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Tunable higher-order non-Hermitian skin effect in the SSH topolectrical circuits. SSH拓扑电路中可调谐的高阶非厄米集肤效应。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc35b
Lebin Wang, Wei Lin, Banxian Ruan, Yuanjiang Xiang, Xiaoyu Dai

Non-Hermitian systems reveal a wide range of fascinating physical phenomena beyond those found in Hermitian systems, drawing significant interest. Among these phenomena, the non-Hermitian skin effect (NHSE) is particularly notable. This effect enables the bulk states to collapse toward the boundaries and manifest as localized states. In this study, we report an experimental realization of a tunable higher-order NHSE in the Su-Schrieffer-Heeger (SSH) topolectrical circuits. Our experiments were conducted on specially designed one-dimensional and two-dimensional SSH tight-binding circuit networks. Two types of NHSEs with distinct angular localized modes (the diagonal distributed topological-skin mode and the isolated skin-skin angular mode) have been confirmed theoretically and experimentally. By controlling operational amplifiers and other electronic components, we could predict and tunable the skin effect modes in varying dimensions. The tunable NHSEs can be applied to guide waves into target regions, which can offer a number of valuable potential applications.

非厄米系统揭示了在厄米系统中发现的各种迷人的物理现象,引起了人们的极大兴趣。在这些现象中,非厄米集肤效应(NHSE)尤为显著。这种效应使体态向边界坍缩,表现为局域态。在这项研究中,我们报告了在Su-Schrieffer-Heeger (SSH)拓扑电路中可调谐高阶NHSE的实验实现。我们的实验是在专门设计的一维和二维SSH紧密结合电路网络上进行的。两种具有不同角度局域模式的nhse(对角分布拓扑-皮肤模式和孤立皮肤-皮肤角模式)已经得到了理论和实验的证实。通过控制运算放大器和其他电子元件,我们可以在不同的维度上预测和调节趋肤效应模式。可调谐的nhse可用于引导波进入目标区域,这可以提供许多有价值的潜在应用。
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引用次数: 0
Unraveling the topological phase in Zintl semiconductors RbZn4X3(X = P, As) through band engineering. 利用能带工程揭示Zintl半导体RbZn4X3 (X=P, As)的拓扑相。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc17e
Ramesh Kumar, Rajesh Kumar, Antik Sihi, Mukhtiyar Singh

We report the topological phase transition (TPT) in compounds of relatively less explored Zintl family RbZn4X3(X = P, As) viafirst-principlescalculation. These intermetallic compounds have already been experimentally synthesized in aKCu4S3-typetetragonal structure (P4/mmm) and reported to have a topologically trivial semimetallic nature with a direct band gap. We thoroughly studied the electronic structure, stability of RbZn4X3(X = P, As) and demonstrated the TPTs in these materials with external applied pressure and epitaxial strain. The dynamical and mechanical stabilities of these compounds are verified through phonon dispersion and Born stability criteria at ambient and TPT pressure/strain. A topologically non-trivial phase in RbZn4P3(RbZn4As3) is observed at 45 GPa (38 GPa) of hydrostatic pressure and 10% (8%) of epitaxial strain. This non-trivial phase is identified by band inversion betweenZn-sandP/As-pzorbitalsin the bulk band structure of these materials which is further confirmed using the surface density of states and Fermi arc contour in(001)-plane. The ℤ2topological invariants (ν0; ν1ν2ν3) for these materials are calculated using the product of parities of all filled bands (Kane and Mele model) and the evolution of Wannier charge centers (Wilson loop method). The change in values of (ν0; ν1ν2ν3) from (0; 000) to (1; 000), at the particular values of pressure and strain, is another signature of the TPT in these materials.

