Pub Date : 2021-07-03DOI: 10.1080/15980316.2021.1941339
Hyeyoung Ha, Y. Kwak, Hyosun Kim, Young-Jun Seo, Sung-Chan Jo
A psychophysical experiment was conducted to compare the discomfort luminance level and the brightness of a head-mounted display (HMD). The results showed that as the size of the HMD stimulus increased, both the discomfort luminance level of the HMD and the brightness of the HMD decreased, but the influence of the size change was more dramatic on the discomfort luminance level than on the brightness. This study showed that to provide a comfortable luminance level for HMDs, the adaptation luminance level and the size of the HMD stimulus should be considered. However, it cannot be predicted in terms of brightness.
{"title":"Perceptual difference between the discomfort luminance level and the brightness of a head-mounted display (HMD)","authors":"Hyeyoung Ha, Y. Kwak, Hyosun Kim, Young-Jun Seo, Sung-Chan Jo","doi":"10.1080/15980316.2021.1941339","DOIUrl":"https://doi.org/10.1080/15980316.2021.1941339","url":null,"abstract":"A psychophysical experiment was conducted to compare the discomfort luminance level and the brightness of a head-mounted display (HMD). The results showed that as the size of the HMD stimulus increased, both the discomfort luminance level of the HMD and the brightness of the HMD decreased, but the influence of the size change was more dramatic on the discomfort luminance level than on the brightness. This study showed that to provide a comfortable luminance level for HMDs, the adaptation luminance level and the size of the HMD stimulus should be considered. However, it cannot be predicted in terms of brightness.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"187 - 191"},"PeriodicalIF":3.7,"publicationDate":"2021-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1941339","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41494156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-02DOI: 10.1080/15980316.2021.1947403
W. Park, Dong-pil Park, Sang Soo Kim
The development of large-area organic light-emitting diode (OLED) displays requires a highly efficient tandem device architecture and an easily processable charge generation layer (CGL) with a low voltage drop and high optical transparency. In this study, we investigated and applied a doped organic n-CGL/p-CGL using thermal vacuum deposition in tandem OLED devices. A doping concentration of 1.0 wt.% for Li in 4, 7-Diphenyl-1, 10-phenanthroline (BPhen) was optimal for the n-CGL with 8 wt.% for 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)-malononitrile (NDP-9)-doped N,N-bis(4-methylphenyl)benzenamine (TAPC) as a p-CGL. Maximum luminous efficiencies of 42.5 and 63.4 cd/A and a 4,000 cd/m2 current density for the target luminance values of 11.2 and 6.5 mA/cm2 were demonstrated for double-stack and triple-stack tandem blue phosphorescent OLED devices, respectively. Implementing these highly efficient tandem device structures will improve the overall lifetime of OLED displays by lowering their operating current density at the target luminance.
{"title":"Highly efficient tandem PHOLEDs with lithium-doped BPhen/NDP-9-doped TAPC as a charge generation layer","authors":"W. Park, Dong-pil Park, Sang Soo Kim","doi":"10.1080/15980316.2021.1947403","DOIUrl":"https://doi.org/10.1080/15980316.2021.1947403","url":null,"abstract":"The development of large-area organic light-emitting diode (OLED) displays requires a highly efficient tandem device architecture and an easily processable charge generation layer (CGL) with a low voltage drop and high optical transparency. In this study, we investigated and applied a doped organic n-CGL/p-CGL using thermal vacuum deposition in tandem OLED devices. A doping concentration of 1.0 wt.% for Li in 4, 7-Diphenyl-1, 10-phenanthroline (BPhen) was optimal for the n-CGL with 8 wt.% for 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)-malononitrile (NDP-9)-doped N,N-bis(4-methylphenyl)benzenamine (TAPC) as a p-CGL. Maximum luminous efficiencies of 42.5 and 63.4 cd/A and a 4,000 cd/m2 current density for the target luminance values of 11.2 and 6.5 mA/cm2 were demonstrated for double-stack and triple-stack tandem blue phosphorescent OLED devices, respectively. Implementing these highly efficient tandem device structures will improve the overall lifetime of OLED displays by lowering their operating current density at the target luminance.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"45 - 52"},"PeriodicalIF":3.7,"publicationDate":"2021-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1947403","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46652579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-01DOI: 10.1080/15980316.2021.1933223
J. Park, Won-Gi Kim, Hyukjoon Yoo, H. Kim, D. Choi, Min Seong Kim, Hyun Jae Kim
We used a pulsed green laser to activate indium gallium zinc oxide thin-film transistors (IGZO TFTs). The IGZO films with large bandgaps (>3 eV) were easily activated by heat delivered by a pulsed green laser to the gate, source, and drain metal electrodes. The IGZO TFTs were quickly and selectively activated in the absence of conventional annealing. Compared to the IGZO TFTs that were annealed at 300°C, the IGZO TFTs that were activated via pulsed green laser irradiation exhibited superior electrical characteristics: a field effect mobility of 11.98 ± 0.64 cm2 V−1 s−1, a subthreshold swing of 0.33 ± 0.02 V dec−1, and an on/off ratio of 8.28 × 109 ± 7.42 × 109, which were attributable to increases in the number of metal–oxide (M-O) bonds and oxygen vacancies, and reduced levels of OH-related species. The pulsed green laser broke weak chemical M-O bonds in the IGZO films through dihydroxylation of the OH-related species, and then strengthened the residual M-O bonds via heat transfer from the metal electrodes. This new activation process could replace conventional annealing and is expected to expand the applications of flexible and transparent devices.
