Pub Date : 2021-11-21DOI: 10.1080/15980316.2021.1999867
Dong-pil Park, W. Park, Jang-kun Song, Sang Soo Kim
ITO thin films must have good electro-optical and mechanical characteristics to use them as integrated touch sensors for flexible OLED displays. We fabricated ITO thin films on a separation-layer-coated glass substrate under various deposition or annealing conditions, and then transferred them to cyclo-olefin polymer films to evaluate their electro-optical and mechanical characteristics. ITO films with a thickness of approximately 136 nm deposited at 250°C showed a sheet resistance of 36 Ω/□, light transmittance of 88%, and 2.4% of elongation at break. The 136 nm thick ITO films deposited at 150 °C and transferred on 50 μm thick COP film survived 500 h of 85 °C, 85% relative humidity under 180-degree bending preservation test, endured at 200,000-time repetitive bending test with a curvature radius of 1.5 mm. These high-performance ITO thin films can be applied to fabricate on-cell touch sensors for foldable OLED displays.
{"title":"High-performance ITO thin films for on-cell touch sensor of foldable OLED displays","authors":"Dong-pil Park, W. Park, Jang-kun Song, Sang Soo Kim","doi":"10.1080/15980316.2021.1999867","DOIUrl":"https://doi.org/10.1080/15980316.2021.1999867","url":null,"abstract":"ITO thin films must have good electro-optical and mechanical characteristics to use them as integrated touch sensors for flexible OLED displays. We fabricated ITO thin films on a separation-layer-coated glass substrate under various deposition or annealing conditions, and then transferred them to cyclo-olefin polymer films to evaluate their electro-optical and mechanical characteristics. ITO films with a thickness of approximately 136 nm deposited at 250°C showed a sheet resistance of 36 Ω/□, light transmittance of 88%, and 2.4% of elongation at break. The 136 nm thick ITO films deposited at 150 °C and transferred on 50 μm thick COP film survived 500 h of 85 °C, 85% relative humidity under 180-degree bending preservation test, endured at 200,000-time repetitive bending test with a curvature radius of 1.5 mm. These high-performance ITO thin films can be applied to fabricate on-cell touch sensors for foldable OLED displays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"77 - 85"},"PeriodicalIF":3.7,"publicationDate":"2021-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41722883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-13DOI: 10.1080/15980316.2021.2000514
Hakjun Lee, K. Hwang, Ki Ju Kim, You Na Song, Young Kwan Kim, Taekyung Kim
In phosphor-sensitized-fluorescent organic light-emitting diodes (PSF-OLEDs), triplet excitons generated in the emitting layer (EML) are harvested by the sensitizer and the excitonic energy is efficiently transferred to the fluorescent dopant molecules. Since a phosphorescent sensitizer is typically doped at around 10 wt.%, the sensitizer not only affects cascade energy transfer but also electrical transporting in the PSF-OLEDs. However, the electrical role of phosphorescent metal complex molecules in the EML is unclear. In this study, we report the impact of the phosphorescent sensitizer on the electrical properties of PSF-OLEDs. Through a comprehensive analysis using impedance spectroscopy in conjunction with current density (J)-voltage (V)-luminance (L) properties of the PSF-OLED, it was revealed that 10 wt.% phosphorescent sensitizer forms an electron transporting pathway inside the EML. Thus, the sensitizer molecules transform a unipolar single host into a bipolar mixed host. In other words, the phosphorescent sensitizer is an n-type host in the PSF-OLEDs. As a result, the charge balance and the operating voltage were simultaneously and significantly improved in the PSF-OLEDs.
