Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01011
A. Khaldi, Y. Benallou, M. Zemouli, K. Amara, M. E. Keurti
In this paper, the full potential linearized augmented plane wave method implemented in the WIEN2K code with first principles-based density functional theory are used to investigate the structural, elastic, electronic and thermoelectric properties of TaCoSn, TaIrSn and TaRhSn. The structural and elastic constants are calculated using the generalized gradient potential developed by Perdew-Burke-Ernzerhof (GGA-PBEsol). The electronic structures are performed by means of GGA-PBEsol and improved by TranBlaha modified Becke-Johnson (TB-mBJ) potential. Our results show that the studied compounds are semiconductors with indirect gaps. On the other hand, we investigated the thermoelectric properties at different temperatures with respect to the chemical potential. The results show that the thermopower factors are more important for p-type doping than those for n-type doping and the maximum value of these factors indicates the optimal hole-doping level which gives rise to high thermoelectric performances of these materials. Finally, we note that the best thermopower values are found for the TaRhSn compound with optimal doping levels of (75.76, 175.60 and 238.92) 1014 W cm – 1 K – 2 s – 1 at temperatures of 300, 600, and 900 K, respectively.
本文采用基于第一性原理的密度泛函理论，在WIEN2K代码中实现了全势线性化增广平面波方法，研究了TaCoSn、TaIrSn和TaRhSn的结构、弹性、电子和热电性能。利用Perdew-Burke-Ernzerhof (GGA-PBEsol)提出的广义梯度势计算结构常数和弹性常数。通过GGA-PBEsol和TranBlaha修饰的Becke-Johnson (TB-mBJ)电位对电子结构进行了修饰。我们的结果表明，所研究的化合物是具有间接间隙的半导体。另一方面，我们研究了不同温度下的热电性质与化学势的关系。结果表明，与n型掺杂相比，p型掺杂的热电性能因素更为重要，这些因素的最大值表示最佳空穴掺杂水平，从而使材料具有较高的热电性能。最后，我们发现在300、600和900 K的温度下，TaRhSn化合物的最佳热功率值分别为(75.76、175.60和238.92)1014W cm - 1 K - 2 s - 1。
{"title":"First Principle Study and Optimal Doping for High Thermoelectric Performance of TaXSn Materials (X = Co, Ir and Rh)","authors":"A. Khaldi, Y. Benallou, M. Zemouli, K. Amara, M. E. Keurti","doi":"10.21272/JNEP.13(1).01011","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01011","url":null,"abstract":"In this paper, the full potential linearized augmented plane wave method implemented in the WIEN2K code with first principles-based density functional theory are used to investigate the structural, elastic, electronic and thermoelectric properties of TaCoSn, TaIrSn and TaRhSn. The structural and elastic constants are calculated using the generalized gradient potential developed by Perdew-Burke-Ernzerhof (GGA-PBEsol). The electronic structures are performed by means of GGA-PBEsol and improved by TranBlaha modified Becke-Johnson (TB-mBJ) potential. Our results show that the studied compounds are semiconductors with indirect gaps. On the other hand, we investigated the thermoelectric properties at different temperatures with respect to the chemical potential. The results show that the thermopower factors are more important for p-type doping than those for n-type doping and the maximum value of these factors indicates the optimal hole-doping level which gives rise to high thermoelectric performances of these materials. Finally, we note that the best thermopower values are found for the TaRhSn compound with optimal doping levels of (75.76, 175.60 and 238.92) 1014 W cm – 1 K – 2 s – 1 at temperatures of 300, 600, and 900 K, respectively.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"25 1","pages":"01011-1-01011-7"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76729950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01001
I. Myronyuk, V. Kotsyubynsky, V. Boychuk, I. Mykytyn, V. Gun'ko
The synthesis of Sn-doped titania nanoparticles (Sn content of 0, 3, 6, and 12 at. %) was carried out using solgel chemical route based on the common acid hydrolysis of titanium and tin tetrachlorides. Phase composition, morphology, particle size, pore size distribution and photocatalytic performance of obtained materials were systematically studied by various analytical techniques (XRD, HR-TEM, low-temperature nitrogen adsorption porosimetry, UV-Vis spectroscopy). An increase in the Sn dopant concentration causes a gradual decrease in the relative content of the anatase phase from 100 mol. % for undoped titania to about 3 mol. % for material with maximal doping concentration. Materials with a Sn atomic content of 3 and 6 at. % have the maximum values of the specific surface area (about 280-290 m2/g) that corresponds to the smallest (approximately 2.5 nm) anatase crystallite. The photocatalytic activity of the synthesized Sn-doped TiO2 nanoparticles was analyzed by the method of methylene blue dye photodegradation in an aqueous solution under UV irradiation. The highest reaction rate constant and maximal methylene blue dye adsorption capacity were obtained for 3 at. % Sn-doped titania with the mixed anatase/rutile composition. The indirect optical transitions are characteristic for all synthesized materials. A decrease in the bandgap energy values with increasing Sn content from 3.21 eV for pure anatase to 2.82 eV for titania doped with 12 at. % of the Sn was observed. The growth in photocatalytic activity for the mixed-phase sample can be considered as a result of the increasing number of surface active centers due to the anatase-rutile phase transition.
