Pub Date : 2020-01-01DOI: 10.21272/jnep.12(6).06010
A. Chaabane
A novel wideband partially reflective surface (PRS) for printed antennas gain enhancement is proposed in this paper. The proposed PRS is constructed by two layers separated by an air-gap. It is composed by an inductive patch with a star flower-shaped aperture etched on the bottom faces of its two layers and a capacitive star flower-shaped patch that is placed on the top face of its upper layer. The presented PRS with a broadband operation extending from 7.76 GHz to 11.16 GHz is proposed to improve the gain of printed antennas operating around this band. The usefulness of the proposed PRS is examined by placing an array of 8 9 over a single-layer printed feeding antenna (FA). The gain of the considered FA is considerably enhanced after the implementation of the PRS. Hence, the usefulness of the designed PRS is demonstrated for enhancing the gain of printed antennas operating in X-band.
{"title":"A Novel Wideband Partially Reflective Surface for Antenna Gain Enhancement","authors":"A. Chaabane","doi":"10.21272/jnep.12(6).06010","DOIUrl":"https://doi.org/10.21272/jnep.12(6).06010","url":null,"abstract":"A novel wideband partially reflective surface (PRS) for printed antennas gain enhancement is proposed in this paper. The proposed PRS is constructed by two layers separated by an air-gap. It is composed by an inductive patch with a star flower-shaped aperture etched on the bottom faces of its two layers and a capacitive star flower-shaped patch that is placed on the top face of its upper layer. The presented PRS with a broadband operation extending from 7.76 GHz to 11.16 GHz is proposed to improve the gain of printed antennas operating around this band. The usefulness of the proposed PRS is examined by placing an array of 8 9 over a single-layer printed feeding antenna (FA). The gain of the considered FA is considerably enhanced after the implementation of the PRS. Hence, the usefulness of the designed PRS is demonstrated for enhancing the gain of printed antennas operating in X-band.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83634108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(4).04011
S. Malykhin, V. Kondratenko, I. Kopylets, S. Surovitskiy, I. Shipkova, I. Mikhailov, E. N. Zubarev, Yu. S. Bogdanov, Kyrpychova St. Kharkiv Ukraine
Using the methods of X-ray diffraction, transmission and scanning microscopy, the features of the initial stage of the formation of the quasicrystalline phase in thin films of Ti-Zr-Ni are studied. The films were obtained by magnetron sputtering of a target of the composition Ti41Zr38.3Ni20.7 (at. %) with deposition on substrates at T 300 K and further vacuum annealing. It was established that immediately after deposition, the films are X-ray amorphous, nanostructured. An analysis of the radial distribution functions shows that immediately after deposition, the structural state of a disordered cluster, which is topologically close to icosahedral, prevails in the near atomic medium. It is concluded that the atoms are not arranged randomly, but form a “transitional” structure with an imperfect order like three shells of the Bergman cluster stacking using icosahedrons and dodecahedrons. Such a structure is a “prepared” nucleus for the further formation of the icosahedral phase upon heating. An analysis of the annealing results suggests that the qualitative nature of the transition from the pseudo-amorphous to the quasicrystalline phase and the scale of the transformations are determined by the annealing time and temperature, as well as by the film thickness. The smaller the thickness, the more the annealing processes are inhibited. It was shown that by annealing the films of a thickness of 6 μm or more at 500 C for more than 28 h, single-phase quasicrystalline coatings with a quasicrystallinity parameter aq of about 0.5245 nm can be obtained.
