Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.187913
J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez
The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement.<>
{"title":"An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications","authors":"J. A. Casao, P. Dorta, J. L. Cáceres, M. Salazar-Palma, J. Perez","doi":"10.1109/MWSYM.1992.187913","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.187913","url":null,"abstract":"The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124275574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188085
H. Roe, G. S. Hobson
The authors describe a combined FMCW (frequency modulated continuous wave) and Doppler radar system, which can separate traffic into five groups to accuracies of about 75% using length and height criteria. They discuss the possibility of increased determination using the more detailed profile information. In addition to the length and height data, it is possible to extract shape information for a vehicle. This shape has certain characteristics important for classification. It has been shown that the vertical face of vehicles such as buses can be identified and distinguished from other vehicles such as transit vans which have hoods or sloping fronts. Another important feature is the segmentation of the profile which occurs for trucks, which tend to have cabs and trailers, but not for buses, which are flat and continuous.<>
{"title":"Improved discrimination of microwave vehicle profiles","authors":"H. Roe, G. S. Hobson","doi":"10.1109/MWSYM.1992.188085","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188085","url":null,"abstract":"The authors describe a combined FMCW (frequency modulated continuous wave) and Doppler radar system, which can separate traffic into five groups to accuracies of about 75% using length and height criteria. They discuss the possibility of increased determination using the more detailed profile information. In addition to the length and height data, it is possible to extract shape information for a vehicle. This shape has certain characteristics important for classification. It has been shown that the vertical face of vehicles such as buses can be identified and distinguished from other vehicles such as transit vans which have hoods or sloping fronts. Another important feature is the segmentation of the profile which occurs for trucks, which tend to have cabs and trailers, but not for buses, which are flat and continuous.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129953614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188012
T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak
A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<>
{"title":"A double balanced 3-18 GHz resistive HEMT monolithic mixer","authors":"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak","doi":"10.1109/MWSYM.1992.188012","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188012","url":null,"abstract":"A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130121429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188245
M. Kimishima, S. Ohmura, T. Ashizuka
A one-octave bandwidth semi-monolithic VCO (voltage-controlled oscillator) which has output power control capability has been developed using an active power splitter. This novel VCO exhibits an output power of 13.6+or-1.2 dBm and an output power control variation of 30 dB. The output power match between two output ports is less than 0.6 dB over 8.8 to 17.6 GHz. This semi-monolithic approach provides significant performance, cost, reliability, reproducibility, and manufacturing cycles. This VCO is useful for such applications as multichannel systems and frequency synthesizers.<>
{"title":"A semi-monolithic wideband VCO with output power control capability using an active power splitter","authors":"M. Kimishima, S. Ohmura, T. Ashizuka","doi":"10.1109/MWSYM.1992.188245","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188245","url":null,"abstract":"A one-octave bandwidth semi-monolithic VCO (voltage-controlled oscillator) which has output power control capability has been developed using an active power splitter. This novel VCO exhibits an output power of 13.6+or-1.2 dBm and an output power control variation of 30 dB. The output power match between two output ports is less than 0.6 dB over 8.8 to 17.6 GHz. This semi-monolithic approach provides significant performance, cost, reliability, reproducibility, and manufacturing cycles. This VCO is useful for such applications as multichannel systems and frequency synthesizers.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129477487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188325
O. Zucker, I. Mcintyre
The authors present a theoretical discussion of the performance of photoconductive switches mounted in a matched transmission line structure. The issues of risetime and power density are addressed. They define a switch performance parameter, alpha , which results in a recipe for optimizing the performance of photoconductive switches. This parameter, which is related to the power produced per unit width of the system and the pulse risetime, shows that, in the high-speed regime, there is no simple trade-off for power and speed, and that high-performance operation necessitates high switch current density, i.e. low impedance and linear operation. The authors also discuss the limits on alpha due to materials' properties and conclude with a discussion of experimental life-testing and a comparison between the theory and experimental results.<>
{"title":"The generation of high energy ultra wide band pulses","authors":"O. Zucker, I. Mcintyre","doi":"10.1109/MWSYM.1992.188325","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188325","url":null,"abstract":"The authors present a theoretical discussion of the performance of photoconductive switches mounted in a matched transmission line structure. The issues of risetime and power density are addressed. They define a switch performance parameter, alpha , which results in a recipe for optimizing the performance of photoconductive switches. This parameter, which is related to the power produced per unit width of the system and the pulse risetime, shows that, in the high-speed regime, there is no simple trade-off for power and speed, and that high-performance operation necessitates high switch current density, i.e. low impedance and linear operation. The authors also discuss the limits on alpha due to materials' properties and conclude with a discussion of experimental life-testing and a comparison between the theory and experimental results.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128049007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188026
Y. Carmel, W. Lou, T. Antonsen, John C. Rodgers, B. Levush, J. Tate, W. Destler, V. Granatstein
Summary form only given, as follows. The area of relativistic plasma microwave electronics has recently generated renewed interest in the microwave and millimeter-wave device community. The authors have obtained experimental data demonstrating that the presence of a low-density background plasma in a relativistic backward wave oscillator leads to several beneficial effects, including enhanced interaction efficiency (40%), operation at very low and possibly zero guiding magnetic field, tunability by controlling the plasma density, a high degree of spectral purity, and operation well above the vacuum limiting current.<>
