.1016/j.jlumin.2026.121796","url":null,"abstract":"<div><div>A highly sensitive surface-enhanced Raman spectroscopy (SERS) method for the detection of acephate was established by using the substrate of silver nanoparticles (AgNPs) modified with N-acetyl-L-cysteine (NAC) and zinc oxide (ZnO). The Raman signal enhancement factor (EF) of acephate by the substrate of ZnO/NAC/AgNPs can be reached 4.95 × 10<sup>6</sup>. The ultraviolet-visible spectroscopy (UV-vis), high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), zeta potential, Fourier transform infrared spectra (FT-IR) and thermogravimetric analysis (TGA) were used to characterize the substrate of ZnO/NAC/AgNPs. The mechanism of electromagnetic enhancement (EM) assisted by chemical enhancement (CM) was elucidated in detail. The optimal experimental conditions were selected. The interference experiments showed that this method had high selectivity in complex substrates. There was a good linear relationship between acephate concentration and SERS signal intensity in the range of 6.00 × 10<sup>−9</sup> mol L<sup>−1</sup> – 8.00 × 10<sup>−7</sup> mol L<sup>−1</sup>, and the linear equation was <em>I</em><sub>SERS</sub> <em>=</em> 85.02 <em>c +</em> 24712.49 (<em>r</em> = 0.9982, <em>c</em>: nmol L<sup>−1</sup>) with the limit of detection (LOD) was 3.40 nmol L<sup>−1</sup> (3<em>σ</em>/<em>S</em>). The SERS method was successfully applied for the detection of acephate residues in vegetable samples, and the recovery was in the range of 95.3% – 104% (<em>n</em> = 5).</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121796"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A series of BaZr(PO4)2 (BZP) phosphors activated singly with Bi3+ and codoped with Bi3+/Tb3+ has been synthesized by utilizing solid state reaction synthesis. The crystal phase, morphological studies and photoluminescennt characteristics of the prepared samples were analyzed utilizing X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Photoluminescent (PL) spectroscopy and decay curves. The XRD analysis confirmed the successful incorporation of dopant ions inside host matrix. The PL studies of singly Bi3+ activated phosphors demonstarted blue emission band around 468 nm when 313 nm wavelength source of excitation is used. The transfer of energy to Tb3+ from Bi3+ in the codoped samples was confirmed from the PL spectra and the decay kinetics. The pathway responsible for transfer of energy from Bi3+ to Tb3+ was identified as dipole-dipole interactions and critical distance between Bi3+ and Tb3+ was found to be 21.85 Å. The CIE chromaticity coordinates for single doped BaZr(PO4)2:0.03 Bi3+ was obtained to be (0.157, 0.213). The temperature dependent PL studies revealed good thermal stability of phosphor with thermal activation energy (Ea) of 0.329 eV. The color tunable emissios from blue to green region were realised in codoped phosphors by varying relative doping concentrations and excitation wavelengths, which illustrates potential use of BaZr(PO4)2: Bi3+, Bi3+/Tb3+ phosphors with tunable blue green emission in field of solid-state lighting.