{"title":"Features of the Initial Stage of the Formation of Ti-Zr-Ni Quasicrystalline Thin Films","authors":"S. Malykhin, V. Kondratenko, I. Kopylets, S. Surovitskiy, I. Shipkova, I. Mikhailov, E. N. Zubarev, Yu. S. Bogdanov, Kyrpychova St. Kharkiv Ukraine","doi":"10.21272/jnep.12(4).04011","DOIUrl":"https://doi.org/10.21272/jnep.12(4).04011","url":null,"abstract":"Using the methods of X-ray diffraction, transmission and scanning microscopy, the features of the initial stage of the formation of the quasicrystalline phase in thin films of Ti-Zr-Ni are studied. The films were obtained by magnetron sputtering of a target of the composition Ti41Zr38.3Ni20.7 (at. %) with deposition on substrates at T 300 K and further vacuum annealing. It was established that immediately after deposition, the films are X-ray amorphous, nanostructured. An analysis of the radial distribution functions shows that immediately after deposition, the structural state of a disordered cluster, which is topologically close to icosahedral, prevails in the near atomic medium. It is concluded that the atoms are not arranged randomly, but form a “transitional” structure with an imperfect order like three shells of the Bergman cluster stacking using icosahedrons and dodecahedrons. Such a structure is a “prepared” nucleus for the further formation of the icosahedral phase upon heating. An analysis of the annealing results suggests that the qualitative nature of the transition from the pseudo-amorphous to the quasicrystalline phase and the scale of the transformations are determined by the annealing time and temperature, as well as by the film thickness. The smaller the thickness, the more the annealing processes are inhibited. It was shown that by annealing the films of a thickness of 6 μm or more at 500 C for more than 28 h, single-phase quasicrystalline coatings with a quasicrystallinity parameter aq of about 0.5245 nm can be obtained.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"7 1","pages":"04011-1-04011-6"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89862753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(3).03038
N. Kharchenko, A. I. Dehula, V. G. Hignjak, Т. Hоvоrun, I. Smokovych
{"title":"Calculation of Physicochemical Conditions of the Formation of Protective Coatings Based on Carbides and Nitrides of Chromium","authors":"N. Kharchenko, A. I. Dehula, V. G. Hignjak, Т. Hоvоrun, I. Smokovych","doi":"10.21272/jnep.12(3).03038","DOIUrl":"https://doi.org/10.21272/jnep.12(3).03038","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"24 1","pages":"03038-1-03038-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90867722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05020
Y. Hashim, W. Jabbar
In nowadays technology, the primary memory structure widely used in many digital circuit applications is a six transistor (6T) Static Random Access Memory (SRAM) bit cell. The main reason for minimizing memory bit cell to nanodimensions is to provide the SRAM integrated circuits (ICs) with the possible largest memory size per one chip, and the main unit in 6T SRAM bit cell is the MOSFET. One of the new MOSFET structures that overcome conventional MOSFET structure problems under minimization towards nanodimension is the silicon nanowire transistor (SiNWT). This study is the first to explore and optimize the nanowire ratio of driver to load (KD/KL) for a six n-channel SiNWT-based SRAM bit cell. The MuGFET simulation tool has been used to calculate the output characteristics of each transistor individually, and then these characteristics are implemented in the MATLAB software to produce the final static butterfly and current characteristics of nanowire 6T-SRAM bit cell. The demonstration of the driver to load transistors’ nanowires ratio optimizations of nanoscale n-type SiNWT-based SRAM bit cell has been discussed. In this research, the optimization of KD/KL will strongly depend on inflection voltage and high and low noise margins (NMs) of butterfly characteristics. The improvement of NMs of butterfly characteristics has been done by increasing the drain current (Ids) of the driver transistor. Also, the optimization in principle will depend on whether NMs are equal and high, and the inflection voltage (Vinf) is near to Vdd/2 values as possible. These principles have been used as limiting factors for optimization. The results show that the optimization strongly depends on the nanowire ratio, and the best ratio was KD/KL 4. The increase in KD/KL leads to a continuous increase in NMH, acceptable NML and low percentage increment of static power consumption (ΔP %) at KD/KL 4.