我们通过第一性原理计算报道了相对较少探索的Zintl族RbZn4X3 (X=P, As)化合物的拓扑相变。这些金属间化合物已经在实验中以kcu4s3型四方结构(P4/mmm)合成,并且据报道具有拓扑平凡的半金属性质,具有直接带隙。我们深入研究了RbZn4X3 (X=P, As)的电子结构和稳定性,并证明了这些材料在外加压力和外延应变下的拓扑相变。通过声子色散在所有拓扑相变压力和应变值下验证了这些化合物的动态稳定性。在45 GPa (38 GPa)的静水压力和10%(8%)的外延应变下,RbZn4P3 (RbZn4As3)中出现了拓扑非平凡相。在这些材料的体带结构中,通过Zn-s轨道和P/ as - pzz轨道之间的能带反转,进一步通过态的表面密度和(001)平面上的费米弧轮廓线证实了这一非trivial相。2拓扑不变量(ν0;ν1ν2ν3)利用所有填充能带的奇偶积(Kane和Mele模型)和万尼尔电荷中心的演化(Wilson环法)计算了这些材料的ν1ν2ν3)。(ν0;ν1ν2ν3)从(0;000)到(1000),在特定的压力和应变值下,是这些材料中拓扑相变的另一个特征。 。
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引用次数: 0
Hysteresis and pyroelectric behaviour at isomorphic transition in green CsSnI3. 绿色CsSnI3在同构跃迁中的迟滞和热释电行为。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adbead
Prem C Bharti, Priyanka A Jha, Pardeep K Jha, Prabhakar Singh

Lead-free perovskite halide CsSnI3has emerged as a promising material for optoelectronic applications due to its direct bandgap (1.3-1.4 eV), high charge carrier mobility, and strong visible-spectrum absorption. Among its polymorphs, the green phase, with a favorable bandgap of ∼1.24 eV, demonstrates enhanced structural stability and resistance to phase degradation under ambient conditions. In this study, we investigate the green polymorph of CsSnI3and observe pyroelectric behavior, indicative of ferroelectric-like properties despite its globally centrosymmetric (Pa3-) cubic structure. Utilizing Piezo-force microscopy, dielectric measurements, impedance spectroscopy, and Raman spectroscopy, we identified local non-centrosymmetry influencing hysteresis and conduction properties. Impedance spectroscopy further reveals the interaction of grains and grain boundaries under a low AC electric field, both before and after light exposure and poling. A reduction in relaxation time with increasing temperature in poled samples is observed, while the combined effects of light exposure and poling result in an increased relaxation time. Our results indicate that local non-centrosymmetry plays a critical role in influencing hysteresis and conduction behavior. These findings highlight the importance of phase transitions and vibrational mode dynamics in optimizing the performance of CsSnI3-based devices, paving the way for their broader application in advanced optoelectronic technologies.

无铅钙钛矿卤化物{CsSnI_3}由于其直接带隙(1.3-1.4 eV)、高载流子迁移率和强可见光谱吸收而成为光电子应用的一种有前途的材料。在其多晶态中,绿色相具有sim 1.24 eV的良好带隙,在环境条件下表现出更强的结构稳定性和抗相降解能力。在这项研究中,我们研究了{CsSnI_3}的绿色多晶,并观察了热释电行为,表明尽管其具有全局中心对称(Pa overline{3})立方结构,但仍具有类似铁电性。利用压电显微镜、介电测量、阻抗光谱和拉曼光谱,我们确定了局部非中心对称性影响磁滞和传导特性。阻抗谱进一步揭示了在低交流电场作用下,光照和极化前后晶粒和晶界的相互作用。观察到极化样品的弛豫时间随温度升高而减少,而光照和极化的综合效应导致弛豫时间增加。我们的研究结果表明,局部非中心对称在影响磁滞和传导行为中起着关键作用。这些发现强调了相变和振动模式动力学在优化基于cssni_3的器件性能中的重要性,为其在先进光电技术中的广泛应用铺平了道路。机理和I-V滞回。本研究强调,振动模式的局部改变显著影响钙钛矿卤化物的电流-电压滞回和传导行为,表明在全局中心对称的{CsSnI_3}中存在局部非中心对称。{}
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引用次数: 0
On-surface C-C coupling reactivity of carbon atoms in halogenated azulene. 卤代氮杂烯中碳原子的表面C-C偶联反应性。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc35c
Wenxun Feng, Yanbo Li, Jianmin Huang, Junlong Ma, Xisha Zhang, Deqing Zhang, Qitang Fan, Bing Wang