{"title":"Effects of the phosphorescent sensitizer on charge dynamics in deep blue phosphor-sensitized-fluorescent organic light-emitting diodes","authors":"Hakjun Lee, K. Hwang, Ki Ju Kim, You Na Song, Young Kwan Kim, Taekyung Kim","doi":"10.1080/15980316.2021.2000514","DOIUrl":"https://doi.org/10.1080/15980316.2021.2000514","url":null,"abstract":"In phosphor-sensitized-fluorescent organic light-emitting diodes (PSF-OLEDs), triplet excitons generated in the emitting layer (EML) are harvested by the sensitizer and the excitonic energy is efficiently transferred to the fluorescent dopant molecules. Since a phosphorescent sensitizer is typically doped at around 10 wt.%, the sensitizer not only affects cascade energy transfer but also electrical transporting in the PSF-OLEDs. However, the electrical role of phosphorescent metal complex molecules in the EML is unclear. In this study, we report the impact of the phosphorescent sensitizer on the electrical properties of PSF-OLEDs. Through a comprehensive analysis using impedance spectroscopy in conjunction with current density (J)-voltage (V)-luminance (L) properties of the PSF-OLED, it was revealed that 10 wt.% phosphorescent sensitizer forms an electron transporting pathway inside the EML. Thus, the sensitizer molecules transform a unipolar single host into a bipolar mixed host. In other words, the phosphorescent sensitizer is an n-type host in the PSF-OLEDs. As a result, the charge balance and the operating voltage were simultaneously and significantly improved in the PSF-OLEDs.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"97 - 103"},"PeriodicalIF":3.7,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44603140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-02DOI: 10.1080/15980316.2021.1990145
Elena Stucchi, Ksenija Maksimovic, L. Bertolacci, F. Viola, A. Athanassiou, M. Caironi
The growing demand of disposable electronics raises serious concerns for the corresponding increase in the amount of electronic waste, with severe environmental impact. Organic and flexible electronics have been proposed long ago as a more sustainable and energy-efficient technological platform with respect to established ones. Yet, such technology is leading to a drastic increase of plastic waste if common approaches for flexible substrates are followed. In this scenario, biodegradable solutions can significantly limit the environmental impact, actively contributing to eliminate the waste streams (plastic or electronic) associated with disposal of devices. However, achieving suitably scalable processes to pattern mechanically robust organic electronics onto largely available biodegradable substrates is still an open challenge. In this work, all-organic and highly flexible field-effect transistors, inkjet printed onto the biodegradable and compostable commercial substrate Mater-Bi, are demonstrated. Because of the thermal instability of Mater-Bi, no annealing steps are applied, producing devices with limited carrier mobility, yet showing correct n-type behavior and robustness to bending and crumpling. The degradation behavior of the final system shows unaltered biodegradability level according to ISO 14851. These results represent a promising step toward sustainable flexible and large-area electronics, combining energy and materials efficient processes with largely available biodegradable substrates.
{"title":"Biodegradable all-polymer field-effect transistors printed on Mater-Bi","authors":"Elena Stucchi, Ksenija Maksimovic, L. Bertolacci, F. Viola, A. Athanassiou, M. Caironi","doi":"10.1080/15980316.2021.1990145","DOIUrl":"https://doi.org/10.1080/15980316.2021.1990145","url":null,"abstract":"The growing demand of disposable electronics raises serious concerns for the corresponding increase in the amount of electronic waste, with severe environmental impact. Organic and flexible electronics have been proposed long ago as a more sustainable and energy-efficient technological platform with respect to established ones. Yet, such technology is leading to a drastic increase of plastic waste if common approaches for flexible substrates are followed. In this scenario, biodegradable solutions can significantly limit the environmental impact, actively contributing to eliminate the waste streams (plastic or electronic) associated with disposal of devices. However, achieving suitably scalable processes to pattern mechanically robust organic electronics onto largely available biodegradable substrates is