{"title":"Optimization of n-MOS 6T Nanowire SRAM Bit Cell Based on Nanowires Ratio of SiNWTs","authors":"Y. Hashim, W. Jabbar","doi":"10.21272/jnep.12(5).05020","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05020","url":null,"abstract":"In nowadays technology, the primary memory structure widely used in many digital circuit applications is a six transistor (6T) Static Random Access Memory (SRAM) bit cell. The main reason for minimizing memory bit cell to nanodimensions is to provide the SRAM integrated circuits (ICs) with the possible largest memory size per one chip, and the main unit in 6T SRAM bit cell is the MOSFET. One of the new MOSFET structures that overcome conventional MOSFET structure problems under minimization towards nanodimension is the silicon nanowire transistor (SiNWT). This study is the first to explore and optimize the nanowire ratio of driver to load (KD/KL) for a six n-channel SiNWT-based SRAM bit cell. The MuGFET simulation tool has been used to calculate the output characteristics of each transistor individually, and then these characteristics are implemented in the MATLAB software to produce the final static butterfly and current characteristics of nanowire 6T-SRAM bit cell. The demonstration of the driver to load transistors’ nanowires ratio optimizations of nanoscale n-type SiNWT-based SRAM bit cell has been discussed. In this research, the optimization of KD/KL will strongly depend on inflection voltage and high and low noise margins (NMs) of butterfly characteristics. The improvement of NMs of butterfly characteristics has been done by increasing the drain current (Ids) of the driver transistor. Also, the optimization in principle will depend on whether NMs are equal and high, and the inflection voltage (Vinf) is near to Vdd/2 values as possible. These principles have been used as limiting factors for optimization. The results show that the optimization strongly depends on the nanowire ratio, and the best ratio was KD/KL 4. The increase in KD/KL leads to a continuous increase in NMH, acceptable NML and low percentage increment of static power consumption (ΔP %) at KD/KL 4.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"83 2 1","pages":"05020-1-05020-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78108354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(2).02033
P. Vyas, D. Gohil, N. K. Bhatt, P. R. Vyas
The role of phonons is important in accounting various properties of materials. Crystal potential being an anharmonic function of volume, variations are seen in phonon derived properties with a change in volume. In the present work, we employ an approximate technique of expanding phonon frequencies using Taylor series expansion upto second-order in volume to calculate the volume dependent phonon frequencies of CaO in B1 and B2 phases. Equilibrium properties are obtained by fitting Murnaghan EoS to first principles DFT based results, however. The mode Grüneisen parameter and concavity parameter are computed with the help of present ab initio phonon frequencies for both the phases. Their volume dependence are estimated analytically using the proposed scheme. We find that phonon frequencies increase by decreasing volume. Analytically calculated volume dependent phonon frequencies are compared in reasonable agreement with the frequencies obtained directly using DFT for B1-phase. Thus, the present r–space computational scheme of deriving volume dependent phonon frequency proves to be an alternative to overcome lengthy phonon calculations.
{"title":"Quasiharmonic r–space Computational Scheme for Phonon Dynamics: Case Study of Calcium Oxide","authors":"P. Vyas, D. Gohil, N. K. Bhatt, P. R. Vyas","doi":"10.21272/jnep.12(2).02033","DOIUrl":"https://doi.org/10.21272/jnep.12(2).02033","url":null,"abstract":"The role of phonons is important in accounting various properties of materials. Crystal potential being an anharmonic function of volume, variations are seen in phonon derived properties with a change in volume. In the present work, we employ an approximate technique of expanding phonon frequencies using Taylor series expansion upto second-order in volume to calculate the volume dependent phonon frequencies of CaO in B1 and B2 phases. Equilibrium properties are obtained by fitting Murnaghan EoS to first principles DFT based results, however. The mode Grüneisen parameter and concavity parameter are computed with the help of present ab initio phonon frequencies for both the phases. Their volume dependence are estimated analytically using the proposed scheme. We find that phonon frequencies increase by decreasing volume. Analytically calculated volume dependent phonon frequencies are compared in reasonable agreement with the frequencies obtained directly using DFT for B1-phase. Thus, the present r–space computational scheme of deriving volume dependent phonon frequency proves to be an alternative to overcome lengthy phonon calculations.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"12 1","pages":"02033-1-02033-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78543232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(4).04039
A. Shevchenko, M. Barabash
It is established that in a weak magnetic field significantly lower than 2М, where M is the magnetization of a ferromagnetic cylindrical nanowire, the entropy of the latter increases due to the thermal motion of the domain wall comprised in it. As a result, a negative magnetocaloric effect emerges in this system. This phenomenon has a nanoscale nature and disappears with moving to bulk materials. It is shown that the established effect is in accordance with the fundamental Le Chatelier-Brown principle for the selfregulating thermodynamic systems. The obtained result is of significant interest in the context of the development of new methods to achieve precise temperature values on the low dimensional magnetic nanostructures. In turn, in strong magnetic fields of the order of the magnetic field generated by the movement of electrons in atoms (~ (1-10) kOe) a positive magnetocaloric effect takes place, i.e. the temperature of the ferromagnetic nanowire increases with increasing amplitude of the magnetic field. For the diameter of the nanowire, an estimate is given at which the transition from the longitudinal domain wall to the domain wall in the form of a Bloch point occurs.