Azulene molecule, consisting of a pair of five and seven-membered rings, represents a promising precursor for the on-surface synthesis of nonbenzenoid, nonalternant carbon nanostructures with exotic properties. However, controlling the selective C-C coupling between azulene molecules remains elusive, undermining the structural uniformity of the attained carbon nanostructures. Here, we report that the on-surface C-C coupling reactivity of different carbon atom sites in azulene relies on the spatial distribution of its frontier orbitals. By performing surface reactions of a tribrominated azulene molecule on Au(111), the probability of C-C coupling between carbon atoms at different sites of azulene has been revealed by scanning tunneling microscopy and non-contact atomic force microscopy. These findings are in accordance with the density functional theory-calculated energy barriers for the corresponding C-C coupling reaction steps.

Azulene分子由一对五元环和七元环组成,是一种很有前途的前驱体,用于表面合成具有奇异性质的非苯类、非交替碳纳米结构。然而,控制azulene分子之间的选择性C-C偶联仍然是难以捉摸的,这破坏了所获得的碳纳米结构的结构均匀性。本文报道了azulene中不同碳原子位置的表面C-C偶联反应性取决于其前沿轨道的空间分布。 ;通过三溴化azulene分子在Au(111)上的表面反应,利用扫描隧道显微镜和非接触原子力显微镜揭示了azulene不同位置碳原子之间C-C偶联的概率。这些发现与dft计算的相应C-C偶联反应步骤的能垒一致。偶联反应步骤。 。
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引用次数: 0
Defects in oxide ultrathin films and 2D materials. 氧化物超薄膜和二维材料中的缺陷。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-28 DOI: 10.1088/1361-648X/adc05f
Falko P Netzer, Svetlozar Surnev

Defects, that are irregularities in crystal lattices, create special sites or regions of particular geometry, electronic structure and activity that influence the physical and chemical behavior of the materials in a significant way. Here we examine published work on defects in two-dimensional (2D) oxide systems. The latter have attracted interest and significance in many areas of modern science and technology in recent years. The defects are classified according to their dimensionality: point defects, line defects and 2D specific topological defects are considered. Key features of the different defect types are illustrated and discussed with selected prototypical examples.

缺陷,即晶格中的不规则性,产生特殊的位置或区域,具有特殊的几何形状、电子结构和活性,以一种重要的方式影响材料的物理和化学行为。在这里,我们检查在二维(2D)氧化物系统缺陷发表的工作。近年来,后者在现代科学技术的许多领域引起了人们的兴趣和意义。根据缺陷的维数对缺陷进行分类:考虑点缺陷、线缺陷和二维特定拓扑缺陷。不同缺陷类型的关键特征用选定的原型例子进行了说明和讨论。 。
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引用次数: 0
Signatures of magnon-phonon coupling in frustrated double perovskite square lattices. 受挫双钙钛矿方形晶格中磁振子-声子耦合的特征。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-28 DOI: 10.1088/1361-648X/adc0da
Shalini Badola, Aprajita Joshi, Akriti Singh, Surajit Saha

Low-dimensional frustrated magnetic square networks feature a variety of unconventional phases with novel emergent excitations. Often these excitations are intertwined and manifest into intriguing phenomena, an area that has remained largely unexplored in square-lattice systems, especially, double perovskites (A2BB'O6). In this study, we explore these interactions between the fundamental excitations such as phonons and magnons in square-lattice Sr2CuTeO6, Sr2CuWO6, and Ba2CuWO6isostructural double perovskites that exhibit both short-ranged (Tmax) as well as long-ranged Néel antiferromagnetic (TN) transitions. Our Raman measurements at variable temperatures reveal an intriguing broad peak (identified as 2-magnon (2M)) surviving beyondTmaxfor W-based compositions contrary to the Te-based system, suggesting a key role of diamagnetic B'-site cation on their magnetism. The thermal response of 2M intriguingly shows signatures of correlation with phonons and control over their anharmonicity, depicting magnon-phonon interaction. Further, a few phonons exhibit anomalies across the magnetic transitions implying the presence of spin-phonon coupling. In particular, the phonon modes at ∼194 cm-1of Sr2CuTeO6and ∼168 cm-1of Sr2CuWO6, that show a strong correlation with the 2M, exhibit the strongest spin-phonon coupling suggesting their roles in mediating magnon-phonon interactions in these systems.