still an open challenge. In this work, all-organic and highly flexible field-effect transistors, inkjet printed onto the biodegradable and compostable commercial substrate Mater-Bi, are demonstrated. Because of the thermal instability of Mater-Bi, no annealing steps are applied, producing devices with limited carrier mobility, yet showing correct n-type behavior and robustness to bending and crumpling. The degradation behavior of the final system shows unaltered biodegradability level according to ISO 14851. These results represent a promising step toward sustainable flexible and large-area electronics, combining energy and materials efficient processes with largely available biodegradable substrates.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"247 - 256"},"PeriodicalIF":3.7,"publicationDate":"2021-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44038184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-02DOI: 10.1080/15980316.2021.1982782
Xinling Liu, Xiaoming Yang, Weihui Sang, Hai Huang, Wenwu Li, Yen‐Fu Lin, J. Chu
Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
{"title":"Thin-film electronics based on all-2D van der Waals heterostructures","authors":"Xinling Liu, Xiaoming Yang, Weihui Sang, Hai Huang, Wenwu Li, Yen‐Fu Lin, J. Chu","doi":"10.1080/15980316.2021.1982782","DOIUrl":"https://doi.org/10.1080/15980316.2021.1982782","url":null,"abstract":"Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"231 - 245"},"PeriodicalIF":3.7,"publicationDate":"2021-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45861123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-31DOI: 10.1080/15980316.2021.1965048
Hamong Shim, Dong-kil Lee, Jongbok Park, S. Yoon, Hoemin Kim, Kwang-soo Kim, Daerak Heo, Beomjun Kim, Joonku Hahn, Youngmin Kim, W. Jang
We present a light-field display optical system design, state-of-the-art hardware technology, and computational software that are readily scalable (due to their modular structure) and provide naturally immersive and volumetric display systems. We explain the integration of 72 microprojectors into the tabletop display system. In addition, we used 6 workstations for all images and 18 high-performance graphics processing units. Sophisticated image generation through author tooling and the pixel re-arrangement algorithm in the Unity engine enabled us to produce complete three-dimensional images from the radiant rays of two-dimensional pixels using diffuser screens and microlens arrays.
{"title":"Development of a scalable tabletop display using projection-based light field technology","authors":"Hamong Shim, Dong-kil Lee, Jongbok Park, S. Yoon, Hoemin Kim, Kwang-soo Kim, Daerak Heo, Beomjun Kim, Joonku Hahn, Youngmin Kim, W. Jang","doi":"10.1080/15980316.2021.1965048","DOIUrl":"https://doi.org/10.1080/15980316.2021.1965048","url":null,"abstract":"We present a light-field display optical system design, state-of-the-art hardware technology, and computational software that are readily scalable (due to their modular structure) and provide naturally immersive and volumetric display systems. We explain the integration of 72 microprojectors into the tabletop display system. In addition, we used 6 workstations for all images and 18 high-performance graphics processing units. Sophisticated image generation through author tooling and the pixel re-arrangement algorithm in the Unity engine enabled us to produce complete three-dimensional images from the radiant rays of two-dimensional pixels using diffuser screens and microlens arrays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"285 - 292"},"PeriodicalIF":3.7,"publicationDate":"2021-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42990649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-09DOI: 10.1080/15980316.2021.1960648
T. Ishinabe, Hayato Isa, Y. Shibata, H. Fujikake
We propose junction-type, vertically aligned polymer network liquid crystals using plastic substrates for flexible smart windows, in which the spacers are formed with the imprinting method and are bonded to the substrate surface by UV-curable reactive mesogen (RM). We clarified that the optical property can be improved by suppressing the aggregation of RMs around the spacers through thinning of the coating of the RM and the simultaneous improvement of the wettability of the parallel alignment film. We achieved excellent haze properties of 3.0% with voltage off and 92.7% with voltage on, and high curvature performance with a small curvature radius of 9.0 mm.