{"title":"Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption","authors":"J. Park, Won-Gi Kim, Hyukjoon Yoo, H. Kim, D. Choi, Min Seong Kim, Hyun Jae Kim","doi":"10.1080/15980316.2021.1933223","DOIUrl":"https://doi.org/10.1080/15980316.2021.1933223","url":null,"abstract":"We used a pulsed green laser to activate indium gallium zinc oxide thin-film transistors (IGZO TFTs). The IGZO films with large bandgaps (>3 eV) were easily activated by heat delivered by a pulsed green laser to the gate, source, and drain metal electrodes. The IGZO TFTs were quickly and selectively activated in the absence of conventional annealing. Compared to the IGZO TFTs that were annealed at 300°C, the IGZO TFTs that were activated via pulsed green laser irradiation exhibited superior electrical characteristics: a field effect mobility of 11.98 ± 0.64 cm2 V−1 s−1, a subthreshold swing of 0.33 ± 0.02 V dec−1, and an on/off ratio of 8.28 × 109 ± 7.42 × 109, which were attributable to increases in the number of metal–oxide (M-O) bonds and oxygen vacancies, and reduced levels of OH-related species. The pulsed green laser broke weak chemical M-O bonds in the IGZO films through dihydroxylation of the OH-related species, and then strengthened the residual M-O bonds via heat transfer from the metal electrodes. This new activation process could replace conventional annealing and is expected to expand the applications of flexible and transparent devices.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"33 - 43"},"PeriodicalIF":3.7,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1933223","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46533277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-28DOI: 10.1080/15980316.2021.1923581
Sehwan Na, Won Kyung Min, Do Hyung Kim, H. Hwang, Yong‐Min Ha, Hyun Jae Kim
The principal causes of the poor picture quality on active matrix organic light-emitting diode (AMOLED) displays, operating under extremely low brightness and gray-scale conditions, were analyzed and verified by measuring and modelling of the electrical simulations. Through the analysis, it was found that the deteriorated picture quality was induced by a delayed saturation voltage, which means the electric potential difference between the initial voltage applied to the anode of the OLED (Vinit) and the OLED saturated voltage (Vsat) for emission. This is because the deviations of pico-ampere-level currents and delayed OLED charging prior to light emission increased the saturation voltage when there were low driving currents. Thus, we optimized the voltage by increasing Vinit from −4.5 to −2.7 V, effectively eliminating image deterioration by reducing the OLED charging delay. Thus, the proposed approach opens up advancements of obtaining superior picture quality with ultra-low luminance, even in the dark illuminance environments. We discuss how OLED picture quality may be enhanced under low brightness, including the driving methods, design considerations, and processes involved.