{"title":"Photocatalytic Properties of Sn-doped TiO2","authors":"I. Myronyuk, V. Kotsyubynsky, V. Boychuk, I. Mykytyn, V. Gun'ko","doi":"10.21272/JNEP.13(1).01001","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01001","url":null,"abstract":"The synthesis of Sn-doped titania nanoparticles (Sn content of 0, 3, 6, and 12 at. %) was carried out using solgel chemical route based on the common acid hydrolysis of titanium and tin tetrachlorides. Phase composition, morphology, particle size, pore size distribution and photocatalytic performance of obtained materials were systematically studied by various analytical techniques (XRD, HR-TEM, low-temperature nitrogen adsorption porosimetry, UV-Vis spectroscopy). An increase in the Sn dopant concentration causes a gradual decrease in the relative content of the anatase phase from 100 mol. % for undoped titania to about 3 mol. % for material with maximal doping concentration. Materials with a Sn atomic content of 3 and 6 at. % have the maximum values of the specific surface area (about 280-290 m2/g) that corresponds to the smallest (approximately 2.5 nm) anatase crystallite. The photocatalytic activity of the synthesized Sn-doped TiO2 nanoparticles was analyzed by the method of methylene blue dye photodegradation in an aqueous solution under UV irradiation. The highest reaction rate constant and maximal methylene blue dye adsorption capacity were obtained for 3 at. % Sn-doped titania with the mixed anatase/rutile composition. The indirect optical transitions are characteristic for all synthesized materials. A decrease in the bandgap energy values with increasing Sn content from 3.21 eV for pure anatase to 2.82 eV for titania doped with 12 at. % of the Sn was observed. The growth in photocatalytic activity for the mixed-phase sample can be considered as a result of the increasing number of surface active centers due to the anatase-rutile phase transition.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"16 1","pages":"01001-1-01001-5"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88456409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01006
P. Samanta, T. Kamilya
Wet chemical method is a simple and cost-effective way to synthesize nanoparticles of high yield and mass production compared to other conventional methods. Besides, it does not require the maintenance of rigorous experimental conditions like high temperature, low pressure or flow of carrier gases. We have followed a simple wet chemical method to synthesize pure and Cu doped ZnO nanoparticles. Absorption spectroscopic study yields the absorption behavior of a material over a wide range of the electromagnetic spectrum. Absorption study of the synthesized undoped ZnO and Cu/ZnO reveals that doping with Cu decreases the absorption coefficient. It clearly indicates that the scattering of photons by phonons reduces due to Cu doping. The Urbach energy is an important parameter to understand the degree of disorder of phonon states in a material. It also enables us to study the dependence of the absorption coefficient on the wave-length of incident photons of energies lower than the band gap energy. For pure ZnO, the Urbach energy was calculated to be 0.511 eV and decreased to 0.483 eV upon doping with Cu in ZnO. The extinction coefficient was also calculated to understand the optical absorption process in the material.
{"title":"Environment-Friendly Synthesis of Undoped and Cu doped ZnO Nanoparticles and Study of their Optical Absorption Properties towards Biological Applications","authors":"P. Samanta, T. Kamilya","doi":"10.21272/JNEP.13(1).01006","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01006","url":null,"abstract":"Wet chemical method is a simple and cost-effective way to synthesize nanoparticles of high yield and mass production compared to other conventional methods. Besides, it does not require the maintenance of rigorous experimental conditions like high temperature, low pressure or flow of carrier gases. We have followed a simple wet chemical method to synthesize pure and Cu doped ZnO nanoparticles. Absorption spectroscopic study yields the absorption behavior of a material over a wide range of the electromagnetic spectrum. Absorption study of the synthesized undoped ZnO and Cu/ZnO reveals that doping with Cu decreases the absorption coefficient. It clearly indicates that the scattering of photons by phonons reduces due to Cu doping. The Urbach energy is an important parameter to understand the degree of disorder of phonon states in a material. It also enables us to study the dependence of the absorption coefficient on the wave-length of incident photons of energies lower than the band gap energy. For pure ZnO, the Urbach energy was calculated to be 0.511 eV and decreased to 0.483 eV upon doping with Cu in ZnO. The extinction coefficient was also calculated to understand the optical absorption process in the material.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88845112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01031
S. Rai, R. Bhujel, Amrita Gupta, B. Swain, J. Biswas
Mixed vanadium (IV and V) oxides/reduced graphene oxide (VO2/rGO and V2O5/rGO) composite was synthesized by a green method. The green method prevents the use of hazardous chemicals, viz., hydrazine hydrate, which is commonly utilized for reducing the oxygen functionalities of graphene oxide (GO). The reduction of GO and incorporation of VO2 and V2O5 were performed simultaneously in a single concerted step using Centella asiatica extract. The composite was then characterized using UV-visible spectroscopy, X-ray Diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). This work shows the potential of Centella asiatica extract as a reducing agent.
