Pub Date : 2025-11-01Epub Date: 2025-09-08DOI: 10.1016/j.jmat.2025.101125
Xiaoguang Li, Min Hyuk Park, Ji-Yan Dai, Yuewei Yin
{"title":"HfO2-based thin films and devices","authors":"Xiaoguang Li, Min Hyuk Park, Ji-Yan Dai, Yuewei Yin","doi":"10.1016/j.jmat.2025.101125","DOIUrl":"10.1016/j.jmat.2025.101125","url":null,"abstract":"","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101125"},"PeriodicalIF":9.6,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-04-24DOI: 10.1016/j.jmat.2025.101064
Zhicong Chen , Qianbiao Du , Guo Tian , Linzhao Ma , Longxiang Jiang , Chang Jiang , Zeyan Zhou , Hao Li
This study introduces a novel microwave dielectric ceramic, MgAl5/4(Li1/3Ti2/3)3/4O4, tailored for modern communication technologies. MgAl5/4(Li1/3Ti2/3)3/4O4 ceramics feature a composite spinel structure (Fd-3m space group) comprising MgAl2O4 and Li4Ti5O12 type phases. By substituting Al3+ of MgAl2O4 ceramic with the composite ion (Li1/3Ti2/3)3+, differences in elemental diffusion induced by sintering temperature (1200–1280 °C) significantly affect the microwave dielectric properties: a low εᵣ (11.83) and enhanced microwave properties (Q×f = 79,381 GHz and τf = −28.5 × 10−6/°C) at 1240 °C. With further optimization of the ceramics, a near-zero τf is realized in 0.93MgAl5/4(Li1/3Ti2/3)3/4O4-0.07CaTiO3 ceramics with excellent comprehensive performance (εr = 14.36, Q×f = 44,144 GHz). Building on this, a multi-band dielectric resonant antenna (DRA) was designed for applications in communication and aeronautical radio navigation, featuring a wide relative bandwidth of 39.37% (5.97–6.49 GHz and 7.19–9.83 GHz). This study presents an optimization strategy for obtaining microwave dielectric ceramics with low εr, high Q×f, excellent frequency-temperature stability, low sintering temperature, and low density.
{"title":"Tailoring microwave dielectric properties of MgAl5/4(Li1/3Ti2/3)3/4O4 ceramics for multi-band dielectric resonant antenna","authors":"Zhicong Chen , Qianbiao Du , Guo Tian , Linzhao Ma , Longxiang Jiang , Chang Jiang , Zeyan Zhou , Hao Li","doi":"10.1016/j.jmat.2025.101064","DOIUrl":"10.1016/j.jmat.2025.101064","url":null,"abstract":"<div><div>This study introduces a novel microwave dielectric ceramic, MgAl<sub>5/4</sub>(Li<sub>1/3</sub>Ti<sub>2/3</sub>)<sub>3/4</sub>O<sub>4</sub>, tailored for modern communication technologies. MgAl<sub>5/4</sub>(Li<sub>1/3</sub>Ti<sub>2/3</sub>)<sub>3/4</sub>O<sub>4</sub> ceramics feature a composite spinel structure (<em>Fd</em>-3m space group) comprising MgAl<sub>2</sub>O<sub>4</sub> and Li<sub>4</sub>Ti<sub>5</sub>O<sub>12</sub> type phases. By substituting Al<sup>3+</sup> of MgAl<sub>2</sub>O<sub>4</sub> ceramic with the composite ion (Li<sub>1/3</sub>Ti<sub>2/3</sub>)<sup>3+</sup>, differences in elemental diffusion induced by sintering temperature (1200–1280 °C) significantly affect the microwave dielectric properties: a low <em>ε</em>ᵣ (11.83) and enhanced microwave properties (<em>Q</em>×<em>f</em> = 79,381 GHz and <em>τ</em><sub>f</sub> = −28.5 × 10<sup>−6</sup>/°C) at 1240 °C. With further optimization of the ceramics, a near-zero <em>τ</em><sub>f</sub> is realized in 0.93MgAl<sub>5/4</sub>(Li<sub>1/3</sub>Ti<sub>2/3</sub>)<sub>3/4</sub>O<sub>4</sub>-0.07CaTiO<sub>3</sub> ceramics with excellent comprehensive performance (<em>ε</em><sub>r</sub> = 14.36, <em>Q</em>×<em>f</em> = 44,144 GHz). Building on this, a multi-band dielectric resonant antenna (DRA) was designed for applications in communication and aeronautical radio navigation, featuring a wide relative bandwidth of 39.37% (5.97–6.49 GHz and 7.19–9.83 GHz). This study presents an optimization strategy for obtaining microwave dielectric ceramics with low <em>ε</em><sub>r</sub>, high <em>Q</em>×<em>f</em>, excellent frequency-temperature stability, low sintering temperature, and low density.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101064"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-05-10DOI: 10.1016/j.jmat.2025.101076
Peng Yan , Mingming Si , Yongping Liu, Yu Ren, Jie Min, Xu Wang, Qi Ding, Weizhong Jiang, Yuchi Fan, Wan Jiang
