Pub Date : 2023-01-01DOI: 10.21272/jnep.15(3).03016
Subhrasankha Ghosh, S. Mukherjee, S. Chattopadhyay, A. Das
Insulated gate bipolar transistor (IGBT) is a work element in modern power electronics converters. The ability of the IGBT transistor, which is utilised in power converter circuits, to block high voltages, is one of its most crucial features. Large-scale solar power generations are incorporated into the AC grid via voltage-source converters (VSC). Many other applications also utilise voltage-source converters (VSCs). IGBTs are an integral part of voltage-source converters. Fault in IGBT-based VSCs has an impact on the functionality of all VSC-based systems. So, the fault-proof operation of IGBT is highly desirable. This article presents a methodology to detect the premature IGBT breakdown fault (PIBDF) in a photovoltaic (PV)-grid-connected three-phase three-level Voltage Source Converter (VSC). The work has been done using an analysis that is based on the Fast Fourier Transform (FFT) technique applied to the output phase voltage of VSC. Then for different fault percentage values, the effects on the DC as well as the fundamental frequency component and harmonic distortions have been investigated. Some specific features of the subharmonic components have been studied under the normal and faulty conditions of the IGBT. Further study shows that there are few features suitable for fault identification.
{"title":"Premature Breakdown Identification in Photovoltaic Array Fed IGBT-based Voltage Source Converter","authors":"Subhrasankha Ghosh, S. Mukherjee, S. Chattopadhyay, A. Das","doi":"10.21272/jnep.15(3).03016","DOIUrl":"https://doi.org/10.21272/jnep.15(3).03016","url":null,"abstract":"Insulated gate bipolar transistor (IGBT) is a work element in modern power electronics converters. The ability of the IGBT transistor, which is utilised in power converter circuits, to block high voltages, is one of its most crucial features. Large-scale solar power generations are incorporated into the AC grid via voltage-source converters (VSC). Many other applications also utilise voltage-source converters (VSCs). IGBTs are an integral part of voltage-source converters. Fault in IGBT-based VSCs has an impact on the functionality of all VSC-based systems. So, the fault-proof operation of IGBT is highly desirable. This article presents a methodology to detect the premature IGBT breakdown fault (PIBDF) in a photovoltaic (PV)-grid-connected three-phase three-level Voltage Source Converter (VSC). The work has been done using an analysis that is based on the Fast Fourier Transform (FFT) technique applied to the output phase voltage of VSC. Then for different fault percentage values, the effects on the DC as well as the fundamental frequency component and harmonic distortions have been investigated. Some specific features of the subharmonic components have been studied under the normal and faulty conditions of the IGBT. Further study shows that there are few features suitable for fault identification.","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68046165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(4).04005
P. William, M. A. Jawale, A. B. Pawar, Sachin K. Korde, Dhananjay S. Rakshe, Neeta Deshpande
Renewable
{"title":"Investigation of the Electronic and Optical Properties of Nanostructured Glasses and Composites","authors":"P. William, M. A. Jawale, A. B. Pawar, Sachin K. Korde, Dhananjay S. Rakshe, Neeta Deshpande","doi":"10.21272/jnep.15(4).04005","DOIUrl":"https://doi.org/10.21272/jnep.15(4).04005","url":null,"abstract":"Renewable","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135783322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(4).04033
D. Sergeyev, K. Shunkeyev, N. Zhanturina, A. L. Solovjov
Within the framework of the density functional theory and methods of molecular dynamics, the process of destruction of a silicon p-n junction at the influence of an electromagnetic pulse (thermal effect) is considered. With an increase in the amplitude of the electromagnetic pulse, a nonlinearity of the mobility of quasiparticles arises and impact ionization processes occur, leading to the formation of various defects in the crystal lattice of the semiconductor. The evolution of the occurrence of point defects in a semiconductor by thermal deformation, as well as a further increase in their concentration, is shown. It is demonstrated that the primary passage of an electromagnetic pulse generates defects in a defect-free crystal. Further thermal impact of the pulse leads to an increase in the deviation of atoms, leading to the accumulation of defects and the destruction of the structure. With an increase in temperature, the p-n junction loses its rectifying properties and an instantaneous increase in the magnitude of the reverse current is observed due to the occurrence of an ionization current, which coincides in direction with the saturation current. It is revealed that thermal deformation significantly distorts the p-n junction profile. It was found that the destruction of the semiconductor structure occurs in the defect-free part of the crystal, and the defects stimulate destruction. In semiconductors doped with Li or Sr, the destruction time of the p-n junction increases due to the occupation of mobile Li or Sr ions by the formed silicon vacancies during the thermal action of the pulse. The results obtained can be useful in the development of semiconductor structures resistant to external influences of an electromagnetic pulse.