{"title":"Peculiarities of Magnetocaloric Effect in Ferromagnetic Cylindrical Nanowires with a Domain Wall","authors":"A. Shevchenko, M. Barabash","doi":"10.21272/jnep.12(4).04039","DOIUrl":"https://doi.org/10.21272/jnep.12(4).04039","url":null,"abstract":"It is established that in a weak magnetic field significantly lower than 2М, where M is the magnetization of a ferromagnetic cylindrical nanowire, the entropy of the latter increases due to the thermal motion of the domain wall comprised in it. As a result, a negative magnetocaloric effect emerges in this system. This phenomenon has a nanoscale nature and disappears with moving to bulk materials. It is shown that the established effect is in accordance with the fundamental Le Chatelier-Brown principle for the selfregulating thermodynamic systems. The obtained result is of significant interest in the context of the development of new methods to achieve precise temperature values on the low dimensional magnetic nanostructures. In turn, in strong magnetic fields of the order of the magnetic field generated by the movement of electrons in atoms (~ (1-10) kOe) a positive magnetocaloric effect takes place, i.e. the temperature of the ferromagnetic nanowire increases with increasing amplitude of the magnetic field. For the diameter of the nanowire, an estimate is given at which the transition from the longitudinal domain wall to the domain wall in the form of a Bloch point occurs.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"28 1","pages":"04039-1-04039-3"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73397690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(2).02013
M. Patki, Rohan Bagade, Ganesh Madkaikar, Poonam Agarwal
A chemical bath deposition (CBD) technique was utilized in the synthesis of the Zinc oxide (ZnO) thin films. Aqueous solution of ZnCl2 and NaOH were the sources of Zinc and Oxygen in this process. The thin films were deposited on microscope glass slides. We used Wedge shaped film method to estimate the thickness of the ZnO film. The average thickness of the films obtained was 55.349 m. Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Analysis (EDAX) were used in the study of the surface morphology and elemental composition of ZnO film. The topographical images (shape and size) were obtained in SEM. The presence of Zn and O was confirmed through EDAX. Optical properties of the film were studied by Ultraviolet-Visible spectroscopy technique. The analysis of the UV-Vis spectrum suggested the optical band gap of the ZnO film was 3.54 eV.
{"title":"Study of Surface Morphology and Optical Properties of ZnO Thin Film Synthesized Using CBD Technique","authors":"M. Patki, Rohan Bagade, Ganesh Madkaikar, Poonam Agarwal","doi":"10.21272/jnep.12(2).02013","DOIUrl":"https://doi.org/10.21272/jnep.12(2).02013","url":null,"abstract":"A chemical bath deposition (CBD) technique was utilized in the synthesis of the Zinc oxide (ZnO) thin films. Aqueous solution of ZnCl2 and NaOH were the sources of Zinc and Oxygen in this process. The thin films were deposited on microscope glass slides. We used Wedge shaped film method to estimate the thickness of the ZnO film. The average thickness of the films obtained was 55.349 m. Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Analysis (EDAX) were used in the study of the surface morphology and elemental composition of ZnO film. The topographical images (shape and size) were obtained in SEM. The presence of Zn and O was confirmed through EDAX. Optical properties of the film were studied by Ultraviolet-Visible spectroscopy technique. The analysis of the UV-Vis spectrum suggested the optical band gap of the ZnO film was 3.54 eV.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"20 1","pages":"02013-1-02013-3"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84265632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(4).04034
N. Filipova, O. Korzhik, A. S. Chayka, S. Naida, M. Korzhik, А. S. Naida
Numerical calculations of the amplitude-frequency characteristics of the difference of electric potentials at the output of an elastic spherical converter with internal filling were obtained. Vacuum, helium and water were used as the internal filler. Mathematically the operation of the specified oscillatory system is described using the state equations for piezoceramics, which linearly relate components of mechanical stresses, deformations, electrical tensions and induction; the equations of motion of a thin shell involving equations of Cauchy ratios which are connecting components of the strain tensor and the displacement vector; equations of forced electrostatics. The output electrical signal of the investigated spherical receiving transducer with a fully electrode surface is determined by the centrally symmetric component of the stressstrain state of the piezoceramic shell. It is established that the oscillatory system is characterized by the presence of a basic resonance of zero mode and an additional position whose position depends on the electrical load and the characteristics of the aggregate. It is shown that the presence of a filler makes it difficult to match the resistance of the converter with the input resistance of the receiving path and leads to a decrease in the width of its working strip. The resonance is no longer accompanied by antiresonance, as in the case of air or helium filling. Since helium is very similar to air in its characteristics, the frequency response is similar to the frequency response of air. The resonance region accompanied by antiresonance almost coincides in frequency, and the local extremum of the frequency response in the low-frequency region is as weak as in the case of filling the converter with air.