{"title":"Photoluminescent properties of Bi3+ doped BaZr(PO4)2 and energy transfer in Bi3+, Tb3+ codoped phosphors","authors":"Shweta Yadav , Sumandeep Kaur , A.S. Rao , Deshraj Meena","doi":"10.1016/j.jlumin.2026.121793","DOIUrl":"10.1016/j.jlumin.2026.121793","url":null,"abstract":"<div><div>A series of BaZr(PO<sub>4</sub>)<sub>2</sub> (BZP) phosphors activated singly with Bi<sup>3+</sup> and codoped with Bi<sup>3+</sup>/Tb<sup>3+</sup> has been synthesized by utilizing solid state reaction synthesis. The crystal phase, morphological studies and photoluminescennt characteristics of the prepared samples were analyzed utilizing X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Photoluminescent (PL) spectroscopy and decay curves. The XRD analysis confirmed the successful incorporation of dopant ions inside host matrix. The PL studies of singly Bi<sup>3+</sup> activated phosphors demonstarted blue emission band around 468 nm when 313 nm wavelength source of excitation is used. The transfer of energy to Tb<sup>3+</sup> from Bi<sup>3+</sup> in the codoped samples was confirmed from the PL spectra and the decay kinetics. The pathway responsible for transfer of energy from Bi<sup>3+</sup> to Tb<sup>3+</sup> was identified as dipole-dipole interactions and critical distance between Bi<sup>3+</sup> and Tb<sup>3+</sup> was found to be 21.85 Å. The CIE chromaticity coordinates for single doped BaZr(PO<sub>4</sub>)<sub>2</sub>:0.03 Bi<sup>3+</sup> was obtained to be (0.157, 0.213). The temperature dependent PL studies revealed good thermal stability of phosphor with thermal activation energy (E<sub>a</sub>) of 0.329 eV. The color tunable emissios from blue to green region were realised in codoped phosphors by varying relative doping concentrations and excitation wavelengths, which illustrates potential use of BaZr(PO<sub>4</sub>)<sub>2</sub>: Bi<sup>3+</sup>, Bi<sup>3+</sup>/Tb<sup>3+</sup> phosphors with tunable blue green emission in field of solid-state lighting.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121793"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-02-11DOI: 10.1016/j.jlumin.2026.121804
Omer Hilal , H. Gulce Emur , Anil Dogan , Elif Akhuseyin Yildiz , Mehmet Isik , Mehmet Parlak , Ozge Surucu , Ayhan Elmali , Ahmet Karatay
In this study, the nonlinear absorption (NA) and optical limiting (OL) properties of indium sulfide (In2S3) thin films prepared by physical vapor deposition (PVD) and radio-frequency (RF) magnetron sputtering were investigated. Linear optical analysis revealed distinct Urbach energies of 1.14 eV and 0.27 eV for the PVD-grown and RF-sputtered films, respectively, indicating higher defect density in the former. Photoluminescence (PL) measurements showed broader and stronger visible emission for the RF-sputtered film, while the PVD-grown film exhibited narrower near-band-edge emission. Femtosecond transient absorption spectroscopy further revealed that the PVD-grown film featured broad excited-state absorption and faster decay dynamics, whereas the RF-sputtered film displayed ground-state bleaching and longer lifetimes, consistent with fewer traps and reduced carrier loss. Open-aperture Z-scan analysis under 532 nm, 4 ns excitation indicated intensity-dependent NA dominated by defect-assisted processes. The effective nonlinear coefficients from the defect-saturation model were over an order of magnitude higher than those from the Sheik–Bahae model. The RF-sputtered film exhibited shallower defect states that enhanced sequential two-photon and free-carrier absorption, while the PVD-grown film showed early saturation due to localized-state filling. Optical limiting thresholds of 2.63 mJ/cm2 (RF) and 7.15 mJ/cm2 (PVD) confirm the superior limiting performance of the RF-sputtered In2S3 film for visible-range nonlinear photonic applications.
{"title":"Nonlinear optical and optical limiting properties of In2S3 chalcogenide thin films: Influence of defect states and deposition technique","authors":"Omer Hilal , H. Gulce Emur , Anil Dogan , Elif Akhuseyin Yildiz , Mehmet Isik , Mehmet Parlak , Ozge Surucu , Ayhan Elmali , Ahmet Karatay","doi":"10.1016/j.jlumin.2026.121804","DOIUrl":"10.1016/j.jlumin.2026.121804","url":null,"abstract":"<div><div>In this study, the nonlinear absorption (NA) and optical limiting (OL) properties of indium sulfide (In<sub>2</sub>S<sub>3</sub>) thin films prepared by physical vapor deposition (PVD) and radio-frequency (RF) magnetron sputtering were investigated. Linear optical analysis revealed distinct Urbach energies of 1.14 eV and 0.27 eV for the PVD-grown and RF-sputtered films, respectively, indicating higher defect density in the former. Photoluminescence (PL) measurements showed broader and stronger visible emission for the RF-sputtered film, while the PVD-grown film exhibited narrower near-band-edge emission. Femtosecond transient absorption spectroscopy further revealed that the PVD-grown film featured broad excited-state absorption and faster decay dynamics, whereas the RF-sputtered film displayed ground-state bleaching and longer lifetimes, consistent with fewer traps and reduced carrier loss. Open-aperture Z-scan analysis under 532 nm, 4 ns excitation indicated intensity-dependent NA dominated by defect-assisted processes. The effective nonlinear coefficients from the defect-saturation model were over an order of magnitude higher than those from the Sheik–Bahae model. The RF-sputtered film exhibited shallower defect states that enhanced sequential two-photon and free-carrier absorption, while the PVD-grown film showed early saturation due to localized-state filling. Optical limiting thresholds of 2.63 mJ/cm<sup>2</sup> (RF) and 7.15 mJ/cm<sup>2</sup> (PVD) confirm the superior limiting performance of the RF-sputtered In<sub>2</sub>S<sub>3</sub> film for visible-range nonlinear photonic applications.