Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188291
P. Russer, S. Muller
A method for noise analysis of microwave multiports with general internal topology is presented. The multiport circuit is separated into the connection circuit and the circuit elements. Based upon the digraph representation of the connection circuit, the scattering matrix of the connection circuit is computed from the fundamental cut set matrix and the fundamental loop matrix of the connection circuit. From this and the S-parameters of the circuit elements and the correlation spectra of the internal noise sources, the S-matrix of the multiport and the correlation matrix of its external equivalent noise sources may be determined directly. Circuit elements may be noisy two-terminal elements as well as noisy n-terminal elements and noisy multiports.<>
{"title":"Noise analysis of microwave circuits with general topology","authors":"P. Russer, S. Muller","doi":"10.1109/MWSYM.1992.188291","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188291","url":null,"abstract":"A method for noise analysis of microwave multiports with general internal topology is presented. The multiport circuit is separated into the connection circuit and the circuit elements. Based upon the digraph representation of the connection circuit, the scattering matrix of the connection circuit is computed from the fundamental cut set matrix and the fundamental loop matrix of the connection circuit. From this and the S-parameters of the circuit elements and the correlation spectra of the internal noise sources, the S-matrix of the multiport and the correlation matrix of its external equivalent noise sources may be determined directly. Circuit elements may be noisy two-terminal elements as well as noisy n-terminal elements and noisy multiports.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128833524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188245
M. Kimishima, S. Ohmura, T. Ashizuka
A one-octave bandwidth semi-monolithic VCO (voltage-controlled oscillator) which has output power control capability has been developed using an active power splitter. This novel VCO exhibits an output power of 13.6+or-1.2 dBm and an output power control variation of 30 dB. The output power match between two output ports is less than 0.6 dB over 8.8 to 17.6 GHz. This semi-monolithic approach provides significant performance, cost, reliability, reproducibility, and manufacturing cycles. This VCO is useful for such applications as multichannel systems and frequency synthesizers.<>
{"title":"A semi-monolithic wideband VCO with output power control capability using an active power splitter","authors":"M. Kimishima, S. Ohmura, T. Ashizuka","doi":"10.1109/MWSYM.1992.188245","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188245","url":null,"abstract":"A one-octave bandwidth semi-monolithic VCO (voltage-controlled oscillator) which has output power control capability has been developed using an active power splitter. This novel VCO exhibits an output power of 13.6+or-1.2 dBm and an output power control variation of 30 dB. The output power match between two output ports is less than 0.6 dB over 8.8 to 17.6 GHz. This semi-monolithic approach provides significant performance, cost, reliability, reproducibility, and manufacturing cycles. This VCO is useful for such applications as multichannel systems and frequency synthesizers.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129477487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188243
U. Guttich
A monolithic GaAs 23-GHz dielectric resonator oscillator (DRO) was investigated as a self-oscillating mixer (SOM) in Doppler-radar applications. A maximum conversion gain of 10 dB at low oscillator power level and small frequency off carrier was calculated and measured. The associated minimum detectable signal was determined to be between -130 dBm and -120 dBm. These results favor the application of MESFET SOMs as low-cost monolithically integrated Doppler sensors.<>
{"title":"A 23 GHz monolithic MESFET DRO as self-oscillating mixer","authors":"U. Guttich","doi":"10.1109/MWSYM.1992.188243","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188243","url":null,"abstract":"A monolithic GaAs 23-GHz dielectric resonator oscillator (DRO) was investigated as a self-oscillating mixer (SOM) in Doppler-radar applications. A maximum conversion gain of 10 dB at low oscillator power level and small frequency off carrier was calculated and measured. The associated minimum detectable signal was determined to be between -130 dBm and -120 dBm. These results favor the application of MESFET SOMs as low-cost monolithically integrated Doppler sensors.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131087361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188085
H. Roe, G. S. Hobson
The authors describe a combined FMCW (frequency modulated continuous wave) and Doppler radar system, which can separate traffic into five groups to accuracies of about 75% using length and height criteria. They discuss the possibility of increased determination using the more detailed profile information. In addition to the length and height data, it is possible to extract shape information for a vehicle. This shape has certain characteristics important for classification. It has been shown that the vertical face of vehicles such as buses can be identified and distinguished from other vehicles such as transit vans which have hoods or sloping fronts. Another important feature is the segmentation of the profile which occurs for trucks, which tend to have cabs and trailers, but not for buses, which are flat and continuous.<>
{"title":"Improved discrimination of microwave vehicle profiles","authors":"H. Roe, G. S. Hobson","doi":"10.1109/MWSYM.1992.188085","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188085","url":null,"abstract":"The authors describe a combined FMCW (frequency modulated continuous wave) and Doppler radar system, which can separate traffic into five groups to accuracies of about 75% using length and height criteria. They discuss the possibility of increased determination using the more detailed profile information. In addition to the length and height data, it is possible to extract shape information for a vehicle. This shape has certain characteristics important for classification. It has been shown that the vertical face of vehicles such as buses can be identified and distinguished from other vehicles such as transit vans which have hoods or sloping fronts. Another important feature is the segmentation of the profile which occurs for trucks, which tend to have cabs and trailers, but not for buses, which are flat and continuous.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129953614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188325
O. Zucker, I. Mcintyre
The authors present a theoretical discussion of the performance of photoconductive switches mounted in a matched transmission line structure. The issues of risetime and power density are addressed. They define a switch performance parameter, alpha , which results in a recipe for optimizing the performance of photoconductive switches. This parameter, which is related to the power produced per unit width of the system and the pulse risetime, shows that, in the high-speed regime, there is no simple trade-off for power and speed, and that high-performance operation necessitates high switch current density, i.e. low impedance and linear operation. The authors also discuss the limits on alpha due to materials' properties and conclude with a discussion of experimental life-testing and a comparison between the theory and experimental results.<>