{"title":"Dynamics of Receiving Electroelastic Spherical Shell with a Filler","authors":"N. Filipova, O. Korzhik, A. S. Chayka, S. Naida, M. Korzhik, А. S. Naida","doi":"10.21272/jnep.12(4).04034","DOIUrl":"https://doi.org/10.21272/jnep.12(4).04034","url":null,"abstract":"Numerical calculations of the amplitude-frequency characteristics of the difference of electric potentials at the output of an elastic spherical converter with internal filling were obtained. Vacuum, helium and water were used as the internal filler. Mathematically the operation of the specified oscillatory system is described using the state equations for piezoceramics, which linearly relate components of mechanical stresses, deformations, electrical tensions and induction; the equations of motion of a thin shell involving equations of Cauchy ratios which are connecting components of the strain tensor and the displacement vector; equations of forced electrostatics. The output electrical signal of the investigated spherical receiving transducer with a fully electrode surface is determined by the centrally symmetric component of the stressstrain state of the piezoceramic shell. It is established that the oscillatory system is characterized by the presence of a basic resonance of zero mode and an additional position whose position depends on the electrical load and the characteristics of the aggregate. It is shown that the presence of a filler makes it difficult to match the resistance of the converter with the input resistance of the receiving path and leads to a decrease in the width of its working strip. The resonance is no longer accompanied by antiresonance, as in the case of air or helium filling. Since helium is very similar to air in its characteristics, the frequency response is similar to the frequency response of air. The resonance region accompanied by antiresonance almost coincides in frequency, and the local extremum of the frequency response in the low-frequency region is as weak as in the case of filling the converter with air.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"53 1","pages":"04034-1-04034-7"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84778086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(4).04025
A. Pavliuchenko, O. Shyiko, T. Klochkova
The method of direct continuous measurement of the angle of attack of an aerophysical missile complex, with the use of a Hall effect sensor, when in motion in its path for the numbers of Mach of the flow М∞ ≤ 4.5, Reynolds along the forebody length ReL,∞ ≤ 108, acceleration а ≤ 32 g under the operation of a dual-thrust rocket engine (DTRE) is presented. The airborne electronic measurement system of the aerophysical missile complex, including the silicon Hall effect sensor as a sensor of the missile complex orientation in relation to the full vector of the Earth’s magnetic field in this experiment, is described in detail. The Hall effect sensor has been installed between the two concentrators of magnetic flux from permalloy plates to amplify the Earth’s magnetic field. The voltage in the magnetic field measurement channel has been determined by the dependence of u K·H, where K is the meter conversion coefficient, H is the projection of the magnetic field intensity vector on the meter. A signal from the Hall effect sensor has arrived at the magnetic storage. Based on processing the path data on the angle of elevation, azimuth and range, it is found that the direction of a vector of free external stream velocity in flight of the missile complex with the operating DTRE has not changed, and the angle between the axis of this complex and the full vector of the Earth’s magnetic field has been constant. This has enabled to conclude that the angle of attack in flight of the aerophysical missile complex is equal to zero with a precision of 0.3. The result corresponds to the known theoretical data and is important for the calculation of thermal flows, surface friction resistance, bottom resistance in the presence of laminar-turbulent transition, turbulent regime of wall boundary flow and its relaminarization on streamlined surfaces. Based on flight data, a scheme of the aerophysical complex for measuring the angle of attack of an uncontrolled supersonic rocket with the aim of studying its oscillations and the problem of flight stability in the active and passive sections of the trajectory is proposed.