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121804"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon dots doped with oxygen- and nitrogen-containing functional groups were synthesized to act as photosensitizers for singlet oxygen generation. Structural studies revealed the presence of O,N-containing functional centers on the surface of carbon dots. The absorption and luminescence properties were investigated in water-ethanol mixtures. The effects of external heavy atoms and temperature on the delayed fluorescence of the carbon dots were examined. It was found that increasing the carbon dot concentration leads to an increase in phosphorescence intensity, while the lifetime of carbon dots decreases. Upon the addition of molecules to a degassed solution of carbon dots, a singlet-triplet annihilation occurs, the efficiency of which is governed by the concentration ratio of triplet state of carbon dots to molecules. The quantum yield of generation is equal to ΦΔ = 0.29.
{"title":"Photosensitization of singlet oxygen by O,N-doped carbon dots","authors":"Niaz Ibrayev , Gulnur Amanzholova , Boris Minaev , Takhmina Khamza","doi":"10.1016/j.jlumin.2026.121781","DOIUrl":"10.1016/j.jlumin.2026.121781","url":null,"abstract":"<div><div>Carbon dots doped with oxygen- and nitrogen-containing functional groups were synthesized to act as photosensitizers for singlet oxygen <span><math><mrow><msub><mi>Ο</mi><mn>2</mn></msub><mrow><mo>(</mo><mmultiscripts><msub><mo>Δ</mo><mi>g</mi></msub><mprescripts></mprescripts><none></none><mn>1</mn></mmultiscripts><mo>)</mo></mrow></mrow></math></span> generation. Structural studies revealed the presence of O,N<strong>-</strong>containing functional centers on the surface of carbon dots. The absorption and luminescence properties were investigated in water-ethanol mixtures. The effects of external heavy atoms and temperature on the delayed fluorescence of the carbon dots were examined. It was found that increasing the carbon dot concentration leads to an increase in <span><math><mrow><msub><mi>Ο</mi><mn>2</mn></msub><mrow><mo>(</mo><mmultiscripts><msub><mo>Δ</mo><mi>g</mi></msub><mprescripts></mprescripts><none></none><mn>1</mn></mmultiscripts><mo>)</mo></mrow></mrow></math></span> phosphorescence intensity, while the lifetime of carbon dots decreases. Upon the addition of <span><math><mrow><msub><mi>Ο</mi><mn>2</mn></msub><mrow><mo>(</mo><mmultiscripts><msubsup><mi>Σ</mi><mi>g</mi><mo>−</mo></msubsup><mprescripts></mprescripts><none></none><mn>3</mn></mmultiscripts><mo>)</mo></mrow></mrow></math></span> molecules to a degassed solution of carbon dots, a singlet-triplet annihilation occurs, the efficiency of which is governed by the concentration ratio of triplet state of carbon dots to <span><math><mrow><msub><mi>Ο</mi><mn>2</mn></msub><mrow><mo>(</mo><mmultiscripts><msub><mo>Δ</mo><mi>g</mi></msub><mprescripts></mprescripts><none></none><mn>1</mn></mmultiscripts><mo>)</mo></mrow></mrow></math></span> molecules. The quantum yield of <span><math><mrow><msub><mi>Ο</mi><mn>2</mn></msub><mrow><mo>(</mo><mmultiscripts><msub><mo>Δ</mo><mi>g</mi></msub><mprescripts></mprescripts><none></none><mn>1</mn></mmultiscripts><mo>)</mo></mrow></mrow></math></span> generation is equal to Φ<sub>Δ</sub> = 0.29.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121781"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-13DOI: 10.1016/j.jlumin.2026.121754
Anuda Bibi, Muhammad Usman, Shazma Ali, Aiman Fatima, Haseena Noor
The optoelectronic performance of an AlGaN ultraviolet-C (UV-C) nanowire LED emitting at 265 nm is numerically analyzed by incorporating a step-graded superlattice last quantum barrier (SGSLLQB). A SGSLLQB is employed in place of a conventional last quantum barrier, which lowers the energy barrier for holes and enhances the electron confining capability of wells, leading to stronger radiative recombination. Consequently, the optical output power was enhanced by 37 % and internal quantum efficiency increased from 53 % for a conventional last quantum barrier to 63 % for the SGSLLQB. These results demonstrate that the SGSLLQB is an effective method to enhance the performance of AlGaN UV-C nanowire LEDs without changing the overall device design. This work highlights the role of barrier engineering in developing high-efficiency UV-C nanowire LEDs for future optoelectronic applications.