Cold-sintered ceramics typically exhibit inferior mechanical properties compared to high-temperature sintered counterparts. We demonstrate that introducing large internal stress through highly concentrated nanodiamonds (NDs) significantly enhances cold-sintered α-quartz composites to structural ceramic levels. At 500 MPa cold-sintering pressure, uniformly dispersed NDs generate 1.2 GPa local prestress via Young's modulus difference, while pressure-modulated internal stress is evidenced by dielectric property changes. The optimized composite achieves fracture toughness of (3.65 ± 0.21) MPa·m1/2 (180% increase) and Vickers hardness of 10.6 GPa (80% increase), matching some high-temperature-sintered ceramics. Toughening arises from prestress-driven crack deflection and crack tip bridging, while hardness enhancement stems from NDs' rigid constraint and high-pressure-induced dislocations in silica matrix. Compressive strength increases by 90% and fatigue life exceeds 1000 cycles, attributed to internal stress-strengthened grain boundaries and improved toughness. This work presents a transformative strategy for developing damage-resistant ceramics, meriting further exploration of scalability and engineering applications.
{"title":"Hard, strong, and tough cold-sintered α-quartz composites as high-performance structural ceramics","authors":"Peng Yan , Mingming Si , Yongping Liu, Yu Ren, Jie Min, Xu Wang, Qi Ding, Weizhong Jiang, Yuchi Fan, Wan Jiang","doi":"10.1016/j.jmat.2025.101076","DOIUrl":"10.1016/j.jmat.2025.101076","url":null,"abstract":"<div><div>Cold-sintered ceramics typically exhibit inferior mechanical properties compared to high-temperature sintered counterparts. We demonstrate that introducing large internal stress through highly concentrated nanodiamonds (NDs) significantly enhances cold-sintered α-quartz composites to structural ceramic levels. At 500 MPa cold-sintering pressure, uniformly dispersed NDs generate 1.2 GPa local prestress <em>via</em> Young's modulus difference, while pressure-modulated internal stress is evidenced by dielectric property changes. The optimized composite achieves fracture toughness of (3.65 ± 0.21) MPa·m<sup>1</sup>/<sup>2</sup> (180% increase) and Vickers hardness of 10.6 GPa (80% increase), matching some high-temperature-sintered ceramics. Toughening arises from prestress-driven crack deflection and crack tip bridging, while hardness enhancement stems from NDs' rigid constraint and high-pressure-induced dislocations in silica matrix. Compressive strength increases by 90% and fatigue life exceeds 1000 cycles, attributed to internal stress-strengthened grain boundaries and improved toughness. This work presents a transformative strategy for developing damage-resistant ceramics, meriting further exploration of scalability and engineering applications.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101076"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143930994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-05-24DOI: 10.1016/j.jmat.2025.101077
Cangjin Li, Manwen Yao, Xi Yao, Chunyu Li
For multilayer ceramic capacitors, co-sintering of ceramics with inner electrodes is a crucial issue. This requires ceramic materials to have a low sintering temperature. In response to this criterion, a hybrid processing technology is proposed in this study. This technology involves mixing of calcined ceramic powders with sol solutions to obtain composite powders. Eventually, sintering temperature of the obtained composite material is reduced from 1300 °C to 1120 °C. This is originated from the introduction of more specific surface areas and more oxygen vacancies by sol solutions, leading to an enhancement of chemical reaction activity. The ceramic powders and the sol solutions used in this work are (Pb0.94La0.04)(Zr0.51Sn0.47Hf0.01Ti0.01)O3 and (Pb0.97La0.02)(Zr0.6Sn0.4)O3, respectively. Such composition design helps improve the dielectric constant and polarization intensity. While in the meantime, because of the strong interfacial resistance caused by sol solutions, interfacial insulation as well as electrical breakdown strength can be significantly improved. Consequently, a high energy storage density up to 12.4 J/cm3 and an efficiency of 92.4% is obtained in this work. Overall, this technology is applicable to a wide range of ceramic material systems, and provides an innovative design and manufacture of ceramics.