{"title":"In-situ Synthesis of Mixed Vanadium (IV and V) Oxides/Reduced Graphene Oxide Using Centella asiatica Extract","authors":"S. Rai, R. Bhujel, Amrita Gupta, B. Swain, J. Biswas","doi":"10.21272/JNEP.13(1).01031","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01031","url":null,"abstract":"Mixed vanadium (IV and V) oxides/reduced graphene oxide (VO2/rGO and V2O5/rGO) composite was synthesized by a green method. The green method prevents the use of hazardous chemicals, viz., hydrazine hydrate, which is commonly utilized for reducing the oxygen functionalities of graphene oxide (GO). The reduction of GO and incorporation of VO2 and V2O5 were performed simultaneously in a single concerted step using Centella asiatica extract. The composite was then characterized using UV-visible spectroscopy, X-ray Diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). This work shows the potential of Centella asiatica extract as a reducing agent.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"37 1","pages":"01031-1-01031-3"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89221558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01024
P. H. Krishna, D. Jagwani, M. Ramrakhiani
The outcome of particle size effect on Photoluminescence has been investigated theoretically for CdS, ZnS, CdSe and ZnSe quantum dots. The theory is based on computational modeling in the strong confinement region only where the particle size is less than Bohr’s radius. The Photoluminescence emission line shape function which depends on band gap was found to be strongly dependent on particle size. The PL spectra of bulk material is similar for the quantum dots where similar vibronic coupling and normalized intensity is considered, only the peak wavelength changes and thus shifts the band edge luminescence peak to higher energies for the quantum dots corresponding to their band gap with no broadening. The PL spectra of monodisperse dots revels the fact that the shape of the emission peak is same, only it shift towards higher energy or smaller wavelength for decreasing size of quantum dots.
{"title":"Theoretical Study of Photo-Luminescence Emission Using the Line Shape Function for Semiconductor Quantum Dots","authors":"P. H. Krishna, D. Jagwani, M. Ramrakhiani","doi":"10.21272/JNEP.13(1).01024","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01024","url":null,"abstract":"The outcome of particle size effect on Photoluminescence has been investigated theoretically for CdS, ZnS, CdSe and ZnSe quantum dots. The theory is based on computational modeling in the strong confinement region only where the particle size is less than Bohr’s radius. The Photoluminescence emission line shape function which depends on band gap was found to be strongly dependent on particle size. The PL spectra of bulk material is similar for the quantum dots where similar vibronic coupling and normalized intensity is considered, only the peak wavelength changes and thus shifts the band edge luminescence peak to higher energies for the quantum dots corresponding to their band gap with no broadening. The PL spectra of monodisperse dots revels the fact that the shape of the emission peak is same, only it shift towards higher energy or smaller wavelength for decreasing size of quantum dots.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"43 1","pages":"01024-1-01024-4"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75906435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01008
A. Benamrani, S. Daoud, P. K. Saini
1 Département des Sciences et Techniques, Faculté des Sciences et de la Technologie, Université Mohamed Elbachir El Ibrahimi de Bordj Bou Arreridj, Bordj Bou Arreridj, 34000, Algérie 2 Laboratoire Matériaux et Systèmes Electroniques, Faculté des Sciences et de la Technologie, Université Mohamed Elbachir El Ibrahimi de Bordj Bou Arreridj, Bordj Bou Arreridj, 34000, Algérie 3 Department of Physics, Government College, Hansi, Haryana, 125033, India
1部、科学和技术大学理学院和技术支持法治的Mohamed El Ibrahimi Elbachir Bou Arreridj、法治和Bou Arreridj 34000、阿尔及利亚2材料和电子系统实验室,大学理学院和技术支持法治的Mohamed El Ibrahimi Elbachir Bou Arreridj、法治和Bou Arreridj 34000阿尔及利亚3系、物理,125033 Hansi、哈里亚纳邦,印度政府学院
{"title":"Structural, Elastic and Thermodynamic Properties of ScP Compound: DFT Study","authors":"A. Benamrani, S. Daoud, P. K. Saini","doi":"10.21272/JNEP.13(1).01008","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01008","url":null,"abstract":"1 Département des Sciences et Techniques, Faculté des Sciences et de la Technologie, Université Mohamed Elbachir El Ibrahimi de Bordj Bou Arreridj, Bordj Bou Arreridj, 34000, Algérie 2 Laboratoire Matériaux et Systèmes Electroniques, Faculté des Sciences et de la Technologie, Université Mohamed Elbachir El Ibrahimi de Bordj Bou Arreridj, Bordj Bou Arreridj, 34000, Algérie 3 Department of Physics, Government College, Hansi, Haryana, 125033, India","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"1 1","pages":"01008-1-01008-5"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87577153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01002