采用阶跃渐变超晶格末量子势垒（SGSLLQB）对265 nm发光的AlGaN紫外- c （UV-C）纳米线LED的光电性能进行了数值分析。SGSLLQB取代了传统的末量子势垒，降低了空穴的能量势垒，增强了阱的电子约束能力，从而实现了更强的辐射复合。因此，光输出功率提高了37%，内部量子效率从传统的最后量子势垒的53%提高到SGSLLQB的63%。这些结果表明，SGSLLQB是在不改变整体器件设计的情况下提高AlGaN UV-C纳米线led性能的有效方法。这项工作强调了屏障工程在开发未来光电应用的高效UV-C纳米线led中的作用。
{"title":"Optimized last quantum barrier design for enhanced performance of Ultraviolet-C (UV-C) AlGaN nanowire light-emitting diodes","authors":"Anuda Bibi, Muhammad Usman, Shazma Ali, Aiman Fatima, Haseena Noor","doi":"10.1016/j.jlumin.2026.121754","DOIUrl":"10.1016/j.jlumin.2026.121754","url":null,"abstract":"<div><div>The optoelectronic performance of an AlGaN ultraviolet-C (UV-C) nanowire LED emitting at 265 nm is numerically analyzed by incorporating a step-graded superlattice last quantum barrier (SGSLLQB). A SGSLLQB is employed in place of a conventional last quantum barrier, which lowers the energy barrier for holes and enhances the electron confining capability of wells, leading to stronger radiative recombination. Consequently, the optical output power was enhanced by 37 % and internal quantum efficiency increased from 53 % for a conventional last quantum barrier to 63 % for the SGSLLQB. These results demonstrate that the SGSLLQB is an effective method to enhance the performance of AlGaN UV-C nanowire LEDs without changing the overall device design. This work highlights the role of barrier engineering in developing high-efficiency UV-C nanowire LEDs for future optoelectronic applications.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121754"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-19DOI: 10.1016/j.jlumin.2026.121759
Chuan Sang, Yunze Liu, Ziyi Zhao, Ai Jian, Xu Zhou, Yongjian Zhou, Qi Xiao, Xiumei Yin, Xixian Luo
Lanthanide ions doped upconversion system with dual luminescence centers has attracted much interest in fields of display and temperature sensing. Herein, XNbO4:Yb3+,Er3+ (X = Lu, Gd, Y) are synthesized by solid state method. LuNbO4:Yb3+,Er3+ exhibits optimal upconversion luminescence under the same excitation conditions. Meanwhile, the appropriate combination of dual luminescence centers for Er3+ and Tm3+ can easily achieve color-tunable emission including white emission by adjusting the content of doped ions upon 980 nm excitation. The improving proportion of red emission with increasing Tm3+ is assigned to the effective energy transfer between Er3+ and Tm3+. Furthermore, UC luminescence thermometric performances are systematically investigated. Using non-thermally coupled levels of 4F9/2 (Er3+) and 3F2,3 (Tm3+) based on dual luminescence centers can obtain higher sensitivity performance (maximum absolute and relative sensitivity of 69.1 × 10−3 K−1 and 4.0 % K−1) compared to thermally coupled levels of 2H11/2 and 4S3/2. The above results indicate that LuNbO4:Yb3+,Er3+,Tm3+ is a promising upconversion luminescence material for solid-state displays and optical thermometry.