{"title":"A hybrid processing technology for fabricating lead zirconate-based ceramics with high energy storage density, high efficiency, and low sintering temperature","authors":"Cangjin Li, Manwen Yao, Xi Yao, Chunyu Li","doi":"10.1016/j.jmat.2025.101077","DOIUrl":"10.1016/j.jmat.2025.101077","url":null,"abstract":"<div><div>For multilayer ceramic capacitors, co-sintering of ceramics with inner electrodes is a crucial issue. This requires ceramic materials to have a low sintering temperature. In response to this criterion, a hybrid processing technology is proposed in this study. This technology involves mixing of calcined ceramic powders with sol solutions to obtain composite powders. Eventually, sintering temperature of the obtained composite material is reduced from 1300 °C to 1120 °C. This is originated from the introduction of more specific surface areas and more oxygen vacancies by sol solutions, leading to an enhancement of chemical reaction activity. The ceramic powders and the sol solutions used in this work are (Pb<sub>0.94</sub>La<sub>0.04</sub>)(Zr<sub>0.51</sub>Sn<sub>0.47</sub>Hf<sub>0.01</sub>Ti<sub>0.01</sub>)O<sub>3</sub> and (Pb<sub>0.97</sub>La<sub>0.02</sub>)(Zr<sub>0.6</sub>Sn<sub>0.4</sub>)O<sub>3</sub>, respectively. Such composition design helps improve the dielectric constant and polarization intensity. While in the meantime, because of the strong interfacial resistance caused by sol solutions, interfacial insulation as well as electrical breakdown strength can be significantly improved. Consequently, a high energy storage density up to 12.4 J/cm<sup>3</sup> and an efficiency of 92.4% is obtained in this work. Overall, this technology is applicable to a wide range of ceramic material systems, and provides an innovative design and manufacture of ceramics.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101077"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144130452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, the inequivalent substitution of Ca2+ by Li+ in the Ca3Co2SiV2O12 compound was designed to modulate its sintering characteristics and microwave dielectric properties. The corresponding Ca3–xLi2xCo2SiV2O12 (CCSV-xLi, 0.01≤ x ≤ 0.07) ceramics were prepared via the conventional solid-state phase method, which could be densely sintered at a temperature below 1140 °C. Rietveld refinement results suggested that all the doped Li occupied the Ca-site as x ≤ 0.05 while superfluous Li positioned at the Co-site of CCSV when x = 0.07. This atomic occupancy had a remarkable effect on the degree of “rattling effect” and thus modulated the relative permittivity of ceramics, constantly increasing at x = 0.01–0.05 and slightly decreasing at x = 0.07. Raman spectra revealed that Q×f value was closely related to Raman shift and FWHM. Also, the Q×f value was partly influenced by oxygen vacancy concentration. The τf demonstrated an opposite tendency to the bond valence of the A-site and was affected by the “rattling effect”. The CCSV-0.05Li ceramic sintered at 1120 °C possessed excellent microwave dielectric properties: εr = 12.17, Q×f = 56,220 GHz, and τf = −8.5 × 10−6 °C−1.