{"title":"Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays","authors":"Sehwan Na, Won Kyung Min, Do Hyung Kim, H. Hwang, Yong‐Min Ha, Hyun Jae Kim","doi":"10.1080/15980316.2021.1923581","DOIUrl":"https://doi.org/10.1080/15980316.2021.1923581","url":null,"abstract":"The principal causes of the poor picture quality on active matrix organic light-emitting diode (AMOLED) displays, operating under extremely low brightness and gray-scale conditions, were analyzed and verified by measuring and modelling of the electrical simulations. Through the analysis, it was found that the deteriorated picture quality was induced by a delayed saturation voltage, which means the electric potential difference between the initial voltage applied to the anode of the OLED (Vinit) and the OLED saturated voltage (Vsat) for emission. This is because the deviations of pico-ampere-level currents and delayed OLED charging prior to light emission increased the saturation voltage when there were low driving currents. Thus, we optimized the voltage by increasing Vinit from −4.5 to −2.7 V, effectively eliminating image deterioration by reducing the OLED charging delay. Thus, the proposed approach opens up advancements of obtaining superior picture quality with ultra-low luminance, even in the dark illuminance environments. We discuss how OLED picture quality may be enhanced under low brightness, including the driving methods, design considerations, and processes involved.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"275 - 284"},"PeriodicalIF":3.7,"publicationDate":"2021-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1923581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43822918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-02DOI: 10.1080/15980316.2021.1917461
Chan-mo Kang, Hyunkoo Lee
Microdisplays have been used in various applications such as beam projectors, view finders of digital cameras, projection TVs, night vision for military use, and augmented reality/virtual reality (AR/VR) devices. Organic light-emitting diode (OLED) microdisplays have attracted much attention as main displays of glass-type and head-mounted-type AR/VR devices due to their rich colors, high contrast ratio, fast response time, small form factor, and high resolution. This review investigates the device, process, pixel circuit, and panel technologies for OLED microdisplays. In addition, the technology status and issues of OLED microdisplays are discussed.
{"title":"Recent progress of organic light-emitting diode microdisplays for augmented reality/virtual reality applications","authors":"Chan-mo Kang, Hyunkoo Lee","doi":"10.1080/15980316.2021.1917461","DOIUrl":"https://doi.org/10.1080/15980316.2021.1917461","url":null,"abstract":"Microdisplays have been used in various applications such as beam projectors, view finders of digital cameras, projection TVs, night vision for military use, and augmented reality/virtual reality (AR/VR) devices. Organic light-emitting diode (OLED) microdisplays have attracted much attention as main displays of glass-type and head-mounted-type AR/VR devices due to their rich colors, high contrast ratio, fast response time, small form factor, and high resolution. This review investigates the device, process, pixel circuit, and panel technologies for OLED microdisplays. In addition, the technology status and issues of OLED microdisplays are discussed.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"19 - 32"},"PeriodicalIF":3.7,"publicationDate":"2021-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1917461","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47154384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-23DOI: 10.1080/15980316.2021.1911866
Wei Qin, B. Kang, Jongyeop An, Hyun Jae Kim
ABSTRACT Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.
{"title":"Indium oxide nanomesh-based electrolyte-gated synaptic transistors","authors":"Wei Qin, B. Kang, Jongyeop An, Hyun Jae Kim","doi":"10.1080/15980316.2021.1911866","DOIUrl":"https://doi.org/10.1080/15980316.2021.1911866","url":null,"abstract":"ABSTRACT Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"179 - 185"},"PeriodicalIF":3.7,"publicationDate":"2021-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1911866","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48499230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-04-03DOI: 10.1080/15980316.2020.1866090
D. Yoon, Y. Kang, R. Bail, B. Chin
In this paper, the effects of the combination of solvents on the uniformity of a dried emitting layer and on device performance were studied. Green emitter inks with various solvents were prepared, and it was seen that good film uniformity of printed layers could be obtained with a solvent mixture with different boiling points, which reduced the coffee ring effect on a dried surface. During the inkjet process, the drop injection condition aiming was also controlled for better drop-to-drop spacing and reduction of the line-edge roughness. Printed patterns of a small molecular/polymer hybrid emitting layer, composed of the chlorobenzene-dichlorobenzene solvent mixture, showed significantly reduced roughness of the microscopic surface and improved efficiency of the inkjet device, at levels nearly comparable to those of spin-coated patterns. A suitable hole transport layer (HTL) was also further developed as an interfacial material, prior to the solution processing of the emitter. The cross-linkable HTL was composed of triphenylamine as the cross-linking unit and a fluorene-based compound. At the optimized condition of the solvent formulation, printed droplets within 100 µm× 300 µm pixels formed a uniform stripe without remarkable coffee-ring defects and line-edge surface roughness.