{"title":"The generation of high energy ultra wide band pulses","authors":"O. Zucker, I. Mcintyre","doi":"10.1109/MWSYM.1992.188325","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188325","url":null,"abstract":"The authors present a theoretical discussion of the performance of photoconductive switches mounted in a matched transmission line structure. The issues of risetime and power density are addressed. They define a switch performance parameter, alpha , which results in a recipe for optimizing the performance of photoconductive switches. This parameter, which is related to the power produced per unit width of the system and the pulse risetime, shows that, in the high-speed regime, there is no simple trade-off for power and speed, and that high-performance operation necessitates high switch current density, i.e. low impedance and linear operation. The authors also discuss the limits on alpha due to materials' properties and conclude with a discussion of experimental life-testing and a comparison between the theory and experimental results.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128049007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188320
I. Angelov, H. Zirath, N. Rorsman
A novel large-signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length delta -doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.<>
{"title":"A new empirical nonlinear model for HEMT-devices","authors":"I. Angelov, H. Zirath, N. Rorsman","doi":"10.1109/MWSYM.1992.188320","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188320","url":null,"abstract":"A novel large-signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length delta -doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128788599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188073
J. L. Freeman, S. Ray, D. West, A. Thompson
The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting microwave elements where electrical bias is not possible. Results from two devices are presented: a surface-depleted, gateless, optical FET; and a FET controlled by an integrated photovoltaic diode. Insertion losses of 3 dB and isolations of 20 dB were obtained up to 5.6 GHz with an optical power of 1 mW.<>
{"title":"Optoelectronic devices for unbiased microwave switching","authors":"J. L. Freeman, S. Ray, D. West, A. Thompson","doi":"10.1109/MWSYM.1992.188073","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188073","url":null,"abstract":"The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting microwave elements where electrical bias is not possible. Results from two devices are presented: a surface-depleted, gateless, optical FET; and a FET controlled by an integrated photovoltaic diode. Insertion losses of 3 dB and isolations of 20 dB were obtained up to 5.6 GHz with an optical power of 1 mW.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126008096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188288
M. Meehan, P. Draxler, L.C. Henning
A method for first-pass MMIC (monolithic microwave integrated circuit) design success is presented. The power of statistical design and modeling is combined with that of circuit-level electromagnetic simulation in a CAD (computer-aided-design) system, providing the ultimate means for predicting production success. The performance of the proposed CAD system is verified by comparing simulated and actual statistical response characteristics of a three-stage, 7-11-GHz low-noise-amplifier GaAs MMIC.<>
{"title":"Combining yield optimization with circuit level electromagnetic simulation (MMIC design)","authors":"M. Meehan, P. Draxler, L.C. Henning","doi":"10.1109/MWSYM.1992.188288","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188288","url":null,"abstract":"A method for first-pass MMIC (monolithic microwave integrated circuit) design success is presented. The power of statistical design and modeling is combined with that of circuit-level electromagnetic simulation in a CAD (computer-aided-design) system, providing the ultimate means for predicting production success. The performance of the proposed CAD system is verified by comparing simulated and actual statistical response characteristics of a three-stage, 7-11-GHz low-noise-amplifier GaAs MMIC.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"16 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126088643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188236
O. Gandhi, J. Chen, C. Furse
A weakness of the FDTD (finite-difference, time-domain) method is that dispersion of the dielectric properties of the scattering/absorption body is often ignored and frequency-independent properties are generally taken. While this is not a disadvantage for continuous-wave or narrowband irradiation, the results thus obtained may be higher erroneous for short pulses where ultrawide bandwidths are involved. A differential equation approach was developed. It can be used for general dispersive media for which in *( omega ) and mu *( omega ) may be expressible in terms of ration functions, or for human tissues where multiterm Debye relaxation equations must generally be used. The method is illustrated by means of one- and three-dimensional examples of media for which in *( omega ) is given by a multiterm Debye equation and for a dispersive model of the human body.<>
{"title":"A frequency-dependent FDTD method for induced-current calculations for a heterogeneous model of the human body","authors":"O. Gandhi, J. Chen, C. Furse","doi":"10.1109/MWSYM.1992.188236","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188236","url":null,"abstract":"A weakness of the FDTD (finite-difference, time-domain) method is that dispersion of the dielectric properties of the scattering/absorption body is often ignored and frequency-independent properties are generally taken. While this is not a disadvantage for continuous-wave or narrowband irradiation, the results thus obtained may be higher erroneous for short pulses where ultrawide bandwidths are involved. A differential equation approach was developed. It can be used for general dispersive media for which in *( omega ) and mu *( omega ) may be expressible in terms of ration functions, or for human tissues where multiterm Debye relaxation equations must generally be used. The method is illustrated by means of one- and three-dimensional examples of media for which in *( omega ) is given by a multiterm Debye equation and for a dispersive model of the human body.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126788785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188164
B. Hughes, Andrea Pierenrico Ferrero, A. Cognata
A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GHz.<>
{"title":"Accurate on-wafer power and harmonic measurements of MM-wave amplifiers and devices","authors":"B. Hughes, Andrea Pierenrico Ferrero, A. Cognata","doi":"10.1109/MWSYM.1992.188164","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188164","url":null,"abstract":"A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GHz.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126889742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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