{"title":"Modulation in sintering characteristics and microwave dielectric properties of Ca3Co2SiV2O12 via Li+ inequivalent substitution","authors":"Zhenli Tao, Jiamao Li, Junxian Wang, Yuxuan Ren, Yunfeng Guo, Qinghe Yang, Zhihao Yuan, Rui Tian, Wenbo Wang","doi":"10.1016/j.jmat.2025.101074","DOIUrl":"10.1016/j.jmat.2025.101074","url":null,"abstract":"<div><div>In this study, the inequivalent substitution of Ca<sup>2+</sup> by Li<sup>+</sup> in the Ca<sub>3</sub>Co<sub>2</sub>SiV<sub>2</sub>O<sub>12</sub> compound was designed to modulate its sintering characteristics and microwave dielectric properties. The corresponding Ca<sub>3–<em>x</em></sub>Li<sub>2<em>x</em></sub>Co<sub>2</sub>SiV<sub>2</sub>O<sub>12</sub> (CCSV-<em>x</em>Li, 0.01≤ <em>x</em> ≤ 0.07) ceramics were prepared <em>via</em> the conventional solid-state phase method, which could be densely sintered at a temperature below 1140 °C. Rietveld refinement results suggested that all the doped Li occupied the Ca-site as <em>x</em> ≤ 0.05 while superfluous Li positioned at the Co-site of CCSV when <em>x</em> = 0.07. This atomic occupancy had a remarkable effect on the degree of “rattling effect” and thus modulated the relative permittivity of ceramics, constantly increasing at <em>x</em> = 0.01–0.05 and slightly decreasing at <em>x</em> = 0.07. Raman spectra revealed that <em>Q</em>×<em>f</em> value was closely related to Raman shift and FWHM. Also, the <em>Q</em>×<em>f</em> value was partly influenced by oxygen vacancy concentration. The <em>τ</em><sub>f</sub> demonstrated an opposite tendency to the bond valence of the A-site and was affected by the “rattling effect”. The CCSV-0.05Li ceramic sintered at 1120 °C possessed excellent microwave dielectric properties: <em>ε</em><sub>r</sub> = 12.17, <em>Q</em>×<em>f</em> = 56,220 GHz, and <em>τ</em><sub>f</sub> = −8.5 × 10<sup>−6</sup> °C<sup>−1</sup>.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101074"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-06-18DOI: 10.1016/j.jmat.2025.101103
Junxi Yu , Yuan Zhang , Songjie Yang , Chunlin Song , Shiyao Xu , Boyuan Huang , Qingyuan Wang , Jiangyu Li
Two-dimensional (2D) molybdenum disulfide (MoS2) has shown considerable potential for photodetection, yet existing MoS2-based photodetectors require either external voltage bias or complex heterojunctions. In this work, we present a new device concept based on flexoelectric engineering of bulk photovoltaic effect (BPVE) of 2HMoS2, simplifying the device configuration considerably while enhancing its self-powered photodetection performance. By introducing a strain gradient in the suspended 2HMoS2, we break its inversion symmetry, resulting in BPVE in the otherwise centrosymmetric system. The significant flexoelectric polarization induced also facilitates efficient photocarrier separation, leading to a 41-fold enhancement in short-circuit photocurrent under a strain gradient of . Furthermore, the flexoelectric-engineered photodetector can be dynamically tuned via air pressure, enabling multilevel photoconductance and achieving a responsivity of 191 mA/W. This performance surpasses existing self-powered MoS2-based photodetectors reported in literature, offering a strategy for enhanced photodetection.
{"title":"Self-powered tunable photodetection via flexoelectric engineering of single-phase 2HMoS2","authors":"Junxi Yu , Yuan Zhang , Songjie Yang , Chunlin Song , Shiyao Xu , Boyuan Huang , Qingyuan Wang , Jiangyu Li","doi":"10.1016/j.jmat.2025.101103","DOIUrl":"10.1016/j.jmat.2025.101103","url":null,"abstract":"<div><div>Two-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) has shown considerable potential for photodetection, yet existing MoS<sub>2</sub>-based photodetectors require either external voltage bias or complex heterojunctions. In this work, we present a new device concept based on flexoelectric engineering of bulk photovoltaic effect (BPVE) of 2H<img>MoS<sub>2</sub>, simplifying the device configuration considerably while enhancing its self-powered photodetection performance. By introducing a strain gradient in the suspended 2H<img>MoS<sub>2</sub>, we break its inversion symmetry, resulting in BPVE in the otherwise centrosymmetric system. The significant flexoelectric polarization induced also facilitates efficient photocarrier separation, leading to a 41-fold enhancement in short-circuit photocurrent under a strain gradient of <span><math><mn>0.95</mn><mspace></mspace><msup><mi>μm</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></math></span>. Furthermore, the flexoelectric-engineered photodetector can be dynamically tuned <em>via</em> air pressure, enabling multilevel photoconductance and achieving a responsivity of 191 mA/W. This performance surpasses existing self-powered MoS<sub>2</sub>-based photodetectors reported in literature, offering a strategy for enhanced photodetection.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101103"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-05-09DOI: 10.1016/j.jmat.2025.101069
Zhan Zeng , Jin Cheng , Xinwei Xu , Hongye Wang , Yani Lu , Liang Sun , Naichao Chen , Xiaoyu Li , Boshen Zhang , Hong Wang