{"title":"Interfaces and pattern resolution of inkjet-printed organic light-emitting diodes with a novel hole transport layer","authors":"D. Yoon, Y. Kang, R. Bail, B. Chin","doi":"10.1080/15980316.2020.1866090","DOIUrl":"https://doi.org/10.1080/15980316.2020.1866090","url":null,"abstract":"In this paper, the effects of the combination of solvents on the uniformity of a dried emitting layer and on device performance were studied. Green emitter inks with various solvents were prepared, and it was seen that good film uniformity of printed layers could be obtained with a solvent mixture with different boiling points, which reduced the coffee ring effect on a dried surface. During the inkjet process, the drop injection condition aiming was also controlled for better drop-to-drop spacing and reduction of the line-edge roughness. Printed patterns of a small molecular/polymer hybrid emitting layer, composed of the chlorobenzene-dichlorobenzene solvent mixture, showed significantly reduced roughness of the microscopic surface and improved efficiency of the inkjet device, at levels nearly comparable to those of spin-coated patterns. A suitable hole transport layer (HTL) was also further developed as an interfacial material, prior to the solution processing of the emitter. The cross-linkable HTL was composed of triphenylamine as the cross-linking unit and a fluorene-based compound. At the optimized condition of the solvent formulation, printed droplets within 100 µm× 300 µm pixels formed a uniform stripe without remarkable coffee-ring defects and line-edge surface roughness.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"91 - 98"},"PeriodicalIF":3.7,"publicationDate":"2021-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2020.1866090","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47148982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-03-30DOI: 10.1080/15980316.2021.1905723
Geonhyeong Park, D. Yoon
ABSTRACT We report on bilayer dichroic dye-doped liquid crystal (BDLC) films for patternable color codes, which can be used in anti-counterfeiting applications such as security codes and, unlike the conventional single-layer LC color films, show unique color changes depending on the direction of the polarization of the incident light that passes through them. This is a facile way to enhance the security level of security codes. BDLC films are fabricated by laminating two single-layer LC polymer network films with crossed optical axes. We believe that BDLC films can be used as a new platform for a security-enhanced anti-counterfeiting code that can replace complex chiral materials or expensive plasmonic particles.
{"title":"Security use of bilayer dichroic films made of liquid crystal polymer networks","authors":"Geonhyeong Park, D. Yoon","doi":"10.1080/15980316.2021.1905723","DOIUrl":"https://doi.org/10.1080/15980316.2021.1905723","url":null,"abstract":"ABSTRACT We report on bilayer dichroic dye-doped liquid crystal (BDLC) films for patternable color codes, which can be used in anti-counterfeiting applications such as security codes and, unlike the conventional single-layer LC color films, show unique color changes depending on the direction of the polarization of the incident light that passes through them. This is a facile way to enhance the security level of security codes. BDLC films are fabricated by laminating two single-layer LC polymer network films with crossed optical axes. We believe that BDLC films can be used as a new platform for a security-enhanced anti-counterfeiting code that can replace complex chiral materials or expensive plasmonic particles.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"173 - 178"},"PeriodicalIF":3.7,"publicationDate":"2021-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1905723","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45538371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-03-22DOI: 10.1080/15980316.2021.1902405
Chan-mo Kang, Jin‐Wook Shin, Sukyung Choi, Byoung‐Hwa Kwon, Hyunsu Cho, N. Cho, Jeong-Ik Lee, Hyunkoo Lee, Jeong Hwan Lee, Hokwon Kim, Ara Cho, Sang Hyun Park, Minseok Kim, Soon-gi Park, Young-Joon Kim, Jeonghun Ha, Jaehyeok Kim, S. Kim, J. S. Lee, Seung No Lee, Yu-Bin Im, C. Byun
Organic light-emitting diode (OLED) microdisplays have attracted much attention as displays for small form factor augmented reality (AR) devices. To realize glass-like thin and wide field of view (FoV) AR devices, we designed a display module with a high aspect ratio microdisplay and a thin optical component. For the high aspect ratio microdisplay, we developed the color OLED microdisplay with a 32:9 aspect ratio and a 0.8-inch diagonal ∼2,490-ppi CMOS backplane. To express color and reduce optical crosstalk, we fabricated the color filter (C/F) patterning directly on the white OLED. We also developed a pin mirror lens with 11 pin mirrors to improve the optical efficiency and quality with a thin lens. By combining the microdisplay with LetinAR’s pin mirror lens, we successfully demonstrated an AR device with a wide horizontal FoV of 46° but with a small form factor 4 mm lens.
