Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188205
T. Murphy, J. Gipprich, M. Hines, D. Kryger
A low-loss broadband 6-b phase shifter has been developed in a form suitable for airborne phased array radar applications. A glass-based microwave circuit integration (GMIC, glass microwave integrated circuit) is used, in which thin-film, process-oriented photolithographic technology is used to realize all of the passive components on a glass surface. Hybrid-coupled reflection circuitry covers the frequency range of 6-18 GHz with losses averaging from about 3 dB at 6 GHz to about 8 dB at 18 GHz over the 64 phase states covering a 360 degrees range.<>
{"title":"A six-bit GMIC phase shifter for 6-18 GHz","authors":"T. Murphy, J. Gipprich, M. Hines, D. Kryger","doi":"10.1109/MWSYM.1992.188205","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188205","url":null,"abstract":"A low-loss broadband 6-b phase shifter has been developed in a form suitable for airborne phased array radar applications. A glass-based microwave circuit integration (GMIC, glass microwave integrated circuit) is used, in which thin-film, process-oriented photolithographic technology is used to realize all of the passive components on a glass surface. Hybrid-coupled reflection circuitry covers the frequency range of 6-18 GHz with losses averaging from about 3 dB at 6 GHz to about 8 dB at 18 GHz over the 64 phase states covering a 360 degrees range.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127382933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188046
C. Cox, L. A. Bernotas, G. Betts, A. Grayzel, D. O'Brien, J. Scozzafava, A. Yee
The design and environmental testing of a modular analog fiber-optic link are reported. Over a 10-MHz bandwidth the link noise figure was 8 dB without electronic amplification. The link performance and the systems effects with active and passive implementations of module calibration and modulator bias stabilization are discussed.<>
{"title":"An externally modulated fiber-optic link test bed for characterizing link performance in a system","authors":"C. Cox, L. A. Bernotas, G. Betts, A. Grayzel, D. O'Brien, J. Scozzafava, A. Yee","doi":"10.1109/MWSYM.1992.188046","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188046","url":null,"abstract":"The design and environmental testing of a modular analog fiber-optic link are reported. Over a 10-MHz bandwidth the link noise figure was 8 dB without electronic amplification. The link performance and the systems effects with active and passive implementations of module calibration and modulator bias stabilization are discussed.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127387937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188122
J. Nielsen, W. Hoefer
The general dispersion equation, derived for the 3-D transmission line matrix (TLM) condensed node mesh, is presented and compared to dispersion of the finite-difference time-domain and the expanded node TLM schemes. Spurious mode propagation, as predicted by the dispersion equation for the condensed node, is also addressed. Analysis of dispersive effects is essential to assessing abnormalities in time-domain simulations.<>
{"title":"Effect of dispersion in the 3-D condensed node TLM mesh","authors":"J. Nielsen, W. Hoefer","doi":"10.1109/MWSYM.1992.188122","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188122","url":null,"abstract":"The general dispersion equation, derived for the 3-D transmission line matrix (TLM) condensed node mesh, is presented and compared to dispersion of the finite-difference time-domain and the expanded node TLM schemes. Spurious mode propagation, as predicted by the dispersion equation for the condensed node, is also addressed. Analysis of dispersive effects is essential to assessing abnormalities in time-domain simulations.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"1972 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130027780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.187933
R. Stokes, J. D. Crawford
The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<>
{"title":"X-band thin film acoustic filters on GaAs","authors":"R. Stokes, J. D. Crawford","doi":"10.1109/MWSYM.1992.187933","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.187933","url":null,"abstract":"The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132264064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188192
J. Kessler, P. Russer, R. Dill
A miniaturized YBa/sub 2/Cu/sub 3/O/sub 7-x/ coplanar stripline structure is investigated theoretically. The field calculation, on which the results are based, was performed by means of a partial wave synthesis which took into consideration the exact field distribution within the superconducting regions. The high-T/sub c/ superconductor material is described by the two-fluid model and the London theory. Approximation formulas for effective permittivity, attenuation, and characteristic impedance are deduced from the numerical results.<>