{"title":"Modeling the Destruction of the p-n Junction by Electromagnetic Pulses","authors":"D. Sergeyev, K. Shunkeyev, N. Zhanturina, A. L. Solovjov","doi":"10.21272/jnep.15(4).04033","DOIUrl":"https://doi.org/10.21272/jnep.15(4).04033","url":null,"abstract":"Within the framework of the density functional theory and methods of molecular dynamics, the process of destruction of a silicon p-n junction at the influence of an electromagnetic pulse (thermal effect) is considered. With an increase in the amplitude of the electromagnetic pulse, a nonlinearity of the mobility of quasiparticles arises and impact ionization processes occur, leading to the formation of various defects in the crystal lattice of the semiconductor. The evolution of the occurrence of point defects in a semiconductor by thermal deformation, as well as a further increase in their concentration, is shown. It is demonstrated that the primary passage of an electromagnetic pulse generates defects in a defect-free crystal. Further thermal impact of the pulse leads to an increase in the deviation of atoms, leading to the accumulation of defects and the destruction of the structure. With an increase in temperature, the p-n junction loses its rectifying properties and an instantaneous increase in the magnitude of the reverse current is observed due to the occurrence of an ionization current, which coincides in direction with the saturation current. It is revealed that thermal deformation significantly distorts the p-n junction profile. It was found that the destruction of the semiconductor structure occurs in the defect-free part of the crystal, and the defects stimulate destruction. In semiconductors doped with Li or Sr, the destruction time of the p-n junction increases due to the occupation of mobile Li or Sr ions by the formed silicon vacancies during the thermal action of the pulse. The results obtained can be useful in the development of semiconductor structures resistant to external influences of an electromagnetic pulse.","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135699110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(2).02013
A. Vasiljev, T. Vasyliev, R. Zhelezniak, V. Kryvytskyi, T. Р. Doroshenko
{"title":"Hydrogen Treatment of Surface Layer of a Gold Film on Glass","authors":"A. Vasiljev, T. Vasyliev, R. Zhelezniak, V. Kryvytskyi, T. Р. Doroshenko","doi":"10.21272/jnep.15(2).02013","DOIUrl":"https://doi.org/10.21272/jnep.15(2).02013","url":null,"abstract":"","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68044877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(2).02016
O. Boultif, B. Zaidi, S. Roguai, A. Mehdaoui, F. Diab, T. Bouarroudj, K. Kamli, Z. Hadef, C. Shekhar
{"title":"Computational Study of the Photovoltaic Performance of CdS/Si Solar Cells: Anti-reflective Layers Effect","authors":"O. Boultif, B. Zaidi, S. Roguai, A. Mehdaoui, F. Diab, T. Bouarroudj, K. Kamli, Z. Hadef, C. Shekhar","doi":"10.21272/jnep.15(2).02016","DOIUrl":"https://doi.org/10.21272/jnep.15(2).02016","url":null,"abstract":"","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68044946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(1).01024
P. R. Bagade, A. Pawar, R. K. Kamat, S. A. Shinde
{"title":"Modeling and Optimization of CMOS Compatible Various ZnO/SiO2/Si Multilayer Structure for SAW Devices Using FEM","authors":"P. R. Bagade, A. Pawar, R. K. Kamat, S. A. Shinde","doi":"10.21272/jnep.15(1).01024","DOIUrl":"https://doi.org/10.21272/jnep.15(1).01024","url":null,"abstract":"","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68044999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(1).01026
E. Tarik, Najiba El Amrani El Idrissi, D. Kumutha, S. Jeevitha, Sudipta Das
{"title":"A Compact Multi-resonant Wide Band MIMO Antenna for 5G Communication Systems at mm-wave Band","authors":"E. Tarik, Najiba El Amrani El Idrissi, D. Kumutha, S. Jeevitha, Sudipta Das","doi":"10.21272/jnep.15(1).01026","DOIUrl":"https://doi.org/10.21272/jnep.15(1).01026","url":null,"abstract":"","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68045019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(2).02025