As electronic devices become increasingly miniaturized and demand greater integration, traditional packaging technologies face substantial challenges in meeting the needs for high-frequency performance and system reliability. Ceramic materials, known for their excellent dielectric properties and thermal stability, are promising candidates for advanced packaging applications. However, conventional high-temperature densification processes, which often exceed 1000 °C, restrict their compatibility with temperature-sensitive components in modern electronic systems. To overcome this limitation, we propose a novel approach to densify Al2O3H3BO3 ceramic at room temperature under low uniaxial stress. It is found that a H3BO3 facilitates plastic deformation in the medium of deionized water, enhancing the densification of Al2O3H3BO3 ceramics even at minimal uniaxial stress. The resulting material exhibits a high relative density of over 96% and possesses excellent microwave dielectric properties (relative permittivity : 2.84–5.37; values: 12,924–69,000 GHz; resonant frequency values: −156.94 10−6 °C−1 to −73.42 10−6 °C−1) and thermal conductivity ( values: 1.96–5.96 W·m−1·K−1). After co-firing with a silicon wafer, the ceramic maintains its structural integrity, with no observable atomic diffusion at the ceramic-silicon interface, rendering it a potential candidate for advanced packaging and integration technologies.
{"title":"Room-temperature densified Al2O3-H3BO3 ceramics with excellent microwave dielectric properties and thermal conductivity for chip packaging","authors":"Zhan Zeng , Jin Cheng , Xinwei Xu , Hongye Wang , Yani Lu , Liang Sun , Naichao Chen , Xiaoyu Li , Boshen Zhang , Hong Wang","doi":"10.1016/j.jmat.2025.101069","DOIUrl":"10.1016/j.jmat.2025.101069","url":null,"abstract":"<div><div>As electronic devices become increasingly miniaturized and demand greater integration, traditional packaging technologies face substantial challenges in meeting the needs for high-frequency performance and system reliability. Ceramic materials, known for their excellent dielectric properties and thermal stability, are promising candidates for advanced packaging applications. However, conventional high-temperature densification processes, which often exceed 1000 °C, restrict their compatibility with temperature-sensitive components in modern electronic systems. To overcome this limitation, we propose a novel approach to densify Al<sub>2</sub>O<sub>3</sub><img>H<sub>3</sub>BO<sub>3</sub> ceramic at room temperature under low uniaxial stress. It is found that a H<sub>3</sub>BO<sub>3</sub> facilitates plastic deformation in the medium of deionized water, enhancing the densification of Al<sub>2</sub>O<sub>3</sub><img>H<sub>3</sub>BO<sub>3</sub> ceramics even at minimal uniaxial stress. The resulting material exhibits a high relative density of over 96% and possesses excellent microwave dielectric properties (relative permittivity <span><math><msub><mi>ε</mi><mi>r</mi></msub></math></span>: 2.84–5.37; <span><math><mrow><mi>Q</mi><mo>×</mo><mi>f</mi></mrow></math></span> values: 12,924–69,000 GHz; resonant frequency <span><math><msub><mi>τ</mi><mi>f</mi></msub></math></span> values: −156.94 10<sup>−6</sup> °C<sup>−1</sup> to −73.42 10<sup>−6</sup> °C<sup>−1</sup>) and thermal conductivity (<span><math><mrow><mi>λ</mi></mrow></math></span> values: 1.96–5.96 W·m<sup>−1</sup>·K<sup>−1</sup>). After co-firing with a silicon wafer, the ceramic maintains its structural integrity, with no observable atomic diffusion at the ceramic-silicon interface, rendering it a potential candidate for advanced packaging and integration technologies.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101069"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143926348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-04-18DOI: 10.1016/j.jmat.2025.101067
Changjin Guo , Yu Tan , Jiajun Zhu , Jiyang Xie , Chengding Gu , Wanbiao Hu
What is the nature of the electric (dielectric/ferroelectric) properties of CuInP2S6 (CIPS)? CIPS, considered an emerging two-dimensional (2D) ferroelectric, has been well explored in various properties and applications. However, the most important and fundamental nature, i.e. dielectric/ferroelectric property, has been controversial, because high-quality CIPS samples are grossly deficient. In this work, single crystal CIPS is successfully synthesized by the chemical vapour transport method, which presents “high quality” in terms of high purity, excellent crystallinity, uniform composition, and defect-free structure etc. that are confirmed through comprehensive characterization techniques. With performing high-quality single crystal, we fully uncover the intrinsic electric properties of CIPS through accurately identifying the atomic arrangement, electron configuration, magnetic, dielectric, and ferroelectric properties that should reach a consensus on such a disputed CIPS material. These findings serve as a pivotal benchmark for a comprehensive understanding of the inherent electric characteristics of CIPS, offering valuable insights for its future modifications and applications in various applications.