有机发光二极管（OLED）微型显示器作为小尺寸增强现实（AR）设备的显示器已经引起了人们的广泛关注。为了实现玻璃状薄宽视场（FoV）AR设备，我们设计了一种具有高宽高比微型显示器和薄光学元件的显示模块。对于高宽高比微型显示器，我们开发了宽高比为32:9、对角线为0.8英寸～2490 ppi CMOS背板的彩色OLED微型显示器。为了表现颜色和减少光学串扰，我们直接在白色OLED上制作了滤色器（C/F）图案。我们还开发了一种带有11针反射镜的针反射镜透镜，以提高薄透镜的光学效率和质量。通过将微型显示器与LetinAR的针镜镜头相结合，我们成功地展示了一种具有46°宽水平FoV但形状因子为4的AR设备 mm透镜。
{"title":"High aspect ratio microdisplay and thin optical component for glass-like AR devices","authors":"Chan-mo Kang, Jin‐Wook Shin, Sukyung Choi, Byoung‐Hwa Kwon, Hyunsu Cho, N. Cho, Jeong-Ik Lee, Hyunkoo Lee, Jeong Hwan Lee, Hokwon Kim, Ara Cho, Sang Hyun Park, Minseok Kim, Soon-gi Park, Young-Joon Kim, Jeonghun Ha, Jaehyeok Kim, S. Kim, J. S. Lee, Seung No Lee, Yu-Bin Im, C. Byun","doi":"10.1080/15980316.2021.1902405","DOIUrl":"https://doi.org/10.1080/15980316.2021.1902405","url":null,"abstract":"Organic light-emitting diode (OLED) microdisplays have attracted much attention as displays for small form factor augmented reality (AR) devices. To realize glass-like thin and wide field of view (FoV) AR devices, we designed a display module with a high aspect ratio microdisplay and a thin optical component. For the high aspect ratio microdisplay, we developed the color OLED microdisplay with a 32:9 aspect ratio and a 0.8-inch diagonal ∼2,490-ppi CMOS backplane. To express color and reduce optical crosstalk, we fabricated the color filter (C/F) patterning directly on the white OLED. We also developed a pin mirror lens with 11 pin mirrors to improve the optical efficiency and quality with a thin lens. By combining the microdisplay with LetinAR’s pin mirror lens, we successfully demonstrated an AR device with a wide horizontal FoV of 46° but with a small form factor 4 mm lens.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"163 - 171"},"PeriodicalIF":3.7,"publicationDate":"2021-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1902405","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45591610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-03-09DOI: 10.1080/15980316.2021.1896587
JooWon Yang, Yong-Sang Kim, J. Jeon, K. Park
ABSTRACT We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than 10 times as the position of the GB protrusion changes, whereas it varies less than two times if the GB has no protrusion, i.e. has a flat surface. The TCAD analysis showed that the IOFF was mainly caused by band-to-band tunneling and that it increased noticeably when the GB protrusion was located at a certain distance from the highly doped drain region because the GB protrusion intensified the electric field at the drain junction. We also found that the IOFF increases further when the GB line is not perpendicular to the channel direction but has some tilt angle because the GB protrusion necessarily encompassed a critical region that maximized the electric field when it was positioned within the GB protrusion.
{"title":"Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors","authors":"JooWon Yang, Yong-Sang Kim, J. Jeon, K. Park","doi":"10.1080/15980316.2021.1896587","DOIUrl":"https://doi.org/10.1080/15980316.2021.1896587","url":null,"abstract":"ABSTRACT We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than 10 times as the position of the GB protrusion changes, whereas it varies less than two times if the GB has no protrusion, i.e. has a flat surface. The TCAD analysis showed that the IOFF was mainly caused by band-to-band tunneling and that it increased noticeably when the GB protrusion was located at a certain distance from the highly doped drain region because the GB protrusion intensified the electric field at the drain junction. We also found that the IOFF increases further when the GB line is not perpendicular to the channel direction but has some tilt angle because the GB protrusion necessarily encompassed a critical region that maximized the electric field when it was positioned within the GB protrusion.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"153 - 162"},"PeriodicalIF":3.7,"publicationDate":"2021-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1896587","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42198546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：