{"title":"Measurement of the Angle of Attack of an Aerophysical Missile Complex in Flight Based on the Hall Effect Sensor and Electronic Measurement System","authors":"A. Pavliuchenko, O. Shyiko, T. Klochkova","doi":"10.21272/jnep.12(4).04025","DOIUrl":"https://doi.org/10.21272/jnep.12(4).04025","url":null,"abstract":"The method of direct continuous measurement of the angle of attack of an aerophysical missile complex, with the use of a Hall effect sensor, when in motion in its path for the numbers of Mach of the flow М∞ ≤ 4.5, Reynolds along the forebody length ReL,∞ ≤ 108, acceleration а ≤ 32 g under the operation of a dual-thrust rocket engine (DTRE) is presented. The airborne electronic measurement system of the aerophysical missile complex, including the silicon Hall effect sensor as a sensor of the missile complex orientation in relation to the full vector of the Earth’s magnetic field in this experiment, is described in detail. The Hall effect sensor has been installed between the two concentrators of magnetic flux from permalloy plates to amplify the Earth’s magnetic field. The voltage in the magnetic field measurement channel has been determined by the dependence of u K·H, where K is the meter conversion coefficient, H is the projection of the magnetic field intensity vector on the meter. A signal from the Hall effect sensor has arrived at the magnetic storage. Based on processing the path data on the angle of elevation, azimuth and range, it is found that the direction of a vector of free external stream velocity in flight of the missile complex with the operating DTRE has not changed, and the angle between the axis of this complex and the full vector of the Earth’s magnetic field has been constant. This has enabled to conclude that the angle of attack in flight of the aerophysical missile complex is equal to zero with a precision of 0.3. The result corresponds to the known theoretical data and is important for the calculation of thermal flows, surface friction resistance, bottom resistance in the presence of laminar-turbulent transition, turbulent regime of wall boundary flow and its relaminarization on streamlined surfaces. Based on flight data, a scheme of the aerophysical complex for measuring the angle of attack of an uncontrolled supersonic rocket with the aim of studying its oscillations and the problem of flight stability in the active and passive sections of the trajectory is proposed.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"55 1","pages":"04025-1-04025-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85011240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05026
A. Artyukhov, K. Berladir
The article deals with morphological features of the nanoporous surface of ammonium nitrate granules obtained through the humidification of the ordinary ammonium nitrate followed by heat treatment. A new method to produce porous ammonium nitrate in a vortex device with a remote pre-humidification zone is proposed. The morphology of the initial granules of the ordinary ammonium nitrate, ammonium nitrate after humidification and heat treatment in a vortex granulator, and ammonium nitrate after humidification and heat treatment in a vortex granulator with a pre-humidification zone is compared. The obtained data form the basis to improve the technology of the porous ammonium nitrate production in devices with active hydrodynamic modes.
{"title":"Formation of the Ammonium Nitrate Nanoporous Structure in the Vortex Device with Pre-humidification of Granules","authors":"A. Artyukhov, K. Berladir","doi":"10.21272/jnep.12(5).05026","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05026","url":null,"abstract":"The article deals with morphological features of the nanoporous surface of ammonium nitrate granules obtained through the humidification of the ordinary ammonium nitrate followed by heat treatment. A new method to produce porous ammonium nitrate in a vortex device with a remote pre-humidification zone is proposed. The morphology of the initial granules of the ordinary ammonium nitrate, ammonium nitrate after humidification and heat treatment in a vortex granulator, and ammonium nitrate after humidification and heat treatment in a vortex granulator with a pre-humidification zone is compared. The obtained data form the basis to improve the technology of the porous ammonium nitrate production in devices with active hydrodynamic modes.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"4 1","pages":"05026-1-05026-7"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85415535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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