低维受挫磁方网具有多种具有新颖涌现激励的非常规相。通常这些激发是交织在一起的,并表现为有趣的现象,这是一个在方形晶格系统中尚未探索的领域,特别是双钙钛矿(A2BB O6)。在这项研究中,我们探索了方形晶格Sr2CuTeO6、Sr2CuWO6和Ba2CuWO6等双钙钛矿中声子和磁振子等基本激发之间的相互作用,这些激发表现出短程(TS)和远程nsamel反铁磁(TN)跃迁。我们在可变温度下的拉曼测量结果显示,与基于te的体系相反,w基组合物在tss之外存在一个有趣的宽峰(确定为2-磁振子(2M)),这表明抗磁性的B - 位点阳离子对其磁性起关键作用。有趣的是,2M的热响应显示了与声子相关的特征和对其非谐波的控制,描绘了磁子-声子相互作用。此外,一些声子在磁跃迁中表现出异常,这意味着自旋声子耦合的存在。特别是Sr2CuTeO6的~ 194 cm-1和Sr2CuWO6的~ 168 cm-1声子模式,与2M有很强的相关性,表现出最强的自旋-声子耦合,表明它们在这些系统中介导了磁子-声子相互作用。 。
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引用次数: 0
Recent progress of flexible electrospun nanofibers based triboelectric nanogenerators for self-powered electronics. 自供电电子用挠性静电纺纳米纤维摩擦纳米发电机的研究进展。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-28 DOI: 10.1088/1361-648X/adbfed
Han Li, Ziteng Xu, Jiaxun Zhang, Saisai Li, Shuoze Li, Xingwei Chen, Lijun Lu, Zhifeng Pan, Yanchao Mao

The depletion of fossil fuels and the environmental impact of chemical batteries, coupled with the rapid proliferation of portable electronic devices and the Internet of Things, have created an urgent demand for high-performance, lightweight, and sustainable energy systems. Flexible triboelectric nanogenerators (TENGs) have emerged as a promising technology for powering self-sufficient devices, offering advantages such as simple structure, flexibility, low cost, and environmental adaptability. In particular, electrospun nanofiber-based TENGs stand out due to their enhanced surface area, superior charge collection capabilities, and improved mechanical durability. This review presents a comprehensive overview of recent advancements in electrospun nanofiber-based TENGs, focusing on material selection, structural design, fabrication techniques, and their integration into applications ranging from self-powered sensors to wearable electronics. Furthermore, the review discusses the challenges and future directions in optimizing the performance and scalability of TENGs to meet the growing demands of next-generation, energy-efficient technologies. It is hoped that this review will help researchers to gain a deeper understanding of this field and promote its development to a new stage.

化石燃料的消耗和化学电池对环境的影响,再加上便携式电子设备和物联网(IoT)的迅速普及,对高性能、轻量化和可持续能源系统产生了迫切的需求。柔性摩擦电纳米发电机(TENGs)具有结构简单、灵活、成本低、环境适应性强等优点,是一种很有前途的为自给自足设备供电的技术。特别是,基于电纺丝纳米纤维的teng因其增强的表面积,优越的电荷收集能力和改进的机械耐久性而脱颖而出。本文综述了基于电纺纳米纤维的纳米材料的最新进展,重点介绍了材料选择、结构设计、制造技术及其在自供电传感器和可穿戴电子产品等领域的应用。此外,本文还讨论了优化TENGs性能和可扩展性以满足下一代节能技术日益增长的需求的挑战和未来方向。希望本文的综述能够帮助研究者对这一领域有更深入的了解,并推动其发展到一个新的阶段。
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引用次数: 0
Robust half-metallic properties in two-dimensional CuCr2Se2X2(X = Cl, Br, I). 二维CuCr₂Se₂X₂(X = Cl, Br, I)中稳定的半金属性质。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-28 DOI: 10.1088/1361-648X/adbeb0
Haimei Zhou, Yujing Guo, Shuai Liu, Yiran Peng, Wenhui Wan, Yong Liu, Yanfeng Ge