{"title":"High quality CuInP2S6 single crystal for intrinsic electric property","authors":"Changjin Guo , Yu Tan , Jiajun Zhu , Jiyang Xie , Chengding Gu , Wanbiao Hu","doi":"10.1016/j.jmat.2025.101067","DOIUrl":"10.1016/j.jmat.2025.101067","url":null,"abstract":"<div><div>What is the nature of the electric (dielectric/ferroelectric) properties of CuInP<sub>2</sub>S<sub>6</sub> (CIPS)? CIPS, considered an emerging two-dimensional (2D) ferroelectric, has been well explored in various properties and applications. However, the most important and fundamental nature, <em>i.e.</em> dielectric/ferroelectric property, has been controversial, because high-quality CIPS samples are grossly deficient. In this work, single crystal CIPS is successfully synthesized by the chemical vapour transport method, which presents “high quality” in terms of high purity, excellent crystallinity, uniform composition, and defect-free structure <em>etc</em>. that are confirmed through comprehensive characterization techniques. With performing high-quality single crystal, we fully uncover the intrinsic electric properties of CIPS through accurately identifying the atomic arrangement, electron configuration, magnetic, dielectric, and ferroelectric properties that should reach a consensus on such a disputed CIPS material. These findings serve as a pivotal benchmark for a comprehensive understanding of the inherent electric characteristics of CIPS, offering valuable insights for its future modifications and applications in various applications.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101067"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143846596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-04-21DOI: 10.1016/j.jmat.2025.101065
Yutao Luo , Tianyang Zheng , Song Liu , Yunfei Liu , Yinong Lyu , Jin Luo
With the development of advanced electronic memory and the advocacy of environmental friendliness, lead-free relaxor ferroelectric capacitors with slim hysteresis loops have received great attention in high power energy storage applications. However, various emerging defects in Sr0.7Bi0.2TiO3 based relaxor ferroelectric films can result in inferior energy storage performance. In this work, Mn doping is utilized to modify the defects caused by the excessive Bi compensation in the Sr0.7Bi0.2TiO3 relaxor ferroelectric thin films. Those Mn doped Sr0.7Bi0.2TiO3 thin films exhibits significantly improved recoverable energy storage density by more than one order of magnitude with an ultrahigh energy storage density (126 J/cm3). By analyzing the change of the chemical environment and using the scanning transmission electron microscopy, we reveal these improved energy storage performances arises from the formation of defect dipoles of Mn2+ at B site with oxygen vacancies, suppressing the volume of oxygen vacancies and titanium vacancies simultaneously, and the slush-like “single domain” structure with fluctuated B-site cation displacements stabilized and confined in a single nano-sized crystal grain. This chemical modification strategy in this work can serve as a regular approach to suppress the defects and improve the energy storage performance in ferroelectric thin films with volatile elements.
