Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188012
T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak
A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<>
{"title":"A double balanced 3-18 GHz resistive HEMT monolithic mixer","authors":"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak","doi":"10.1109/MWSYM.1992.188012","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188012","url":null,"abstract":"A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130121429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188096
S. Malone, A. Paolella, P. Herczfeld, T. Berceli
The basic motivation for the research presented here is the chip-level integration of microwave and photonic components. It is demonstrated that a microwave signal can be mixed with a modulated optical signal in a MESFET. A brief theoretical analysis of the IF term of the drain current is given in terms of the input signal parameters and device characteristics. Experimental results for two mixing configurations using the MESFET are shown, along with biasing conditions which maximize the IF response.<>
{"title":"MMIC compatible lightwave-microwave mixing techniques","authors":"S. Malone, A. Paolella, P. Herczfeld, T. Berceli","doi":"10.1109/MWSYM.1992.188096","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188096","url":null,"abstract":"The basic motivation for the research presented here is the chip-level integration of microwave and photonic components. It is demonstrated that a microwave signal can be mixed with a modulated optical signal in a MESFET. A brief theoretical analysis of the IF term of the drain current is given in terms of the input signal parameters and device characteristics. Experimental results for two mixing configurations using the MESFET are shown, along with biasing conditions which maximize the IF response.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125005828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188094
A. Seeds
Recent European work on components, subsystems, and applications of microwave optoelectronics is reviewed, with particular emphasis on areas, such as coherent techniques and the use of optical amplifiers, which are likely to have a strong impact on new system design. Microwave optoelectronic components capable of operation well into the millimeter-wave region have been developed to commercial availability by a number of European manufacturers. Optical amplifiers seem likely to make microwave bandwidth networks with excellent signal to noise ratio a practical reality. Techniques for the generation of coherent optical signals have advanced substantially, so that it seems likely that coherent processing will become the preferred choice for optical beamforming in phase array antennas and many other signal processing applications.<>
{"title":"Microwave opto-electronics in Europe","authors":"A. Seeds","doi":"10.1109/MWSYM.1992.188094","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188094","url":null,"abstract":"Recent European work on components, subsystems, and applications of microwave optoelectronics is reviewed, with particular emphasis on areas, such as coherent techniques and the use of optical amplifiers, which are likely to have a strong impact on new system design. Microwave optoelectronic components capable of operation well into the millimeter-wave region have been developed to commercial availability by a number of European manufacturers. Optical amplifiers seem likely to make microwave bandwidth networks with excellent signal to noise ratio a practical reality. Techniques for the generation of coherent optical signals have advanced substantially, so that it seems likely that coherent processing will become the preferred choice for optical beamforming in phase array antennas and many other signal processing applications.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129073111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188160
R. Perez, D. Hoppe
An electroformed X-band resonant ring has been constructed to conduct breakdown experiments with dielectric gases. The resonant ring is a tuned closed waveguide loop fed by a microwave power source, and is capable of power multiplication. The authors introduce the design and techniques employed in the fabrication of the resonant ring, and present gas breakdown results obtained using nitrogen and sulphur hexafluoride.<>
{"title":"A X-band resonant ring and gas breakdown experiments","authors":"R. Perez, D. Hoppe","doi":"10.1109/MWSYM.1992.188160","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188160","url":null,"abstract":"An electroformed X-band resonant ring has been constructed to conduct breakdown experiments with dielectric gases. The resonant ring is a tuned closed waveguide loop fed by a microwave power source, and is capable of power multiplication. The authors introduce the design and techniques employed in the fabrication of the resonant ring, and present gas breakdown results obtained using nitrogen and sulphur hexafluoride.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131549904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188024
T. Rozzi, G. Gerini, M. Righi
The authors derive the radiation spectrum of a slotline in full hybrid form. Its application to the practical problem of scattering by a transverse strip across the slot is demonstrated, producing detailed near-field and far-field distributions with a minimum of computational effort.<>