{"title":"Modelling of miniaturized coplanar striplines based on YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films","authors":"J. Kessler, P. Russer, R. Dill","doi":"10.1109/MWSYM.1992.188192","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188192","url":null,"abstract":"A miniaturized YBa/sub 2/Cu/sub 3/O/sub 7-x/ coplanar stripline structure is investigated theoretically. The field calculation, on which the results are based, was performed by means of a partial wave synthesis which took into consideration the exact field distribution within the superconducting regions. The high-T/sub c/ superconductor material is described by the two-fluid model and the London theory. Approximation formulas for effective permittivity, attenuation, and characteristic impedance are deduced from the numerical results.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.187959
M. Foisy, P.E. Jeroma, G. Martin
A nonquasistatic charge-conserving spline-based model has been implemented in the EEsof harmonic-balance simulator. The model uses a relaxation-time approximation to describe the intrinsic charging dynamics of unipolar transistors under arbitrary excitation. By describing the variation of instantaneous charges as a relaxation toward the time-varying steady-state target set by terminal bias, nonquasistatic behavior is accurately represented. Small-signal measurements are used to calculate the steady-state charges, currents, and time constants used in the simulation. Because these parameters are represented by bivariate splines, the characteristics of diverse transistors, including HEMTs (high electron mobility transistors) and MESFETs, have been accurately modeled. On-wafer large-signal measurements of HEMTs closely match simulation results.<>
{"title":"Large-signal relaxation-time model for HEMTs and MESFETs","authors":"M. Foisy, P.E. Jeroma, G. Martin","doi":"10.1109/MWSYM.1992.187959","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.187959","url":null,"abstract":"A nonquasistatic charge-conserving spline-based model has been implemented in the EEsof harmonic-balance simulator. The model uses a relaxation-time approximation to describe the intrinsic charging dynamics of unipolar transistors under arbitrary excitation. By describing the variation of instantaneous charges as a relaxation toward the time-varying steady-state target set by terminal bias, nonquasistatic behavior is accurately represented. Small-signal measurements are used to calculate the steady-state charges, currents, and time constants used in the simulation. Because these parameters are represented by bivariate splines, the characteristics of diverse transistors, including HEMTs (high electron mobility transistors) and MESFETs, have been accurately modeled. On-wafer large-signal measurements of HEMTs closely match simulation results.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"45 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123253588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188330
Y. Ishikawa, J. Hattori, M. Andoh, T. Nishikawa
A small-size, high-power duplexer in the 800-MHz band has been developed by using whole monoblock TM/sub 110/ dual-mode dielectric resonators. Insertion loss is less than 0.35 dB over a 20-MHz bandwidth in a TX filter and less than 0.47 dB over a 40-MHz bandwidth in a RX filter. Volume is less than 3000 cm/sup 3/, which corresponds to about 20% of the reentrant cavity resonator filter. This duplexer is useful for current and future cellular base stations.<>
{"title":"800 MHz high-power duplexer using TM dual mode dielectric resonators","authors":"Y. Ishikawa, J. Hattori, M. Andoh, T. Nishikawa","doi":"10.1109/MWSYM.1992.188330","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188330","url":null,"abstract":"A small-size, high-power duplexer in the 800-MHz band has been developed by using whole monoblock TM/sub 110/ dual-mode dielectric resonators. Insertion loss is less than 0.35 dB over a 20-MHz bandwidth in a TX filter and less than 0.47 dB over a 40-MHz bandwidth in a RX filter. Volume is less than 3000 cm/sup 3/, which corresponds to about 20% of the reentrant cavity resonator filter. This duplexer is useful for current and future cellular base stations.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126543120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.187920
H. Ashoka, V. Waris, P. Martin
A narrowband low-noise amplifier (LNA) and a mixer at 30 GHz have been developed using packaged commercial HEMTs (high electron mobility transistors) and waveguide matching circuits. The four-stage HEMT LNA provided 26 dB gain and a 2.8 dB noise figure at 30 GHz. The HEMT mixer provided a conversion gain of 0.5 dB with 5 dB noise figure. The design features very simple construction and tuning.<>