A. V. Bezougly, O. Petchenko, G. Petchenko
{"title":"Photon Flux Density in the Diffraction Pattern During Scattering of H-polarized Photons by the Infinite Grating of Metallic Strips","authors":"A. V. Bezougly, O. Petchenko, G. Petchenko","doi":"10.21272/JNEP.13(1).01002","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01002","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"3 1","pages":"01002-1-01002-4"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88893524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01009
Slimane Chala, R. Boumaraf, A. Bouhdjar, M. Bdirina, M. Labed, T. E. Taouririt, M. Elbar, N. Sengouga, F. Yakuphanoglu, S. Rahmane, Y. Naoui, Y. Benbouzid
1 Laboratory of Metallic and Semiconducting Materials, Mohamed Khider University, 07000 Biskra, Algeria 2 Institute of Electrical and Electronic Engineering, M'Hamed Bougara University, 35000 Boumerdes, Algeria 3 Laboratory of Physics of Thin Films and Applications, Mohamed Khider University, 07000 Biskra, Algeria 4 Graduate School of Food Sciences and Food Industries, 16200 Algiers, Algeria 5 Physics Department, Firat University, 23169 Elazig, Turkey 6 Physics Department, Constantine 1 University, 25017 Constantine, Algeria 7 Physics Department, Ziane Achour University, 17000 Djelfa, Algeria
{"title":"Synthesis and Characterization of ZnO Thin Film for Modeling the Effect of Its Defects on ZnO/Cu2O Solar Cell EQE","authors":"Slimane Chala, R. Boumaraf, A. Bouhdjar, M. Bdirina, M. Labed, T. E. Taouririt, M. Elbar, N. Sengouga, F. Yakuphanoglu, S. Rahmane, Y. Naoui, Y. Benbouzid","doi":"10.21272/JNEP.13(1).01009","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01009","url":null,"abstract":"1 Laboratory of Metallic and Semiconducting Materials, Mohamed Khider University, 07000 Biskra, Algeria 2 Institute of Electrical and Electronic Engineering, M'Hamed Bougara University, 35000 Boumerdes, Algeria 3 Laboratory of Physics of Thin Films and Applications, Mohamed Khider University, 07000 Biskra, Algeria 4 Graduate School of Food Sciences and Food Industries, 16200 Algiers, Algeria 5 Physics Department, Firat University, 23169 Elazig, Turkey 6 Physics Department, Constantine 1 University, 25017 Constantine, Algeria 7 Physics Department, Ziane Achour University, 17000 Djelfa, Algeria","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"80 1","pages":"01009-1-01009-6"},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83962442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01004
A. Mali, A. Gaikwad, S. Borse, R. R. Ahire
II-VI semiconductor based ternary CdMnS compound material has received more attention due to its wide area of applications in semiconductor technology. Cd 1 – x Mn x S ( x 0, 0.2, 0.4, 0.6, 0.8 and 1.0) thin films were successfully prepared by chemical bath deposition technique on non-conducting glass substrates. Thin films were deposited at a bath temperature of 80 C and pH 11 by using the chemical bath reaction of cadmium chloride (CdCl 2 ) and manganese chloride (MnCl 2 ) with thiourea (NH 4 ) 2 S in an aqueous solution. Further, the prepared samples were characterized by UV-visible spectroscopy, photoluminescence, XRD, SEM and EDAX to study the optical, structural, surface, and chemical properties. Effect of Mn 2+ ions on the film thickness of Cd 1 – x Mn x S films was investigated using weight difference technique. The film thickness of Cd 1 – x Mn x S films decreases as Mn 2+ ions increase in the bath solution. The polycrystalline nature with hexagonal and cubic structures of the as-deposited films was confirmed by XRD. The band gap value of the deposited films was observed to increase with increasing Mn 2+ ion concentration, this might be ascribed to the fact that Cd atom was substituted by Mn atom in the CdS structure. EDAX analysis confirmed the deposition of Cd, Mn and S elements in the films. Photoluminescence spectra of Cd 1 – x Mn x S with different values of the composition parameter x exhibited two emission peaks with different intensities. The measurement of the electrical resistivity of Cd 1 – x Mn x S films was performed at room temperature using two probe methods. The variation in electrical resistivity values with compositional parameters was discussed based on deposition parameters. The investigated polycrystalline Cd 1 – x Mn x S thin films show promising technological applications in semiconductor industry.