{"title":"Ultrahigh energy storage performance via defect engineering in Sr0.7Bi0.2TiO3 lead-free relaxor ferroelectrics","authors":"Yutao Luo , Tianyang Zheng , Song Liu , Yunfei Liu , Yinong Lyu , Jin Luo","doi":"10.1016/j.jmat.2025.101065","DOIUrl":"10.1016/j.jmat.2025.101065","url":null,"abstract":"<div><div>With the development of advanced electronic memory and the advocacy of environmental friendliness, lead-free relaxor ferroelectric capacitors with slim hysteresis loops have received great attention in high power energy storage applications. However, various emerging defects in Sr<sub>0.7</sub>Bi<sub>0.2</sub>TiO<sub>3</sub> based relaxor ferroelectric films can result in inferior energy storage performance. In this work, Mn doping is utilized to modify the defects caused by the excessive Bi compensation in the Sr<sub>0.7</sub>Bi<sub>0.2</sub>TiO<sub>3</sub> relaxor ferroelectric thin films. Those Mn doped Sr<sub>0.7</sub>Bi<sub>0.2</sub>TiO<sub>3</sub> thin films exhibits significantly improved recoverable energy storage density by more than one order of magnitude with an ultrahigh energy storage density (126 J/cm<sup>3</sup>). By analyzing the change of the chemical environment and using the scanning transmission electron microscopy, we reveal these improved energy storage performances arises from the formation of defect dipoles of Mn<sup>2+</sup> at B site with oxygen vacancies, suppressing the volume of oxygen vacancies and titanium vacancies simultaneously, and the slush-like “single domain” structure with fluctuated B-site cation displacements stabilized and confined in a single nano-sized crystal grain. This chemical modification strategy in this work can serve as a regular approach to suppress the defects and improve the energy storage performance in ferroelectric thin films with volatile elements.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101065"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-01Epub Date: 2025-05-02DOI: 10.1016/j.jmat.2025.101068
Zhen Zhou , Lvkang Shen , Xiaohua Xing , Keyu Tan , Die Zou , Qiankun Zhang , Rui Zhu , Zhiyong Wang , Jianquan Yao , Ming Liu , Liang Wu
With the advancement of spintronics, tunability has emerged as a highly sought-after attribute of magnetic materials. Nevertheless, the comprehension of the terahertz (THz) optical characteristics of tunable magnetic materials driven by external excitation fields remains limited, necessitating further qualitative and quantitative investigation. Here we demonstrate the tunable optical properties of the LiFe5O8 (LFO)/F-Mica structure under magnetic field by a THz time-domain spectroscopy (THz-TDS) system. The prepared LFO/F-Mica structure shows significant changes in dielectric properties and absorption coefficients under different magnetic fields, which is attributed to the interaction of the magnetic field with the spins of ordered magnetic ions (Fe3+) located in a non-centrosymmetric coordination environment. In addition, we investigate the specific contribution of the external laser field to the THz optical parameters of the LFO/F-Mica. The dielectric properties and THz optical response of LFO/F-Mica significantly depend on the laser power under 532 nm laser pumping. The modulation effects of these diverse external fields reveal the potential of lithium ferrites for applications in the THz band. These findings offer valuable insights for the development of tunable multifunctional THz magnetic devices, with potential applications in the fields of communications, medicine, and nondestructive testing.
{"title":"Observation of tunable terahertz optical response in nanoscale lithium ferrite driven by magnetic field and laser","authors":"Zhen Zhou , Lvkang Shen , Xiaohua Xing , Keyu Tan , Die Zou , Qiankun Zhang , Rui Zhu , Zhiyong Wang , Jianquan Yao , Ming Liu , Liang Wu","doi":"10.1016/j.jmat.2025.101068","DOIUrl":"10.1016/j.jmat.2025.101068","url":null,"abstract":"<div><div>With the advancement of spintronics, tunability has emerged as a highly sought-after attribute of magnetic materials. Nevertheless, the comprehension of the terahertz (THz) optical characteristics of tunable magnetic materials driven by external excitation fields remains limited, necessitating further qualitative and quantitative investigation. Here we demonstrate the tunable optical properties of the LiFe<sub>5</sub>O<sub>8</sub> (LFO)/F-Mica structure under magnetic field by a THz time-domain spectroscopy (THz-TDS) system. The prepared LFO/F-Mica structure shows significant changes in dielectric properties and absorption coefficients under different magnetic fields, which is attributed to the interaction of the magnetic field with the spins of ordered magnetic ions (Fe<sup>3+</sup>) located in a non-centrosymmetric coordination environment. In addition, we investigate the specific contribution of the external laser field to the THz optical parameters of the LFO/F-Mica. The dielectric properties and THz optical response of LFO/F-Mica significantly depend on the laser power under 532 nm laser pumping. The modulation effects of these diverse external fields reveal the potential of lithium ferrites for applications in the THz band. These findings offer valuable insights for the development of tunable multifunctional THz magnetic devices, with potential applications in the fields of communications, medicine, and nondestructive testing.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101068"},"PeriodicalIF":8.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143897621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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