{"title":"Relativistic plasma microwave electronics: studies of high power plasma filled backward wave oscillators","authors":"Y. Carmel, W. Lou, T. Antonsen, John C. Rodgers, B. Levush, J. Tate, W. Destler, V. Granatstein","doi":"10.1109/MWSYM.1992.188026","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188026","url":null,"abstract":"Summary form only given, as follows. The area of relativistic plasma microwave electronics has recently generated renewed interest in the microwave and millimeter-wave device community. The authors have obtained experimental data demonstrating that the presence of a low-density background plasma in a relativistic backward wave oscillator leads to several beneficial effects, including enhanced interaction efficiency (40%), operation at very low and possibly zero guiding magnetic field, tunability by controlling the plasma density, a high degree of spectral purity, and operation well above the vacuum limiting current.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128581380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188096
S. Malone, A. Paolella, P. Herczfeld, T. Berceli
The basic motivation for the research presented here is the chip-level integration of microwave and photonic components. It is demonstrated that a microwave signal can be mixed with a modulated optical signal in a MESFET. A brief theoretical analysis of the IF term of the drain current is given in terms of the input signal parameters and device characteristics. Experimental results for two mixing configurations using the MESFET are shown, along with biasing conditions which maximize the IF response.<>
{"title":"MMIC compatible lightwave-microwave mixing techniques","authors":"S. Malone, A. Paolella, P. Herczfeld, T. Berceli","doi":"10.1109/MWSYM.1992.188096","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188096","url":null,"abstract":"The basic motivation for the research presented here is the chip-level integration of microwave and photonic components. It is demonstrated that a microwave signal can be mixed with a modulated optical signal in a MESFET. A brief theoretical analysis of the IF term of the drain current is given in terms of the input signal parameters and device characteristics. Experimental results for two mixing configurations using the MESFET are shown, along with biasing conditions which maximize the IF response.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125005828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188291
P. Russer, S. Muller
A method for noise analysis of microwave multiports with general internal topology is presented. The multiport circuit is separated into the connection circuit and the circuit elements. Based upon the digraph representation of the connection circuit, the scattering matrix of the connection circuit is computed from the fundamental cut set matrix and the fundamental loop matrix of the connection circuit. From this and the S-parameters of the circuit elements and the correlation spectra of the internal noise sources, the S-matrix of the multiport and the correlation matrix of its external equivalent noise sources may be determined directly. Circuit elements may be noisy two-terminal elements as well as noisy n-terminal elements and noisy multiports.<>
{"title":"Noise analysis of microwave circuits with general topology","authors":"P. Russer, S. Muller","doi":"10.1109/MWSYM.1992.188291","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188291","url":null,"abstract":"A method for noise analysis of microwave multiports with general internal topology is presented. The multiport circuit is separated into the connection circuit and the circuit elements. Based upon the digraph representation of the connection circuit, the scattering matrix of the connection circuit is computed from the fundamental cut set matrix and the fundamental loop matrix of the connection circuit. From this and the S-parameters of the circuit elements and the correlation spectra of the internal noise sources, the S-matrix of the multiport and the correlation matrix of its external equivalent noise sources may be determined directly. Circuit elements may be noisy two-terminal elements as well as noisy n-terminal elements and noisy multiports.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128833524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188329
P. Bourne, P. Arsene-Henry, P. Fellon, D. Pons
Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module.<>
{"title":"35 GHz and 60 GHz low noise HEMT MMIC amplifiers for civil applications","authors":"P. Bourne, P. Arsene-Henry, P. Fellon, D. Pons","doi":"10.1109/MWSYM.1992.188329","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188329","url":null,"abstract":"Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121926525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188331
C. Pan, Hsiao-Hua Wu, C. Chang
Two applications of a compact laser-diode-based photoconductive harmonic mixer were demonstrated. One of the unique features of this approach is that the photoconductor functions not only as an optical receiver but also as an electronic harmonic mixer. In the first experiment, two 10-GHz microwave oscillators were phase-locked together. The relative phase between the phase-locked signals can be continuously tuned over a whole cycle by an optical delay line. Phase-locking of the two oscillators with a frequency offset of 10 kHz was also demonstrated. In another set of experiments, the waveform of an optoelectronically phase-locked 12.01-GHz microwave signal and the waveform and spectrum of picosecond electrical pulses generated by a step recovery diode were measured by this technique. In comparison with previous electrooptical sampling or photoconductive sampling experiments using mainframe lasers, the principal advantages of the present system are compactness, a large number of sampling points, and the ability to display the waveform and spectrum on any convenient time scale or frequency range.<>
{"title":"Microwave applications of a laser-diode-based photoconductive harmonic mixer","authors":"C. Pan, Hsiao-Hua Wu, C. Chang","doi":"10.1109/MWSYM.1992.188331","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188331","url":null,"abstract":"Two applications of a compact laser-diode-based photoconductive harmonic mixer were demonstrated. One of the unique features of this approach is that the photoconductor functions not only as an optical receiver but also as an electronic harmonic mixer. In the first experiment, two 10-GHz microwave oscillators were phase-locked together. The relative phase between the phase-locked signals can be continuously tuned over a whole cycle by an optical delay line. Phase-locking of the two oscillators with a frequency offset of 10 kHz was also demonstrated. In another set of experiments, the waveform of an optoelectronically phase-locked 12.01-GHz microwave signal and the waveform and spectrum of picosecond electrical pulses generated by a step recovery diode were measured by this technique. In comparison with previous electrooptical sampling or photoconductive sampling experiments using mainframe lasers, the principal advantages of the present system are compactness, a large number of sampling points, and the ability to display the waveform and spectrum on any convenient time scale or frequency range.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116048523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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