II-VI半导体基三元CdMnS复合材料因其在半导体技术中的广泛应用而受到越来越多的关注。采用化学浴沉积技术在非导电玻璃衬底上成功制备了Cd 1 - x Mn x S (x0,0.2,0.4,0.6,0.8和1.0)薄膜。采用氯化镉(CdCl 2)和氯化锰(MnCl 2)与硫脲(nh4) 2s在水溶液中进行化学浴反应，在温度为80℃，pH为11的条件下沉积薄膜。通过紫外可见光谱、光致发光、XRD、SEM和EDAX等手段对制备的样品进行表征，研究其光学、结构、表面和化学性质。采用质量差法研究了Mn +离子对cd1 - x Mn x S薄膜厚度的影响。随着溶液中Mn +离子的增加，Cd - x Mn x S薄膜的膜厚减小。通过x射线衍射(XRD)证实了沉积膜具有六方和立方结构的多晶性质。薄膜的带隙值随着Mn +浓度的增加而增大，这可能是由于Cd结构中的Cd原子被Mn原子取代所致。EDAX分析证实薄膜中有Cd、Mn和S元素的沉积。不同组成参数x值的Cd - x Mn x S的光致发光光谱呈现出两个不同强度的发射峰。采用两种探针法在室温下测量了cd1 - x Mn x S薄膜的电阻率。以沉积参数为基础，讨论了电阻率值随组成参数的变化规律。所研究的多晶cd1 - x Mn x S薄膜在半导体工业中具有广阔的应用前景。
{"title":"Influence of Mn2+ Magnetic Ions on the Properties of Cd1 – xMnxS Thin Films Synthesized by Chemical Bath Deposition","authors":"A. Mali, A. Gaikwad, S. Borse, R. R. Ahire","doi":"10.21272/JNEP.13(1).01004","DOIUrl":"https://doi.org/10.21272/JNEP.13(1).01004","url":null,"abstract":"II-VI semiconductor based ternary CdMnS compound material has received more attention due to its wide area of applications in semiconductor technology. Cd 1 – x Mn x S ( x 0, 0.2, 0.4, 0.6, 0.8 and 1.0) thin films were successfully prepared by chemical bath deposition technique on non-conducting glass substrates. Thin films were deposited at a bath temperature of 80 C and pH 11 by using the chemical bath reaction of cadmium chloride (CdCl 2 ) and manganese chloride (MnCl 2 ) with thiourea (NH 4 ) 2 S in an aqueous solution. Further, the prepared samples were characterized by UV-visible spectroscopy, photoluminescence, XRD, SEM and EDAX to study the optical, structural, surface, and chemical properties. Effect of Mn 2+ ions on the film thickness of Cd 1 – x Mn x S films was investigated using weight difference technique. The film thickness of Cd 1 – x Mn x S films decreases as Mn 2+ ions increase in the bath solution. The polycrystalline nature with hexagonal and cubic structures of the as-deposited films was confirmed by XRD. The band gap value of the deposited films was observed to increase with increasing Mn 2+ ion concentration, this might be ascribed to the fact that Cd atom was substituted by Mn atom in the CdS structure. EDAX analysis confirmed the deposition of Cd, Mn and S elements in the films. Photoluminescence spectra of Cd 1 – x Mn x S with different values of the composition parameter x exhibited two emission peaks with different intensities. The measurement of the electrical resistivity of Cd 1 – x Mn x S films was performed at room temperature using two probe methods. The variation in electrical resistivity values with compositional parameters was discussed based on deposition parameters. The investigated polycrystalline Cd 1 – x Mn x S thin films show promising technological applications in semiconductor industry.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89000791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-01DOI: 10.21272/JNEP.13(1).01012
І. P. Buryk, L. Odnodvorets, Ya.V. Khyzhnya
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