{"title":"Flexible polymer network liquid crystals using imprinted spacers bonded by UV-curable reactive mesogen for smart window applications","authors":"T. Ishinabe, Hayato Isa, Y. Shibata, H. Fujikake","doi":"10.1080/15980316.2021.1960648","DOIUrl":"https://doi.org/10.1080/15980316.2021.1960648","url":null,"abstract":"We propose junction-type, vertically aligned polymer network liquid crystals using plastic substrates for flexible smart windows, in which the spacers are formed with the imprinting method and are bonded to the substrate surface by UV-curable reactive mesogen (RM). We clarified that the optical property can be improved by suppressing the aggregation of RMs around the spacers through thinning of the coating of the RM and the simultaneous improvement of the wettability of the parallel alignment film. We achieved excellent haze properties of 3.0% with voltage off and 92.7% with voltage on, and high curvature performance with a small curvature radius of 9.0 mm.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"69 - 75"},"PeriodicalIF":3.7,"publicationDate":"2021-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46237982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-04DOI: 10.1080/15980316.2021.1959429
Jaipal Devesing Girase, Sandhya Rani Nayak, Jairam Tagare, Shahnawaz, Mangey Ram Nagar, J. Jou, S. Vaidyanathan
Developing solution-processable deep-blue emitters for organic light-emitting diodes (OLEDs) is still a challenging task. In this context, two new solution-processable deep-blue emitters, N, N-diphenyl-4’-(1-(3-(trifluoromethyl)phenyl)-1H-phenanthro[9,10-d]imidazol-2-yl)-[1,1’-biphenyl]-4-amine(4-PIMCFTPA) and 4’-(4,5-diphenyl-1-(3-(trifluoromethyl)phenyl)-1H-imidazol-2-yl)-N,N-diphenyl-[1,1’-biphenyl]-4-amine (4-BICFTPA), were successfully designed and synthesized by incorporating phenanthroimidazole (PI)/diphenylimidazole (BI)-triphenylamine (TPA), which is functional at the N1 position of the imidazole, with Ph-mCF3. The thermal, photophysical, and electrochemical properties of both fluorophores were systematically explored. These fluorophores showed a deep-blue emission in the solution as well as in the solid state. The highest occupied molecular orbital (HOMO) – lowest unoccupied molecular orbital (LUMO) energy level of the fluorophores was calculated using electrochemical studies and compared with the theoretical calculation [the density functional theory (DFT)]. The asymmetrically twisted conformation of 4-PIMCFTPA between PI-TPA efficiently showed a high photoluminescence quantum yield. OLED (undoped and doped) devices were fabricated with the newly synthesized emitters, and 4-PIMCFTPA demonstrated better electroluminescence (EL) performance than the BI-based emitter. Thus, the OLED based on 4-PIMCFTPA (1 wt% in the CBP host) had the best EL performance, with a maximum external quantum efficiency 1.7% and CIE coordinates of (0.17, 0.06).
{"title":"Solution-processed deep-blue (y∼0.06) fluorophores based on triphenylamine-imidazole (donor-acceptor) for OLEDs: computational and experimental exploration","authors":"Jaipal Devesing Girase, Sandhya Rani Nayak, Jairam Tagare, Shahnawaz, Mangey Ram Nagar, J. Jou, S. Vaidyanathan","doi":"10.1080/15980316.2021.1959429","DOIUrl":"https://doi.org/10.1080/15980316.2021.1959429","url":null,"abstract":"Developing solution-processable deep-blue emitters for organic light-emitting diodes (OLEDs) is still a challenging task. In this context, two new solution-processable deep-blue emitters, N, N-diphenyl-4’-(1-(3-(trifluoromethyl)phenyl)-1H-phenanthro[9,10-d]imidazol-2-yl)-[1,1’-biphenyl]-4-amine(4-PIMCFTPA) and 4’-(4,5-diphenyl-1-(3-(trifluoromethyl)phenyl)-1H-imidazol-2-yl)-N,N-diphenyl-[1,1’-biphenyl]-4-amine (4-BICFTPA), were successfully designed and synthesized by incorporating phenanthroimidazole (PI)/diphenylimidazole (BI)-triphenylamine (TPA), which is functional at the N1 position of the imidazole, with Ph-mCF3. The thermal, photophysical, and electrochemical properties of both fluorophores were systematically explored. These fluorophores showed a deep-blue emission in the solution as well as in the solid state. The highest occupied molecular orbital (HOMO) – lowest unoccupied molecular orbital (LUMO) energy level of the fluorophores was calculated using electrochemical studies and compared with the theoretical calculation [the density functional theory (DFT)]. The asymmetrically twisted conformation of 4-PIMCFTPA between PI-TPA efficiently showed a high photoluminescence quantum yield. OLED (undoped and doped) devices were fabricated with the newly synthesized emitters, and 4-PIMCFTPA demonstrated better electroluminescence (EL) performance than the BI-based emitter. Thus, the OLED based on 4-PIMCFTPA (1 wt% in the CBP host) had the best EL performance, with a maximum external quantum efficiency 1.7% and CIE coordinates of (0.17, 0.06).","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"53 - 67"},"PeriodicalIF":3.7,"publicationDate":"2021-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1959429","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47700763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-29DOI: 10.1080/15980316.2021.1957725
Huihui Zhu, A. Liu, Yong‐Young Noh
Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.