Km. Kanchan, A. Sahu, S. Yadav
{"title":"The Improved Performance with Reduction in Toxicity in CIGS Solar Cell Using Ultra-thin BaSi2 BSF Layer","authors":"Km. Kanchan, A. Sahu, S. Yadav","doi":"10.21272/jnep.15(2).02025","DOIUrl":"https://doi.org/10.21272/jnep.15(2).02025","url":null,"abstract":"","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68045757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21272/jnep.15(3).03031
P. Raja, P. Chander, B. Faisal, V. Prakash
The proposed work focuses on the outcomes brought about by the inclusion of Charge Plasma (CP) concept in a cylindrical Nanowire Field Effect Transistor (NWFET) for sub 10 nm. The Gate is surrounded by an oxide layer, which is further surrounded by a channel layer. The concept of charge-plasma is introduced in the channel by surrounding an oxide layer around the channel, and a different work functions metal layer around the oxide. The performance of device parameters like the electric potential and transfer characteristics have been described. Analysis of Threshold Voltage, drain current and I ON / I OFF ratio have been carried for 35 nm and 10 nm channel length. Sentaurus Technology Computer Aided Design (TCAD) has been used to evaluate and analyze this device for sub 10 nm. To calculate tunneling and recombination, the TCAD simulates the Lombardi mobility model, Shockley-Read-Hall (SRH), Density Gradient model, and Auger recombination models. This device generates twice times more output current by using the CP-based NWFET as compared to the conventional NWFET. The parasitic leakage has been reduced and the I ON /I OFF ratio has been stabilized. Also, the scalability is enhanced, and the Schottky junction's high vertical field lowers the lateral coupling between the source and drain field lines. This can be used to implement in memory devices such as Inverter, 6T SRAM
提出的工作重点是将电荷等离子体(CP)概念包含在10纳米以下的圆柱形纳米线场效应晶体管(NWFET)中所带来的结果。栅极被氧化层包围，氧化层进一步被沟道层包围。电荷等离子体的概念是通过在通道周围环绕氧化层而引入的，并且在氧化物周围有一个不同的功函数金属层。描述了电势和传递特性等器件参数的性能。在35 nm和10 nm的通道长度下，对阈值电压、漏极电流和I ON / I OFF比进行了分析。利用Sentaurus Technology计算机辅助设计(TCAD)对该器件进行了10nm以下的评价和分析。为了计算隧道和复合，TCAD模拟了Lombardi迁移率模型、Shockley-Read-Hall (SRH)模型、密度梯度模型和Auger复合模型。与传统NWFET相比，该器件通过使用基于cp的NWFET产生两倍以上的输出电流。寄生泄漏减少，I - ON /I - OFF比稳定。此外，可扩展性也得到了增强，肖特基结的高垂直场降低了源极和漏极场线之间的横向耦合。这可以用来实现在存储器器件，如逆变器，6T SRAM
{"title":"Performance Analysis of Charge-plasma Based Doping less Nanowire Field Effect Transistor","authors":"P. Raja, P. Chander, B. Faisal, V. Prakash","doi":"10.21272/jnep.15(3).03031","DOIUrl":"https://doi.org/10.21272/jnep.15(3).03031","url":null,"abstract":"The proposed work focuses on the outcomes brought about by the inclusion of Charge Plasma (CP) concept in a cylindrical Nanowire Field Effect Transistor (NWFET) for sub 10 nm. The Gate is surrounded by an oxide layer, which is further surrounded by a channel layer. The concept of charge-plasma is introduced in the channel by surrounding an oxide layer around the channel, and a different work functions metal layer around the oxide. The performance of device parameters like the electric potential and transfer characteristics have been described. Analysis of Threshold Voltage, drain current and I ON / I OFF ratio have been carried for 35 nm and 10 nm channel length. Sentaurus Technology Computer Aided Design (TCAD) has been used to evaluate and analyze this device for sub 10 nm. To calculate tunneling and recombination, the TCAD simulates the Lombardi mobility model, Shockley-Read-Hall (SRH), Density Gradient model, and Auger recombination models. This device generates twice times more output current by using the CP-based NWFET as compared to the conventional NWFET. The parasitic leakage has been reduced and the I ON /I OFF ratio has been stabilized. Also, the scalability is enhanced, and the Schottky junction's high vertical field lowers the lateral coupling between the source and drain field lines. This can be used to implement in memory devices such as Inverter, 6T SRAM","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68046365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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