{"title":"Highly-sensitive optical temperature sensing and color-tunable upconversion emission based on dual luminescence centers of LuNbO4:Yb3+, Er3+, Tm3+","authors":"Chuan Sang, Yunze Liu, Ziyi Zhao, Ai Jian, Xu Zhou, Yongjian Zhou, Qi Xiao, Xiumei Yin, Xixian Luo","doi":"10.1016/j.jlumin.2026.121759","DOIUrl":"10.1016/j.jlumin.2026.121759","url":null,"abstract":"<div><div>Lanthanide ions doped upconversion system with dual luminescence centers has attracted much interest in fields of display and temperature sensing. Herein, XNbO<sub>4</sub>:Yb<sup>3+</sup>,Er<sup>3+</sup> (X = Lu, Gd, Y) are synthesized by solid state method. LuNbO<sub>4</sub>:Yb<sup>3+</sup>,Er<sup>3+</sup> exhibits optimal upconversion luminescence under the same excitation conditions. Meanwhile, the appropriate combination of dual luminescence centers for Er<sup>3+</sup> and Tm<sup>3+</sup> can easily achieve color-tunable emission including white emission by adjusting the content of doped ions upon 980 nm excitation. The improving proportion of red emission with increasing Tm<sup>3+</sup> is assigned to the effective energy transfer between Er<sup>3+</sup> and Tm<sup>3+</sup>. Furthermore, UC luminescence thermometric performances are systematically investigated. Using non-thermally coupled levels of <sup>4</sup>F<sub>9/2</sub> (Er<sup>3+</sup>) and <sup>3</sup>F<sub>2,3</sub> (Tm<sup>3+</sup>) based on dual luminescence centers can obtain higher sensitivity performance (maximum absolute and relative sensitivity of 69.1 × 10<sup>−3</sup> K<sup>−1</sup> and 4.0 % K<sup>−1</sup>) compared to thermally coupled levels of <sup>2</sup>H<sub>11/2</sub> and <sup>4</sup>S<sub>3/2</sub>. The above results indicate that LuNbO<sub>4</sub>:Yb<sup>3+</sup>,Er<sup>3+</sup>,Tm<sup>3+</sup> is a promising upconversion luminescence material for solid-state displays and optical thermometry.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121759"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
One-dimensional (1D) CsPbBr3 nanorods stand out due to their high crystallinity and aspect ratio. However, the charge separation process in CsPbBr3 nanorods structures is still unclear. Herein, we quantitatively analyzed the charge separation dynamics in CsPbBr3 nanorods with benzoquinone (BQ) and phenothiazine (PTZ) molecules using ultrafast transient absorption spectroscopy. The exciton in the CsPbBr3 nanorod is effectively dissociated by electron transfer with a rate of 5.95 × 1010 s−1 while the hole transfer rate to PTZ is 1.31 × 1011 s−1. The efficient charge transfer rate and long-lived charge separation state in CsPbBr3 nanorod hybrids exhibit great potential in photocatalysis.