{"title":"Millimetre wave receiver components using packaged HEMTs","authors":"H. Ashoka, V. Waris, P. Martin","doi":"10.1109/MWSYM.1992.187920","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.187920","url":null,"abstract":"A narrowband low-noise amplifier (LNA) and a mixer at 30 GHz have been developed using packaged commercial HEMTs (high electron mobility transistors) and waveguide matching circuits. The four-stage HEMT LNA provided 26 dB gain and a 2.8 dB noise figure at 30 GHz. The HEMT mixer provided a conversion gain of 0.5 dB with 5 dB noise figure. The design features very simple construction and tuning.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121292984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.187937
T. Tieman, A. P. de Hek, F.L.M. van den Bogaaart, W.M.A. van Hoek
The design, fabrication, performance, and production results of a GaAs monolithic phase shifter, based on a vector modulator principle, are described. The device exhibits a typical RMS (root-mean-square) phase error of about 3 degrees and an RMS amplitude error of less than 0.30 dB across the frequency band from 7.0-10.5 GHz and over a linear controllable gain range of 15 dB. Typical insertion gain is 0 dB, input return losses are better than 15 dB, and output return losses are better than 10 dB. The device is intended for application in a wideband active phased-array antenna. The analog control of the device enables the correction of the systematic phase errors and amplitude errors. Tests have demonstrated that through phase correction the RMS phase error is reduced to less than 0.7 degrees while the RMS amplitude error is still less than 0.30 dB.<>
{"title":"A single chip X-band phase shifter with 6 bit uncorrected phase resolution and more than 8 bit corrected phase resolution","authors":"T. Tieman, A. P. de Hek, F.L.M. van den Bogaaart, W.M.A. van Hoek","doi":"10.1109/MWSYM.1992.187937","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.187937","url":null,"abstract":"The design, fabrication, performance, and production results of a GaAs monolithic phase shifter, based on a vector modulator principle, are described. The device exhibits a typical RMS (root-mean-square) phase error of about 3 degrees and an RMS amplitude error of less than 0.30 dB across the frequency band from 7.0-10.5 GHz and over a linear controllable gain range of 15 dB. Typical insertion gain is 0 dB, input return losses are better than 15 dB, and output return losses are better than 10 dB. The device is intended for application in a wideband active phased-array antenna. The analog control of the device enables the correction of the systematic phase errors and amplitude errors. Tests have demonstrated that through phase correction the RMS phase error is reduced to less than 0.7 degrees while the RMS amplitude error is still less than 0.30 dB.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121663784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188302
Y. Ota, M. Yanagihara, T. Yokoyama, C. Azuma, M. Maeda, O. Ishikawa
A highly efficient and very compact power module using GaAs MESFETs has been developed for cellular telephones. The very-high-performance FETs, PPO (poly-phenylene oxide) printed board, and 1005-type chip C/Rs are mounted inside a very small frame of 0.8 cm/sup 3/. The load impedance of the first FET in the module is set at 50 Omega in order to satisfy the stability of the module to prevent oscillation. The typical RF properties of the module are as follows: an output power of 32.3 dBm and a power-added efficiency of 65% at a frequency of 930 MHz, an input power of 7 dBm, an operating voltage of 4.7 V.<>
{"title":"Highly efficient, very compact GaAs power module for cellular telephone","authors":"Y. Ota, M. Yanagihara, T. Yokoyama, C. Azuma, M. Maeda, O. Ishikawa","doi":"10.1109/MWSYM.1992.188302","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188302","url":null,"abstract":"A highly efficient and very compact power module using GaAs MESFETs has been developed for cellular telephones. The very-high-performance FETs, PPO (poly-phenylene oxide) printed board, and 1005-type chip C/Rs are mounted inside a very small frame of 0.8 cm/sup 3/. The load impedance of the first FET in the module is set at 50 Omega in order to satisfy the stability of the module to prevent oscillation. The typical RF properties of the module are as follows: an output power of 32.3 dBm and a power-added efficiency of 65% at a frequency of 930 MHz, an input power of 7 dBm, an operating voltage of 4.7 V.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123775001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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