Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188079
P. Nuchter, W. Menzel
A new concept for a millimeter (mm)-wave frequency divider is presented, as well as first results on its use in the 30-GHz range and in the 80-GHz range. The mm-wave frequency divider had a division ratio that was sufficiently high so that digital dividers could be used. The mm-wave divider was based on a combination of analog and digital components, and may easily be realized by using monolithically integrated circuits. The output spectra of the mm-wave frequency divider for input frequencies of 29.92, 30.4, and 30.88 GHz and for input frequencies of 76.6, 77.8, and 79 GHz are shown.<>
{"title":"A mm-wave frequency divider","authors":"P. Nuchter, W. Menzel","doi":"10.1109/MWSYM.1992.188079","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188079","url":null,"abstract":"A new concept for a millimeter (mm)-wave frequency divider is presented, as well as first results on its use in the 30-GHz range and in the 80-GHz range. The mm-wave frequency divider had a division ratio that was sufficiently high so that digital dividers could be used. The mm-wave divider was based on a combination of analog and digital components, and may easily be realized by using monolithically integrated circuits. The output spectra of the mm-wave frequency divider for input frequencies of 29.92, 30.4, and 30.88 GHz and for input frequencies of 76.6, 77.8, and 79 GHz are shown.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122506080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188052
P. Siegel, R. Dengler, I. Mehdi, W. Bishop, T. Crowe
The authors present recent performance data for a 200-GHz subharmonically pumped waveguide mixer using an antiparallel pair of planar air bridge type GaAs Schottky barrier diodes. The measured mixer noise and conversion loss were below those of the best reported whisker contacted or planar diode mixers using the subharmonic pump configuration. In addition, the required local oscillator power was as low as 3 mW for the unbiased diode pair, and significant local oscillator noise suppression was observed. The waveguide design was a prototype for 640 GHz and used a split-block rectangular waveguide with a 2:1 width to height ratio throughout.<>
{"title":"A 200 GHz planar diode subharmonically pumped waveguide mixer with state-of-the-art performance","authors":"P. Siegel, R. Dengler, I. Mehdi, W. Bishop, T. Crowe","doi":"10.1109/MWSYM.1992.188052","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188052","url":null,"abstract":"The authors present recent performance data for a 200-GHz subharmonically pumped waveguide mixer using an antiparallel pair of planar air bridge type GaAs Schottky barrier diodes. The measured mixer noise and conversion loss were below those of the best reported whisker contacted or planar diode mixers using the subharmonic pump configuration. In addition, the required local oscillator power was as low as 3 mW for the unbiased diode pair, and significant local oscillator noise suppression was observed. The waveguide design was a prototype for 640 GHz and used a split-block rectangular waveguide with a 2:1 width to height ratio throughout.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122621311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188002
C. Mroczkowski, W. Gwarek, T. Morawski, J. Modelski
Application of the vector two-dimensional FD-TD (finite-difference time-domain) method to the analysis of circular horn antennas is presented. An antenna should maintain axial symmetry of boundary conditions and can be arbitrarily shaped in two other directions, in the cylindrical coordinate system. The medium filling the antenna can be inhomogeneous. Modes of excitation of sinusoidal dependence on angle can be considered. A full-wave solution is obtained. An example of a circular horn antenna has been computed and compared with experimental data.<>
{"title":"Analysis of circular horn antennas using the FD-TD method","authors":"C. Mroczkowski, W. Gwarek, T. Morawski, J. Modelski","doi":"10.1109/MWSYM.1992.188002","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188002","url":null,"abstract":"Application of the vector two-dimensional FD-TD (finite-difference time-domain) method to the analysis of circular horn antennas is presented. An antenna should maintain axial symmetry of boundary conditions and can be arbitrarily shaped in two other directions, in the cylindrical coordinate system. The medium filling the antenna can be inhomogeneous. Modes of excitation of sinusoidal dependence on angle can be considered. A full-wave solution is obtained. An example of a circular horn antenna has been computed and compared with experimental data.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129726760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188321
A. Samelis, D. Pavlidis
The third-order intermodulation distortion (IMD3) mechanisms of HBTs (heterojunction bipolar transistors) are analyzed using Volterra series theory. The third-order nonlinear currents generated by the device nonlinearities are evaluated for this purpose. Second-harmonic loading is addressed in view of IMD3 optimization while, at the same time, maintaining high gain through conjugate matching at the fundamental frequency. It is shown that IMD3 depends on a complex process involving interactions between various nonlinear elements and is highly sensitive to C/sub bc/ generated nonlinear current. The interaction of the latter with the other HBT elements significantly affects the IMD3. Optimum IMD3 occurs at high second-harmonic reflection coefficients corresponding to open load conditions. An IMD3 improvement of up to 27 dBm can be obtained by proper loading.<>