{"title":"Ultrafast charge separation in one-dimensional CsPbBr3 perovskite nanorods","authors":"Guangrui Jia, Xiangrong Zhang, Zunlue Zhu, Zhaoyong Jiao, Chaochao Qin, Shuwen Zheng","doi":"10.1016/j.jlumin.2026.121750","DOIUrl":"10.1016/j.jlumin.2026.121750","url":null,"abstract":"<div><div>One-dimensional (1D) CsPbBr<sub>3</sub> nanorods stand out due to their high crystallinity and aspect ratio. However, the charge separation process in CsPbBr<sub>3</sub> nanorods structures is still unclear. Herein, we quantitatively analyzed the charge separation dynamics in CsPbBr<sub>3</sub> nanorods with benzoquinone (BQ) and phenothiazine (PTZ) molecules using ultrafast transient absorption spectroscopy. The exciton in the CsPbBr<sub>3</sub> nanorod is effectively dissociated by electron transfer with a rate of 5.95 × 10<sup>10</sup> s<sup>−1</sup> while the hole transfer rate to PTZ is 1.31 × 10<sup>11</sup> s<sup>−1</sup>. The efficient charge transfer rate and long-lived charge separation state in CsPbBr<sub>3</sub> nanorod hybrids exhibit great potential in photocatalysis.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121750"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-23DOI: 10.1016/j.jlumin.2026.121773
Haseena Noor, Muhammad Usman, Shazma Ali, Anuda Bibi, Aiman Fatima
We numerically investigated green InGaN-based resonant cavity light-emitting diodes (RCLEDs). By incorporating an AlGaN/InGaN superlattice electron-blocking layer (SL EBL) along with a highly reflective silver (Ag) bottom mirror and a dielectric distributed Bragg reflector (DBR) as the top mirror, the device performance was significantly enhanced. Simulation results show that electron and hole concentrations increased by ∼7 % and ∼29 %, respectively, compared to the reference RCLED. The SL EBL RCLED effectively suppresses electron overflow while improving hole injection, thereby boosting radiative recombination and output power by 29 % and 122 %, respectively, with a narrow FWHM of 5.3 nm. These results demonstrate that the AlGaN/InGaN SL EBL is an effective method for improving the performance of green RCLEDs.
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Pub Date : 2026-05-01Epub Date: 2026-02-04DOI: 10.1016/j.jlumin.2026.121778
Anis Naveed, Muhammad Usman, Jamshad Bashir, Anuda Bibi
In this numerical study, we propose a dual tunnel junction (TJ)-based GaN/InGaN Green light-emitting diode (LED) structure designed to enhance carrier confinement and mitigate polarization-induced electric fields. By integrating tunnel junctions on both sides of the active region, the proposed device exhibits significant improvements in carrier concentrations—37% for electrons and 5.45% for holes—compared to the reference LED. As a result, the internal quantum efficiency (IQE) increases to 75%, surpassing the 54% observed in conventional design. Moreover, the proposed LED demonstrates a reduced efficiency droop of 37%, compared to 5% in the reference device, under a current density of 50 A/cm2. The emission intensity is also enhanced by approximately 1.5 times, validating the effectiveness of the dual-TJ configuration in achieving high-efficiency green LED performance.
在这项数值研究中，我们提出了一种基于双隧道结（TJ）的GaN/InGaN绿色发光二极管（LED）结构，旨在增强载流子约束和减轻极化感应电场。通过在有源区两侧集成隧道结，与参考LED相比，该器件的载流子浓度显著提高，电子载流子浓度为37%，空穴载流子浓度为5.45%。因此，内部量子效率（IQE）增加到75%，超过了传统设计中观察到的54%。此外，在电流密度为50 a /cm2的情况下，该LED的效率下降了37%，而参考器件的效率下降了5%。发射强度也提高了约1.5倍，验证了双tj配置在实现高效绿色LED性能方面的有效性。
{"title":"Dual tunnel junction engineering for high-IQE GaN/InGaN green LEDs","authors":"Anis Naveed, Muhammad Usman, Jamshad Bashir, Anuda Bibi","doi":"10.1016/j.jlumin.2026.121778","DOIUrl":"10.1016/j.jlumin.2026.121778","url":null,"abstract":"<div><div>In this numerical study, we propose a dual tunnel junction (TJ)-based GaN/InGaN Green light-emitting diode (LED) structure designed to enhance carrier confinement and mitigate polarization-induced electric fields. By integrating tunnel junctions on both sides of the active region, the proposed device exhibits significant improvements in carrier concentrations—37% for electrons and 5.45% for holes—compared to the reference LED. As a result, the internal quantum efficiency (IQE) increases to 75%, surpassing the 54% observed in conventional design. Moreover, the proposed LED demonstrates a reduced efficiency droop of 37%, compared to 5% in the reference device, under a current density of 50 A/cm<sup>2</sup>. The emission intensity is also enhanced by approximately 1.5 times, validating the effectiveness of the dual-TJ configuration in achieving high-efficiency green LED performance.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"293 ","pages":"Article 121778"},"PeriodicalIF":3.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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