{"title":"Recent progress on metal halide perovskite field-effect transistors","authors":"Huihui Zhu, A. Liu, Yong‐Young Noh","doi":"10.1080/15980316.2021.1957725","DOIUrl":"https://doi.org/10.1080/15980316.2021.1957725","url":null,"abstract":"Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"257 - 268"},"PeriodicalIF":3.7,"publicationDate":"2021-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46630209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1080/15980316.2021.1957032
Kevin Schnittker, M. Tursunniyaz, J. Andrews
Active-matrices serve as the backplane circuitry for large-area display technologies and distributed sensors. Recently, there has been significant interest in developing flexible, additively manufactured active matrices for the burgeoning flexible electronics industry. Carbon nanotubes (CNTs) are prime candidate materials for semiconducting elements of transistors due to their solution processability, carrier mobility, and mechanical flexibility. There have been many recent accomplishments in the development of CNT inks and in their deposition via printing that enable their use in thin-film transistors (TFTs), and their appropriate performance make them suitable for use in large-area active matrices. In this review, we provide an overview of the field, with a specific focus on recent advancements in CNT sorting, ink preparation, and printing techniques. We also provide a benchmarking study of printed CNT devices presented in literature after 2017. Next, we discuss printable CNT-TFTs used for active-matrix applications. Finally, we provide a concluding perspective on the outlook and challenges for printed CNT-TFT active matrices.
{"title":"Recent advances in printable carbon nanotube transistors for large-area active matrices","authors":"Kevin Schnittker, M. Tursunniyaz, J. Andrews","doi":"10.1080/15980316.2021.1957032","DOIUrl":"https://doi.org/10.1080/15980316.2021.1957032","url":null,"abstract":"Active-matrices serve as the backplane circuitry for large-area display technologies and distributed sensors. Recently, there has been significant interest in developing flexible, additively manufactured active matrices for the burgeoning flexible electronics industry. Carbon nanotubes (CNTs) are prime candidate materials for semiconducting elements of transistors due to their solution processability, carrier mobility, and mechanical flexibility. There have been many recent accomplishments in the development of CNT inks and in their deposition via printing that enable their use in thin-film transistors (TFTs), and their appropriate performance make them suitable for use in large-area active matrices. In this review, we provide an overview of the field, with a specific focus on recent advancements in CNT sorting, ink preparation, and printing techniques. We also provide a benchmarking study of printed CNT devices presented in literature after 2017. Next, we discuss printable CNT-TFTs used for active-matrix applications. Finally, we provide a concluding perspective on the outlook and challenges for printed CNT-TFT active matrices.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"193 - 209"},"PeriodicalIF":3.7,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1957032","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46157004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-13DOI: 10.1080/15980316.2021.1950854
Minhyuk Kim
This paper considers the effects on the human body of the flicker of organic light-emitting diode (OLED) displays. Related studies have been conducted due to reports of cases of adverse health effects of the use of artificial lighting. Interest in this problem recently intensified with the development of various new displays and the longer exposure time of people to them. Therefore, the previous studies on the effects of artificial lighting on the human body are described in this paper, and based on them, the dimming technique for liquid-crystal displays and OLED displays of smartphones is explained and the effect of the flicker of OLED displays on the human body is assessed.
{"title":"Assessment of the effect on the human body of the flicker of OLED displays of smartphones","authors":"Minhyuk Kim","doi":"10.1080/15980316.2021.1950854","DOIUrl":"https://doi.org/10.1080/15980316.2021.1950854","url":null,"abstract":"This paper considers the effects on the human body of the flicker of organic light-emitting diode (OLED) displays. Related studies have been conducted due to reports of cases of adverse health effects of the use of artificial lighting. Interest in this problem recently intensified with the development of various new displays and the longer exposure time of people to them. Therefore, the previous studies on the effects of artificial lighting on the human body are described in this paper, and based on them, the dimming technique for liquid-crystal displays and OLED displays of smartphones is explained and the effect of the flicker of OLED displays on the human body is assessed.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"269 - 274"},"PeriodicalIF":3.7,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41692541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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