{"title":"Analysis and optimization of third order intermodulation distortion mechanisms in AlGaAs/GaAs heterojunction bipolar transistors","authors":"A. Samelis, D. Pavlidis","doi":"10.1109/MWSYM.1992.188321","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188321","url":null,"abstract":"The third-order intermodulation distortion (IMD3) mechanisms of HBTs (heterojunction bipolar transistors) are analyzed using Volterra series theory. The third-order nonlinear currents generated by the device nonlinearities are evaluated for this purpose. Second-harmonic loading is addressed in view of IMD3 optimization while, at the same time, maintaining high gain through conjugate matching at the fundamental frequency. It is shown that IMD3 depends on a complex process involving interactions between various nonlinear elements and is highly sensitive to C/sub bc/ generated nonlinear current. The interaction of the latter with the other HBT elements significantly affects the IMD3. Optimum IMD3 occurs at high second-harmonic reflection coefficients corresponding to open load conditions. An IMD3 improvement of up to 27 dBm can be obtained by proper loading.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129959573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188115
J. Pedro, J. Perez
The contribution of the cross terms to the prediction of GaAs MESFET intermodulation load-pull behaviour can be important, and a method is presented for the complete experimental characterization of the drain-source current nonlinearities. An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET does not allow the common approach of splitting this nonlinear equivalent circuit element in two-voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to show that the cross terms of the Ids(Vgs,Vds) Taylor series expansion can give an important contribution to the prediction of a MESFET's intermodulation load-pull behaviour.<>
{"title":"An improved MESFET model for prediction of intermodulation load-pull characterization","authors":"J. Pedro, J. Perez","doi":"10.1109/MWSYM.1992.188115","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188115","url":null,"abstract":"The contribution of the cross terms to the prediction of GaAs MESFET intermodulation load-pull behaviour can be important, and a method is presented for the complete experimental characterization of the drain-source current nonlinearities. An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET does not allow the common approach of splitting this nonlinear equivalent circuit element in two-voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to show that the cross terms of the Ids(Vgs,Vds) Taylor series expansion can give an important contribution to the prediction of a MESFET's intermodulation load-pull behaviour.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128432534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188241
T. Nakagawa, T. Hirota, T. Ohira
A novel concept in sampling-phase/frequency detection for microwave quartz-lock oscillators is proposed, and its prototype is developed in a GaAs MMIC (monolithic microwave integrated circuit). It is found out experimentally that the proposed detector provides drastic improvement over conventional sampling-phase detectors in pull-in range. This novel circuit can detect both frequency and phase without any frequency dividers. The frequency comparison output can extend the pull-in range to the limit, which is equal to the reference frequency. This circuit is called the sampling phase/frequency comparator (SPFC). The first trial of the SPFC integration on a MMIC chip is described, with successful performances measured at Ku-band frequencies. The pull-in range was extended to about 10 time that of conventional approaches.<>
{"title":"A novel MMIC approach to sampling phase/frequency detection for microwave quartz-lock oscillators","authors":"T. Nakagawa, T. Hirota, T. Ohira","doi":"10.1109/MWSYM.1992.188241","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188241","url":null,"abstract":"A novel concept in sampling-phase/frequency detection for microwave quartz-lock oscillators is proposed, and its prototype is developed in a GaAs MMIC (monolithic microwave integrated circuit). It is found out experimentally that the proposed detector provides drastic improvement over conventional sampling-phase detectors in pull-in range. This novel circuit can detect both frequency and phase without any frequency dividers. The frequency comparison output can extend the pull-in range to the limit, which is equal to the reference frequency. This circuit is called the sampling phase/frequency comparator (SPFC). The first trial of the SPFC integration on a MMIC chip is described, with successful performances measured at Ku-band frequencies. The pull-in range was extended to about 10 time that of conventional approaches.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129542101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188208
M. Easton, R. Basset, D. Day, C. Hua, C. Chang, J. Wei
A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range.<>
{"title":"A 3.5 watt high efficiency GaAs FET amplifier for digital telephone communications","authors":"M. Easton, R. Basset, D. Day, C. Hua, C. Chang, J. Wei","doi":"10.1109/MWSYM.1992.188208","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188208","url":null,"abstract":"A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"402 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126676897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188251
J. Bracken, V. Raghavan, R. Rohrer
A novel method for simulating distributed elements is described. The asymptotic waveform evaluation (AWE) technique is used to compute a low-order approximation to the admittance matrix for a system of coupled lossy lines. The Y-matrix can serve as a macromodel for the lines, so that they can be simulated together with arbitrary (nonlinear) terminations. A major advantage of the proposed method is that it allows general distributed elements to be simulated in the time domain without using computationally expensive lumped models or numerical inverse transform techniques. In addition, a novel frequency-shifting technique is introduced which can lead to more accurate AWE approximations.<>