In recent years, the rapid development of two-dimensional (2D) magnetic materials has revolutionized the field of spintronics, driven by their unique ability to combine magnetism and electronic functionality at the atomic scale. Here, we investigate the monolayer CuCr2Se2X2(X = Cl, Br, I), which exhibit robust ferromagnetic (FM) behavior and half-metallicity with 100% spin polarization. The strong FM coupling, mediated by superexchange interactions, is rooted in the unique electronic structure of the Crd-orbitals. Our findings reveal high Curie temperatures (TC) exceeding room temperature, with the Br variant achieving a remarkable 586 K. These exceptional properties, including the ability to modulate exchange interactions through strain engineering, highlight CuCr2Se2X2as a versatile platform for flexible, high-performance spintronic devices, paving the way for advancements in next-generation electronic applications.

近年来,由于二维磁性材料在原子尺度上结合磁性和电子功能的独特能力,其快速发展彻底改变了自旋电子学领域。在这里,我们研究了单层CuCr2Se2X2 (X = Cl, Br, I),它具有强大的铁磁(FM)行为和100%自旋极化的半金属丰度。由超交换相互作用介导的强调频耦合植根于Cr - d轨道独特的电子结构。我们的发现揭示了高居里温度(TC)超过室温,其中Br变体达到了惊人的586 K。这些特殊的特性,包括通过应变工程调制交换相互作用的能力,突出了CuCr2Se2X2作为灵活、高性能自旋电子器件的通用平台,为下一代电子应用的进步铺平了道路。
{"title":"Robust half-metallic properties in two-dimensional CuCr<sub>2</sub>Se<sub>2</sub>X<sub>2</sub>(X = Cl, Br, I).","authors":"Haimei Zhou, Yujing Guo, Shuai Liu, Yiran Peng, Wenhui Wan, Yong Liu, Yanfeng Ge","doi":"10.1088/1361-648X/adbeb0","DOIUrl":"10.1088/1361-648X/adbeb0","url":null,"abstract":"<p><p>In recent years, the rapid development of two-dimensional (2D) magnetic materials has revolutionized the field of spintronics, driven by their unique ability to combine magnetism and electronic functionality at the atomic scale. Here, we investigate the monolayer CuCr<sub>2</sub>Se<sub>2</sub>X<sub>2</sub>(X = Cl, Br, I), which exhibit robust ferromagnetic (FM) behavior and half-metallicity with 100% spin polarization. The strong FM coupling, mediated by superexchange interactions, is rooted in the unique electronic structure of the Cr<i>d</i>-orbitals. Our findings reveal high Curie temperatures (TC) exceeding room temperature, with the Br variant achieving a remarkable 586 K. These exceptional properties, including the ability to modulate exchange interactions through strain engineering, highlight CuCr<sub>2</sub>Se<sub>2</sub>X<sub>2</sub>as a versatile platform for flexible, high-performance spintronic devices, paving the way for advancements in next-generation electronic applications.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143597241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extended Kohler's scaling and Isosbestic point in the charge density wave state of 1T-VSe2. 扩展了1T-VSe2电荷密度波态的Kohler标度和等吸点。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-28 DOI: 10.1088/1361-648X/adc6e4
Sonika Bagga, Sunil Gangwar, Pankaj Kumar, Arghya Taraphder, C S Yadav