{"title":"Radiation modes of slotline with application to millimetric circuits","authors":"T. Rozzi, G. Gerini, M. Righi","doi":"10.1109/MWSYM.1992.188024","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188024","url":null,"abstract":"The authors derive the radiation spectrum of a slotline in full hybrid form. Its application to the practical problem of scattering by a transverse strip across the slot is demonstrated, producing detailed near-field and far-field distributions with a minimum of computational effort.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116780911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188314
S. A. Khan, J. Farmer, R. Gutmann, J. Borrego
A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<>
{"title":"In situ thickness monitor for conducting films","authors":"S. A. Khan, J. Farmer, R. Gutmann, J. Borrego","doi":"10.1109/MWSYM.1992.188314","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188314","url":null,"abstract":"A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117050084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188003
A. Dreher, R. Pregla
The method of lines (MOL) is extended to analyze radiating planar resonators by the use of absorbing boundary conditions. The complex frequency of a microstrip patch is computed and compared to results achieved by the integral equation method.<>
{"title":"Analysis of radiating planar resonators with the method of lines","authors":"A. Dreher, R. Pregla","doi":"10.1109/MWSYM.1992.188003","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188003","url":null,"abstract":"The method of lines (MOL) is extended to analyze radiating planar resonators by the use of absorbing boundary conditions. The complex frequency of a microstrip patch is computed and compared to results achieved by the integral equation method.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115338010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188331
C. Pan, Hsiao-Hua Wu, C. Chang
Two applications of a compact laser-diode-based photoconductive harmonic mixer were demonstrated. One of the unique features of this approach is that the photoconductor functions not only as an optical receiver but also as an electronic harmonic mixer. In the first experiment, two 10-GHz microwave oscillators were phase-locked together. The relative phase between the phase-locked signals can be continuously tuned over a whole cycle by an optical delay line. Phase-locking of the two oscillators with a frequency offset of 10 kHz was also demonstrated. In another set of experiments, the waveform of an optoelectronically phase-locked 12.01-GHz microwave signal and the waveform and spectrum of picosecond electrical pulses generated by a step recovery diode were measured by this technique. In comparison with previous electrooptical sampling or photoconductive sampling experiments using mainframe lasers, the principal advantages of the present system are compactness, a large number of sampling points, and the ability to display the waveform and spectrum on any convenient time scale or frequency range.<>
{"title":"Microwave applications of a laser-diode-based photoconductive harmonic mixer","authors":"C. Pan, Hsiao-Hua Wu, C. Chang","doi":"10.1109/MWSYM.1992.188331","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188331","url":null,"abstract":"Two applications of a compact laser-diode-based photoconductive harmonic mixer were demonstrated. One of the unique features of this approach is that the photoconductor functions not only as an optical receiver but also as an electronic harmonic mixer. In the first experiment, two 10-GHz microwave oscillators were phase-locked together. The relative phase between the phase-locked signals can be continuously tuned over a whole cycle by an optical delay line. Phase-locking of the two oscillators with a frequency offset of 10 kHz was also demonstrated. In another set of experiments, the waveform of an optoelectronically phase-locked 12.01-GHz microwave signal and the waveform and spectrum of picosecond electrical pulses generated by a step recovery diode were measured by this technique. In comparison with previous electrooptical sampling or photoconductive sampling experiments using mainframe lasers, the principal advantages of the present system are compactness, a large number of sampling points, and the ability to display the waveform and spectrum on any convenient time scale or frequency range.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116048523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188329
P. Bourne, P. Arsene-Henry, P. Fellon, D. Pons
Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module.<>
{"title":"35 GHz and 60 GHz low noise HEMT MMIC amplifiers for civil applications","authors":"P. Bourne, P. Arsene-Henry, P. Fellon, D. Pons","doi":"10.1109/MWSYM.1992.188329","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188329","url":null,"abstract":"Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121926525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188196
T. Crowe, W. Peatman, P. Wood, Xiaolei Liu
The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<>
{"title":"GaAs Schottky barrier diodes for THz applications","authors":"T. Crowe, W. Peatman, P. Wood, Xiaolei Liu","doi":"10.1109/MWSYM.1992.188196","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188196","url":null,"abstract":"The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123443117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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