{"title":"Simulating distributed elements with asymptotic waveform evaluation","authors":"J. Bracken, V. Raghavan, R. Rohrer","doi":"10.1109/MWSYM.1992.188251","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188251","url":null,"abstract":"A novel method for simulating distributed elements is described. The asymptotic waveform evaluation (AWE) technique is used to compute a low-order approximation to the admittance matrix for a system of coupled lossy lines. The Y-matrix can serve as a macromodel for the lines, so that they can be simulated together with arbitrary (nonlinear) terminations. A major advantage of the proposed method is that it allows general distributed elements to be simulated in the time domain without using computationally expensive lumped models or numerical inverse transform techniques. In addition, a novel frequency-shifting technique is introduced which can lead to more accurate AWE approximations.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127025102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.188027
J. M. Butler, D. Goebel, R. Schumacher, J. Hyman, J. Santoru, R. Watkins, R. Harvey, F. Dolezal, R. Eisenhart, A. J. Schneider
The authors describe the operation and performance of a high-energy microwave source called the PASOTRON (plasma-assisted, slow-wave oscillator). The PASOTRON is a unique combination of a novel electron gun, and plasma-filled slow-wave structure which creates a source capable of generating 100- mu s-long RF pulses maintained at power levels of a few megawatts without the use of any magnetic focusing fields. A Hughes hollow-cathode-plasma electron gun is used to produce long, high-power beam pulses from which energy is efficiently extracted and converted into electromagnetic radiation. The authors present results which show that RF output power is in the 1-to-5 MW range, for RF pulse lengths up to 120 mu s from a PASOTRON tube designed to operate in the C-band frequency range. The integrated RF energy per pulse is up to 500 J, and the electron-beam to microwave-radiation power-conversion efficiency is approximately 20%. Instantaneous bandwidth measurements confirm that, for the long RF pulse duration, the PASOTRON's oscillation center frequency is maintained in a narrow line <3 MHz.<>
{"title":"PASOTRON high-energy microwave source","authors":"J. M. Butler, D. Goebel, R. Schumacher, J. Hyman, J. Santoru, R. Watkins, R. Harvey, F. Dolezal, R. Eisenhart, A. J. Schneider","doi":"10.1109/MWSYM.1992.188027","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.188027","url":null,"abstract":"The authors describe the operation and performance of a high-energy microwave source called the PASOTRON (plasma-assisted, slow-wave oscillator). The PASOTRON is a unique combination of a novel electron gun, and plasma-filled slow-wave structure which creates a source capable of generating 100- mu s-long RF pulses maintained at power levels of a few megawatts without the use of any magnetic focusing fields. A Hughes hollow-cathode-plasma electron gun is used to produce long, high-power beam pulses from which energy is efficiently extracted and converted into electromagnetic radiation. The authors present results which show that RF output power is in the 1-to-5 MW range, for RF pulse lengths up to 120 mu s from a PASOTRON tube designed to operate in the C-band frequency range. The integrated RF energy per pulse is up to 500 J, and the electron-beam to microwave-radiation power-conversion efficiency is approximately 20%. Instantaneous bandwidth measurements confirm that, for the long RF pulse duration, the PASOTRON's oscillation center frequency is maintained in a narrow line <3 MHz.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129302650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-06-01DOI: 10.1109/MWSYM.1992.187990
U. Mueller, P. So, W. Hoefer
The origin of the coarseness error in two-dimensional TLM (transmission line matrix) meshes is investigated, and a method for compensating the coarseness effect without increasing the computational expenditure is presented. The coarseness error can be eliminated by modifying the properties of the nodes situated at sharp corners or edges. The compensation is achieved by adding reactive stubs to the corner nodes. As a result, relatively coarse TLM meshes may be used to obtain highly accurate results. The efficiency and accuracy of this method are demonstrated by comparison with analytically exact solutions. The savings in computational expenditure are typically three orders of magnitude in 2D-TLM simulations.<>
{"title":"The compensation of coarseness error in 2D TLM modeling of microwave structures","authors":"U. Mueller, P. So, W. Hoefer","doi":"10.1109/MWSYM.1992.187990","DOIUrl":"https://doi.org/10.1109/MWSYM.1992.187990","url":null,"abstract":"The origin of the coarseness error in two-dimensional TLM (transmission line matrix) meshes is investigated, and a method for compensating the coarseness effect without increasing the computational expenditure is presented. The coarseness error can be eliminated by modifying the properties of the nodes situated at sharp corners or edges. The compensation is achieved by adding reactive stubs to the corner nodes. As a result, relatively coarse TLM meshes may be used to obtain highly accurate results. The efficiency and accuracy of this method are demonstrated by comparison with analytically exact solutions. The savings in computational expenditure are typically three orders of magnitude in 2D-TLM simulations.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114069288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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