1T-VSe2is a narrow band transition metal chalcogenide that shows charge density wave (CDW) state below TCDW= 110 K. Here, we have explored the relevance of Kohler's rule and the thermal transport properties of VSe2across the CDW state in the presence of magnetic field. The magnetoresistance (MR) follows Kohler's rule above TCDW, while an extended Kohler's rule is employed below TCDW. Interestingly, we observed an anomaly in MR around T ∼ 20 K, below which MR value decreases on lowering temperature. This anomaly is also reflected in the slope (κ) of Kohler's plots and the relative change in the thermal excitation induced carrier density (nT). Despite a strong magnetic field of 14 Tesla, the TCDWremains largely unaffected in both electrical resistivity (ρ(T)) and Seebeck coefficient (S), although the application of magnetic field does enhance the peak intensity of S around T ∼ 60 K. The crossover of S curves measured at different magnetic fields at T ∼ 20 K suggests the existence of a novel feature within the CDW state of VSe2i.e., the presence of a locally exact isosbestic point.

1t - vse2是一种窄带过渡金属硫族化合物,在TCDW= 110 K以下呈现电荷密度波(CDW)状态。在这里,我们探索了Kohler规则与vse2在磁场存在下跨CDW态的热输运性质的相关性。磁阻(MR)在TCDW以上遵循Kohler规则,在TCDW以下采用扩展的Kohler规则。有趣的是,在T ~ 20 K附近,我们观察到MR值异常,在此以下,MR值随着温度的降低而降低。这种异常也反映在Kohler图的斜率(κ)和热激发诱导载流子密度(nT)的相对变化上。尽管有14特斯拉的强磁场,但tcdw在电阻率(ρ(T))和塞贝克系数(S)方面基本上没有受到影响,尽管磁场的应用确实在T ~ 60 K左右增强了S的峰值强度。在T ~ 20 K不同磁场下测量的S曲线交叉表明,在vse2的CDW态中存在一个新的特征,即:,局部精确等吸点的存在。
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引用次数: 0
Positron stopping in multilayer materials. 多层材料中的正电子停止。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2025-03-28 DOI: 10.1088/1361-648X/adc062
A C L Jones, T Chung, F A Selim

Positron annihilation spectroscopy provides a sensitive toolset for defect characterization. In beam based studies of single-layer targets, the form of implantation profiles is well established, depending on the kinetic energy and angle of incident positrons relative to the target surface and the density and average atomic number of the target. For multilayer systems, the difference in density and across the layers makes derivation of an analytical form difficult. To date, the determination of positron stopping profiles in multilayer targets has primarily involved Monte Carlo simulations. We present here an alternative approach that estimates the energy distributiondN/dEof those positrons transmitted past each layer boundary, by fitting the remaining tail of the stopping profile after each layer with a basis set comprised of calculated stopping profiles in the same material they are transmitted through. The stopping profile in the next layer is then found by summing a series of stopping profiles in the new medium in proportion to the determined distributiondN/dE. The results of our model are compared with simulation results in a system of alternating layers of Al and Au and find reasonable agreement in the predicted profile and excellent agreement in the predicted mean implantation depth. Lastly, we derived a simple formula-based approach for the calculation of the mean implantation depth in two-layer systems that provides results in excellent agreement with the full model.

正电子湮没光谱法为缺陷表征提供了一套灵敏的工具。在以光束为基础的单层靶研究中,植入剖面的形式已经确定,这取决于入射正电子相对于靶表面的动能和角度,以及靶的密度和平均原子序数。对于多层系统,由于密度和各层之间的差异,很难推导出分析形式。迄今为止,确定多层目标中的正电子停止轮廓主要涉及蒙特卡罗模拟。我们在此提出了另一种方法,即通过对每层后停止轮廓的剩余尾部进行拟合,并以所计算出的正电子传输所经过的相同材料中的停止轮廓为基础集,从而估算出传输经过每层边界的正电子的能量分布 dN/dE。然后,根据确定的分布 dN/dE,对新介质中的一系列停止轮廓求和,从而得到下一层的停止轮廓。我们将模型的结果与铝层和金层交替系统的模拟结果进行了比较,结果发现两者的预测轮廓基本一致,预测的平均植入深度也非常吻合。最后,我们得出了一种基于公式的简单方法,用于计算双层系统中的平均植入深度,其结果与完整模型非常一致。
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引用次数: 0
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Journal of Physics: Condensed Matter
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